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21. 发明授权

US06611014B1 Semiconductor device having ferroelectric capacitor and hydrogen barrier film and manufacturing method thereof 失效
标题翻译：具有铁电电容器和氢阻挡膜的半导体器件及其制造方法
公开(公告)号：US06611014B1
公开(公告)日：2003-08-26
申请号：US09570026
申请日：2000-05-12
申请人： Hiroyuki Kanaya , Toyota Morimoto , Osamu Hidaka , Yoshinori Kumura , Iwao Kunishima , Tsuyoshi Iwamoto
发明人： Hiroyuki Kanaya , Toyota Morimoto , Osamu Hidaka , Yoshinori Kumura , Iwao Kunishima , Tsuyoshi Iwamoto
IPC分类号： H01L2966
CPC分类号： H01L27/11502 , H01L27/11507 , H01L28/55
摘要： A semiconductor device having a semiconductor substrate; an insulating film formed on said semiconductor substrate; a ferroelectric capacitor having a lower electrode, a ferroelectric film and an upper electrode which are stacked sequentially on the insulating film; a first hydrogen barrier film; a first inter-layer insulating film covering said ferroelectric capacitor; and a second inter-layer insulating film stacked on the first inter-layer insulating film, the first hydrogen barrier film being interposed between the first and second interlayer insulating films is proposed.
摘要翻译：一种具有半导体衬底的半导体器件; 形成在所述半导体衬底上的绝缘膜; 具有下电极，强电介质膜和上电极的铁电电容器，其顺序层叠在绝缘膜上; 第一氢阻挡膜; 覆盖所述铁电电容器的第一层间绝缘膜; 以及叠层在第一层间绝缘膜上的第二层间绝缘膜，提出介于第一和第二层间绝缘膜之间的第一氢阻挡膜。

22. 发明申请

US20100072525A1 SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：半导体存储器件及其制造方法
公开(公告)号：US20100072525A1
公开(公告)日：2010-03-25
申请号：US12553923
申请日：2009-09-03
申请人： Yoshiro Shimojo , Tohru Ozaki , Yoshinori Kumura
发明人： Yoshiro Shimojo , Tohru Ozaki , Yoshinori Kumura
IPC分类号： H01L27/108 , H01L21/02
CPC分类号： H01L27/11512 , H01L27/11507 , H01L28/55
摘要： According to a method for manufacturing a semiconductor memory device of the present invention, a capacitor lower electrode film is left on the wiring layer located above a dummy transistor. In this manner, when processing of the capacitors is performed by removing a capacitor upper electrode film and a ferroelectric film, removal of the wiring layer can be prevented, and the connection between the diffusion layer of a select transistor and a bit line can be secured.
摘要翻译：根据本发明的半导体存储器件的制造方法，在位于虚拟晶体管上方的布线层上留下电容器下电极膜。以这种方式，当通过去除电容器上电极膜和铁电体膜来执行电容器的处理时，可以防止布线层的去除，并且可以确保选择晶体管的扩散层和位线之间的连接。

23. 发明申请

US20100052022A1 NONVOLATILE MEMORY AND MANUFACTURING METHOD THEREOF 失效
标题翻译：非易失性存储器及其制造方法
公开(公告)号：US20100052022A1
公开(公告)日：2010-03-04
申请号：US12549163
申请日：2009-08-27
申请人： Yoshinori Kumura
发明人： Yoshinori Kumura
IPC分类号： H01L27/115 , H01L21/00 , H01L21/336
CPC分类号： H01L27/11507 , H01L27/11509 , H01L28/55
摘要： According to an aspect of the present invention, there is provided a nonvolatile memory including: a cell transistor including: a gate electrode and first and second diffusion layers; a second insulating film covering the cell transistor; first and second plugs penetrating the second insulating film to reach the first and second diffusion layers, respectively; a ferroelectric capacitor having a ferroelectric film and first and second electrodes, the first electrode contacting with the first plug; a first conductive spacer contacting with the second plug and including the same material as the first electrode; a third insulating film covering side faces of the first electrode, the ferroelectric film and the first conductive spacer; and a first wiring that is continuously formed with the second electrode and connected to the first conductive spacer and that includes the same material as the second electrode.
摘要翻译：根据本发明的一个方面，提供了一种非易失性存储器，包括：单元晶体管，包括：栅电极和第一和第二扩散层; 覆盖单元晶体管的第二绝缘膜; 分别穿过第二绝缘膜的第一和第二插塞到达第一和第二扩散层; 具有铁电体膜的铁电电容器和第一和第二电极，所述第一电极与所述第一插塞接触; 与所述第二插头接触并且包括与所述第一电极相同的材料的第一导电间隔件; 覆盖第一电极，铁电体膜和第一导电间隔物的侧面的第三绝缘膜; 以及第一布线，其与第二电极连续地形成并且连接到第一导电间隔物并且包括与第二电极相同的材料。

