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21. 发明授权

US08470511B2 Chemically amplified negative resist composition for EB or EUV lithography and patterning process 有权
标题翻译：用于EB或EUV光刻和图案化工艺的化学放大负光刻胶组合物
公开(公告)号：US08470511B2
公开(公告)日：2013-06-25
申请号：US13027446
申请日：2011-02-15
申请人： Keiichi Masunaga , Satoshi Watanabe , Akinobu Tanaka , Daisuke Domon
发明人： Keiichi Masunaga , Satoshi Watanabe , Akinobu Tanaka , Daisuke Domon
IPC分类号： G03F7/00 , G03F7/004 , G03F7/20
CPC分类号： G03F7/0382 , G03F7/038
摘要： A chemically amplified negative resist composition is provided comprising (A) an alkali-soluble polymer, (B) an acid generator, and (C) a nitrogen-containing compound as a basic component, the polymer (A) turning alkali insoluble under the catalysis of acid. A basic polymer having a secondary or tertiary amine structure on a side chain serves as components (A) and (C). Processing the negative resist composition by EB or EUV lithography process may form a fine size resist pattern with advantages including uniform diffusion of base, improved LER, controlled deactivation of acid at the substrate interface, and a reduced degree of undercut.
摘要翻译：提供一种化学放大型负性抗蚀剂组合物，其包含（A）碱溶性聚合物，（B）酸产生剂和（C）含氮化合物作为碱性成分，所述聚合物（A）在催化下使碱不溶的酸。在侧链上具有仲胺结构或叔胺结构的基本聚合物用作组分（A）和（C）。通过EB或EUV光刻工艺处理负光刻胶组合物可形成精细尺寸的抗蚀剂图案，其优点包括碱的均匀扩散，改进的LER，在底物界面处控制的酸的失活，以及降低的底切度。

22. 发明申请

US20110143266A1 NEGATIVE RESIST COMPOSITION AND PATTERNING PROCESS 有权
标题翻译：负极组合物和图案过程
公开(公告)号：US20110143266A1
公开(公告)日：2011-06-16
申请号：US12911338
申请日：2010-10-25
申请人： Akinobu Tanaka , Keiichi Masunaga , Daisuke Domon , Satoshi Watanabe
发明人： Akinobu Tanaka , Keiichi Masunaga , Daisuke Domon , Satoshi Watanabe
IPC分类号： G03F1/00 , G03F7/004 , G03F7/20
CPC分类号： G03F7/038 , G03F1/08 , G03F7/0045 , G03F7/0382 , G03F7/20 , Y10S430/111
摘要： There is disclosed a negative resist composition comprising at least: (A) a base polymer that is alkaline-soluble and is made alkaline-insoluble by action of an acid; (B) an acid generator; and (C) a basic component, wherein the base polymer at least contains a polymer including repeating units represented by the following general formula (1) and general formula (2) and having a weight average molecular weight of 1,000 to 10,000. There can be a negative resist composition hardly causing a bridge in forming a pattern and providing a high resolution and a patterning process using the same.
摘要翻译：公开了一种负性抗蚀剂组合物，其至少包含：（A）碱溶性碱性聚合物，并且通过酸的作用使其不溶于碱; （B）酸发生剂; 和（C）碱性成分，其中，所述基础聚合物至少含有包含由以下通式（1）和通式（2）表示的重均分子量为1,000〜10,000的聚合物。可以存在在形成图案时难以引起桥的负的抗蚀剂组合物，并且提供高分辨率和使用其的图案化工艺。

