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21. 发明申请

US20110094586A1 SOLAR CELL AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：太阳能电池及其制造方法
公开(公告)号：US20110094586A1
公开(公告)日：2011-04-28
申请号：US12913259
申请日：2010-10-27
申请人： Juhwa CHEONG , Junyong Ahn , Youngsung Yang , Seongeun Lee
发明人： Juhwa CHEONG , Junyong Ahn , Youngsung Yang , Seongeun Lee
IPC分类号： H01L31/0232
CPC分类号： H01L31/02167 , H01L31/02168 , H01L31/022425 , H01L31/068 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A solar cell and a method for manufacturing the same are discussed. The solar cell includes a substrate of a first conductive type, an emitter portion that has a second conductive type opposite the first conductive type and forms a p-n junction along with the substrate, a first anti-reflection layer that is positioned on the emitter portion and has a thickness of about 5 nm to 35 nm, a second anti-reflection layer positioned on the first anti-reflection layer, a first electrode electrically connected to the emitter portion, and a second electrode electrically connected to the substrate.
摘要翻译：讨论太阳能电池及其制造方法。太阳能电池包括第一导电类型的衬底，具有与第一导电类型相反的第二导电类型并与衬底一起形成pn结的发射极部分，位于发射极部分上的第一抗反射层和具有约5nm至35nm的厚度，位于第一抗反射层上的第二抗反射层，与发射极部分电连接的第一电极和与该基板电连接的第二电极。

22. 发明申请

US20110023960A1 SOLAR CELL AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：太阳能电池及其制造方法
公开(公告)号：US20110023960A1
公开(公告)日：2011-02-03
申请号：US12850459
申请日：2010-08-04
申请人： Seongeun Lee , Hyunjung Park
发明人： Seongeun Lee , Hyunjung Park
IPC分类号： H01L31/0216 , H01L31/0232
CPC分类号： H01L31/02168 , H01L31/068 , H01L31/072 , Y02E10/547
摘要： A solar cell includes a p-n structure having a first conductive semiconductor substrate, a second conductive semiconductor layer formed on the first conductive semiconductor substrate and having a conduction opposite to the first conductive semiconductor substrate, and a p-n junction formed at an interface between the first and second conductive semiconductor substrate/layer; a first anti-reflection film formed on the second conductive semiconductor layer and composed of SiNx:H thin film with 40-100 nm thickness; a second anti-reflection film formed on the first anti-reflection film and composed of silicon oxy-nitride; a front electrode formed on the second anti-reflection film in a predetermined pattern and connected to the second conductive semiconductor layer through the first and second anti-reflection films; and a rear electrode formed at an opposite side to the front electrode with the first conductive semiconductor substrate being interposed therebetween to be connected to the first conductive semiconductor substrate.
摘要翻译：太阳能电池包括具有第一导电半导体衬底的pn结构，形成在第一导电半导体衬底上并具有与第一导电半导体衬底相反的导电的第二导电半导体层，以及形成在第一和第二导电半导体衬底之间的界面处的pn结，第二导电半导体衬底/层; 形成在第二导电半导体层上并由厚度为40-100nm的SiNx：H薄膜构成的第一抗反射膜; 形成在第一防反射膜上并由氮氧化硅构成的第二抗反射膜; 形成在所述第二防反射膜上的预定图案的前电极，通过所述第一和第二防反射膜与所述第二导电半导体层连接; 以及形成在与前电极相反一侧的后电极，其间插入有第一导电半导体衬底以连接到第一导电半导体衬底。

23. 发明申请

US20100018573A1 METHOD FOR MANUFACTURING SOLAR CELL AND SOLAR CELL MANUFACTURED BY THE METHOD 有权
标题翻译：方法制造太阳能电池和太阳能电池的方法
公开(公告)号：US20100018573A1
公开(公告)日：2010-01-28
申请号：US12515895
申请日：2007-10-25
申请人： Seongeun Lee
发明人： Seongeun Lee
IPC分类号： H01L31/00 , H01L21/28
CPC分类号： H01L31/1804 , H01L31/022425 , H01L31/0236 , H01L31/068 , H01L31/182 , Y02E10/546 , Y02E10/547 , Y02P70/521
摘要： A method for manufacturing a solar cell includes (S1) forming, on a first conductive semiconductor substrate, a second conductive semiconductor layer having an opposite conduction type by means of ion implantation to form a pn junction in an interface thereof; (S2) treating an alkali solution on the second conductive semiconductor layer for texturing; (S3) forming an antireflection film on the textured second conductive semiconductor layer; (S4) forming a front electrode to pass through a partial region of the antireflection film and connect to a part of the second conductive semiconductor layer; and (S5) forming a rear electrode at an opposite side to the front electrode with the first conductive semiconductor substrate being interposed therebetween such that the rear electrode is connected to the first conductive semiconductor substrate. The second conductive semiconductor layer, namely an emitter layer, functions as an etch stop layer
摘要翻译：一种太阳能电池的制造方法，包括：（S1）在第一导电半导体基板上，通过离子注入形成具有相反导电型的第二导电半导体层，以在其界面形成pn结; （S2）处理所述第二导电半导体层上的碱溶液以进行纹理化; （S3）在纹理化的第二导电半导体层上形成抗反射膜; （S4）形成前电极以穿过防反射膜的部分区域并连接到第二导电半导体层的一部分; 以及（S5）在与所述前电极相反的一侧形成后电极，其中所述第一导电半导体衬底插入其间，使得所述后电极连接到所述第一导电半导体衬底。第二导电半导体层，即发射极层，用作蚀刻停止层