24. 发明授权

US07214982B2 Semiconductor memory device and method of manufacturing the same 失效
标题翻译：半导体存储器件及其制造方法
公开(公告)号：US07214982B2
公开(公告)日：2007-05-08
申请号：US10959223
申请日：2004-10-07
申请人： Yoshinori Kumura , Iwao Kunishima , Tohru Ozaki
发明人： Yoshinori Kumura , Iwao Kunishima , Tohru Ozaki
IPC分类号： H01L27/108
CPC分类号： H01L29/945 , H01L27/11502 , H01L27/11507 , H01L29/66181
摘要： A semiconductor device including a ferroelectric random access memory, which has a structure suitable for miniaturization and easy to manufacture, and having less restrictions on materials to be used, comprises a field effect transistor formed on a surface area of a semiconductor wafer, a trench ferroelectric capacitor formed in the semiconductor wafer in one source/drain of the field effect transistor, wherein one electrode thereof is connected to the source/drain, and a wiring formed in the semiconductor wafer and connected to the other electrode of the trench ferroelectric capacitor.
摘要翻译：包括具有适于小型化并易于制造并且对材料使用限制较少的结构的铁电随机存取存储器的半导体器件包括形成在半导体晶片的表面区域上的场效应晶体管，沟槽铁电体电容器形成在场效应晶体管的一个源极/漏极中的半导体晶片中，其中一个电极连接到源极/漏极，以及形成在半导体晶片中并连接到沟槽铁电电容器的另一个电极的布线。

25. 发明申请

US20070045687A1 Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US20070045687A1
公开(公告)日：2007-03-01
申请号：US11288204
申请日：2005-11-29
申请人： Yoshinori Kumura , Tohru Ozaki , Susumu Shuto , Yoshiro Shimojo , Iwao Kunishima
发明人： Yoshinori Kumura , Tohru Ozaki , Susumu Shuto , Yoshiro Shimojo , Iwao Kunishima
IPC分类号： H01L29/94 , H01L29/76 , H01L31/00
CPC分类号： H01L27/11502 , H01L27/11507 , H01L28/57 , H01L28/65
摘要： A semiconductor device comprising a ferroelectric capacitor having improved reliability is disclosed. According to one aspect of the present invention, it is provided a semiconductor device comprising a transistor formed on a semiconductor substrate, a ferroelectric capacitor formed above the transistor and comprising a lower electrode, a ferroelectric film and an upper electrode, a first hydrogen barrier film formed over the ferroelectric capacitor, an insulator formed over the first hydrogen barrier film, a contact plug disposed in the insulator and electrically connected with the upper electrode, a second hydrogen barrier film disposed between the contact plug and the insulator continuously, and a wiring connected with the contact plug.
摘要翻译：公开了一种包括具有改善的可靠性的铁电电容器的半导体器件。根据本发明的一个方面，提供了一种半导体器件，包括形成在半导体衬底上的晶体管，形成在晶体管上方的铁电电容器，包括下电极，铁电体膜和上电极，第一氢阻挡膜形成在所述铁电电容器上，形成在所述第一氢阻挡膜上的绝缘体，设置在所述绝缘体中并与所述上电极电连接的接触插塞，连续地配置在所述接触插塞和所述绝缘体之间的第二氢阻挡膜，与接触插头。

26. 发明授权

US09312476B2 Magnetic memory 有权
标题翻译：磁记忆
公开(公告)号：US09312476B2
公开(公告)日：2016-04-12
申请号：US14631049
申请日：2015-02-25
申请人： Yoshinori Kumura
发明人： Yoshinori Kumura
IPC分类号： H01L27/00 , H01L43/00 , H01L43/08 , H01L43/02 , H01L43/12 , H01L27/24 , H01L27/22 , H01F10/32 , H01F41/30
CPC分类号： H01L43/08 , H01F10/3254 , H01F41/307 , H01L27/228 , H01L27/2472 , H01L43/02 , H01L43/12
摘要： According to one embodiment, a magnetic memory is disclosed. The magnetic memory includes a substrate, and a contact plug provided on the substrate. The contact plug includes a first contact plug, and a second contact plug provided on the first contact plug and having a smaller diameter than that of the first contact plug. The magnetic memory further includes a magnetoresistive element provided on the second contact plug. The diameter of the second contact plug is smaller than that of the magnetoresistive element.
摘要翻译：根据一个实施例，公开了一种磁存储器。磁性存储器包括衬底和设置在衬底上的接触插塞。所述接触插塞包括第一接触插塞和设置在所述第一接触插塞上并且具有比所述第一接触插塞小的直径的第二接触插塞。磁存储器还包括设置在第二接触插塞上的磁阻元件。第二接触插塞的直径小于磁阻元件的直径。

