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21. 发明申请

US20080238550A1 POWER AMPLIFIER AND TRANSMISSION AND RECEPTION SYSTEM 有权
标题翻译：功率放大器和传输和接收系统
公开(公告)号：US20080238550A1
公开(公告)日：2008-10-02
申请号：US11857737
申请日：2007-09-19
申请人： Tadahiro SASAKI , Kazuhide Abe , Kazuhiko Itaya , Hideyuki Funaki
发明人： Tadahiro SASAKI , Kazuhide Abe , Kazuhiko Itaya , Hideyuki Funaki
IPC分类号： H03F3/16 , H03F3/68
CPC分类号： H03F3/604 , H01L21/823425 , H01L27/088 , H03F1/3205 , H03F3/16 , H03F3/607 , H03F3/72 , H03F2200/108 , H03F2200/451 , H03F2200/468 , H03F2200/543 , H03F2200/78 , H03F2203/7236
摘要： A power amplifier includes: a first multi-finger FET formed on a semiconductor substrate; a second multi-finger FET formed on the semiconductor substrate; a first temperature detector which detects a channel temperature of the first FET; a second temperature detector which detects a channel temperature of the second FET; a third temperature detector which detects a temperature of the semiconductor substrate; a first detection circuit detecting a difference between an output of the first temperature detector and an output of the third temperature detector and converting the difference to thermoelectromotive force; a second detection circuit detecting a difference between an output of the second temperature detector and the output of the third temperature detector and converting the difference to thermoelectromotive force; and a comparator comparing outputs of the first and second detection circuits with each other to turn on one of the first and second switches and turn off the other.
摘要翻译：功率放大器包括：形成在半导体衬底上的第一多指FET; 形成在半导体衬底上的第二多指FET; 第一温度检测器，其检测第一FET的通道温度; 第二温度检测器，其检测第二FET的通道温度; 第三温度检测器，其检测半导体衬底的温度; 第一检测电路，检测第一温度检测器的输出和第三温度检测器的输出之间的差异，并将差值转换为热电动势; 第二检测电路，检测第二温度检测器的输出与第三温度检测器的输出之间的差异，并将差值转换为热电动势; 以及比较器，将第一和第二检测电路的输出彼此进行比较，以打开第一和第二开关中的一个并且关闭另一个。

22. 发明申请

US20080012638A1 POWER SUPPLY APPARATUS, AMPLIFIER APPARATUS, RADIO APPARATUS AND REPRODUCING APPARATUS 失效
标题翻译：电源装置，放大器装置，无线电装置和再生装置
公开(公告)号：US20080012638A1
公开(公告)日：2008-01-17
申请号：US11678398
申请日：2007-02-23
申请人： Hideyuki Funaki , Kazuhiko Itaya
发明人： Hideyuki Funaki , Kazuhiko Itaya
IPC分类号： H03G3/20
CPC分类号： H03G3/007 , H03F1/0205 , H03F1/0227 , H03F1/32 , H03F3/24 , H03F2200/321 , H03F2200/336 , H03F2200/351 , H03F2200/504 , H03F2200/78 , H03G3/004
摘要： A power supply apparatus which supplies power to an amplifier, includes: a regulator stabilizing a voltage of the power supplied to the amplifier; and a stabilizing controller obtaining an amplitude level of an input signal inputted to the amplifier and controlling a stability of the voltage by the regulator based on the amplitude level.
摘要翻译：向放大器供电的电源装置包括：稳压供给放大器的电力的电压的稳压器; 以及稳定控制器，其获得输入到放大器的输入信号的幅度电平，并且基于振幅电平来控制调节器的电压的稳定性。

23. 发明授权

US07875481B2 Semiconductor apparatus and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07875481B2
公开(公告)日：2011-01-25
申请号：US12200177
申请日：2008-08-28
申请人： Yutaka Onozuka , Hiroshi Yamada , Hideyuki Funaki , Kazuhiko Itaya
发明人： Yutaka Onozuka , Hiroshi Yamada , Hideyuki Funaki , Kazuhiko Itaya
IPC分类号： H01L21/00
CPC分类号： B81C1/0023 , B81C1/00246 , B81C2201/019 , B81C2203/0771 , H01L24/19 , H01L24/24 , H01L24/96 , H01L2224/04105 , H01L2224/12105 , H01L2224/24137 , H01L2924/01005 , H01L2924/01006 , H01L2924/01011 , H01L2924/01013 , H01L2924/01015 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01041 , H01L2924/01042 , H01L2924/01047 , H01L2924/01057 , H01L2924/01072 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/10253 , H01L2924/10329 , H01L2924/1461 , H01L2924/18162 , H01L2924/19041 , H01L2924/19042 , H01L2924/351 , H01L2924/3511 , H01L2924/00
摘要： It is made possible to provide a highly integrated, thin apparatus can be obtained, even if the apparatus contains MEMS devices and semiconductor devices. A semiconductor apparatus includes: a first chip comprising a MEMS device formed therein; a second chip comprising a semiconductor device formed therein; and an adhesive layer bonding a side face of the first chip to a side face of the second chip, and having a lower Young's modulus than the material of the first and second chips.
摘要翻译：即使该装置包含MEMS器件和半导体器件，也可以获得高度集成的薄型器件。一种半导体装置包括：第一芯片，其包括形成在其中的MEMS器件; 包括其中形成的半导体器件的第二芯片; 以及将第一芯片的侧面接合到第二芯片的侧面并且具有比第一芯片和第二芯片的材料更低的杨氏模量的粘合剂层。

