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21. 发明申请

US20090219653A1 HEAD SLIDER EQUIPPED WITH PIEZOELECTRIC ELEMENT 审中-公开
标题翻译：头部滑块配有压电元件
公开(公告)号：US20090219653A1
公开(公告)日：2009-09-03
申请号：US12395161
申请日：2009-02-27
申请人： Tsuyoshi Aoki , Kazuaki Kurihara , Shigeyoshi Umemiya
发明人： Tsuyoshi Aoki , Kazuaki Kurihara , Shigeyoshi Umemiya
IPC分类号： G11B5/56 , B05D5/12
CPC分类号： G11B5/5552 , G11B5/56
摘要： A head slider includes a slider substrate, an actuator provided in an end portion of the slider substrate and equipped with a piezoelectric element, and a magnetic head disposed on a side opposite to the slider substrate with interposition of the actuator. The piezoelectric element has piezoelectric bodies polarized along a first direction connecting the slider substrate and the magnetic head. The piezoelectric element has electrodes which apply an electric field to the piezoelectric bodies along a second direction intersecting the first direction.
摘要翻译：磁头滑动器包括滑块基板，设置在滑块基板的端部并配备有压电元件的致动器，以及设置在与滑块基板相对的一侧的磁头，插入致动器。压电元件具有沿连接滑块基板和磁头的第一方向偏振的压电体。压电元件具有沿着与第一方向交叉的第二方向向压电体施加电场的电极。

22. 发明申请

US20070029595A1 Semiconductor device and manufacturing method therefor 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20070029595A1
公开(公告)日：2007-02-08
申请号：US11580198
申请日：2006-10-13
申请人： Shigeyoshi Umemiya , Osamu Matsuura
发明人： Shigeyoshi Umemiya , Osamu Matsuura
IPC分类号： H01L29/94
CPC分类号： H01L27/11502 , H01L27/11585 , H01L27/1159 , H01L28/55 , H01L28/65 , H01L28/75
摘要： A bottom electrode (52) made of Ir, an initial layer (53), a core layer (54) and a termination layer (55) of a PZT film, and a top electrode (56) made of IrO2, are formed on an underlining film (51). The initial layer (53) is formed in a low oxygen partial pressure with a thickness of 5 nm. The thickness of the core layer (54) is set to 120 nm. The termination layer (55) is set to be an excess Zr layer. In other words, as for the composition of the termination layer (55), “Zr/(Zr+Ti)” is set to be larger than 0.5, and in the termination layer (55) Zr is contained more excessively than the morphotropic phase boundary composition.
摘要翻译：由Ir制成的底部电极（52），PZT膜的初始层（53），芯层（54）和端接层（55）以及由IrO 2制成的顶部电极（56） / SUB>形成在下衬膜（51）上。初始层（53）形成为厚度为5nm的低氧分压。芯层（54）的厚度设定为120nm。端接层（55）被设定为过量的Zr层。换句话说，对于终止层（55）的组成，“Zr /（Zr + Ti）”被设定为大于0.5，并且在终止层（55）中，Zr含有比常态相更多的Zr 边界组成。

23. 发明授权

US07029984B2 Method for fabricating semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US07029984B2
公开(公告)日：2006-04-18
申请号：US11136564
申请日：2005-05-25
申请人： Yoshimasa Horii , Masaaki Nakabayashi , Masaki Kurasawa , Kou Nakamura , Kazuaki Takai , Hideyuki Noshiro , Shigeyoshi Umemiya
发明人： Yoshimasa Horii , Masaaki Nakabayashi , Masaki Kurasawa , Kou Nakamura , Kazuaki Takai , Hideyuki Noshiro , Shigeyoshi Umemiya
IPC分类号： H01L21/8242
CPC分类号： H01L27/11507 , H01L27/11502
摘要： A method is disclosed for fabricating a semiconductor device having a memory employing a ferroelectric capacitor in which the orientation of the ferroelectric film is controlled. The method for fabricating the semiconductor device includes a first film deposition process for forming a first ferroelectric layer, and a second film deposition process for forming a second ferroelectric layer on the first ferroelectric layer. The film deposition temperature of the first film deposition process is set to at least 600° C.
摘要翻译：公开了一种用于制造具有其中控制强电介质膜的取向的铁电电容器的存储器的半导体器件的方法。制造半导体器件的方法包括用于形成第一铁电体层的第一膜沉积工艺和用于在第一铁电层上形成第二铁电层的第二膜沉积工艺。将第一膜沉积工艺的膜沉积温度设定为至少600℃