23. 发明申请

US20100304302A1 CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERN FORMING PROCESS 有权
标题翻译：化学稳定组合物和图案形成过程
公开(公告)号：US20100304302A1
公开(公告)日：2010-12-02
申请号：US12789747
申请日：2010-05-28
申请人： Keiichi MASUNAGA , Satoshi Watanabe , Akinobu Tanaka , Daisuke Domon
发明人： Keiichi MASUNAGA , Satoshi Watanabe , Akinobu Tanaka , Daisuke Domon
IPC分类号： G03F7/004 , G03F7/20
CPC分类号： G03F7/0045 , G03F7/0392 , G03F7/0397
摘要： A chemically amplified resist composition comprises a polymer comprising units having polarity to impart adhesion and acid labile units adapted to turn alkali soluble under the action of acid. The polymer comprises recurring units having formula (1) wherein R1 is H, F, CH3 or CF3, Rf is H, F, CF3 or CF2CF3, A is a divalent hydrocarbon group, R2, R3 and R4 are alkyl, alkenyl, oxoalkyl, aryl, aralkyl or aryloxoalkyl. Recurring units containing an aromatic ring structure are present in an amount ≧60 mol % and the recurring units having formula (1) are present in an amount
摘要翻译：化学放大抗蚀剂组合物包含含有极性赋予粘合性的单元的聚合物和适于在酸的作用下使碱溶性变成酸性不稳定单元。聚合物包含具有式（1）的重复单元，其中R 1是H，F，CH 3或CF 3，R f是H，F，CF 3或CF 2 CF 3，A是二价烃基，R 2，R 3和R 4是烷基，烯基，芳基，芳烷基或芳氧基烷基。含有芳环结构的重复单元的存在量为≥60mol％，并且具有式（1）的重复单元以<5mol％的量存在。

24. 发明申请

US20100009271A1 Resist patterning process and manufacturing photo mask 有权
标题翻译：抗蚀剂图案化工艺和制造光罩
公开(公告)号：US20100009271A1
公开(公告)日：2010-01-14
申请号：US12457544
申请日：2009-06-15
申请人： Takanobu Takeda , Satoshi Watanabe , Tamotsu Watanabe , Akinobu Tanaka , Keiichi Masunaga , Ryuji Koitabashi
发明人： Takanobu Takeda , Satoshi Watanabe , Tamotsu Watanabe , Akinobu Tanaka , Keiichi Masunaga , Ryuji Koitabashi
IPC分类号： G03F1/00 , G03F7/20
CPC分类号： G03F7/0392
摘要： There is disclosed a resist patterning process with a minimum line width of 65 nanometers or less may be formed by using a resist composition containing a polymer, as a base polymer of a chemically-amplified resist composition, composed of a styrene unit whose hydroxyl group is protected by an acid labile group, and an indene unit, and/or an acenaphthalene unit, wherein the polymer has the weight-average molecular weight of 4,000 to 7,000, and in particular, 4,500 to 5,500. One of the currently existing problems to be solved is the line edge roughness. To solve this problem by an acid-generator and a basic compound, there is a problem of the trade-off relationship with a resolution power. There can be provided a resist composition having a high resolution containing a base polymer such as hydroxystyrene that is protected by an acid labile group, a resist patterning process with a pattern rule of 65 nanometers or less having a reduced line edge roughness.
摘要翻译：公开了通过使用包含聚合物的抗蚀剂组合物形成最小线宽度为65纳米或更小的抗蚀剂图案化工艺，所述抗蚀剂组合物作为化学增强抗蚀剂组合物的基础聚合物，其由羟基为由酸不稳定基团和茚单元和/或苊单元保护，其中聚合物的重均分子量为4,000-7,000，特别是4,500-5,500。目前存在的问题之一是线边缘粗糙度。为了通过酸发生剂和碱性化合物来解决这个问题，存在与分辨能力的权衡关系的问题。可以提供具有高分辨率的抗蚀剂组合物，其含有由酸不稳定基团保护的羟基苯乙烯的基础聚合物，具有减少的线边缘粗糙度的图案规则为65纳米或更小的抗蚀剂图案化工艺。

