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21. 发明申请

US20120153343A1 METHODS OF FORMING LIGHT EMITTING DEVICES HAVING CURRENT REDUCING STRUCTURES 有权
标题翻译：形成具有减少电流结构的发光装置的方法
公开(公告)号：US20120153343A1
公开(公告)日：2012-06-21
申请号：US13406251
申请日：2012-02-27
申请人： David Todd Emerson , Kevin Haberern , Michael John Bergmann , David B. Slater, JR. , Matthew Donofrio , John Edmond
发明人： David Todd Emerson , Kevin Haberern , Michael John Bergmann , David B. Slater, JR. , Matthew Donofrio , John Edmond
IPC分类号： H01L33/48 , H01L33/36
CPC分类号： H01L33/145 , H01L24/05 , H01L33/14 , H01L33/38 , H01L2224/49107 , H01L2933/0016
摘要： A light emitting device includes a p-type semiconductor layer, an n-type semiconductor layer, and an active region between the n-type semiconductor layer and the p-type semiconductor layer. A non-transparent feature, such as a wire bond pad, is on the p-type semiconductor layer or on the n-type semiconductor layer opposite the p-type semiconductor layer, and a reduced conductivity region is in the p-type semiconductor layer or the n-type semiconductor layer and is aligned with the non-transparent feature. The reduced conductivity region may extend from a surface of the p-type semiconductor layer opposite the n-type semiconductor layer towards the active region and/or from a surface of the n-type semiconductor layer opposite the p-type semiconductor layer towards the active region.
摘要翻译：发光器件包括p型半导体层，n型半导体层和n型半导体层和p型半导体层之间的有源区。 p型半导体层或与p型半导体层相对的n型半导体层上的非透明特性，例如引线接合焊盘，在p型半导体层中具有导电性降低的区域或n型半导体层并且与非透明特征对准。导电性降低区域可以从与n型半导体层相对的p型半导体层的表面朝向有源区域和/或从与p型半导体层相对的n型半导体层的表面朝向有源区域地区。

22. 发明授权

US08044384B2 Group III nitride based quantum well light emitting device structures with an indium containing capping structure 有权
标题翻译：具有含铟封端结构的III族氮化物基量子阱发光器件结构
公开(公告)号：US08044384B2
公开(公告)日：2011-10-25
申请号：US12698658
申请日：2010-02-02
申请人： Michael John Bergmann , David Todd Emerson
发明人： Michael John Bergmann , David Todd Emerson
IPC分类号： H01L33/00
CPC分类号： H01L33/06 , B82Y20/00 , H01L21/0237 , H01L21/02378 , H01L21/02458 , H01L21/02505 , H01L21/02507 , H01L21/0254 , H01L33/32
摘要： Group III nitride based light emitting devices and methods of fabricating Group III nitride based light emitting devices are provided. The emitting devices include an n-type Group III nitride layer, a Group III nitride based active region on the n-type Group III nitride layer and comprising at least one quantum well structure, a Group III nitride layer including indium on the active region, a p-type Group III nitride layer including aluminum on the Group III nitride layer including indium, a first contact on the n-type Group III nitride layer and a second contact on the p-type Group III nitride layer. The Group III nitride layer including indium may also include aluminum.
摘要翻译：提供III族氮化物基发光器件和制造III族氮化物基发光器件的方法。发光器件包括n型III族氮化物层，n型III族氮化物层上的III族氮化物基有源区，并且包含至少一个量子阱结构，在有源区上包括铟的III族氮化物层，在包括铟的III族氮化物层上包括铝的p型III族氮化物层，n型III族氮化物层上的第一接触和p型III族氮化物层上的第二接触。包括铟的III族氮化物层也可以包括铝。

