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    • 21. 发明申请
    • POWER CONVERTING DEVICE AND METHOD FOR CONTROLLING THE SAME
    • 电力转换装置及其控制方法
    • US20090168474A1
    • 2009-07-02
    • US11964274
    • 2007-12-26
    • Shuji KatohYasuhiro KiyofujiShoichiro KosekiTomomichi ItoMotoo Futami
    • Shuji KatohYasuhiro KiyofujiShoichiro KosekiTomomichi ItoMotoo Futami
    • H02M1/00
    • H02J3/01Y02E40/40
    • In a system to which a fluctuating load is connected, compensating for fluctuation in voltage harmonics at the load connecting point and fluctuation in system current harmonics has been difficult for a power converting device connected in parallel with the load. To resolve the problem, a power converting device connected in parallel with a fluctuating load includes: a Fourier series expansion unit which executes Fourier series expansion to load current by use of a reference sine wave in sync with a system and thereby outputs Fourier coefficients; and a fundamental component calculating unit which calculates a positive phase active fundamental component of the load current from the Fourier coefficients. A current instruction of the power converting device is generated by subtracting the fundamental current from the load current. With the current instruction, the fluctuations in system current harmonics and in voltage harmonics at the connecting point can be compensated for.
    • 在连接波动负载的系统中,与负载并联连接的电力转换装置难以补偿负载连接点的电压谐波的波动和系统电流谐波的波动。 为了解决该问题,与波动负载并联连接的电力转换装置包括:傅立叶级数扩展单元,其通过使用与系统同步的参考正弦波来执行傅立叶级数展开以加载电流,从而输出傅里叶系数; 以及从傅立叶系数计算负载电流的正相位有源基波分量的基波分量计算单元。 通过从负载电流中减去基波电流来产生电力转换装置的电流指令。 利用当前的指令,可以补偿系统电流谐波和连接点电压谐波的波动。
    • 22. 发明授权
    • Semiconductor power converting apparatus
    • 半导体电力转换装置
    • US06809561B2
    • 2004-10-26
    • US10638400
    • 2003-08-12
    • Shuji KatohShigeta UedaHiromitsu SakaiTakashi IkimiTomomichi Ito
    • Shuji KatohShigeta UedaHiromitsu SakaiTakashi IkimiTomomichi Ito
    • H03K300
    • H02M1/32H03K17/0828H03K17/107
    • A semiconductor power converting apparatus including at least one series arrangement of MOS control semiconductor devices such as Insulator-gate Bipolar Transistors (IGBTs) or metal oxide MOS transistors which are respectively applied with a gate voltage under the control of corresponding a driver. The driver contains a supply line having a higher potential than a gate voltage of an IGBT coupled thereto when the IGBT is in a steady ON state, and is such that is causes an increase of the gate voltage of the IGBT in accordance with the current of the supply line when a potential difference between the power supply line and an emitter of the IGBT is constant and the collector voltage thereof exceeds a predetermined value under an ON state of the IGBT.
    • 一种半导体功率转换装置,包括在相应的驱动器的控制下分别施加栅极电压的MOS控制半导体器件如绝缘体 - 栅双极晶体管(IGBT)或金属氧化物MOS晶体管的至少一个串联布置。 当IGBT处于稳定导通状态时,驱动器具有比与其耦合的IGBT的栅极电压更高的电位的电源线,并且使得根据电流的电流使IGBT的栅极电压增加 在IGBT的导通状态下,当电源线和IGBT的发射极之间的电位差恒定并且集电极电压超过预定值时,电源线。