24. 发明申请

US20070273018A1 SEMICONDUCTOR APPARATUS AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：半导体装置及其制造方法
公开(公告)号：US20070273018A1
公开(公告)日：2007-11-29
申请号：US11678996
申请日：2007-02-26
申请人： Yutaka Onozuka , Hiroshi Yamada , Hideyuki Funaki , Kazuhiko Itaya
发明人： Yutaka Onozuka , Hiroshi Yamada , Hideyuki Funaki , Kazuhiko Itaya
IPC分类号： H01L23/48 , H01L21/00
CPC分类号： B81C1/0023 , B81C1/00246 , B81C2201/019 , B81C2203/0771 , H01L24/19 , H01L24/24 , H01L24/96 , H01L2224/04105 , H01L2224/12105 , H01L2224/24137 , H01L2924/01005 , H01L2924/01006 , H01L2924/01011 , H01L2924/01013 , H01L2924/01015 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01041 , H01L2924/01042 , H01L2924/01047 , H01L2924/01057 , H01L2924/01072 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/10253 , H01L2924/10329 , H01L2924/1461 , H01L2924/18162 , H01L2924/19041 , H01L2924/19042 , H01L2924/351 , H01L2924/3511 , H01L2924/00
摘要： It is made possible to provide a highly integrated, thin apparatus can be obtained, even if the apparatus contains MEMS devices and semiconductor devices. A semiconductor apparatus includes: a first chip comprising a MEMS device formed therein; a second chip comprising a semiconductor device formed therein; and an adhesive layer bonding a side face of the first chip to a side face of the second chip, and having a lower Young's modulus than the material of the first and second chips.
摘要翻译：即使该装置包含MEMS器件和半导体器件，也可以获得高度集成的薄型器件。一种半导体装置包括：第一芯片，其包括形成在其中的MEMS器件; 包括其中形成的半导体器件的第二芯片; 以及将第一芯片的侧面接合到第二芯片的侧面并且具有比第一芯片和第二芯片的材料更低的杨氏模量的粘合剂层。

25. 发明授权

US08008760B2 Integrated semiconductor device 有权
标题翻译：集成半导体器件
公开(公告)号：US08008760B2
公开(公告)日：2011-08-30
申请号：US12370927
申请日：2009-02-13
申请人： Hiroshi Yamada , Kazuhiko Itaya , Yutaka Onozuka , Hideyuki Funaki
发明人： Hiroshi Yamada , Kazuhiko Itaya , Yutaka Onozuka , Hideyuki Funaki
IPC分类号： H01L23/02
CPC分类号： H01L25/0655 , B81B7/0054 , B81C1/00238 , H01L21/568 , H01L21/6835 , H01L23/5389 , H01L24/19 , H01L24/82 , H01L25/16 , H01L2224/04105 , H01L2224/12105 , H01L2224/24137 , H01L2224/92144 , H01L2924/01006 , H01L2924/01013 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/10329 , H01L2924/12044 , H01L2924/14 , H01L2924/1461 , H01L2924/15311 , H01L2924/15331 , H01L2924/30105 , H01L2924/3511 , H01L2924/00
摘要： An integrated semiconductor device includes a plurality of semiconductor elements having different integrated element circuits or different sizes; an insulating material arranged between the semiconductor elements; an organic insulating film arranged entirely on the semiconductor elements and the insulating material; a fine thin-layer wiring that arranged on the organic insulating film and connects the semiconductor elements; a first input/output electrode arranged on an area of the insulating material; and a first bump electrode formed on the first input/output electrode.
摘要翻译：集成半导体器件包括具有不同集成元件电路或不同尺寸的多个半导体元件; 布置在所述半导体元件之间的绝缘材料; 完全设置在半导体元件和绝缘材料上的有机绝缘膜; 布置在有机绝缘膜上并连接半导体元件的精细薄层布线; 布置在所述绝缘材料的区域上的第一输入/输出电极; 以及形成在所述第一输入/输出电极上的第一凸块电极。

