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    • 21. 发明授权
    • Photonic milling using dynamic beam arrays
    • 使用动态光束阵列进行光子研磨
    • US08178818B2
    • 2012-05-15
    • US12235294
    • 2008-09-22
    • Brian W. BairdKelly J. BrulandRobert Hainsey
    • Brian W. BairdKelly J. BrulandRobert Hainsey
    • B23K26/02B23K26/04
    • B23K26/03
    • A laser processing system includes a beam positioning system to align beam delivery coordinates relative to a workpiece. The beam positioning system generates position data corresponding to the alignment. The system also includes a pulsed laser source and a beamlet generation module to receive a laser pulse from the pulsed laser source. The beamlet generation module generates a beamlet array from the laser pulse. The beamlet array includes a plurality of beamlet pulses. The system further includes a beamlet modulator to selectively modulate the amplitude of each beamlet pulse in the beamlet array, and beamlet delivery optics to focus the modulated beamlet array onto one or more targets at locations on the workpiece corresponding to the position data.
    • 激光处理系统包括用于使输送坐标相对于工件对准的光束定位系统。 光束定位系统产生对准的位置数据。 该系统还包括脉冲激光源和子束产生模块,以从脉冲激光源接收激光脉冲。 子波束生成模块从激光脉冲生成小波阵列。 子束阵列包括多个子束脉冲。 该系统还包括一个子束调制器,用于选择性地调制子束阵列中的每个子束脉冲的振幅,以及子束传递光学器件,用于将调制的子束阵列聚焦到与位置数据对应的工件上的位置上的一个或多个目标上。
    • 22. 发明申请
    • PHOTONIC MILLING USING DYNAMIC BEAM ARRAYS
    • 使用动态光束阵列的光电铣削
    • US20090242522A1
    • 2009-10-01
    • US12235294
    • 2008-09-22
    • Brian W. BairdKelly J. BrulandRobert Hainsey
    • Brian W. BairdKelly J. BrulandRobert Hainsey
    • B23K26/00
    • B23K26/03
    • A laser processing system includes a beam positioning system to align beam delivery coordinates relative to a workpiece. The beam positioning system generates position data corresponding to the alignment. The system also includes a pulsed laser source and a beamlet generation module to receive a laser pulse from the pulsed laser source. The beamlet generation module generates a beamlet array from the laser pulse. The beamlet array includes a plurality of beamlet pulses. The system further includes a beamlet modulator to selectively modulate the amplitude of each beamlet pulse in the beamlet array, and beamlet delivery optics to focus the modulated beamlet array onto one or more targets at locations on the workpiece corresponding to the position data.
    • 激光处理系统包括用于使输送坐标相对于工件对准的光束定位系统。 光束定位系统产生对准的位置数据。 该系统还包括脉冲激光源和子束产生模块,以从脉冲激光源接收激光脉冲。 子波束生成模块从激光脉冲生成小波阵列。 子束阵列包括多个子束脉冲。 该系统还包括一个子束调制器,用于选择性地调制子束阵列中的每个子束脉冲的振幅,以及子束传递光学器件,用于将调制的子束阵列聚焦到与位置数据对应的工件上的位置上的一个或多个目标上。
    • 27. 发明授权
    • Ultraviolet laser ablative patterning of microstructures in semiconductors
    • 半导体微结构的紫外激光烧蚀图案化
    • US07157038B2
    • 2007-01-02
    • US10017497
    • 2001-12-14
    • Brian W. BairdMichael J. WolfeRichard S. HarrisKevin P. FaheyLian-Cheng ZouThomas R. McNeil
    • Brian W. BairdMichael J. WolfeRichard S. HarrisKevin P. FaheyLian-Cheng ZouThomas R. McNeil
    • B23K26/38
    • B23K26/0622B23K26/066B23K26/083B23K26/0869B23K26/364B23K26/40B23K2101/40B23K2103/50
    • Patterns with feature sizes of less than 50 microns are rapidly formed directly in semiconductors, particularly silicon, GaAs, indium phosphide, or single crystalline sapphire, using ultraviolet laser ablation. These patterns include very high aspect ratio cylindrical through-hole openings for integrated circuit connections; singulation of processed die contained on semiconductor wafers; and microtab cutting to separate microcircuit workpieces from a parent semiconductor wafer. Laser output pulses (32) from a diode-pumped, Q-switched frequency-tripled Nd:YAG, Nd:YVO4, or Nd:YLF is directed to the workpiece (12) with high speed precision using a compound beam positioner. The optical system produces a Gaussian spot size, or top hat beam profile, of about 10 microns. The pulse energy used for high-speed ablative processing of semiconductors using this focused spot size is greater than 200 μJ per pulse at pulse repetition frequencies greater than 5 kHz and preferably above 15 kHz. The laser pulsewidth measured at the full width half-maximum points is preferably less than 80 ns.
    • 特征尺寸小于50微米的图案使用紫外激光烧蚀直接在半导体,特别是硅,GaAs,磷化铟或单晶蓝宝石中形成。 这些图案包括用于集成电路连接的非常高的纵横比圆柱形通孔开口; 包含在半导体晶片上的加工芯片的分割; 和微型切割以从母半导体晶片分离微电路工件。 来自二极管泵浦Q开关频率三倍的Nd:YAG,Nd:YVO 4或Nd:YLF的激光输出脉冲(32)以高速精度被引导到工件(12) 使用复合光束定位器。 光学系统产生约10微米的高斯光点尺寸或顶帽光束轮廓。 用于使用这种聚焦光点尺寸的半导体高速烧蚀处理的脉冲能量大于5kHz,优选高于15kHz的脉冲重复频率时,每脉冲大于200μJ。 在全宽度半最大点处测量的激光脉冲宽度优选小于80ns。