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21. 发明申请

US20220352367A1 SEMICONDUCTOR DEVICE 有权
公开(公告)号：US20220352367A1
公开(公告)日：2022-11-03
申请号：US17865246
申请日：2022-07-14
申请人： Kabushiki Kaisha Toshiba , Toshiba Electronic Devices & Storage Corporation
发明人： Toshifumi Nishiguchi
IPC分类号： H01L29/78 , H01L29/40 , H01L29/66 , H01L29/06
摘要： A semiconductor device includes a semiconductor part; first and second electrodes respectively on back and front surfaces of the semiconductor part; third and fourth electrodes inside a trench of the semiconductor part, the fourth electrode being provided between the first electrode and the third electrode; a first insulating portion electrically insulating the third electrode from the semiconductor part; a second insulating portion electrically insulating the third electrode from the second electrode; a third insulating portion electrically insulating the fourth electrode from the semiconductor part; a fourth insulating portion electrically insulating the fourth electrode from the third electrode; and a fifth insulating portion including a first portion and a second portion, the first portion being provided inside the fourth electrode, the second portion extending outward of the fourth electrode. The second portion extends from the first portion in a first direction from the first electrode toward the second electrode.

22. 发明申请

US20220093789A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
公开(公告)号：US20220093789A1
公开(公告)日：2022-03-24
申请号：US17198377
申请日：2021-03-11
申请人： Kabushiki Kaisha Toshiba , Toshiba Electronic Devices & Storage Corporation
发明人： Hiroaki Katou , Yasuhiro Kawai , Atsuro Inada , Toshifumi Nishiguchi
IPC分类号： H01L29/78 , H01L29/06 , H01L29/66
摘要： According to one embodiment, a semiconductor device includes a first electrode, first, second, and third semiconductor regions, an insulating portion, a conductive portion, a gate electrode, and a second electrode. The first semiconductor region is provided on the first electrode and electrically connected to the first electrode. The second semiconductor region is provided on the first semiconductor region. The third semiconductor region is provided on the second semiconductor region. The insulating portion are arranged with a portion of the first semiconductor region, and the second and third semiconductor regions. The conductive portion is provided inside the insulating portion and arranged with the first semiconductor region. The gate electrode is provided inside the insulating portion and arranged with the second semiconductor region. The second electrode is provided on the third semiconductor region and electrically connected to the third semiconductor region.

23. 发明申请

US20210202736A1 SEMICONDUCTOR DEVICE 有权
公开(公告)号：US20210202736A1
公开(公告)日：2021-07-01
申请号：US17005694
申请日：2020-08-28
申请人： Kabushiki Kaisha Toshiba , Toshiba Electronic Devices & Storage Corporation
发明人： Toshifumi Nishiguchi
IPC分类号： H01L29/78 , H01L29/40 , H01L29/66 , H01L29/51
摘要： A semiconductor device includes a semiconductor part; first and second electrodes respectively on back and front surfaces of the semiconductor part; third and fourth electrodes inside a trench of the semiconductor part, the fourth electrode being provided between the first electrode and the third electrode; a first insulating portion electrically insulating the third electrode from the semiconductor part; a second insulating portion electrically insulating the third electrode from the second electrode; a third insulating portion electrically insulating the fourth electrode from the semiconductor part; a fourth insulating portion electrically insulating the fourth electrode from the third electrode; and a fifth insulating portion including a first portion and a second portion, the first portion being provided inside the fourth electrode, the second portion extending outward of the fourth electrode. The second portion extends from the first portion in a first direction from the first electrode toward the second electrode.

24. 发明授权

US11018251B2 Semiconductor device 有权
公开(公告)号：US11018251B2
公开(公告)日：2021-05-25
申请号：US16543942
申请日：2019-08-19
申请人： Kabushiki Kaisha Toshiba , Toshiba Electronic Devices & Storage Corporation
发明人： Toshifumi Nishiguchi
IPC分类号： H01L29/78 , H01L29/10 , H01L29/417 , H01L29/423 , H01L29/40 , H01L29/08 , H01L29/06
摘要： A semiconductor device includes a semiconductor body; first and second electrodes provided on back and front surfaces of the semiconductor body, respectively; a third electrode provided on the front surface; and a control electrode disposed inside a trench on the front surface side, and electrically connected to the third electrode. The third electrode is electrically insulated from the semiconductor body and the second electrode. The control electrode is placed between the semiconductor body and the second electrode, and is electrically insulated from the semiconductor body and the second electrode. The control electrode continuously extends inside the trench without branching. The control electrode includes first and second portions. The first portion extends in a first direction parallel to the front surface of the semiconductor body, and the second portion extends in a second direction parallel to the front surface of the semiconductor body and crossing the first direction.