26. 发明授权

US07619470B2 Power amplifier 失效
标题翻译：功率放大器
公开(公告)号：US07619470B2
公开(公告)日：2009-11-17
申请号：US11687770
申请日：2007-03-19
申请人： Kazuhide Abe , Tadahiro Sasaki , Kazuhiko Itaya , Hideyuki Funaki
发明人： Kazuhide Abe , Tadahiro Sasaki , Kazuhiko Itaya , Hideyuki Funaki
IPC分类号： H03F3/217
CPC分类号： H03F3/2176 , H03F1/02 , H03F3/245 , H03F2200/366 , H03F2200/391 , H03F2203/21178 , H03G1/0088
摘要： A power amplifier includes: a plurality of field effect transistors connected in parallel and each having a first and second ends, the first end being connected to ground; an amplifying unit which includes at least one of an inductor, a capacitor and a band pass filter and has a third and fourth ends, the third end being connected to the second ends of the field effect transistors, and the fourth end outputting an amplified output signal; and an amplitude controller which sends control signals respectively to gates of the field effect transistors to turn on or off the field effect transistors based on an address signal for performing selection on the field effect transistors and a clock signal. Channel widths of the field effect transistors are different from each other.
摘要翻译：功率放大器包括：多个并联连接的场效应晶体管，每个具有第一和第二端，所述第一端连接到地; 放大单元，其包括电感器，电容器和带通滤波器中的至少一个，并具有第三和第四端，第三端连接到场效应晶体管的第二端，第四端输出放大的输出信号; 以及幅度控制器，其基于用于对场效应晶体管进行选择的地址信号和时钟信号，分别向场效应晶体管的栅极发送控制信号以导通或关闭场效应晶体管。场效应晶体管的沟道宽度彼此不同。

27. 发明授权

US07583149B2 Power supply apparatus, amplifier apparatus, radio apparatus and reproducing apparatus 失效
标题翻译：电源装置，放大器装置，无线电装置和再现装置
公开(公告)号：US07583149B2
公开(公告)日：2009-09-01
申请号：US11678398
申请日：2007-02-23
申请人： Hideyuki Funaki , Kazuhiko Itaya
发明人： Hideyuki Funaki , Kazuhiko Itaya
IPC分类号： H03F3/04 , H03G3/20
CPC分类号： H03G3/007 , H03F1/0205 , H03F1/0227 , H03F1/32 , H03F3/24 , H03F2200/321 , H03F2200/336 , H03F2200/351 , H03F2200/504 , H03F2200/78 , H03G3/004
摘要： A power supply apparatus which supplies power to an amplifier, includes: a regulator stabilizing a voltage of the power supplied to the amplifier; and a stabilizing controller obtaining an amplitude level of an input signal inputted to the amplifier and controlling a stability of the voltage by the regulator based on the amplitude level.
摘要翻译：向放大器供电的电源装置包括：稳压供给放大器的电力的电压的稳压器; 以及稳定控制器，其获得输入到放大器的输入信号的幅度电平，并且基于振幅电平来控制调节器的电压的稳定性。

28. 发明授权

US07508268B2 Power amplifier and transmission and reception system 有权
标题翻译：功率放大器和发射和接收系统
公开(公告)号：US07508268B2
公开(公告)日：2009-03-24
申请号：US11857737
申请日：2007-09-19
申请人： Tadahiro Sasaki , Kazuhide Abe , Kazuhiko Itaya , Hideyuki Funaki
发明人： Tadahiro Sasaki , Kazuhide Abe , Kazuhiko Itaya , Hideyuki Funaki
IPC分类号： H03F3/68
CPC分类号： H03F3/604 , H01L21/823425 , H01L27/088 , H03F1/3205 , H03F3/16 , H03F3/607 , H03F3/72 , H03F2200/108 , H03F2200/451 , H03F2200/468 , H03F2200/543 , H03F2200/78 , H03F2203/7236
摘要： A power amplifier includes: a first multi-finger FET formed on a semiconductor substrate; a second multi-finger FET formed on the semiconductor substrate; a first temperature detector which detects a channel temperature of the first FET; a second temperature detector which detects a channel temperature of the second FET; a third temperature detector which detects a temperature of the semiconductor substrate; a first detection circuit detecting a difference between an output of the first temperature detector and an output of the third temperature detector and converting the difference to thermoelectromotive force; a second detection circuit detecting a difference between an output of the second temperature detector and the output of the third temperature detector and converting the difference to thermoelectromotive force; and a comparator comparing outputs of the first and second detection circuits with each other to turn on one of the first and second switches and turn off the other.
摘要翻译：功率放大器包括：形成在半导体衬底上的第一多指FET; 形成在半导体衬底上的第二多指FET; 第一温度检测器，其检测第一FET的通道温度; 第二温度检测器，其检测第二FET的通道温度; 第三温度检测器，其检测半导体衬底的温度; 第一检测电路，检测第一温度检测器的输出和第三温度检测器的输出之间的差异，并将差值转换为热电动势; 第二检测电路，检测第二温度检测器的输出与第三温度检测器的输出之间的差异，并将差值转换为热电动势; 以及比较器，将第一和第二检测电路的输出彼此进行比较，以打开第一和第二开关中的一个并且关闭另一个。