23. 发明授权

US07791101B2 Indium gallium nitride-based ohmic contact layers for gallium nitride-based devices 有权
标题翻译：用于氮化镓基器件的基于氮化镓的基于欧姆接触层
公开(公告)号：US07791101B2
公开(公告)日：2010-09-07
申请号：US12145213
申请日：2008-06-24
申请人： Michael John Bergmann , Daniel Carleton Driscoll , David Todd Emerson
发明人： Michael John Bergmann , Daniel Carleton Driscoll , David Todd Emerson
IPC分类号： H01L29/26
CPC分类号： H01L33/0079 , H01L33/02 , H01L33/16 , H01L33/32 , H01L33/405
摘要： Light emitting devices include a gallium nitride-based epitaxial structure that includes an active light emitting region and a gallium nitride-based outer layer, for example gallium nitride. A indium nitride-based layer, such as indium gallium nitride, is provided directly on the outer layer. A reflective metal layer or a transparent conductive oxide layer is provided directly on the indium gallium nitride layer opposite the outer layer. The indium gallium nitride layer forms a direct ohmic contact with the outer layer. An ohmic metal layer need not be used. Related fabrication methods are also disclosed.
摘要翻译：发光器件包括氮化镓基外延结构，其包括活性发光区和氮化镓基外层，例如氮化镓。诸如氮化铟镓的氮化铟基层直接设置在外层上。反射金属层或透明导电氧化物层直接设置在与外层相反的氮化铟镓层上。氮化铟镓层与外层形成直接的欧姆接触。不需要使用欧姆金属层。还公开了相关的制造方法。

24. 发明授权

US07692182B2 Group III nitride based quantum well light emitting device structures with an indium containing capping structure 有权
标题翻译：具有含铟封端结构的III族氮化物基量子阱发光器件结构
公开(公告)号：US07692182B2
公开(公告)日：2010-04-06
申请号：US10899791
申请日：2004-07-27
申请人： Michael John Bergmann , David Todd Emerson
发明人： Michael John Bergmann , David Todd Emerson
IPC分类号： H01L33/00
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/04 , H01L33/06
摘要： Group III nitride based light emitting devices and methods of fabricating Group III nitride based light emitting devices are provided. The emitting devices include an n-type Group III nitride layer, a Group III nitride based active region on the n-type Group III nitride layer and comprising at least one quantum well structure, a Group III nitride layer including indium on the active region, a p-type Group III nitride layer including aluminum on the Group III nitride layer including indium, a first contact on the n-type Group III nitride layer and a second contact on the p-type Group III nitride layer. The Group III nitride layer including indium may also include aluminum.
摘要翻译：提供III族氮化物基发光器件和制造III族氮化物基发光器件的方法。发光器件包括n型III族氮化物层，n型III族氮化物层上的III族氮化物基有源区，并且包括至少一个量子阱结构，在有源区上包括铟的III族氮化物层，在包括铟的III族氮化物层上包括铝的p型III族氮化物层，n型III族氮化物层上的第一接触和p型III族氮化物层上的第二接触。包括铟的III族氮化物层也可以包括铝。

25. 发明授权

US07645342B2 Restricted radiated heating assembly for high temperature processing 有权
标题翻译：限制辐射加热组件进行高温处理
公开(公告)号：US07645342B2
公开(公告)日：2010-01-12
申请号：US11272909
申请日：2005-11-14
申请人： David Todd Emerson , Robert Allen Garner , Michael John Bergmann , Keenan Carlyle Brown , Michael Allen Pennington , Thomas Goldthwaite Coleman
发明人： David Todd Emerson , Robert Allen Garner , Michael John Bergmann , Keenan Carlyle Brown , Michael Allen Pennington , Thomas Goldthwaite Coleman
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306
CPC分类号： C23C16/46 , C30B25/105 , H01L21/67103
摘要： A vapor deposition reactor and associated method are disclosed that increase the lifetime and productivity of a filament-based resistive-heated vapor deposition system. The reactor and method provide for heating the filament while permitting the filament to move as it expands under the effect of increasing temperature while limiting the expanding movement of the filament to an amount that prevents the expanding movement of the filament from creating undesired contact with any portions of the reactor.
摘要翻译：公开了一种提高长丝基电阻加热气相沉积系统的寿命和生产率的气相沉积反应器和相关方法。反应器和方法提供加热细丝，同时允许细丝在温度升高的作用下膨胀时移动，同时将长丝的膨胀运动限制到防止细丝的膨胀运动与任何部分产生不期望的接触的量的反应器。