24. 发明申请

US20050215006A1 Method for fabricating semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20050215006A1
公开(公告)日：2005-09-29
申请号：US11136564
申请日：2005-05-25
申请人： Yoshimasa Horii , Masaaki Nakabayashi , Masaki Kurasawa , Kou Nakamura , Kazuaki Takai , Hideyuki Noshiro , Shigeyoshi Umemiya
发明人： Yoshimasa Horii , Masaaki Nakabayashi , Masaki Kurasawa , Kou Nakamura , Kazuaki Takai , Hideyuki Noshiro , Shigeyoshi Umemiya
IPC分类号： H01L21/00 , H01L21/8242 , H01L21/8246 , H01L21/84 , H01L27/04 , H01L27/105 , H01L27/115 , H04B3/00
CPC分类号： H01L27/11507 , H01L27/11502
摘要： A method is disclosed for fabricating a semiconductor device having a memory employing a ferroelectric capacitor in which the orientation of the ferroelectric film is controlled. The method for fabricating the semiconductor device includes a first film deposition process for forming a first ferroelectric layer, and a second film deposition process for forming a second ferroelectric layer on the first ferroelectric layer. The film deposition temperature of the first film deposition process is set to at least 600° C.
摘要翻译：公开了一种用于制造具有其中控制强电介质膜的取向的铁电电容器的存储器的半导体器件的方法。制造半导体器件的方法包括用于形成第一铁电体层的第一膜沉积工艺和用于在第一铁电层上形成第二铁电层的第二膜沉积工艺。将第一膜沉积工艺的膜沉积温度设定为至少600℃

25. 发明申请

US20090021867A1 Magnetic disk drive for controlling flying height of magnetic head 审中-公开
标题翻译：用于控制磁头飞行高度的磁盘驱动器
公开(公告)号：US20090021867A1
公开(公告)日：2009-01-22
申请号：US11999348
申请日：2007-12-05
申请人： Masao Kondo , Shigeyoshi Umemiya
发明人： Masao Kondo , Shigeyoshi Umemiya
IPC分类号： G11B21/24
CPC分类号： G11B5/6064 , G11B5/3133 , G11B5/40 , G11B5/6058 , G11B5/607 , G11B5/6076
摘要： A magnetic disk drive includes a magnetic head, a magnetic disk, an actuator for changing the position of the magnetic head with respect to the magnetic disk, a sensor for detecting vibration of the magnetic head; and a controller for detecting contact between the magnetic head and the magnetic disk on the basis of the detected vibration and for controlling the actuator.
摘要翻译：磁盘驱动器包括磁头，磁盘，用于改变磁头相对于磁盘的位置的致动器，用于检测磁头的振动的传感器; 以及控制器，用于基于检测到的振动来检测磁头和磁盘之间的接触，并用于控制致动器。

