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21. 发明申请

US20120149175A1 METHOD OF CLEANING SILICON CARBIDE SEMICONDUCTOR 有权
标题翻译：清洁碳化硅半导体的方法
公开(公告)号：US20120149175A1
公开(公告)日：2012-06-14
申请号：US13390869
申请日：2011-02-25
申请人： Keiji Wada , Takeyoshi Masuda , Tomihito Miyazaki , Toru Hiyoshi , Satomi Itoh , Hiromu Shiomi
发明人： Keiji Wada , Takeyoshi Masuda , Tomihito Miyazaki , Toru Hiyoshi , Satomi Itoh , Hiromu Shiomi
IPC分类号： H01L21/04
CPC分类号： H01L21/02052 , H01L21/02057 , H01L21/67051 , H01L29/1608 , H01L29/66068 , H01L29/7802
摘要： A method of cleaning a SiC semiconductor includes the steps of forming an oxide film at the surface of a SiC semiconductor, and removing the oxide film. At the step of forming an oxide film, an oxide film is formed using ozone water having a concentration greater than or equal to 30 ppm. The forming step preferably includes the step of heating at least one of the surface of the SiC semiconductor and the ozone water. Thus, there can be obtained a method of cleaning a SiC semiconductor that can exhibit cleaning effect on the SiC semiconductor.
摘要翻译：清洗SiC半导体的方法包括以下步骤：在SiC半导体的表面形成氧化膜，除去氧化物膜。在形成氧化膜的步骤中，使用浓度大于或等于30ppm的臭氧水形成氧化膜。成形步骤优选包括加热SiC半导体的表面和臭氧水中的至少一个的步骤。因此，可以获得能够对SiC半导体具有清洁效果的SiC半导体的清洗方法。

22. 发明授权

US09184276B2 Method and apparatus for manufacturing silicon carbide semiconductor device 有权
标题翻译：制造碳化硅半导体器件的方法和装置
公开(公告)号：US09184276B2
公开(公告)日：2015-11-10
申请号：US13502976
申请日：2011-02-25
申请人： Takeyoshi Masuda , Keiji Wada , Satomi Itoh , Toru Hiyoshi
发明人： Takeyoshi Masuda , Keiji Wada , Satomi Itoh , Toru Hiyoshi
IPC分类号： H01L21/311 , H01L29/78 , H01L21/04 , H01L29/66 , H01L21/02 , H01L29/16
CPC分类号： H01L29/7802 , H01L21/02057 , H01L21/02236 , H01L21/02301 , H01L21/0445 , H01L21/049 , H01L29/1608 , H01L29/66053 , H01L29/66068
摘要： A method of manufacturing an SiC semiconductor device includes the steps of forming a first oxide film on a first surface of an SiC semiconductor, removing the first oxide film, and forming a second oxide film constituting the SiC semiconductor device on a second surface exposed as a result of removal of the first oxide film in the SiC semiconductor. Between the step of removing the first oxide film and the step of forming a second oxide film, the SiC semiconductor is arranged in an atmosphere cut off from an ambient atmosphere.
摘要翻译：一种制造SiC半导体器件的方法包括以下步骤：在SiC半导体的第一表面上形成第一氧化物膜，去除第一氧化物膜，以及在第二表面上形成构成SiC半导体器件的第二氧化膜，去除SiC半导体中第一氧化膜的结果。在除去第一氧化物膜的步骤和形成第二氧化物膜的步骤之间，将SiC半导体布置在从环境气氛切断的气氛中。