25. 发明授权

US4507384A Pattern forming material and method for forming pattern therewith 失效
标题翻译：图案形成材料及其形成图案的方法
公开(公告)号：US4507384A
公开(公告)日：1985-03-26
申请号：US580468
申请日：1984-02-15
申请人： Masao Morita , Akinobu Tanaka , Saburo Imamura , Toshiaki Tamamura , Osamu Kogure
发明人： Masao Morita , Akinobu Tanaka , Saburo Imamura , Toshiaki Tamamura , Osamu Kogure
IPC分类号： C08G77/20 , C08G77/24 , G03F7/075 , G03F7/09 , G03C5/00
CPC分类号： G03F7/094 , C08G77/20 , C08G77/24 , G03F7/0757
摘要： A pattern forming material contains a siloxane polymer having the general formula: ##STR1## [wherein R, R' and R" are the same or different and are respectively one member selected from hydrogen, an alkyl group or a phenyl group; X is one member selected from fluorine, chlorine, bromine, iodine and a --CH.sub.2 Y group (wherein Y is one member selected from chlorine, fluorine, bromine, iodine, an acryloyloxy group, a methacryloyloxy group, and a cinnamoyloxy group); and l, m and n are respectively 0 or a positive integer, l and m not being simultaneously 0]. The material has a high sensitivity to high-energy radiation, a high contrast, and an excellent resistance to reactive ion etching under oxygen gas. The material is conveniently used as a negative resist for forming a submicron pattern having a high aspect ratio.
摘要翻译：图案形成材料包含具有以下通式的硅氧烷聚合物：其中R，R'和R“相同或不同，分别为选自氢，烷基或苯基的一个; X是选自氟，氯，溴，碘和-CH 2 Y基团中的一个（其中Y是选自氯，氟，溴，碘，丙烯酰氧基，甲基丙烯酰氧基和肉桂酰氧基中的一个）。 l，m和n分别为0或正整数，l和m不同时为0]。该材料对高能量辐射具有高灵敏度，高对比度，并且在氧气下具有优异的抗反应离子蚀刻性能。该材料方便地用作形成具有高纵横比的亚微米图案的负光刻胶。

26. 发明授权

US08557509B2 Negative resist composition, patterning process, and testing process and preparation process of negative resist composition 有权
标题翻译：负性抗蚀剂组成，图案化工艺，负极抗蚀剂组成的测试工艺及制备工艺
公开(公告)号：US08557509B2
公开(公告)日：2013-10-15
申请号：US12662435
申请日：2010-04-16
申请人： Akinobu Tanaka , Keiichi Masunaga , Daisuke Domon , Satoshi Watanabe
发明人： Akinobu Tanaka , Keiichi Masunaga , Daisuke Domon , Satoshi Watanabe
IPC分类号： G03F7/004 , G03F7/028 , G03F7/26
CPC分类号： G03F7/0382 , G03F7/0045 , G03F7/30 , G03F7/322
摘要： There is disclosed a negative resist composition comprising at least (A) a base resin that is alkaline-soluble and is made alkaline-insoluble by action of an acid, and/or a combination of a base resin that is alkaline-soluble and is made alkaline-insoluble by reaction with a crosslinker by action of an acid, with a crosslinker, (B) an acid generator, and (C) a compound containing a nitrogen as a basic component, and forming a resist film having the film thickness X (nm) of 50 to 100 nm, wherein, in the case that the resist film is formed from the negative resist composition under the film-forming conditions for the pattern formation, a dissolution rate of the resist film into the alkaline developer used in the development treatment for the pattern formation is 0.0333X−1.0 (nm/second) or more and 0.0667X−1.6 (nm/second) or less. There can be a negative resist composition having excellent etching resistance and resolution and giving a good pattern profile even at the substrate's interface, a patterning process using the same, and a testing process and a preparation process of this negative resist composition.
摘要翻译：公开了一种负性抗蚀剂组合物，其至少包含（A）碱溶性碱性树脂，并且通过酸的作用而成为碱不溶性，和/或碱溶性碱性树脂的组合通过与交联剂的反应，通过与交联剂的反应，（B）酸产生剂和（C）含有氮作为碱性成分的化合物，并且形成具有膜厚度X（ nm）为50〜100nm，其中，在用于图案形成的成膜条件下，由抗蚀剂组合物形成抗蚀剂膜的情况下，抗蚀剂膜在显影剂中使用的碱性显影剂的溶解速度图案形成的处理为0.0333X-1.0（nm /秒）以上且0.0667X-1.6（nm /秒）以下。可以存在耐蚀性和分辨率优异的负光刻胶组合物，即使在基板的界面也能得到良好的图案图案，使用该抗蚀剂组合物的图案化工艺，以及该负型抗蚀剂组合物的测试方法和制备方法。