26. 发明授权

US07521745B2 Semiconductor device reducing leakage across a ferroelectric layer 有权
标题翻译：减少跨越铁电层的泄漏的半导体器件
公开(公告)号：US07521745B2
公开(公告)日：2009-04-21
申请号：US11580198
申请日：2006-10-13
申请人： Shigeyoshi Umemiya , Osamu Matsuura
发明人： Shigeyoshi Umemiya , Osamu Matsuura
IPC分类号： H01L29/92
CPC分类号： H01L27/11502 , H01L27/11585 , H01L27/1159 , H01L28/55 , H01L28/65 , H01L28/75
摘要： A bottom electrode (52) made of Ir, an initial layer (53), a core layer (54) and a termination layer (55) of a PZT film, and a top electrode (56) made of IrO2, are formed on an underlining film (51). The initial layer (53) is formed in a low oxygen partial pressure with a thickness of 5 nm. The thickness of the core layer (54) is set to 120 nm. The termination layer (55) is set to be an excess Zr layer. In other words, as for the composition of the termination layer (55), “Zr/(Zr+Ti)” is set to be larger than 0.5, and in the termination layer (55) Zr is contained more excessively than the morphotropic phase boundary composition.
摘要翻译：由Ir制成的底部电极（52），初始层（53），芯层（54）和PZT膜的终端层（55）和由IrO 2制成的顶部电极（56）形成在下薄膜（51）。初始层（53）形成为厚度为5nm的低氧分压。芯层（54）的厚度设定为120nm。端接层（55）被设定为过量的Zr层。换句话说，对于终止层（55）的组成，“Zr /（Zr + Ti）”被设定为大于0.5，并且在终止层（55）中，Zr含有比常态相更多的Zr 边界组成。

27. 发明授权

US06841489B2 Method of manufacturing a semiconductor device and method of forming a film 失效
标题翻译：制造半导体器件的方法和形成膜的方法
公开(公告)号：US06841489B2
公开(公告)日：2005-01-11
申请号：US10364379
申请日：2003-02-12
申请人： Shigeyoshi Umemiya , Kenji Maruyama
发明人： Shigeyoshi Umemiya , Kenji Maruyama
IPC分类号： C23C16/455 , C23C16/54 , H01L21/205 , H01L21/31
CPC分类号： C23C16/54
摘要： A semiconductor device manufacturing method includes the steps of (a) introducing a first substrate into a first CVD chamber; (b) raising the first substrate temperature to a predetermined value; (c) growing a film on the first substrate by supplying vapor phase material in a material line to the first chamber; (d) introducing a second substrate into a second CVD chamber; (e) raising the second substrate temperature to the predetermined value; and (f) growing a film on the second substrate by supplying the vapor phase material to the second chamber. Steps (c) and (f) supply the vapor phase material selectively to the first and second chambers, respectively. In step (f) after step (c), the chamber to which the vapor phase material is supplied is switched from the first chamber to the second chamber so that the pressure of the vapor phase material in the material line is kept substantially constant.
摘要翻译：半导体器件制造方法包括以下步骤：（a）将第一衬底引入第一CVD室; （b）将第一衬底温度升高到预定值; （c）通过将材料线中的气相材料供应到第一室，在第一基板上生长膜; （d）将第二衬底引入第二CVD室; （e）将所述第二基板温度升高到所述预定值; 和（f）通过将气相材料供应到第二室而在第二基板上生长膜。步骤（c）和（f）分别将气相材料选择性地供应到第一和第二室。在步骤（f）之后的步骤（f）中，将供应气相材料的室从第一室切换到第二室，使得材料管线中气相材料的压力基本上保持不变。

