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21. 发明申请

US20060092694A1 Phase change memory device and method of operating the same 有权
标题翻译：相变存储器件及其操作方法
公开(公告)号：US20060092694A1
公开(公告)日：2006-05-04
申请号：US11193413
申请日：2005-08-01
申请人： Sang-jun Choi , Jung-hyun Lee , Dong-joon Ma , Wan-jun Park , Young-soo Park
发明人： Sang-jun Choi , Jung-hyun Lee , Dong-joon Ma , Wan-jun Park , Young-soo Park
IPC分类号： G11C11/00
CPC分类号： G11C8/08 , G11C13/0004 , G11C13/0028 , G11C13/0069 , G11C2013/008
摘要： A phase change memory device and a method of operating the same are provided. The phase change memory device may include a plurality of unit cells arranged in a matrix composed of rows and columns; a plurality of program bit lines and read bit lines arranged in rows, each of the program and read bit lines having a row selection transistor formed at one end thereof; and a plurality of program word lines and read word lines arranged in columns, each of the program and read word lines having a column selection transistor formed at one end thereof. Each of the unit cells may include a phase change resistor and an exothermal resistor used to heat the phase change resistor.
摘要翻译：提供了一种相变存储器件及其操作方法。相变存储装置可以包括以行和列为单位排列成矩阵的多个单元，排列成行的多个程序位线和读取位线，每个编程和读取位线都具有形成在其一端的行选择晶体管; 以及多个编程字线和排列成列的读字字线，每个编程和读字线都具有形成在其一端的列选择晶体管。每个单电池可以包括用于加热相变电阻器的相变电阻器和放热电阻器。

22. 发明申请

US20060038221A1 Antiferromagnetic/paramagnetic resistive device, non-volatile memory and method for fabricating the same 审中-公开
标题翻译：反铁磁/顺磁电阻器件，非易失性存储器及其制造方法
公开(公告)号：US20060038221A1
公开(公告)日：2006-02-23
申请号：US11206856
申请日：2005-08-19
申请人： Jung-hyun Lee , Young-soo Park
发明人： Jung-hyun Lee , Young-soo Park
IPC分类号： H01L29/04
CPC分类号： H01L45/122 , B82Y10/00 , H01L27/2436 , H01L45/04 , H01L45/1233 , H01L45/146
摘要： A resistive multilayer device employs a first layer comprising a first material that is electrically conducting, a second layer disposed on the first layer, wherein the second layer comprises a second material having a state that is switchable between an antiferromagnetic state and a paramagnetic state by passing current through the second material, a third layer disposed on the second layer, wherein the third layer comprises a third material that is electrically conducting and a fourth dielectric layer. The second layer has a resistance in the antiferromagnetic state that is different from its resistance in the paramagnetic state, and the state of the second material is retained in an absence of applied power. The resistive multilayer device can be formed as part of a memory cell of a non-volatile memory, wherein information is stored in the memory cell based upon the state of the second material.
摘要翻译：电阻式多层器件采用包括导电的第一材料的第一层，设置在第一层上的第二层，其中第二层包括第二材料，该第二材料具有在反铁磁性状态和顺磁性状态之间可通过通过通过第二材料的电流，设置在第二层上的第三层，其中第三层包括导电的第三材料和第四介电层。第二层具有与其顺磁性状态下的电阻不同的反铁磁性状态的电阻，并且在不施加电力的情况下保持第二材料的状态。电阻性多层器件可以形成为非易失性存储器的存储单元的一部分，其中基于第二材料的状态将信息存储在存储单元中。