27. 发明授权

US08361692B2 Negative resist composition and patterning process using the same 有权
标题翻译：负光刻胶组合物和使用其的图案化工艺
公开(公告)号：US08361692B2
公开(公告)日：2013-01-29
申请号：US12662763
申请日：2010-05-03
申请人： Akinobu Tanaka , Keiichi Masunaga , Daisuke Domon , Satoshi Watanabe
发明人： Akinobu Tanaka , Keiichi Masunaga , Daisuke Domon , Satoshi Watanabe
IPC分类号： G03F7/004 , G03F7/038 , G03F7/26
CPC分类号： G03F7/0382
摘要： There is disclosed a negative resist composition comprising (A) a base polymer which is soluble in alkali and which is insolubilized in alkali by an action of an acid; and/or a combination of a crosslinking agent and a base polymer which is soluble in alkali and which is reacted with the crosslinking agent by an action of an acid to thereby be insolubilized in alkali, (B) an acid generator, and (C) a nitrogen-containing compound as a basic component; wherein the polymer to be used as the base polymer is: a polymer, which is obtained by polymerizing two or more kinds of monomers represented by the following general formula (1), or which is obtained by polymerizing a monomer mixture containing one or more kinds of monomers represented by the general formula (1) and one or more kinds of styrene monomers represented by the following general formula (2).
摘要翻译：公开了一种负型抗蚀剂组合物，其包含（A）可溶于碱的碱性聚合物，其通过酸的作用在碱中不溶解; 和/或交联剂和碱性聚合物的组合，其可溶于碱，并通过酸的作用与交联剂反应，从而不溶于碱，（B）酸产生剂，和（C）作为碱性成分的含氮化合物; 其中用作基础聚合物的聚合物是：通过聚合由以下通式（1）表示的两种或更多种单体获得的聚合物，或通过使含有一种或多种的单体混合物的由通式（1）表示的单体和一种或多种由以下通式（2）表示的苯乙烯单体。

28. 发明授权

US08288076B2 Chemically amplified resist composition and pattern forming process 有权
标题翻译：化学放大抗蚀剂组成和图案形成工艺
公开(公告)号：US08288076B2
公开(公告)日：2012-10-16
申请号：US12789747
申请日：2010-05-28
申请人： Keiichi Masunaga , Satoshi Watanabe , Akinobu Tanaka , Daisuke Domon
发明人： Keiichi Masunaga , Satoshi Watanabe , Akinobu Tanaka , Daisuke Domon
IPC分类号： G03F7/004 , G03F7/30
CPC分类号： G03F7/0045 , G03F7/0392 , G03F7/0397
摘要： A chemically amplified resist composition comprises a polymer comprising units having polarity to impart adhesion and acid labile units adapted to turn alkali soluble under the action of acid. The polymer comprises recurring units having formula (1) wherein R1 is H, F, CH3 or CF3, Rf is H, F, CF3 or CF2CF3, A is a divalent hydrocarbon group, R2, R3 and R4 are alkyl, alkenyl, oxoalkyl, aryl, aralkyl or aryloxoalkyl. Recurring units containing an aromatic ring structure are present in an amount ≧60 mol % and the recurring units having formula (1) are present in an amount
摘要翻译：化学放大抗蚀剂组合物包含含有极性赋予粘合性的单元的聚合物和适于在酸的作用下使碱溶性变成酸性不稳定单元。聚合物包含具有式（1）的重复单元，其中R 1是H，F，CH 3或CF 3，R f是H，F，CF 3或CF 2 CF 3，A是二价烃基，R 2，R 3和R 4是烷基，烯基，芳基，芳烷基或芳氧基烷基。含有芳环结构的重复单元的存在量为≥60mol％，并且具有式（1）的重复单元以<5mol％的量存在。