28. 发明授权

US6084610A Ink jet recording method and apparatus, ink and ink cartridge 失效
标题翻译：喷墨记录方法和装置，墨水和墨盒
公开(公告)号：US6084610A
公开(公告)日：2000-07-04
申请号：US585196
申请日：1996-01-11
申请人： Mitsuo Ozaki , Shigeharu Suzuki , Shino Sakai , Keita Akeno , Shigeyoshi Umemiya , Masahiro Mori , Takefumi Inagaki , Hiroo Ueda
发明人： Mitsuo Ozaki , Shigeharu Suzuki , Shino Sakai , Keita Akeno , Shigeyoshi Umemiya , Masahiro Mori , Takefumi Inagaki , Hiroo Ueda
IPC分类号： B41J2/175 , B41J2/21
CPC分类号： B41J2/2107
摘要： An ink jet recording method records an image on a recording medium by adhering inks of a plurality of hues on the recording medium. The ink jet recording method includes the steps of (a) carrying out a recording using two kinds of inks having different diffusibilities with respect to the recording medium for at least a predetermined one of the hues, where a first ink out of the two kinds of inks has a diffusibility which is lower than a diffusibility of an ink having a hue other than the predetermined hue, and (b) at a boundary portion on the recording medium where a first recording region which includes the predetermined hue and a second recording region which includes a hue different from the predetermined hue are adjacent to each other, recording at least a portion of the boundary region with a predetermined recording width up to the second recording region using a second ink out of the two kinds of inks having a diffusibility higher than that of the first ink and recording a remaining portion of the boundary region using the second ink.
摘要翻译：喷墨记录方法通过将多种色调的油墨粘附到记录介质上将图像记录在记录介质上。喷墨记录方法包括以下步骤：（a）使用对于至少一个预定的色调的记录介质具有不同扩散性的两种油墨进行记录，其中两种油墨具有低于具有除了预定色调之外的色调的油墨的扩散性的扩散性，和（b）在记录介质上的包含预定色调的第一记录区域和第二记录区域的边界部分，包括与预定色调不同的色调彼此相邻的情况下，使用扩散率高于2的两种油墨中的第二种墨水，将具有预定记录宽度的至少一部分边界区域记录到第二记录区域使用第二墨水记录第一墨水的边界区域的剩余部分。

29. 发明授权

US5784081A Method of and apparatus for cleaning ink jet head 失效
标题翻译：清洁喷墨头的方法和设备
公开(公告)号：US5784081A
公开(公告)日：1998-07-21
申请号：US409094
申请日：1995-03-23
申请人： Mitsuo Ozaki , Shigeharu Suzuki , Shino Sakai , Keita Akeno , Shigeyoshi Umemiya , Yasuo Yamagishi
发明人： Mitsuo Ozaki , Shigeharu Suzuki , Shino Sakai , Keita Akeno , Shigeyoshi Umemiya , Yasuo Yamagishi
IPC分类号： B41J2/165 , B41J2/18 , B41J2/185
CPC分类号： B41J2/16523
摘要： Disclosed are a method of and an apparatus for cleaning a plurality of nozzles of an ink jet head. This cleaning method comprises a step of covering a nozzle surface formed with the plurality of nozzles with a cap; a step of depressurizing an air space formed between the nozzle surface and the cap by use of a depressurizing element to suck the inks from the nozzles; a step of stopping the depressurization by the depressurizing element; a step of keeping the nozzle surface covered with the cap so that the inks jetted from the nozzles due to the depressurization wet-spread over the entire nozzle surface by a capillary force; and a step of retracting the cap from the nozzle surface. Further, in this cleaning apparatus, a contact angle .theta.1 between the ink and the cap internal surface and a contact angle .theta.2 between the ink and the nozzle surface are set to 90.degree. or smaller and also set such that .theta.2 is not greater than .theta.1.
摘要翻译：公开了一种用于清洁喷墨头的多个喷嘴的方法和设备。该清洁方法包括用盖覆盖形成有多个喷嘴的喷嘴表面的步骤; 通过使用减压元件对喷嘴表面和盖子之间形成的空气空间进行减压以从喷嘴吸取墨水的步骤; 通过减压元件停止减压的步骤; 保持喷嘴表面被盖盖住的步骤，使得由于减压而从喷嘴喷射的油墨通过毛细管力在整个喷嘴表面上湿扩散; 以及从喷嘴表面缩回盖的步骤。此外，在该清洁装置中，墨和盖内表面之间的接触角θ1和墨与喷嘴表面之间的接触角θ2设定为90度或更小，并且还设定为θ2不大比θ1。

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