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21. 发明授权

US5674327A Alloy ingot for permanent magnet, anisotropic powders for permanent magnet, method for producing same and permanent magnet 失效
公开(公告)号：US5674327A
公开(公告)日：1997-10-07
申请号：US636772
申请日：1996-04-19
申请人： Kazuhiko Yamamoto , Yuichi Miyake , Chikara Okada
发明人： Kazuhiko Yamamoto , Yuichi Miyake , Chikara Okada
IPC分类号： B22F9/02 , C22C1/03 , C22C1/04 , H01F1/055 , H01F1/057 , H01F1/058 , H01F1/059
CPC分类号： H01F1/055 , B22F9/023 , C22C1/03 , C22C1/0441 , H01F1/057 , H01F1/0571 , H01F1/0573 , H01F1/058 , H01F1/059
摘要： An alloy ingot for permanent magnet consists essentially of rare earth metal and iron and optionally boron. The two-component alloy ingot contains 90 vol % or more of crystals having a crystal grain size along a short axis of 0.1 to 100 .mu.m and that along a long axis of 0.1 to 100 .mu.m. The three-component alloy ingot contains 90 vol % or more of crystals having a crystal grain size along a short axis of 0.1 to 50 .mu.m and that along a long axis of 0.1 to 100 .mu.m. The alloy ingot is produced by solidifying the molten alloy uniformly at a cooling rate of 10.degree. to 1000.degree. C./sec. at a sub-cooling degree of 10.degree. to 500.degree. C. A permanent magnet and anisotropic powders are produced from the alloy ingot.

22. 发明授权

US5630885A Alloy ingot for permanent magnet, anisotropic powders for permanent magnet, method for producing same and permanent magnet 失效
标题翻译：永磁体用合金锭，永久磁铁用各向异性粉末，其制造方法及永久磁铁
公开(公告)号：US5630885A
公开(公告)日：1997-05-20
申请号：US626157
申请日：1996-04-04
申请人： Kazuhiko Yamamoto , Yuichi Miyake , Chikara Okada
发明人： Kazuhiko Yamamoto , Yuichi Miyake , Chikara Okada
IPC分类号： B22F9/02 , C22C1/03 , C22C1/04 , H01F1/055 , H01F1/057 , H01F1/058 , H01F1/059 , H01F1/00
CPC分类号： H01F1/055 , B22F9/023 , C22C1/03 , C22C1/0441 , H01F1/057 , H01F1/0571 , H01F1/0573 , H01F1/058 , H01F1/059
摘要： An alloy ingot for permanent magnet consists essentially of rare earth metal and iron and optionally boron. The two-component alloy ingot contains 90 vol % or more of crystals having a crystal grain size along a short axis of 0.1 to 100 .mu.m and that along a long axis of 0.1 to 100 .mu.m. The three-component alloy ingot contains 90 vol % or more of crystals having a crystal grain size along a short axis of 0.1 to 50 .mu.m and that along a long axis of 0.1 to 100 .mu.m. The alloy ingot is produced by solidifying the molten alloy uniformly at a cooling rate of 10.degree. to 1000.degree. C./sec. at a sub-cooling degree of 10.degree. to 500.degree. C. A permanent magnet and anisotropic powders are produced from the alloy ingot.
摘要翻译：用于永磁体的合金锭主要由稀土金属和铁以及任选的硼组成。双组分合金锭含有90体积％以上的具有短轴的晶粒尺寸为0.1〜100微米，长轴为0.1〜100μm的晶体。三组分合金锭含有90体积％以上的具有短轴的晶粒尺寸为0.1〜50μm，长轴为0.1〜100μm的晶体。合金锭通过以10℃〜1000℃/秒的冷却速度均匀地熔融熔融合金来制造。在10〜500℃的副冷却度下，由合金锭生产永磁体和各向异性粉末。