23. 发明授权

US09012335B2 Silicon carbide semiconductor device and method for manufacturing the same 有权
标题翻译：碳化硅半导体器件及其制造方法
公开(公告)号：US09012335B2
公开(公告)日：2015-04-21
申请号：US13520702
申请日：2011-03-04
申请人： Toru Hiyoshi , Takeyoshi Masuda , Keiji Wada
发明人： Toru Hiyoshi , Takeyoshi Masuda , Keiji Wada
IPC分类号： H01L21/31 , H01L21/82 , H01L21/04 , H01L29/51 , H01L29/66 , H01L29/78 , H01L29/94 , H01L29/04 , H01L29/16
CPC分类号： H01L29/7802 , H01L21/049 , H01L21/8213 , H01L29/045 , H01L29/1608 , H01L29/513 , H01L29/518 , H01L29/6606 , H01L29/66068 , H01L29/94
摘要： A silicon carbide semiconductor device having excellent electrical characteristics including channel mobility and a method for manufacturing the same are provided. The method for manufacturing a silicon carbide semiconductor device includes: an epitaxial layer forming step of preparing a semiconductor film of silicon carbide; a gate insulating film forming step of forming an oxide film on a surface of the semiconductor film; a nitrogen annealing step of performing heat treatment on the semiconductor film on which the oxide film is formed, in a nitrogen-containing atmosphere; and a post heat treatment step of performing, after the nitrogen annealing step, post heat treatment on the semiconductor film on which the oxide film is formed, in an atmosphere containing an inert gas. The heat treatment temperature in the post heat treatment step is higher than that in the nitrogen annealing step and lower than a melting point of the oxide film.
摘要翻译：提供一种具有优异的包括沟道迁移率的电特性的碳化硅半导体器件及其制造方法。制造碳化硅半导体器件的方法包括：制备碳化硅半导体膜的外延层形成步骤; 在所述半导体膜的表面上形成氧化膜的栅极绝缘膜形成工序; 在含氮气氛中对形成有氧化膜的半导体膜进行热处理的氮退火工序; 以及后处理工序，在氮退火工序后，在含有惰性气体的气氛中对形成有氧化膜的半导体膜进行后热处理。后热处理工序中的热处理温度高于氮退火工序中的热处理温度，低于氧化膜的熔点。

24. 发明授权

US08803294B2 Semiconductor device and method for manufacturing same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08803294B2
公开(公告)日：2014-08-12
申请号：US13529602
申请日：2012-06-21
申请人： Takeyoshi Masuda , Shin Harada , Keiji Wada , Toru Hiyoshi
发明人： Takeyoshi Masuda , Shin Harada , Keiji Wada , Toru Hiyoshi
IPC分类号： H01L29/24
CPC分类号： H01L29/7802 , H01L21/049 , H01L21/3065 , H01L29/045 , H01L29/0623 , H01L29/0696 , H01L29/1608 , H01L29/66068 , H01L29/7395 , H01L29/7397 , H01L29/7813
摘要： A substrate has a surface made of a semiconductor having a hexagonal single-crystal structure of polytype 4H. The surface of the substrate is constructed by alternately providing a first plane having a plane orientation of (0-33-8), and a second plane connected to the first plane and having a plane orientation different from the plane orientation of the first plane. A gate insulating film is provided on the surface of the substrate. A gate electrode is provided on the gate insulating film.
摘要翻译：衬底具有由具有多晶型4H的六方晶单晶结构的半导体制成的表面。基板的表面通过交替地提供具有（0-33-8）的平面取向的第一平面和连接到第一平面并具有不同于第一平面的平面取向的平面取向的第二平面来构造。栅极绝缘膜设置在基板的表面上。在栅极绝缘膜上设置栅电极。

25. 发明授权

US08686435B2 Silicon carbide semiconductor device 有权
标题翻译：碳化硅半导体器件
公开(公告)号：US08686435B2
公开(公告)日：2014-04-01
申请号：US13434233
申请日：2012-03-29
申请人： Takeyoshi Masuda , Toru Hiyoshi , Keiji Wada
发明人： Takeyoshi Masuda , Toru Hiyoshi , Keiji Wada
IPC分类号： H01L21/336 , H01L29/04 , H01L29/12 , H01L29/78
CPC分类号： H01L21/28 , H01L21/0475 , H01L21/049 , H01L21/306 , H01L21/3065 , H01L29/045 , H01L29/0623 , H01L29/1608 , H01L29/4236 , H01L29/66068 , H01L29/7813
摘要： A silicon carbide layer is epitaxially formed on a main surface of a substrate. The silicon carbide layer is provided with a trench having a side wall inclined relative to the main surface. The side wall has an off angle of not less than 50° and not more than 65° relative to a {0001} plane. A gate insulating film is provided on the side wall of the silicon carbide layer. The silicon carbide layer includes: a body region having a first conductivity type and facing a gate electrode with the gate insulating film being interposed therebetween; and a pair of regions separated from each other by the body region and having a second conductivity type. The body region has an impurity density of 5×1016 cm−3 or greater. This allows for an increased degree of freedom in setting a threshold voltage while suppressing decrease of channel mobility.
摘要翻译：在基板的主表面上外延形成碳化硅层。碳化硅层设置有具有相对于主表面倾斜的侧壁的沟槽。侧壁相对于{0001}面具有不小于50°且不超过65°的偏离角。栅极绝缘膜设置在碳化硅层的侧壁上。碳化硅层包括：具有第一导电类型且面对栅电极的主体区域，栅极绝缘膜介于其间; 以及一对由身体区域彼此隔开并具有第二导电类型的区域。体区的杂质密度为5×1016 cm -3以上。这允许在抑制信道移动性的降低的同时增加设置阈值电压的自由度。