23. 发明申请

US20050272200A1 Bismuth titanium silicon oxide, bismuth titanium silicon oxide thin film, and method for forming the thin film 失效
公开(公告)号：US20050272200A1
公开(公告)日：2005-12-08
申请号：US11136456
申请日：2005-05-25
申请人： Young-jin Cho , Yo-sep Min , Young-soo Park , Jung-hyun Lee , June-key Lee , Yong-kyun Lee
发明人： Young-jin Cho , Yo-sep Min , Young-soo Park , Jung-hyun Lee , June-key Lee , Yong-kyun Lee
IPC分类号： C01B33/00 , C01G29/00 , C04B35/475 , C23C14/06 , C23C16/42 , H01L21/02 , H01L21/28 , H01L21/316 , H01L21/8242 , H01L27/108 , H01L29/51 , H01L21/473
CPC分类号： H01L21/28185 , C01G29/006 , C01P2002/36 , C01P2002/72 , C01P2002/77 , C01P2002/85 , C01P2002/89 , C01P2004/03 , C01P2004/04 , C01P2004/80 , C01P2006/40 , C04B35/16 , C04B35/475 , C04B35/6264 , C04B2235/3232 , C04B2235/3298 , C04B2235/3418 , C04B2235/441 , C04B2235/444 , C04B2235/658 , C04B2235/6581 , C04B2235/76 , H01L21/28194 , H01L21/31691 , H01L28/55 , H01L29/516 , H01L29/517
摘要： A bismuth titanium silicon oxide having a pyrochlore phase, a thin film formed of the bismuth titanium silicon oxide, a method for forming the bismuth-titanium-silicon oxide thin film, a capacitor and a transistor for a semiconductor device including the bismuth-titanium-silicon oxide thin film, and an electronic device employing the capacitor and/or the transistor are provided. The bismuth titanium silicon oxide has good dielectric properties and is thermally and chemically stable. The bismuth-titanium-silicon oxide thin film can be effectively used as a dielectric film of a capacitor or as a gate dielectric film of a transistor in a semiconductor device. Various electronic devices having good electrical properties can be manufactured using the capacitor and/or the transistor having the bismuth-titanium-silicon oxide film.

24. 发明授权

US08426837B2 Resistive memory device and method of manufacturing the same 有权
标题翻译：电阻式存储器件及其制造方法
公开(公告)号：US08426837B2
公开(公告)日：2013-04-23
申请号：US12073666
申请日：2008-03-07
申请人： Myoung-jae Lee , Young-soo Park , Jung-hyun Lee , Soon-won Hwang , Seok-jae Chung , Chang-soo Lee
发明人： Myoung-jae Lee , Young-soo Park , Jung-hyun Lee , Soon-won Hwang , Seok-jae Chung , Chang-soo Lee
IPC分类号： H01L29/02 , H01L29/06 , H01L47/00
CPC分类号： G11C13/0007 , G11C2213/31 , G11C2213/32 , G11C2213/72 , H01L27/2409 , H01L27/2481 , H01L45/04 , H01L45/122 , H01L45/145 , H01L45/146 , H01L45/147
摘要： Provided is a resistive memory device and a method of manufacturing the resistive memory device that includes a bottom electrode, an insulating layer that is formed on the bottom electrode and has a hole that exposes the bottom electrode, a resistance layer and an intermediate layer which are formed in the hole, a switch structure formed on a surface of the intermediate layer, and an upper electrode formed on the switch structure.
摘要翻译：提供了一种电阻式存储器件和制造该电阻式存储器件的方法，该电阻式存储器件包括底部电极，形成在底部电极上并具有暴露底部电极的孔的绝缘层，电阻层和中间层，形成在所述孔中，形成在所述中间层的表面上的开关结构和形成在所述开关结构上的上电极。

