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21. 发明申请

US20050263066A1 Apparatus for electroless deposition of metals onto semiconductor substrates 有权
标题翻译：用于将金属无电沉积到半导体衬底上的装置
公开(公告)号：US20050263066A1
公开(公告)日：2005-12-01
申请号：US11043442
申请日：2005-01-26
申请人： Dmitry Lubomirsky , Arulkumar Shanmugasundram , Russell Ellwanger , Ian Pancham , Ramakrishna Cheboli , Timothy Weidman
发明人： Dmitry Lubomirsky , Arulkumar Shanmugasundram , Russell Ellwanger , Ian Pancham , Ramakrishna Cheboli , Timothy Weidman
IPC分类号： B05D3/10 , C23C18/16 , C23F1/00 , H01L21/00 , H01L21/306
CPC分类号： H01L21/67155 , C23C18/1628 , H01L21/67167 , H01L21/6719 , H01L21/6723
摘要： An electroless deposition system is provided. The system includes a processing mainframe, at least one substrate cleaning station positioned on the mainframe, and an electroless deposition station positioned on the mainframe. The electroless deposition station includes an environmentally controlled processing enclosure, a first processing station configured to clean and activate a surface of a substrate, a second processing station configured to electrolessly deposit a layer onto the surface of the substrate, and a substrate transfer shuttle positioned to transfer substrates between the first and second processing stations. The system also includes a substrate transfer robot positioned on the mainframe and configured to access an interior of the processing enclosure. The system also includes a substrate a fluid delivery system that is configured to deliver a processing fluid by use of a spraying process to a substrate mounted in the processing enclosure.
摘要翻译：提供无电沉积系统。该系统包括处理主机，位于主机上的至少一个基板清洗台和位于主机上的无电沉积站。无电沉积站包括环境受控的处理外壳，被配置为清洁和激活基板的表面的第一处理站，被配置为将层无电沉积到基板的表面上的第二处理站，以及位于在第一和第二处理站之间传送衬底。该系统还包括位于主机上并被配置为访问处理外壳内部的基板传送机器人。该系统还包括一个流体输送系统，该流体输送系统被配置成通过使用喷射过程将处理流体输送到安装在处理外壳中的基板。

22. 发明授权

US08005634B2 Copper wiring module control 失效
标题翻译：铜接线模块控制
公开(公告)号：US08005634B2
公开(公告)日：2011-08-23
申请号：US11627353
申请日：2007-01-25
申请人： Arulkumar Shanmugasundram , Suketu A. Parikh
发明人： Arulkumar Shanmugasundram , Suketu A. Parikh
IPC分类号： G01N37/00
CPC分类号： B24B37/042 , B24B49/00 , C23F3/00 , H01L21/2885 , H01L21/67253 , H01L21/67276 , H01L22/20 , H01L2924/0002 , H01L2924/00
摘要： Techniques for controlling an output property during wafer processing include forwarding feedforward and feedback information between functional units in a wafer manufacturing facility. At least some embodiments of the invention envision implementing such techniques in a copper wiring module to optimize a sheet resistance or an interconnect line resistance. Initially, a first wafer property is measured during or after processing by a plating process. Subsequently, the wafer is forwarded to a polishing process. A second wafer property is then measured during or after processing by the second process. At least one of these first and second wafer properties are used to optimize the second process. Specifically, one or more target parameters of a second process recipe are adjusted in a manner that obtains a desired final output property on the wafer by using these first and second wafer properties.
摘要翻译：用于在晶片处理期间控制输出特性的技术包括在晶片制造设备中的功能单元之间转发前馈和反馈信息。本发明的至少一些实施例设想在铜布线模块中实现这种技术以优化薄层电阻或互连线电阻。最初，通过电镀工艺在处理期间或之后测量第一晶片性质。随后，将晶片转发到抛光工艺。然后在第二工艺处理期间或之后测量第二晶片特性。这些第一和第二晶片特性中的至少一个用于优化第二过程。具体地，以通过使用这些第一和第二晶片特性在晶片上获得期望的最终输出特性的方式调整第二处理配方的一个或多个目标参数。