25. 发明授权

US10971621B2 Semiconductor device 有权
公开(公告)号：US10971621B2
公开(公告)日：2021-04-06
申请号：US16542784
申请日：2019-08-16
申请人： Kabushiki Kaisha Toshiba , Toshiba Electronic Devices & Storage Corporation
发明人： Hiroaki Katou , Tatsuya Nishiwaki , Kohei Oasa , Toshifumi Nishiguchi
IPC分类号： H01L29/78 , H01L29/40
摘要： A semiconductor device includes a semiconductor body, first and second electrodes, and first and second control electrodes. The first and second electrodes are provided on the semiconductor body. The first and second control electrodes each include a first portion positioned between the semiconductor body and the first electrode, a second portion positioned between the semiconductor body and the second electrode, and a third portion linked to the first and second portions. The semiconductor body includes first to fourth semiconductor layers. The second semiconductor layer is provided on the first semiconductor layer, and extends along the first to third portions. The fourth semiconductor layer is provided selectively on the second semiconductor layer, and extends along the second and third portions. The fourth semiconductor layer includes second conductivity-type impurities with a higher concentration than a concentration of second conductivity-type impurities in the second semiconductor layer.

26. 发明授权

US09947751B2 Semiconductor device and method of manufacturing the same 有权
公开(公告)号：US09947751B2
公开(公告)日：2018-04-17
申请号：US15448126
申请日：2017-03-02
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Kenya Kobayashi , Tetsuo Matsuda , Yosuke Himori , Toshifumi Nishiguchi
IPC分类号： H01L29/40 , H01L21/8234 , H01L21/311 , H01L21/265 , H01L29/06 , H01L27/088
CPC分类号： H01L29/407 , H01L21/26506 , H01L21/31111 , H01L21/823481 , H01L27/088 , H01L29/0653 , H01L29/401 , H01L29/41766 , H01L29/42368 , H01L29/42376 , H01L29/511 , H01L29/7813
摘要： A semiconductor device includes a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type provided on the first semiconductor region, a third semiconductor region of the first conductivity type provided on the second semiconductor region, a first insulating part provided in the first semiconductor region, a first electrode provided in the first semiconductor region, the first insulating part disposed between the first electrode and the first semiconductor region, a second insulating part provided on the first electrode, a gate electrode provided on the second insulating part, a gate insulating part provided between the gate electrode and the second semiconductor region, and a second electrode provided on the second semiconductor region and on the third semiconductor region, and is electrically connected to the second semiconductor region, the third semiconductor region, and the first electrode.

27. 发明授权

US09842924B2 Semiconductor device having an electrode that is in a peripheral trench region and at a same potential as a source electrode 有权
公开(公告)号：US09842924B2
公开(公告)日：2017-12-12
申请号：US15247913
申请日：2016-08-25
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Hiroaki Katou , Toshifumi Nishiguchi , Saya Shimomura , Akio Suzuki , Kentaro Ichinoseki
IPC分类号： H01L29/66 , H01L29/78 , H01L29/40 , H01L29/423 , H01L21/28
CPC分类号： H01L29/7813 , H01L21/28114 , H01L29/407 , H01L29/42376 , H01L29/4238 , H01L29/66734 , H01L29/7811
摘要： A semiconductor device includes a layer having first and second surfaces, a first region including central and peripheral portions, and a second region on the first region. First trenches extend into the first surface and terminate within the first region in the central portion. Each first trench includes a first electrode and a gate electrode over the first electrode. The first and gate electrodes are spaced from the first and second regions by a first insulating layer. A second trench extends into the first surface and terminates within the first region in the peripheral portion. The second trench includes a second electrode and a third electrode over the second electrode. The second and third electrodes are spaced from the first and second regions by a second insulating layer. A fourth electrode overlies the first insulating layer in the central portion and the second insulating layer in the peripheral portion.