29. 发明授权

US08252518B2 Chemically amplified positive resist composition and resist patterning process 有权
标题翻译：化学扩增正性抗蚀剂组合物和抗蚀剂图案化工艺
公开(公告)号：US08252518B2
公开(公告)日：2012-08-28
申请号：US12591540
申请日：2009-11-23
申请人： Akinobu Tanaka , Takanobu Takeda , Satoshi Watanabe
发明人： Akinobu Tanaka , Takanobu Takeda , Satoshi Watanabe
IPC分类号： G03F7/039 , G03F7/20 , G03F7/30 , G03F7/09
CPC分类号： G03F7/0395 , G03F7/0045 , G03F7/0392
摘要： There is disclosed a chemically amplified positive resist composition to form a chemically amplified resist film to be used in a lithography, wherein the chemically amplified positive resist composition comprises at least, (A) a base resin, insoluble or poorly soluble in an alkaline solution, having a repeating unit whose phenolic ydroxyl group is protected by a tertiary alkyl group, while soluble in an alkaline solution when the tertiary alkyl group is removed; (B) an acid generator; (C) a basic component; and (D) an organic solvent, and a solid component concentration is controlled so that the chemically amplified resist film having the film thickness of 10 to 100 nm is obtained by a spin coating method. There can be provided, in a lithography, a chemically amplified positive resist composition giving a high resolution with a suppressed LER deterioration caused by film-thinning at the time of forming a chemically amplified resist film with the film thickness of 10 to 100 nm, and a resist patterning process using the same.
摘要翻译：公开了一种化学放大的正性抗蚀剂组合物，以形成用于光刻的化学放大的抗蚀剂膜，其中化学放大的正性抗蚀剂组合物至少包含（A）不溶于或难溶于碱性溶液的基础树脂，具有酚羟基被叔烷基保护的重复单元，当叔烷基被除去时可溶于碱性溶液; （B）酸发生剂; （C）基本组成部分; 和（D）有机溶剂，并且通过旋涂法获得固体成分浓度，从而得到膜厚为10〜100nm的化学放大型抗蚀剂膜。在平版印刷法中，可以提供化学放大的正性抗蚀剂组合物，其在形成具有10至100nm的膜厚度的化学放大型抗蚀剂膜时产生具有抑制的由薄膜变薄引起的LER劣化的高分辨率，以及使用其的抗蚀剂图案化工艺。

30. 发明申请

US20100304301A1 Negative resist composition and patterning process using the same 有权
标题翻译：负光刻胶组合物和使用其的图案化工艺
公开(公告)号：US20100304301A1
公开(公告)日：2010-12-02
申请号：US12662763
申请日：2010-05-03
申请人： Akinobu Tanaka , Keiichi Masunaga , Daisuke Domon , Satoshi Watanabe
发明人： Akinobu Tanaka , Keiichi Masunaga , Daisuke Domon , Satoshi Watanabe
IPC分类号： G03F7/004 , G03F7/20
CPC分类号： G03F7/0382
摘要： There is disclosed a negative resist composition comprising (A) a base polymer which is soluble in alkali and which is insolubilized in alkali by an action of an acid; and/or a combination of a crosslinking agent and a base polymer which is soluble in alkali and which is reacted with the crosslinking agent by an action of an acid to thereby be insolubilized in alkali, (B) an acid generator, and (C) a nitrogen-containing compound as a basic component; wherein the polymer to be used as the base polymer is: a polymer, which is obtained by polymerizing two or more kinds of monomers represented by the following general formula (1), or which is obtained by polymerizing a monomer mixture containing one or more kinds of monomers represented by the general formula (1) and one or more kinds of styrene monomers represented by the following general formula (2).
摘要翻译：公开了一种负型抗蚀剂组合物，其包含（A）可溶于碱的碱性聚合物，其通过酸的作用在碱中不溶解; 和/或交联剂和碱性聚合物的组合，其可溶于碱，并通过酸的作用与交联剂反应，从而不溶于碱，（B）酸产生剂，和（C）作为碱性成分的含氮化合物; 其中用作基础聚合物的聚合物是：通过聚合由以下通式（1）表示的两种或更多种单体获得的聚合物，或通过使含有一种或多种的单体混合物的由通式（1）表示的单体和一种或多种由以下通式（2）表示的苯乙烯单体。

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