23. 发明授权

US07514353B2 Contact metallization scheme using a barrier layer over a silicide layer 有权
标题翻译：在硅化物层上使用阻挡层的接触金属化方案
公开(公告)号：US07514353B2
公开(公告)日：2009-04-07
申请号：US11385344
申请日：2006-03-20
申请人： Timothy W. Weidman , Kapila P. Wijekoon , Zhize Zhu , Avgerinos V. (Jerry) Gelatos , Amit Khandelwal , Arulkumar Shanmugasundram , Michael X. Yang , Fang Mei , Farhad K. Moghadam
发明人： Timothy W. Weidman , Kapila P. Wijekoon , Zhize Zhu , Avgerinos V. (Jerry) Gelatos , Amit Khandelwal , Arulkumar Shanmugasundram , Michael X. Yang , Fang Mei , Farhad K. Moghadam
IPC分类号： H01L21/4763
CPC分类号： C23C18/1678 , B82Y30/00 , C23C16/0227 , C23C16/0281 , C23C16/045 , C23C16/14 , C23C18/1608 , C23C18/1651 , C23C18/1653 , C23C18/31 , C23C18/32 , C23C18/34 , C23C18/38 , C23C18/40 , C23C18/48 , C25D5/34 , H01L21/02063 , H01L21/02074 , H01L21/28518 , H01L21/28556 , H01L21/288 , H01L21/2885 , H01L21/76814 , H01L21/76843 , H01L21/76844 , H01L21/76846 , H01L21/76847 , H01L21/76849 , H01L21/76855 , H01L21/76856 , H01L21/76861 , H01L21/76862 , H01L21/76874 , H01L21/76877 , H01L21/76879 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： Embodiments of the invention generally provide methods of filling contact level features formed in a semiconductor device by depositing a barrier layer over the contact feature and then filing the layer using an PVD, CVD, ALD, electrochemical plating process (ECP) and/or electroless deposition processes. In one embodiment, the barrier layer has a catalytically active surface that will allow the electroless deposition of a metal on the barrier layer. In one aspect, the electrolessly deposited metal is copper or a copper alloy. In one aspect, the contact level feature is filled with a copper alloy by use of an electroless deposition process. In another aspect, a copper alloy is used to from a thin conductive copper layer that is used to subsequently fill features with a copper containing material by use of an ECP, PVD, CVD, and/or ALD deposition process. In one embodiment, a portion of the barrier layer is purposely allowed to react with traces of residual oxide at the silicon junction of the contact level feature to form a low resistance connection.
摘要翻译：本发明的实施例通常提供了通过在接触特征上沉积阻挡层然后使用PVD，CVD，ALD，电化学电镀工艺（ECP）和/或无电镀沉积来填充层来填充形成在半导体器件中的接触电平特征的方法过程。在一个实施例中，阻挡层具有催化活性表面，其将允许在阻挡层上无电沉积金属。一方面，无电沉积金属是铜或铜合金。在一个方面，通过使用无电镀沉积工艺，用铜合金填充接触层的特征。另一方面，铜合金用于从导电铜层薄层中，该铜层用于随后通过使用ECP，PVD，CVD和/或ALD沉积工艺用含铜材料填充特征。在一个实施例中，阻挡层的一部分有意地被允许与触点电平特征的硅结处的痕迹的残余氧化物反应以形成低电阻连接。

24. 发明申请

US20080121276A1 SELECTIVE ELECTROLESS DEPOSITION FOR SOLAR CELLS 审中-公开
标题翻译：选择性电沉积太阳能电池
公开(公告)号：US20080121276A1
公开(公告)日：2008-05-29
申请号：US11564812
申请日：2006-11-29
申请人： Sergey Lopatin , Arulkumar Shanmugasundram , Robert Z. Bachrach , Charles Gay , David Eaglesham
发明人： Sergey Lopatin , Arulkumar Shanmugasundram , Robert Z. Bachrach , Charles Gay , David Eaglesham
IPC分类号： H01L31/00
CPC分类号： H01L31/022425 , H01L31/022433 , H01L31/02245 , Y02E10/50
摘要： A metal contact structure of a solar cell substrate includes a contact with a conductive layer or a capping layer that is formed using an electroless plating process. The contact may be disposed within a hole formed through the solar cell substrate or on a non-light-receiving surface of the solar cell substrate. The electroless plating process for the conductive layer uses a seed layer that includes an activation layer for electroless plating.
摘要翻译：太阳能电池基板的金属接触结构包括与使用无电解电镀工艺形成的导电层或覆盖层的接触。接触可以设置在通过太阳能电池基板形成的孔内或太阳能电池基板的非光接收表面上。用于导电层的化学镀处理使用包括用于无电镀的活化层的晶种层。