27. 发明授权

US07573084B2 Non-volatile semiconductor memory device and method for fabricating the same 失效
标题翻译：非易失性半导体存储器件及其制造方法
公开(公告)号：US07573084B2
公开(公告)日：2009-08-11
申请号：US11898949
申请日：2007-09-18
申请人： Yoshinori Kumura , Tohru Ozaki , Iwao Kunishima
发明人： Yoshinori Kumura , Tohru Ozaki , Iwao Kunishima
IPC分类号： H01L27/108
CPC分类号： H01L27/11502 , H01L27/11507 , H01L28/57
摘要： According to an aspect of the present invention, there is provided a non-volatile semiconductor memory device, including a ferroelectric capacitor being stacked a first electrode, a ferroelectric film and a second electrode in order, a first protective film with hydrogen barrier performance, the first protective film being formed under the first electrode and on a side-wall of the ferroelectric capacitor, the first protective film being widened from the second electrode towards the first electrode, a second protective film with hydrogen barrier performance, the second protective film being formed over the second electrode and on the first protective film formed on the side-wall of the ferroelectric capacitor, the second protective film being widened from the first electrode towards the second electrode, a cell transistor, a source of the cell transistor being connected to the first electrode, a drain of the cell transistor being connected to a bit line and a gate being connected to a word line.
摘要翻译：根据本发明的一个方面，提供了一种非易失性半导体存储器件，包括堆叠第一电极，铁电体膜和第二电极的铁电电容器，具有氢阻挡性能的第一保护膜，第一保护膜形成在第一电极下方和铁电电容器的侧壁上，第一保护膜从第二电极朝向第一电极加宽，具有氢阻挡性能的第二保护膜，形成第二保护膜在第二电极上以及形成在铁电电容器的侧壁上的第一保护膜上，第二保护膜从第一电极朝向第二电极加宽，单元晶体管，单元晶体管的源极连接到第一电极，单元晶体管的漏极连接到位线，栅极连接到aw ord行。

28. 发明申请

US20090095993A1 SEMICONDUCTOR MEMORY DEVICE AND FABRICATING METHOD FOR SEMICONDUCTOR MEMORY DEVICE 审中-公开
标题翻译：半导体存储器件的半导体存储器件和制造方法
公开(公告)号：US20090095993A1
公开(公告)日：2009-04-16
申请号：US12244210
申请日：2008-10-02
申请人： Tohru Ozaki , Yoshinori Kumura
发明人： Tohru Ozaki , Yoshinori Kumura
IPC分类号： H01L27/115 , H01L21/8246
CPC分类号： H01L27/11502 , H01L27/11507 , H01L28/57
摘要： According to an aspect of the present invention, there is provided a semiconductor memory device including a ferroelectric capacitor, including a semiconductor substrate, a transistor having diffusion layers being a source and a drain, the transistor being formed on a surface of the semiconductor substrate, a ferroelectric capacitor being formed over the transistor, the ferroelectric capacitor including a lower electrode, a ferroelectric film and an upper electrode stacked in order, an interlayer insulator separating between the transistor and the ferroelectric capacitor, a first contact plug being embedded in the interlayer insulator formed beneath the ferroelectric capacitor, the first contact plug directly connecting between one of the diffusion layers and the lower electrode, a first hydrogen barrier film covering the transistor a second hydrogen barrier film, a portion of the second hydrogen barrier film being formed on the first hydrogen barrier film, another portion of the second hydrogen barrier film covering at least the ferroelectric capacitor, and a second contact plug being embedded in the interlayer insulator, the second hydrogen barrier film and the first hydrogen barrier film, one end of the second contact plug connecting to the other of the diffusion layers.
摘要翻译：根据本发明的一个方面，提供了一种包括具有半导体衬底的铁电电容器，具有源极和漏极的扩散层的晶体管的半导体存储器件，晶体管形成在半导体衬底的表面上，形成在晶体管上的强电介质电容器，所述强电介质电容器包括下电极，强电介质膜和依次堆叠的上电极，分隔在所述晶体管和所述铁电电容器之间的层间绝缘体，第一接触插塞嵌入所述层间绝缘体形成在强电介质电容器下方的第一接触插塞，直接连接在一个扩散层和下电极之间的第一接触插塞，第一氢阻挡膜，覆盖晶体管第二氢阻挡膜，第二氢阻挡膜的一部分形成在第一氢屏障膜，另一部分的secon d氢屏障膜，其至少覆盖所述铁电电容器，以及第二接触插塞，其被嵌入在所述层间绝缘体中，所述第二氢阻挡膜和所述第一氢阻挡膜，所述第二接触插塞的一端连接到所述扩散层中的另一个。