28. 发明授权

US11011609B2 Method of manufacturing a semiconductor device 有权
公开(公告)号：US11011609B2
公开(公告)日：2021-05-18
申请号：US15943147
申请日：2018-04-02
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Kenya Kobayashi , Tetsuo Matsuda , Yosuke Himori , Toshifumi Nishiguchi
IPC分类号： H01L29/423 , H01L29/66 , H01L29/40 , H01L29/78 , H01L29/06 , H01L21/265 , H01L21/311 , H01L21/8234 , H01L27/088 , H01L29/51 , H01L29/417
摘要： A semiconductor device includes a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type provided on the first semiconductor region, a third semiconductor region of the first conductivity type provided on the second semiconductor region, a first insulating part provided in the first semiconductor region, a first electrode provided in the first semiconductor region, the first insulating part disposed between the first electrode and the first semiconductor region, a second insulating part provided on the first electrode, a gate electrode provided on the second insulating part, a gate insulating part provided between the gate electrode and the second semiconductor region, and a second electrode provided on the second semiconductor region and on the third semiconductor region, and is electrically connected to the second semiconductor region, the third semiconductor region, and the first electrode.

29. 发明授权

US09337283B2 Semiconductor device with field plate 有权
标题翻译：具有现场板的半导体器件
公开(公告)号：US09337283B2
公开(公告)日：2016-05-10
申请号：US14016181
申请日：2013-09-02
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Toshifumi Nishiguchi
IPC分类号： H01L29/78 , H01L29/40 , H01L29/41 , H01L21/28 , H01L29/423 , H01L29/66 , H01L21/336 , H01L29/51
CPC分类号： H01L29/407 , H01L21/28 , H01L29/401 , H01L29/4236 , H01L29/42368 , H01L29/42376 , H01L29/513 , H01L29/66734 , H01L29/7813 , H01L29/7827
摘要： A semiconductor device includes a first semiconductor layer, a second semiconductor layer of a second conductivity type formed on the first semiconductor layer, a first electrode which extends in a first direction and is surrounded by the first semiconductor layer except at one end thereof, and a first insulation film which is formed between the first semiconductor layer and the first electrode. A film thickness of the first insulation film between the other end of the first electrode in a second direction opposite to the first direction and the first semiconductor layer includes a thickness that is greater than a thickness of the first insulation film along a side surface of the first electrode. The semiconductor device also includes a second electrode which faces the second semiconductor layer, and a second insulation film which is formed between the second electrode and the second semiconductor layer.
摘要翻译：半导体器件包括第一半导体层，形成在第一半导体层上的第二导电类型的第二半导体层，第一电极，其在第一方向上延伸并且被除了其一端之外的第一半导体层包围，第一绝缘膜，形成在第一半导体层和第一电极之间。在与第一方向相反的第二方向上的第一电极的另一端与第一半导体层之间的第一绝缘膜的膜厚度包括大于沿着第一绝缘膜的侧表面的第一绝缘膜的厚度第一电极。半导体器件还包括面向第二半导体层的第二电极和形成在第二电极和第二半导体层之间的第二绝缘膜。

30. 发明授权

US10453930B2 Semiconductor device and method for manufacturing the same 有权
公开(公告)号：US10453930B2
公开(公告)日：2019-10-22
申请号：US15694836
申请日：2017-09-03
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Toshifumi Nishiguchi
IPC分类号： H01L29/40 , H01L29/78 , H01L21/28 , H01L29/66 , H01L29/423 , H01L29/08
摘要： A semiconductor device includes a first electrode, a first semiconductor layer on the first electrode, a second semiconductor layer on the first semiconductor layer, a third semiconductor layer on the second semiconductor layer, a second electrode in electrical contact with the third semiconductor layer, a gate electrode, a first insulating film between the side surface of the third semiconductor layer and the gate electrode, a field plate electrode, and a second insulating film. The field plate has an upper portion adjacent to the gate electrode and a lower portion having a width less than a width of the upper portion. The second insulating film has a first portion between the field plate electrode's upper portion and the first semiconductor layer and a second portion between the field plate electrode's lower portion and the first semiconductor layer, the second portion having a width greater than the width of the first portion.

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