25. 发明申请

US20070122921A1 Copper Wiring Module Control 失效
标题翻译：铜线接线模块控制
公开(公告)号：US20070122921A1
公开(公告)日：2007-05-31
申请号：US11627353
申请日：2007-01-25
申请人： Arulkumar Shanmugasundram , Suketu Parikh
发明人： Arulkumar Shanmugasundram , Suketu Parikh
IPC分类号： H01L21/66
CPC分类号： B24B37/042 , B24B49/00 , C23F3/00 , H01L21/2885 , H01L21/67253 , H01L21/67276 , H01L22/20 , H01L2924/0002 , H01L2924/00
摘要： Techniques for controlling an output property during wafer processing include forwarding feedforward and feedback information between functional units in a wafer manufacturing facility. At least some embodiments of the invention envision implementing such techniques in a copper wiring module to optimize a sheet resistance or an interconnect line resistance. Initially, a first wafer property is measured during or after processing by a plating process. Subsequently, the wafer is forwarded to a polishing process. A second wafer property is then measured during or after processing by the second process. At least one of these first and second wafer properties are used to optimize the second process. Specifically, one or more target parameters of a second process recipe are adjusted in a manner that obtains a desired final output property on the wafer by using these first and second wafer properties.
摘要翻译：用于在晶片处理期间控制输出特性的技术包括在晶片制造设备中的功能单元之间转发前馈和反馈信息。本发明的至少一些实施例设想在铜布线模块中实现这种技术以优化薄层电阻或互连线电阻。最初，通过电镀工艺在处理期间或之后测量第一晶片性质。随后，将晶片转发到抛光工艺。然后在第二工艺处理期间或之后测量第二晶片特性。这些第一和第二晶片特性中的至少一个用于优化第二过程。具体地，以通过使用这些第一和第二晶片特性在晶片上获得期望的最终输出特性的方式调整第二处理配方的一个或多个目标参数。

26. 发明申请

US20070099422A1 Process for electroless copper deposition 审中-公开
标题翻译：无电镀铜工艺
公开(公告)号：US20070099422A1
公开(公告)日：2007-05-03
申请号：US11261409
申请日：2005-10-28
申请人： Kapila Wijekoon , Timothy Weidman , Arulkumar Shanmugasundram
发明人： Kapila Wijekoon , Timothy Weidman , Arulkumar Shanmugasundram
IPC分类号： H01L21/44
CPC分类号： H01L21/288 , C23C18/165 , C23C18/40 , C25D3/38 , H01L21/76844 , H01L21/76846 , H01L21/76862 , H01L21/76864 , H01L21/76874 , H01L21/76879 , H01L2221/1089
摘要： Embodiments of the invention provide a method for depositing a copper material on a substrate by an electroless deposition process and also provide a composition of an electroless deposition solution. In one embodiment, the copper material is deposited from an electroless copper solution that contains an additive, such as an inhibitor, to promote a bottom-up fill process. In one aspect, the field of the substrate may be maintained free of copper material or substantially free of copper material during the electroless deposition process. Prior to the electroless deposition process for forming the copper material, a barrier layer may be deposited on the substrate, and thereafter, a ruthenium layer may be deposited thereon. In one example, the copper material is formed during a bottom-up, electroless deposition process directly on the ruthenium layer. Alternatively, a seed layer may be formed on the ruthenium layer prior to depositing the copper material.
摘要翻译：本发明的实施方案提供了一种通过无电沉积方法将铜材料沉积在基底上并且还提供无电沉积溶液的组合物的方法。在一个实施例中，铜材料由含有添加剂例如抑制剂的无电解铜溶液沉积以促进自下而上的填充过程。在一个方面，在无电沉积工艺期间，衬底的场可以保持不含铜材料或基本上不含铜材料。在用于形成铜材料的无电沉积工艺之前，可以在衬底上沉积阻挡层，之后可以沉积钌层。在一个实例中，铜材料是在自下而上的无电沉积工艺中直接在钌层上形成的。或者，可以在沉积铜材料之前在钌层上形成种子层。