26. 发明授权

US08610132B2 Semiconductor device and method for manufacturing semiconductor device 有权
公开(公告)号：US08610132B2
公开(公告)日：2013-12-17
申请号：US13613801
申请日：2012-09-13
申请人： Takeyoshi Masuda , Keiji Wada , Toru Hiyoshi
发明人： Takeyoshi Masuda , Keiji Wada , Toru Hiyoshi
IPC分类号： H01L29/78
CPC分类号： H01L21/265 , H01L29/0619 , H01L29/0623 , H01L29/0696 , H01L29/1608 , H01L29/42372 , H01L29/4238 , H01L29/66734 , H01L29/7811 , H01L29/7813
摘要： A MOSFET includes a semiconductor substrate having a trench formed in a main surface, a gate oxide film, a gate electrode, and a source interconnection. A semiconductor substrate includes an n-type drift layer and a p-type body layer. The trench is formed to penetrate the body layer and to reach the drift layer. The trench includes an outer peripheral trench arranged to surround an active region when viewed two-dimensionally. On the main surface opposite to the active region when viewed from the outer peripheral trench, a potential fixing region where the body layer is exposed is formed. The source interconnection is arranged to lie over the active region when viewed two-dimensionally. The potential fixing region is electrically connected to the source interconnection.

27. 发明申请

US20120286291A1 SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：硅碳化硅半导体器件及其制造方法
公开(公告)号：US20120286291A1
公开(公告)日：2012-11-15
申请号：US13520702
申请日：2011-03-04
申请人： Toru Hiyoshi , Takeyoshi Masuda , Keiji Wada
发明人： Toru Hiyoshi , Takeyoshi Masuda , Keiji Wada
IPC分类号： H01L29/161 , H01L21/20
CPC分类号： H01L29/7802 , H01L21/049 , H01L21/8213 , H01L29/045 , H01L29/1608 , H01L29/513 , H01L29/518 , H01L29/6606 , H01L29/66068 , H01L29/94
摘要： A silicon carbide semiconductor device having excellent electrical characteristics including channel mobility and a method for manufacturing the same are provided. The method for manufacturing a silicon carbide semiconductor device includes: an epitaxial layer forming step of preparing a semiconductor film of silicon carbide; a gate insulating film forming step of forming an oxide film on a surface of the semiconductor film; a nitrogen annealing step of performing heat treatment on the semiconductor film on which the oxide film is formed, in a nitrogen-containing atmosphere; and a post heat treatment step of performing, after the nitrogen annealing step, post heat treatment on the semiconductor film on which the oxide film is formed, in an atmosphere containing an inert gas. The heat treatment temperature in the post heat treatment step is higher than that in the nitrogen annealing step and lower than a melting point of the oxide film.
摘要翻译：提供一种具有优异的包括沟道迁移率的电特性的碳化硅半导体器件及其制造方法。制造碳化硅半导体器件的方法包括：制备碳化硅半导体膜的外延层形成步骤; 在所述半导体膜的表面上形成氧化膜的栅极绝缘膜形成工序; 在含氮气氛中对形成有氧化膜的半导体膜进行热处理的氮退火工序; 以及后处理工序，在氮退火工序后，在含有惰性气体的气氛中对形成有氧化膜的半导体膜进行后热处理。后热处理工序中的热处理温度高于氮退火工序中的热处理温度，低于氧化膜的熔点。