29. 发明申请

US20080318356A1 SEMICONDUCTOR APPARATUS AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20080318356A1
公开(公告)日：2008-12-25
申请号：US12200177
申请日：2008-08-28
申请人： Yutaka Onozuka , Hiroshi Yamada , Hideyuki Funaki , Kazuhiko Itaya
发明人： Yutaka Onozuka , Hiroshi Yamada , Hideyuki Funaki , Kazuhiko Itaya
IPC分类号： H01L21/58
CPC分类号： B81C1/0023 , B81C1/00246 , B81C2201/019 , B81C2203/0771 , H01L24/19 , H01L24/24 , H01L24/96 , H01L2224/04105 , H01L2224/12105 , H01L2224/24137 , H01L2924/01005 , H01L2924/01006 , H01L2924/01011 , H01L2924/01013 , H01L2924/01015 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01041 , H01L2924/01042 , H01L2924/01047 , H01L2924/01057 , H01L2924/01072 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/10253 , H01L2924/10329 , H01L2924/1461 , H01L2924/18162 , H01L2924/19041 , H01L2924/19042 , H01L2924/351 , H01L2924/3511 , H01L2924/00
摘要： It is made possible to provide a highly integrated, thin apparatus can be obtained, even if the apparatus contains MEMS devices and semiconductor devices. A semiconductor apparatus includes: a first chip comprising a MEMS device formed therein; a second chip comprising a semiconductor device formed therein; and an adhesive layer bonding a side face of the first chip to a side face of the second chip, and having a lower Young's modulus than the material of the first and second chips.
摘要翻译：即使该装置包含MEMS器件和半导体器件，也可以获得高集成度的薄的器件。一种半导体装置包括：第一芯片，其包括形成在其中的MEMS器件; 包括其中形成的半导体器件的第二芯片; 以及将第一芯片的侧面接合到第二芯片的侧面并且具有比第一芯片和第二芯片的材料更低的杨氏模量的粘合剂层。

30. 发明申请

US20080258815A1 HIGH FREQUENCY POWER AMPLIFIER AND WIRELESS PORTABLE TERMINAL USING THE SAME 审中-公开
标题翻译：高频功率放大器和无线便携式终端使用相同
公开(公告)号：US20080258815A1
公开(公告)日：2008-10-23
申请号：US11871451
申请日：2007-10-12
申请人： Kazuhide ABE , Tadahiro Sasaki , Kazuhiko Itaya , Hideyuki Funaki
发明人： Kazuhide ABE , Tadahiro Sasaki , Kazuhiko Itaya , Hideyuki Funaki
IPC分类号： H03F3/16
CPC分类号： H03F3/245 , H01L23/66 , H01L27/0207 , H01L2223/6644 , H01L2924/0002 , H01L2924/3011 , H03F3/195 , H03F3/211 , H03F3/601 , H03F2200/366 , H03F2200/451 , H03F2203/21178 , H01L2924/00
摘要： An object is to provide a high frequency power amplifier in which lowering of output power during operation is prevented, influence of thermal noise is suppressed, high frequency operation is stable, and long-term reliability is ensured. The high frequency power amplifier includes a plurality of transistors having gate electrodes, source regions and drain regions, the gate electrodes, source regions and drain regions being respectively connected in common, and a plurality of acoustic reflection layers being buried in portions of the semiconductor substrate, the portions being located between adjacent transistors, the acoustic reflection layers being disposed in a direction which is oblique to a length direction of the gate electrode.
摘要翻译：本发明的目的是提供一种高频功率放大器，其中防止了操作期间输出功率的降低，热噪声的影响被抑制，高频操作稳定，并且确保了长期的可靠性。高频功率放大器包括具有栅电极，源极区和漏极区的多个晶体管，栅电极，源极区和漏区共同分别连接，并且多个声反射层被埋在半导体衬底的一部分中，所述部分位于相邻的晶体管之间，声反射层沿与栅电极的长度方向倾斜的方向设置。

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