23. 发明授权

US5085895A Polyolefin resin composition 失效
公开(公告)号：US5085895A
公开(公告)日：1992-02-04
申请号：US555670
申请日：1990-07-18
申请人： Tadashi Asanuma , Kazuhiko Yamamoto , Junko Ohnaka , Yoshiko Tokura
发明人： Tadashi Asanuma , Kazuhiko Yamamoto , Junko Ohnaka , Yoshiko Tokura
IPC分类号： C08F210/00 , C08F210/02 , C08F210/06 , C08F230/08 , C08F297/06 , C09D143/04 , C09D153/00 , C09J143/04 , C09J153/00
CPC分类号： C09J153/00 , C08F210/00 , C08F230/08 , C08F297/06 , C09D143/04 , C09D153/00 , C09J143/04 , C08F210/02 , C08F210/06 , Y10T428/31663
摘要： The present invention relates to the use of a polyolefin resin composition comprising a random copolymer of an alkenylsilane compound and an .alpha.-olefin compound as a material for adhesion or a coating material.

24. 发明授权

US4485411A System for deleting picture information 失效
标题翻译：用于删除图片信息的系统
公开(公告)号：US4485411A
公开(公告)日：1984-11-27
申请号：US316481
申请日：1981-10-29
申请人： Kazuhiko Yamamoto
发明人： Kazuhiko Yamamoto
IPC分类号： H04N1/387 , G06F17/30 , G06T11/60 , G11B5/008 , G11B27/024 , G11B27/028 , G11B27/28 , H04N5/91 , H04N1/22
CPC分类号： G11B27/28 , G11B27/028 , G11B5/00817 , G11B2220/90 , G11B27/024
摘要： A system for deleting picture information is provided for a picture information file. The system has a keyboard, a 2-dimension scanning device, a magnetic tape device, a display device and a control device including a microprocessor. The deletion of the picture information recorded in the magnetic tape device is performed by recording the delete mark in a delete mark recording area of the retrieval title corresponding to the picture information to be deleted.
摘要翻译：为图像信息文件提供删除图像信息的系统。该系统具有键盘，二维扫描装置，磁带装置，显示装置和包括微处理器的控制装置。记录在磁带装置中的图像信息的删除通过将删除标记记录在与要删除的图像信息相对应的检索标题的删除标记记录区中来执行。

25. 发明授权

US4445195A Recording system of variable length picture information 失效
标题翻译：可变长度图像信息记录系统
公开(公告)号：US4445195A
公开(公告)日：1984-04-24
申请号：US316484
申请日：1981-10-29
申请人： Kazuhiko Yamamoto
发明人： Kazuhiko Yamamoto
IPC分类号： H04N5/93 , G06F17/30 , G06T1/00 , G11B5/008 , G11B27/036 , H04N1/21 , G06F7/00 , H04N1/40
CPC分类号： G11B27/036 , G11B5/00817 , Y10S707/99945 , Y10S707/99957
摘要： A recording system is provided for a picture information file device having a keyboard, a 2-dimension scanning device, a magnetic tape device, a display device, and a microprocessor. When registering new picture information, a retrieval title to which a delete mark is attached is searched. The length of the picture information recorded at the position represented by this retrieval title is compared with the length of the new picture information to be recorded. If the new picture information to be recorded is shorter, the new picture information is recorded in the deleted picture information area. If the new picture information is longer, another retrieval title with a delete mark attached thereto is searched and the same comparison is made. If all the retrieval titles are searched and there is not retrieval title with a delete mark, or if the new picture information is longer than the deleted picture information of the respective retriveal titles with the delete mark, the new picture information is recorded in the picture information recording area next to the area which records the final picture information.
摘要翻译：为具有键盘，二维扫描装置，磁带装置，显示装置和微处理器的图像信息文件装置提供记录系统。当注册新的图像信息时，搜索附加有删除标记的检索标题。将记录在由该检索标题表示的位置处的图像信息的长度与要记录的新图像信息的长度进行比较。如果要记录的新图像信息较短，则新的图像信息被记录在删除的图像信息区域中。如果新的图像信息较长，则搜索附有删除标记的另一个检索标题并进行相同的比较。如果搜索所有检索标题，并且没有具有删除标记的检索标题，或者如果新图像信息比具有删除标记的各个再现标题的删除图像信息长，则新图像信息被记录在图像中记录最终图像信息的区域旁边的信息记录区域。

