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    • 24. 发明授权
    • Sliding mechanism with changeable paths and cellular phone having the same
    • 具有可变路径的滑动机构和具有相同功能的蜂窝电话
    • US08374659B2
    • 2013-02-12
    • US13098875
    • 2011-05-02
    • Hsin-Chih ChenAlan C. Lin
    • Hsin-Chih ChenAlan C. Lin
    • H04M1/00
    • H04M1/0237Y10T74/18872
    • A sliding mechanism with changeable paths and a cellular phone are disclosed. The sliding mechanism comprises a sliding plate, a V-shaped resilience device, and a fixed plate. The sliding plate is fixed to a sliding portion of the cellular phone, and the fixed plate is fixed on a holding base of the cellular phone. When the sliding plate is pushed to move a predetermined distance, the sliding plate can be driven by the resilient force of the V-shaped resilience device to automatically slide with respect to a V-shaped support having a turning ring and along guiding slots and guiding edges on the fixed plate. The sliding plate can automatically slide through a remaining portion of a path when the sliding plate is first pushed to move a predetermined distance, thereby enabling answering or hanging up of the cellular phone semi-automatically.
    • 公开了具有可变路径的滑动机构和蜂窝电话。 滑动机构包括滑板,V形弹性装置和固定板。 滑板固定在便携式电话的滑动部分上,固定板固定在蜂窝电话的保持基座上。 当滑动板被推动移动预定距离时,滑动板可以由V形回弹装置的弹力驱动,以相对于具有转动环的V形支承件自动滑动并且沿导向槽和导向 固定板上的边缘。 当滑板首先被推动以移动预定距离时,滑板可以自动滑过路径的剩余部分,从而半自动地应答或挂起蜂窝电话。
    • 25. 发明申请
    • MULTI-FIN DEVICE BY SELF-ALIGNED CASTLE FIN FORMATION
    • 通过自对准城堡形成的多功能设备
    • US20120091511A1
    • 2012-04-19
    • US12907272
    • 2010-10-19
    • Hsin-Chih ChenTsung-Lin LeeFeng Yuan
    • Hsin-Chih ChenTsung-Lin LeeFeng Yuan
    • H01L29/772H01L21/302
    • H01L29/772H01L21/3086H01L29/66795H01L29/785
    • The present disclosure provides a method includes forming a multi-fin device. The method includes forming a patterned mask layer on a semiconductor substrate. The patterned mask layer includes a first opening having a first width W1 and a second opening having a second width W2 less than the first width. The patterned mask layer defines a multi-fin device region and an inter-device region, wherein the inter-device region is aligned with the first opening; and the multi-fin device region includes at least one intra-device region being aligned with the second opening. The method further includes forming a material layer on the semiconductor substrate and the patterned mask layer, wherein the material layer substantially fills in the second opening; performing a first etching process self-aligned to remove the material layer within the first opening such that the semiconductor substrate within the first opening is exposed; performing a second etching process to etch the semiconductor substrate within the first opening, forming a first trench in the inter-device region; and thereafter performing a third etching process to remove the material layer in the second opening.
    • 本公开提供了一种包括形成多翅片装置的方法。 该方法包括在半导体衬底上形成图案化掩模层。 图案化掩模层包括具有第一宽度W1的第一开口和具有小于第一宽度的第二宽度W2的第二开口。 图案化掩模层限定多鳍器件区域和器件间区域,其中器件间区域与第一开口对准; 并且所述多鳍片器件区域包括与所述第二开口对准的至少一个器件内区域。 该方法还包括在半导体衬底和图案化掩模层上形成材料层,其中材料层基本上填充在第二开口中; 执行自对准的第一蚀刻工艺以去除第一开口内的材料层,使得第一开口内的半导体衬底被暴露; 执行第二蚀刻工艺以在所述第一开口内蚀刻所述半导体衬底,在所述器件间区域中形成第一沟槽; 然后执行第三蚀刻处理以去除第二开口中的材料层。