26. 外观设计

USD593968S1 LED chip 有权
公开(公告)号：USD593968S1
公开(公告)日：2009-06-09
申请号：US29328502
申请日：2008-11-25
申请人： John Edmond , James Ibbetson , Michael John Bergmann , Amber Christine Salter , David Todd Emerson , Ashay Chitnis , Bernd P. Keller , Kevin Haberern
设计人： John Edmond , James Ibbetson , Michael John Bergmann , Amber Christine Salter , David Todd Emerson , Ashay Chitnis , Bernd P. Keller , Kevin Haberern

27. 发明申请

US20090029493A1 Methods of Forming Light Emitting Devices with Active Layers that Extend Into Opened Pits 有权
标题翻译：形成具有延伸到开口凹坑中的有源层的发光器件的方法
公开(公告)号：US20090029493A1
公开(公告)日：2009-01-29
申请号：US12243507
申请日：2008-10-01
申请人： David Todd Emerson , Michael John Bergmann
发明人： David Todd Emerson , Michael John Bergmann
IPC分类号： H01L21/00
CPC分类号： H01L33/24 , H01L33/007 , H01L33/32
摘要： Light emitting devices include an active region comprising a plurality of layers and a pit opening region on which the active region is disposed. The pit opening region is configured to expand a size of openings of a plurality of pits to a size sufficient for the plurality of layers of the active region to extend into the pits. In some embodiments, the active region comprises a plurality of quantum wells. The pit opening region may comprise a superlattice structure. The pits may surround their corresponding dislocations and the plurality of layers may extend to the respective dislocations. At least one of the pits of the plurality of pits may originate in a layer disposed between the pit opening layer and a substrate on which the pit opening layer is provided. The active region may be a Group III nitride based active region. Methods of fabricating such devices are also provided.
摘要翻译：发光器件包括包括多个层的有源区和设置有源区的凹坑开口区。凹坑开口区域被配置为将多个凹坑的开口的尺寸扩大到足以使有源区域的多个层延伸到凹坑中的尺寸。在一些实施例中，有源区包括多个量子阱。凹坑开口区域可以包括超晶格结构。凹坑可以围绕其相应的位错，并且多个层可以延伸到相应的位错。多个凹坑中的凹坑中的至少一个凹坑可以起源于设置在凹坑开口层和设置凹坑开口层的基底之间的层。有源区可以是基于III族氮化物的有源区。还提供了制造这种装置的方法。

28. 发明授权

US06734033B2 Ultraviolet light emitting diode 有权
标题翻译：紫外发光二极管
公开(公告)号：US06734033B2
公开(公告)日：2004-05-11
申请号：US10458051
申请日：2003-06-10
申请人： David Todd Emerson , Amber Christine Abare , Michael John Bergmann
发明人： David Todd Emerson , Amber Christine Abare , Michael John Bergmann
IPC分类号： H01L2100
CPC分类号： H01L33/04 , H01L33/007 , H01L33/12 , H01L33/32 , Y10S438/93
摘要： A light emitting diode is disclosed. The diode includes a silicon carbide substrate having a first conductivity type, a first gallium nitride layer above the SiC substrate having the same conductivity type as the substrate, a superlattice on the GaN layer formed of a plurality of repeating sets of alternating layers selected from among GaN, InGaN, and AlInGaN, a second GaN layer on the superlattice having the same conductivity type as the first GaN layer, a multiple quantum well on the second GaN layer, a third GaN layer on the multiple quantum well, a contact structure on the third GaN layer having the opposite conductivity type from the substrate and the first GaN layer, an ohmic contact to the SiC substrate, and an ohmic contact to the contact structure.
摘要翻译：公开了一种发光二极管。二极管包括具有第一导电类型的碳化硅衬底，在SiC衬底之上的与衬底具有相同导电类型的第一氮化镓层，在由多个重复的交替层组成的GaN层上形成的超晶格， GaN，InGaN和AlInGaN，具有与第一GaN层相同的导电类型的超晶格上的第二GaN层，第二GaN层上的多量子阱，多量子阱上的第三GaN层，与衬底和第一GaN层具有相反导电类型的第三GaN层，与SiC衬底的欧姆接触以及与接触结构的欧姆接触。