25. 发明申请

US20080164479A1 Semiconductor device including poly-si and method of manufacturing the same 有权
标题翻译：包括多晶硅的半导体器件及其制造方法
公开(公告)号：US20080164479A1
公开(公告)日：2008-07-10
申请号：US12000242
申请日：2007-12-11
申请人： Wenxu Xianyu , Jung-hyun Lee , Hyung-Jin Bae , Young-soo Park
发明人： Wenxu Xianyu , Jung-hyun Lee , Hyung-Jin Bae , Young-soo Park
IPC分类号： H01L29/04 , H01L21/20
CPC分类号： H01L21/28537 , H01L27/1021 , H01L29/861
摘要： A semiconductor device including polysilicon (poly-Si) and method of manufacturing the same are provided. The semiconductor device includes a TaNx material layer and a poly-Si layer formed on the TaNx material layer. The semiconductor device including poly-Si may be manufactured by forming a TaNx material layer and forming a poly-Si layer by depositing silicon formed on the TaNx material layer and annealing silicon.
摘要翻译：提供了包括多晶硅（poly-Si）的半导体器件及其制造方法。该半导体器件包括形成在TaN xS材料层上的TaN 材料层和多晶硅层。包括多晶硅的半导体器件可以通过形成TaN xS材料层并通过沉积形成在TaN材料层上的硅和退火形成多晶硅层来制造硅。

26. 发明申请

US20070012974A1 Method for manufacturing material layer, method for manufacturing ferroelectric capacitor using the same, ferroelectric capacitor manufactured by the same method, semiconductor memory device having ferroelectric capacitor and manufacturing method thereof 审中-公开
标题翻译：用于制造材料层的方法，使用该方法制造铁电电容器的方法，通过相同方法制造的铁电电容器，具有铁电电容器的半导体存储器件及其制造方法
公开(公告)号：US20070012974A1
公开(公告)日：2007-01-18
申请号：US11484582
申请日：2006-07-12
申请人： June-mo Koo , Bum-seok Seo , Young-soo Park , Jung-hyun Lee , Sang-min Shin , Suk-pil Kim
发明人： June-mo Koo , Bum-seok Seo , Young-soo Park , Jung-hyun Lee , Sang-min Shin , Suk-pil Kim
IPC分类号： H01L29/94
CPC分类号： H01L21/02197 , H01L21/0228 , H01L21/31691 , H01L27/11502 , H01L27/11507 , H01L28/65
摘要： Provided is a method for manufacturing a material layer capable of increasing the deposition rate of a noble metal layer on a ferroelectric layer, a method for manufacturing a ferroelectric capacitor using the same, a ferroelectric capacitor manufactured by the same method, and a semiconductor memory device having the ferroelectric capacitor and a manufacturing method thereof. According to a method for manufacturing the material layer, a ferroelectric layer is formed. The ferroelectric layer may be exposed to seed plasma, and a material layer including a source material of the seed plasma may be formed on a region of the ferroelectric layer exposed to the seed plasma.
摘要翻译：提供一种能够提高强电介质层上的贵金属层的沉积速度的材料层的制造方法，使用该材料的铁电电容器的制造方法，通过相同的方法制造的铁电电容器以及半导体存储器件具有铁电电容器及其制造方法。根据材料层的制造方法，形成铁电体层。可以将铁电层暴露于种子等离子体，并且可以在暴露于种子等离子体的铁电层的区域上形成包括种子等离子体的源材料的材料层。

27. 发明申请

US20060022236A1 Ferroelectric capacitor and ferroelectric memory with Ir-Ru alloy electrode and method of manufacturing the same 有权
公开(公告)号：US20060022236A1
公开(公告)日：2006-02-02
申请号：US10978795
申请日：2004-11-02
申请人： Sang-min Shin , Suk-pil Kim , Young-soo Park , Jung-hyun Lee , June-mo Koo
发明人： Sang-min Shin , Suk-pil Kim , Young-soo Park , Jung-hyun Lee , June-mo Koo
IPC分类号： H01L29/76
CPC分类号： H01L27/11502 , H01L28/55 , H01L28/65 , Y10T29/417
摘要： A ferroelectric capacitor comprises a first electrode comprising an alloy of Ir and Ru, a ferroelectric layer disposed on the first electrode, and a second electrode disposed on the ferroelectric layer. A ferroelectric memory comprises a substrate and a plurality of memory cells arranged on the substrate. Each memory cell comprises a first electrode comprising an alloy of Ir and Ru, a ferroelectric layer disposed on the first electrode, and a second electrode disposed on the ferroelectric layer.