26. 发明授权

US4417282A Document information filing system 失效
标题翻译：文件资料档案系统
公开(公告)号：US4417282A
公开(公告)日：1983-11-22
申请号：US318192
申请日：1981-11-04
申请人： Kazuhiko Yamamoto
发明人： Kazuhiko Yamamoto
IPC分类号： G06F7/12 , G06F17/30 , H04N1/00 , H04N1/21 , H04N5/78
CPC分类号： H04N1/32112 , H04N1/00795 , H04N1/2175 , H04N1/2195 , H04N2201/0081 , H04N2201/0082 , H04N2201/214 , H04N2201/3226 , H04N2201/3243 , H04N2201/3277
摘要： A central processing unit determines the size of a copying sheet to be used from a document size code read out from an index information recording track of a magnetic tape by a video tape recorder of a document information filing system, and produces copying sheet size data. A copying sheet selecting device is driven according to the copying sheet size data to supply a copying sheet of the size corresponding to the copying sheet size data to a copying device. The copying device reproduces document information corresponding to the index information on the selected copying sheet supplied to it.
摘要翻译：中央处理单元通过文件信息归档系统的录像机从从磁带的索引信息记录轨道读出的文档大小码确定要使用的复印纸的尺寸，并且产生复印纸尺寸数据。根据复印纸尺寸数据驱动复印纸选择装置，以向复印装置提供与复印纸尺寸数据相对应的尺寸的复印纸。复制装置再现与提供给所选择的复印纸上的索引信息相对应的文档信息。

27. 发明授权

US4314595A Method of forming nondefective zone in silicon single crystal wafer by two stage-heat treatment 失效
标题翻译：通过两级热处理在硅单晶晶片中形成无损区的方法
公开(公告)号：US4314595A
公开(公告)日：1982-02-09
申请号：US110456
申请日：1980-01-08
申请人： Kazuhiko Yamamoto , Yoshiaki Matsushita , Masaru Kanamori , Kazutoshi Nagasawa , Naotsugu Yoshihiro , Seigo Kishino
发明人： Kazuhiko Yamamoto , Yoshiaki Matsushita , Masaru Kanamori , Kazutoshi Nagasawa , Naotsugu Yoshihiro , Seigo Kishino
IPC分类号： H01L21/66 , H01L21/322 , H01L7/52
CPC分类号： H01L21/3225 , Y10S148/024
摘要： A silicon single crystal wafer is subjected to two-stage heat treatment. In the first-stage it is heated at a temperature within the range of between 500.degree. C. and 1,000.degree. C. Subsequently the thus heated wafer is heated at a temperature higher than that at the first stage. Thus, a nondefective zone is formed in the surface region of the wafer, and the interior zone of the wafer becomes rich in micro defects capable of gettering impurities such as heavy metals.
摘要翻译：将硅单晶晶片进行两级热处理。在第一阶段中，在500℃至1000℃的温度范围内加热。随后将这样加热的晶片在高于第一阶段的温度下加热。因此，在晶片的表面区域形成非缺陷区，并且晶片的内部区域变得富含能够吸收诸如重金属的杂质的微缺陷。

28. 发明授权

US08866119B2 Memory device and method for manufacturing same 有权
标题翻译：存储器件及其制造方法
公开(公告)号：US08866119B2
公开(公告)日：2014-10-21
申请号：US13051264
申请日：2011-03-18
申请人： Kazuhiko Yamamoto , Kenji Aoyama
发明人： Kazuhiko Yamamoto , Kenji Aoyama
IPC分类号： H01L29/04 , H01L47/00 , H01L29/06 , H01L27/24 , H01L45/00 , G11C13/00 , G11C13/02
CPC分类号： H01L45/04 , G11C13/0014 , G11C13/025 , G11C2213/16 , G11C2213/71 , G11C2213/72 , H01L27/2409 , H01L27/2463 , H01L27/2481 , H01L45/1233 , H01L45/145 , H01L45/149 , H01L45/1675
摘要： According to one embodiment, a memory device includes a selection element layer, a nanomaterial aggregate layer, and a fine particle. The nanomaterial aggregate layer is stacked on the selection element layer. The nanomaterial aggregate layer has a plurality of micro conductive bodies aggregated with an interposed gap. The fine particle has at least a surface made of silicon oxynitride. The fine particle is dispersed between the micro conductive bodies in one portion of the nanomaterial aggregate layer piercing the nanomaterial aggregate layer in a thickness direction.
摘要翻译：根据一个实施例，存储器件包括选择元件层，纳米材料聚集体层和细颗粒。纳米材料聚集层层叠在选择元件层上。纳米材料聚集体层具有多个与插入的间隙聚集的微导电体。细颗粒至少具有由氮氧化硅制成的表面。微细颗粒分散在纳米材料聚集体层的一部分中的微导电体之间，该纳米材料聚集体层在厚度方向上穿透纳米材料聚集体层。