27. 发明申请

US20060252252A1 Electroless deposition processes and compositions for forming interconnects 审中-公开
标题翻译：用于形成互连的无电沉积工艺和组合物
公开(公告)号：US20060252252A1
公开(公告)日：2006-11-09
申请号：US11385290
申请日：2006-03-20
申请人： Zhize Zhu , Timothy Weidman , Michael Stewart , Arulkumar Shanmugasundram , Nety Krishna , Anthony Konecni
发明人： Zhize Zhu , Timothy Weidman , Michael Stewart , Arulkumar Shanmugasundram , Nety Krishna , Anthony Konecni
IPC分类号： H01L21/4763 , H01L21/44
CPC分类号： C23C18/1678 , B82Y30/00 , C23C16/0227 , C23C16/0281 , C23C16/045 , C23C16/14 , C23C18/1608 , C23C18/1651 , C23C18/1653 , C23C18/31 , C23C18/32 , C23C18/34 , C23C18/38 , C23C18/40 , C23C18/48 , C25D5/34 , H01L21/02063 , H01L21/02074 , H01L21/28518 , H01L21/28556 , H01L21/288 , H01L21/2885 , H01L21/76814 , H01L21/76843 , H01L21/76844 , H01L21/76846 , H01L21/76847 , H01L21/76849 , H01L21/76855 , H01L21/76856 , H01L21/76861 , H01L21/76862 , H01L21/76874 , H01L21/76877 , H01L21/76879 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： In one embodiment, a method for depositing a material on a substrate is provided which includes positioning a substrate containing a contact within a process chamber, exposing the substrate to at least one pretreatment step and depositing a fill the contact vias by an electroless deposition process. The pretreatment step contains multiple processes for exposing the substrate to a wet-clean solution, a hydrogen fluoride solution, a tungstate solution, a palladium activation solution, an acidic rinse solution, a complexing agent solution or combinations thereof. Generally, the HARC via contains a tungsten oxide surface and the shallow contact via may contain a tungsten silicide surface. In some example, the substrate is pretreated such that both vias are filled at substantially the same time by a nickel-containing material through an electroless deposition process.
摘要翻译：在一个实施例中，提供了一种用于在衬底上沉积材料的方法，其包括将包含接触件的衬底定位在处理室内，将衬底暴露于至少一个预处理步骤，并通过无电沉积工艺沉积接触孔。预处理步骤包含用于将基底暴露于湿清洁溶液，氟化氢溶液，钨酸盐溶液，钯活化溶液，酸性漂洗溶液，络合剂溶液或其组合的多种方法。通常，HARC通孔包含氧化钨表面，浅接触通孔可以含有硅化钨表面。在一些实例中，将基材预处理，使得通过无电镀沉积工艺通过含镍材料在几乎相同的时间填充两个通孔。

28. 发明申请

US20050260345A1 Apparatus for electroless deposition of metals onto semiconductor substrates 有权
标题翻译：用于将金属无电沉积到半导体衬底上的装置
公开(公告)号：US20050260345A1
公开(公告)日：2005-11-24
申请号：US11175251
申请日：2005-07-06
申请人： Dmitry Lubomirsky , Arulkumar Shanmugasundram , Ian Pancham
发明人： Dmitry Lubomirsky , Arulkumar Shanmugasundram , Ian Pancham
IPC分类号： B05C11/02 , B05C13/00 , B05D3/12 , C23C18/16 , C23C26/00 , C23C26/02 , H01L21/00 , H01L21/687
CPC分类号： H01L21/68728 , C23C18/1619 , C23C18/1632 , C23C26/00 , C23C26/02 , H01L21/67126 , H01L21/6719 , H01L21/68735 , H01L21/68792
摘要： An electroless deposition system and electroless deposition stations are provided. The system includes a processing mainframe, at least one substrate cleaning station positioned on the mainframe, and an electroless deposition station positioned on the mainframe. The electroless deposition station includes an environmentally controlled processing enclosure, a first processing station configured to clean and activate a surface of a substrate, a second processing station configured to electrolessly deposit a layer onto the surface of the substrate, and a substrate shuttle positioned to transfer substrates between the first and second processing stations. The electroless deposition station also includes various fluid delivery and substrate temperature controlling devices to perform a contamination free and uniform electroless deposition process.
摘要翻译：提供无电沉积系统和无电沉积站。该系统包括处理主机，位于主机上的至少一个基板清洗台和位于主机上的无电沉积站。无电沉积站包括环境控制的处理外壳，被配置为清洁和激活基板的表面的第一处理站，被配置为将层无电沉积到基板的表面上的第二处理站和定位成转移的基板梭第一和第二处理站之间的基板。无电沉积站还包括各种流体输送和基板温度控制装置，以执行无污染和均匀的无电沉积工艺。