29. 发明授权

US06664560B2 Ultraviolet light emitting diode 失效
标题翻译：紫外发光二极管
公开(公告)号：US06664560B2
公开(公告)日：2003-12-16
申请号：US10170577
申请日：2002-06-12
申请人： David Todd Emerson , Amber Christine Abare , Michael John Bergmann
发明人： David Todd Emerson , Amber Christine Abare , Michael John Bergmann
IPC分类号： H01L2906
CPC分类号： H01L33/04 , H01L33/007 , H01L33/12 , H01L33/32 , Y10S438/93
摘要： A light emitting diode is disclosed. The diode includes a silicon carbide substrate having a first conductivity type, a first gallium nitride layer above the SiC substrate having the same conductivity type as the substrate, a superlattice on the GaN layer formed of a plurality of repeating sets of alternating layers selected from among GaN, InGaN, and AlInGaN, a second GaN layer on the superlattice having the same conductivity type as the first GaN layer, a multiple quantum well on the second GaN layer, a third GaN layer on the multiple quantum well, a contact structure on the third GaN layer having the opposite conductivity type from the substrate and the first GaN layer, an ohmic contact to the SiC substrate, and an ohmic contact to the contact structure.
摘要翻译：公开了一种发光二极管。二极管包括具有第一导电类型的碳化硅衬底，在SiC衬底之上的与衬底具有相同导电类型的第一氮化镓层，在由多个重复的交替层组成的GaN层上形成的超晶格， GaN，InGaN和AlInGaN，具有与第一GaN层相同的导电类型的超晶格上的第二GaN层，第二GaN层上的多量子阱，多量子阱上的第三GaN层，与衬底和第一GaN层具有相反导电类型的第三GaN层，与SiC衬底的欧姆接触以及与接触结构的欧姆接触。

30. 发明授权

US08772757B2 Deep ultraviolet light emitting devices and methods of fabricating deep ultraviolet light emitting devices 有权
标题翻译：深紫外光发射装置及其制造深紫外光发射装置的方法
公开(公告)号：US08772757B2
公开(公告)日：2014-07-08
申请号：US12030539
申请日：2008-02-13
申请人： David Todd Emerson , Michael John Bergmann , Amber Abare , Kevin Haberern
发明人： David Todd Emerson , Michael John Bergmann , Amber Abare , Kevin Haberern
IPC分类号： H01L29/06
CPC分类号： H01L33/12 , B82Y20/00 , H01L33/06 , H01L33/32
摘要： Light emitting devices and methods of fabricating light emitting devices that emit at wavelengths less than 360 nm with wall plug efficiencies of at least than 4% are provided. Wall plug efficiencies may be at least 5% or at least 6%. Light emitting devices and methods of fabricating light emitting devices that emit at wavelengths less than 345 nm with wall plug efficiencies of at least than 2% are also provided. Light emitting devices and methods of fabricating light emitting devices that emit at wavelengths less than 330 nm with wall plug efficiencies of at least than 0.4% are provided. Light emitting devices and methods of fabricating light emitting devices having a peak output wavelength of not greater than 360 nm and an output power of at least 5 mW, having a peak output wavelength of 345 nm or less and an output power of at least 3 mW and/or a peak output wavelength of 330 nm or less and an output power of at least 0.3 mW at a current density of less than about 0.35 μA/μm2 are also provided. The semiconductor light emitting devices may have a direct current lifetime of at least 100 hours, at least 500 hours or at least 1000 hours.
摘要翻译：提供发光装置和制造发射波长小于360nm，壁塞效率至少为4％的发光装置的方法。墙壁插头效率可以至少为5％或至少为6％。还提供了发光装置和制造发射波长小于345nm并具有至少2％壁塞效率的发光装置的方法。提供发光装置和制造发射波长小于330nm，壁塞效率至少为0.4％的发光器件的方法。具有峰值输出波长不大于360nm和输出功率至少为5mW的发光器件的发光器件和方法，具有345nm或更小的峰值输出波长和至少3mW的输出功率还提供了在小于约0.35μA/μm2的电流密度下的330nm或更小的峰值输出波长和至少0.3mW的输出功率。半导体发光器件可以具有至少100小时，至少500小时或至少1000小时的直流电寿命。

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