29. 发明授权

US08729517B2 Nonvolatile semiconductor memory device and method for manufacturing nonvolatile semiconductor memory device 有权
标题翻译：用于制造非易失性半导体存储器件的非易失性半导体存储器件和方法
公开(公告)号：US08729517B2
公开(公告)日：2014-05-20
申请号：US13044951
申请日：2011-03-10
申请人： Takuya Konno , Kazuhiko Yamamoto
发明人： Takuya Konno , Kazuhiko Yamamoto
IPC分类号： H01L45/00
CPC分类号： H01L45/141 , H01L27/2409 , H01L27/2463 , H01L45/148 , H01L45/1608
摘要： According to one embodiment, a nonvolatile semiconductor memory device includes a first interconnect, a second interconnect and a resistance change layer. The first interconnect extends in a first direction on a major surface of a substrate. The second interconnect extends in a second direction non-parallel to the first direction. The resistance change layer includes a conductive nanomaterial, the resistance change layer located between the first interconnect and the second interconnect and being capable of reversibly changing between a first resistance state and a second resistance state by a voltage applied or a current supplied through the first interconnect and the second interconnect. The resistance change layer has a density varied along a third direction generally perpendicular to the first direction and the second direction.
摘要翻译：根据一个实施例，非易失性半导体存储器件包括第一互连，第二互连和电阻变化层。第一互连在衬底的主表面上沿第一方向延伸。第二互连在不平行于第一方向的第二方向上延伸。电阻变化层包括导电纳米材料，电阻变化层位于第一互连和第二互连之间，并且能够通过施加的电压或通过第一互连提供的电流在第一电阻状态和第二电阻状态之间可逆地改变和第二互连。电阻变化层的密度沿大致垂直于第一方向和第二方向的第三方向变化。

30. 发明申请

US20120205609A1 MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：存储器件及其制造方法
公开(公告)号：US20120205609A1
公开(公告)日：2012-08-16
申请号：US13235842
申请日：2011-09-19
申请人： Shigeto OSHINO , Kenji Aoyama , Kazuhiko Yamamoto , Shinichi Nakao , Kei Watanabe , Satoshi Ishikawa
发明人： Shigeto OSHINO , Kenji Aoyama , Kazuhiko Yamamoto , Shinichi Nakao , Kei Watanabe , Satoshi Ishikawa
IPC分类号： H01L45/00 , H01L21/8239 , B82Y99/00
CPC分类号： H01L27/101 , B82Y10/00 , B82Y30/00 , H01L27/2481 , H01L45/149 , H01L45/1608
摘要： According to one embodiment, a memory device includes a lower electrode layer, a nanomaterial assembly layer, a protective layer and an upper electrode layer. The nanomaterial assembly layer is provided on the lower electrode layer and includes a plurality of fine conductors assembled via a gap. The protective layer is provided on the nanomaterial assembly layer, is conductive, is in contact with the fine conductors, and includes an opening. The upper electrode layer is provided on the protective layer and is in contact with the protective layer.
摘要翻译：根据一个实施例，存储器件包括下电极层，纳米材料组合层，保护层和上电极层。纳米材料组装层设置在下电极层上，并且包括通过间隙组装的多个细导体。保护层设置在纳米材料组装层上，导电，与细导体接触，并包括开口。上电极层设置在保护层上并与保护层接触。

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