28. 发明申请

US20060040444A1 Method for fabricating a three-dimensional capacitor 有权
标题翻译：制造三维电容器的方法
公开(公告)号：US20060040444A1
公开(公告)日：2006-02-23
申请号：US11207711
申请日：2005-08-22
申请人： Jung-hyun Lee , Sung-ho Park , Sang-jun Choi
发明人： Jung-hyun Lee , Sung-ho Park , Sang-jun Choi
IPC分类号： H01L21/8244
CPC分类号： H01G9/00 , H01L28/56 , H01L28/65 , H01L28/90
摘要： A capacitor and a method of fabricating the capacitor are provided herein. The capacitor can be formed by forming two or more dielectric layers and a lower electrode, wherein at least one of the two or more dielectric layers is formed before the lower electrode is formed.
摘要翻译：本文提供电容器和制造电容器的方法。可以通过形成两个或更多个电介质层和下电极来形成电容器，其中在形成下电极之前形成两个或更多个电介质层中的至少一个。

29. 发明授权

US07732851B2 Method for fabricating a three-dimensional capacitor 有权
标题翻译：制造三维电容器的方法
公开(公告)号：US07732851B2
公开(公告)日：2010-06-08
申请号：US11207711
申请日：2005-08-22
申请人： Jung-hyun Lee , Sung-ho Park , Sang-jun Choi
发明人： Jung-hyun Lee , Sung-ho Park , Sang-jun Choi
IPC分类号： H01L27/108
CPC分类号： H01G9/00 , H01L28/56 , H01L28/65 , H01L28/90
摘要： A capacitor and a method of fabricating the capacitor are provided herein. The capacitor can be formed by forming two or more dielectric layers and a lower electrode, wherein at least one of the two or more dielectric layers is formed before the lower electrode is formed.
摘要翻译：本文提供电容器和制造电容器的方法。可以通过形成两个或更多个电介质层和下电极来形成电容器，其中在形成下电极之前形成两个或更多个电介质层中的至少一个。

30. 发明授权

US07491347B2 Ti precursor, method of preparing the same, method of preparing Ti-containing thin layer by employing the Ti precursor and Ti-containing thin layer 有权
标题翻译： Ti前体，其制备方法，采用Ti前体和含Ti薄层制备含Ti薄层的方法
公开(公告)号：US07491347B2
公开(公告)日：2009-02-17
申请号：US11282486
申请日：2005-11-21
申请人： Sung-ho Park , Jung-hyun Lee
发明人： Sung-ho Park , Jung-hyun Lee
IPC分类号： H01B1/06 , H01B1/02 , C22C14/00
CPC分类号： C07F17/00 , C23C16/18 , C23C16/405
摘要： A Ti-precursor for forming a Ti-containing thin layer represented by the formula I below, a method of preparing the same, a method of preparing a Ti-containing thin layer by employing the Ti-precursor and the Ti-containing thin layer are provided: wherein X1 and X2 are independently F, Cl, Br or I; n is 0, 1, 2, 3, 4 or 5; m is 0, 1, 2, 3, 4, 5, 6 or 7; and R1 and R2 are independently a linear or branched C1-10 alkyl group. The Ti precursor for forming the Ti-containing thin layer can be deposited at a deposition temperature of approximately 150° C.˜200° C., and a Ti-containing thin layer with a high performance character can be prepared.
摘要翻译：用于形成由下式I表示的含Ti薄层的Ti前体，其制备方法，通过使用Ti前体和含Ti薄层制备含Ti薄层的方法是其中X1和X2独立地为F，Cl，Br或I; n为0，1，2，3，4或5; m为0,1,2,3,4,5,6或7; 并且R 1和R 2独立地为直链或支链C 1-10烷基。用于形成含Ti薄层的Ti前体可以在约150℃〜200℃的沉积温度下沉积，并且可以制备具有高性能特征的含钛薄层。

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