29. 发明申请

US20080230818A1 NON-VOLATILE MEMORY DEVICE 审中-公开
标题翻译：非易失性存储器件
公开(公告)号：US20080230818A1
公开(公告)日：2008-09-25
申请号：US12053137
申请日：2008-03-21
申请人： Yoshinori Kumura , Tohru Ozaki , Iwao Kunishima
发明人： Yoshinori Kumura , Tohru Ozaki , Iwao Kunishima
IPC分类号： H01L27/108 , H01L21/8242
CPC分类号： H01L27/11502 , H01L27/11507 , H01L28/55
摘要： According to an aspect of the present invention, there is provided a non-volatile memory including: a transistor formed on a semiconductor substrate, the transistor including: two diffusion layers and a gate therebetween; a first insulating film formed on a top and a side surfaces of the gate; a first and a second contact plugs formed on corresponding one of the diffusion layers to contact the first insulating film; a ferroelectric capacitor formed on the first contact plug and on the first insulating film, the ferroelectric capacitor including: a first and a second electrodes and a ferroelectric film therebetween; a third contact plug formed on the second electrode; and a fourth contact plug formed on the second contact plug.
摘要翻译：根据本发明的一个方面，提供了一种非易失性存储器，包括：形成在半导体衬底上的晶体管，所述晶体管包括：两个扩散层和栅极; 形成在栅极的顶部和侧表面上的第一绝缘膜; 第一和第二接触塞形成在相应的一个扩散层上以接触第一绝缘膜; 形成在所述第一接触插塞和所述第一绝缘膜上的强电介质电容器，所述强电介质电容器包括：第一和第二电极及其间的铁电体膜; 形成在所述第二电极上的第三接触插塞; 以及形成在所述第二接触插塞上的第四接触插塞。

30. 发明申请

US20080073682A1 Non-volatile semiconductor memory device and method for fabricating the same 失效
标题翻译：非易失性半导体存储器件及其制造方法
公开(公告)号：US20080073682A1
公开(公告)日：2008-03-27
申请号：US11898949
申请日：2007-09-18
申请人： Yoshinori Kumura , Tohru Ozaki , Iwao Kunishima
发明人： Yoshinori Kumura , Tohru Ozaki , Iwao Kunishima
IPC分类号： H01L29/94 , H01L21/00
CPC分类号： H01L27/11502 , H01L27/11507 , H01L28/57
摘要： According to an aspect of the present invention, there is provided a non-volatile semiconductor memory device, including a ferroelectric capacitor being stacked a first electrode, a ferroelectric film and a second electrode in order, a first protective film with hydrogen barrier performance, the first protective film being formed under the first electrode and on a side-wall of the ferroelectric capacitor, the first protective film being widened from the second electrode towards the first electrode, a second protective film with hydrogen barrier performance, the second protective film being formed over the second electrode and on the first protective film formed on the side-wall of the ferroelectric capacitor, the second protective film being widened from the first electrode towards the second electrode, a cell transistor, a source of the cell transistor being connected to the first electrode, a drain of the cell transistor being connected to a bit line and a gate being connected to a word line.
摘要翻译：根据本发明的一个方面，提供了一种非易失性半导体存储器件，包括堆叠第一电极，铁电体膜和第二电极的铁电电容器，具有氢阻挡性能的第一保护膜，第一保护膜形成在第一电极下方和铁电电容器的侧壁上，第一保护膜从第二电极朝向第一电极加宽，具有氢阻挡性能的第二保护膜，形成第二保护膜在第二电极上以及形成在铁电电容器的侧壁上的第一保护膜上，第二保护膜从第一电极朝向第二电极加宽，单元晶体管，单元晶体管的源极连接到第一电极，单元晶体管的漏极连接到位线，栅极连接到aw ord行。

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