29. 发明申请

US20050160990A1 Apparatus for electroless deposition of metals onto semiconductor substrates 有权
标题翻译：用于将金属无电沉积到半导体衬底上的装置
公开(公告)号：US20050160990A1
公开(公告)日：2005-07-28
申请号：US10996342
申请日：2004-11-22
申请人： Dmitry Lubomirsky , Arulkumar Shanmugasundram , Russell Ellwanger , Ian Pancham , Ramakrishna Cheboli
发明人： Dmitry Lubomirsky , Arulkumar Shanmugasundram , Russell Ellwanger , Ian Pancham , Ramakrishna Cheboli
IPC分类号： C23C18/16 , H01L21/00 , H01L21/288 , H01L21/687 , C23C16/00 , C23F1/00
CPC分类号： C23C18/1632 , H01L21/288 , H01L21/6715 , H01L21/67167 , H01L21/6719 , H01L21/6723 , H01L21/68742 , H01L21/68771 , H01L21/68792 , Y10S134/902
摘要： An electroless deposition system is provided. The system includes a processing mainframe, at least one substrate cleaning station positioned on the mainframe, and an electroless deposition station positioned on the mainframe. The electroless deposition station includes an environmentally controlled processing enclosure, a first processing station configured to clean and activate a surface of a substrate, a second processing station configured to electrolessly deposit a layer onto the surface of the substrate, and a substrate transfer shuttle positioned to transfer substrates between the first and second processing stations. The system also includes a substrate transfer robot positioned on the mainframe and configured to access an interior of the processing enclosure.
摘要翻译：提供无电沉积系统。该系统包括处理主机，位于主机上的至少一个基板清洗台和位于主机上的无电沉积站。无电沉积站包括环境受控的处理外壳，被配置为清洁和激活基板的表面的第一处理站，被配置为将层无电沉积到基板的表面上的第二处理站，以及位于在第一和第二处理站之间传送衬底。该系统还包括位于主机上并被配置为访问处理外壳内部的基板传送机器人。

30. 发明授权

US06887124B2 Method of polishing and cleaning substrates 失效
标题翻译：抛光和清洁基材的方法
公开(公告)号：US06887124B2
公开(公告)日：2005-05-03
申请号：US10153464
申请日：2002-05-21
申请人： Jay D. Pinson, II , Arulkumar Shanmugasundram
发明人： Jay D. Pinson, II , Arulkumar Shanmugasundram
IPC分类号： H01L21/00 , H01L21/677 , B24B1/00 , B24B49/00 , B24B51/00
CPC分类号： H01L21/67161 , H01L21/67219 , H01L21/67288 , H01L21/67766
摘要： The substrate processing system has a factory interface module, a chemical mechanical polisher, a cleaner, a particle monitor and a substrate transfer system disposed as an integrated system. The factory interface module may includes a chamber a storage station located in a chamber of the module to hold a plurality of substrates in a substantially horizontal position. The storage station may hold pad break-in wafers for pad preconditioning and/or monitor wafers for defects monitoring. The particle monitor may have a port coupled to the factory interface module.
摘要翻译：基板处理系统具有作为集成系统布置的工厂接口模块，化学机械抛光机，清洁器，粒子监视器和基板传送系统。工厂接口模块可以包括位于模块的室中的存储站的腔室，以将多个基板保持在基本上水平的位置。存储站可以保持用于垫预处理的垫片插入晶片和/或监视晶片以进行缺陷监视。粒子监视器可以具有耦合到出厂接口模块的端口。

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