28. 发明申请

US20120018743A1 SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件
公开(公告)号：US20120018743A1
公开(公告)日：2012-01-26
申请号：US13190001
申请日：2011-07-25
申请人： Toru Hiyoshi , Keiji Wada , Takeyoshi Masuda , Hiromu Shiomi
发明人： Toru Hiyoshi , Keiji Wada , Takeyoshi Masuda , Hiromu Shiomi
IPC分类号： H01L29/772
CPC分类号： H01L29/7802 , H01L21/049 , H01L29/045 , H01L29/1095 , H01L29/1608 , H01L29/66068 , H01L29/7395
摘要： A MOSFET includes a silicon carbide substrate including a main surface having an off angle of not less than 50° and not more than 65° with respect to a {0001} plane, a buffer layer and a drift layer formed on the main surface, a gate oxide film formed on and in contact with the drift layer, and a p type body region of a p conductivity type formed in the drift layer to include a region in contact with the gate oxide film. The p type body region has a p type impurity density of not less than 5×1016 cm−3.
摘要翻译： MOSFET包括碳化硅衬底，其包括相对于{0001}面具有不小于50°且不大于65°的偏离角的主表面，形成在主表面上的缓冲层和漂移层，形成在漂移层上并与漂移层接触的栅氧化膜，以及在漂移层中形成的ap导电型的p型体区域，以包括与栅氧化膜接触的区域。 p型体区的p型杂质密度为5×1016cm-3以上。

29. 发明授权

US08772139B2 Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08772139B2
公开(公告)日：2014-07-08
申请号：US13577836
申请日：2011-12-07
申请人： Toru Hiyoshi , Takeyoshi Masuda
发明人： Toru Hiyoshi , Takeyoshi Masuda
IPC分类号： H01L21/20 , H01L21/36
CPC分类号： H01L29/7802 , H01L21/0475 , H01L29/1608 , H01L29/66068
摘要： A method of manufacturing a MOSFET includes the steps of preparing a silicon carbide substrate, forming an active layer on the silicon carbide substrate, forming a gate oxide film on the active layer, forming a gate electrode on the gate oxide film, forming a source contact electrode on the active layer, and forming a source interconnection on the source contact electrode. The step of forming the source interconnection includes the steps of forming a conductor film on the source contact electrode and processing the conductor film by etching the conductor film with reactive ion etching. Then, the method of manufacturing a MOSFET further includes the step of performing annealing of heating the silicon carbide substrate to a temperature not lower than 50° C. after the step of processing the conductor film.
摘要翻译：制造MOSFET的方法包括以下步骤：制备碳化硅衬底，在碳化硅衬底上形成有源层，在有源层上形成栅极氧化膜，在栅极氧化膜上形成栅电极，形成源极接触电极，并且在源极接触电极上形成源极互连。形成源极互连的步骤包括在源极接触电极上形成导体膜并通过用反应离子蚀刻蚀刻导体膜来处理导体膜的步骤。然后，制造MOSFET的方法还包括在处理导体膜的步骤之后执行将碳化硅衬底加热到不低于50℃的温度的退火的步骤。

30. 发明申请

US20120309174A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20120309174A1
公开(公告)日：2012-12-06
申请号：US13577836
申请日：2011-12-07
申请人： Toru Hiyoshi , Takeyoshi Masuda
发明人： Toru Hiyoshi , Takeyoshi Masuda
IPC分类号： H01L21/20
CPC分类号： H01L29/7802 , H01L21/0475 , H01L29/1608 , H01L29/66068
摘要： A method of manufacturing a MOSFET includes the steps of preparing a silicon carbide substrate, forming an active layer on the silicon carbide substrate, forming a gate oxide film on the active layer, forming a gate electrode on the gate oxide film, forming a source contact electrode on the active layer, and forming a source interconnection on the source contact electrode. The step of forming the source interconnection includes the steps of forming a conductor film on the source contact electrode and processing the conductor film by etching the conductor film with reactive ion etching. Then, the method of manufacturing a MOSFET further includes the step of performing annealing of heating the silicon carbide substrate to a temperature not lower than 50° C. after the step of processing the conductor film.
摘要翻译：制造MOSFET的方法包括以下步骤：制备碳化硅衬底，在碳化硅衬底上形成有源层，在有源层上形成栅极氧化膜，在栅极氧化膜上形成栅电极，形成源极接触电极，并且在源极接触电极上形成源极互连。形成源极互连的步骤包括在源极接触电极上形成导体膜并通过用反应离子蚀刻蚀刻导体膜来处理导体膜的步骤。然后，制造MOSFET的方法还包括在处理导体膜的步骤之后执行将碳化硅衬底加热到不低于50℃的温度的退火的步骤。

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