24. 发明授权

US08927313B2 Method for manufacturing a solar cell 有权
标题翻译：制造太阳能电池的方法
公开(公告)号：US08927313B2
公开(公告)日：2015-01-06
申请号：US13469832
申请日：2012-05-11
申请人： Kyoungsoo Lee , Seongeun Lee
发明人： Kyoungsoo Lee , Seongeun Lee
IPC分类号： H01L31/18
CPC分类号： H01L31/0684 , H01L31/068 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： In a method for manufacturing a solar cell where the solar cell includes a dopant layer having a first portion of a first resistance and a second portion of a second resistance lower than the first resistance, the method includes ion-implanting a dopant into the semiconductor substrate to form the dopant layer; firstly activating by heating the second portion and activating the dopant at the second portion; and secondly activating by heating the first portion and the second portion and activating the dopant at the first portion and the second portion.
摘要翻译：在制造太阳能电池的方法中，所述太阳能电池包括具有第一电阻的第一部分和低于第一电阻的第二电阻的第二部分的掺杂剂层，所述方法包括将掺杂剂离子注入到所述半导体衬底中以形成掺杂剂层; 首先通过加热第二部分并在第二部分激活掺杂剂来激活; 其次通过加热第一部分和第二部分并在第一部分和第二部分激活掺杂剂来激活。

25. 发明授权

US08642372B2 Solar cell and method for manufacturing the same 有权
标题翻译：太阳能电池及其制造方法
公开(公告)号：US08642372B2
公开(公告)日：2014-02-04
申请号：US12489131
申请日：2009-06-22
申请人： Juhwa Cheong , Hyunjung Park , Junyong Ahn , Seongeun Lee , Jiweon Jeong
发明人： Juhwa Cheong , Hyunjung Park , Junyong Ahn , Seongeun Lee , Jiweon Jeong
IPC分类号： H01L21/00 , H01L31/00
CPC分类号： H01L31/02363 , H01L31/02168 , H01L31/18 , Y02E10/50 , Y02E10/52
摘要： A method of manufacturing a solar cell includes forming jagged portions non-uniformly on a surface of a substrate, forming a first type semiconductor and a second type semiconductor in the substrate, forming a first electrode to contact the first type semiconductor, and forming a second electrode to contact the second type semiconductor. An etchant used in a wet etching process in manufacturing the solar cell includes about 0.5 wt % to 10 wt % of HF, about 30 wt % to 60 wt % of HNO3, and up to about 30 wt % of acetic acid based on total weight of the etchant.
摘要翻译：太阳能电池的制造方法包括在基板的表面上不均匀地形成锯齿状的部分，在基板上形成第一型半导体和第二型半导体，形成与第一型半导体接触的第一电极，形成第二电极接触第二类型半导体。在制造太阳能电池的湿式蚀刻工艺中使用的蚀刻剂包括约0.5重量％至10重量％的HF，约30重量％至60重量％的HNO 3和至多约30重量％的基于总重量的乙酸的蚀刻剂。

26. 发明授权

US07838761B2 Method for manufacturing solar cell and solar cell manufactured by the method 有权
标题翻译：通过该方法制造太阳能电池和太阳能电池的方法
公开(公告)号：US07838761B2
公开(公告)日：2010-11-23
申请号：US12515895
申请日：2007-10-25
申请人： Seongeun Lee
发明人： Seongeun Lee
IPC分类号： H01L31/00 , H01L21/00
CPC分类号： H01L31/1804 , H01L31/022425 , H01L31/0236 , H01L31/068 , H01L31/182 , Y02E10/546 , Y02E10/547 , Y02P70/521
摘要： A method for manufacturing a solar cell includes (S1) forming, on a first conductive semiconductor substrate, a second conductive semiconductor layer having an opposite conduction type by means of ion implantation to form a pn junction in an interface thereof; (S2) treating an alkali solution on the second conductive semiconductor layer for texturing; (S3) forming an antireflection film on the textured second conductive semiconductor layer; (S4) forming a front electrode to pass through a partial region of the antireflection film and connect to a part of the second conductive semiconductor layer; and (S5) forming a rear electrode at an opposite side to the front electrode with the first conductive semiconductor substrate being interposed therebetween such that the rear electrode is connected to the first conductive semiconductor substrate. The second conductive semiconductor layer, namely an emitter layer, functions as an etch stop layer.
摘要翻译：一种太阳能电池的制造方法，包括：（S1）在第一导电半导体基板上，通过离子注入形成具有相反导电型的第二导电半导体层，以在其界面形成pn结; （S2）处理所述第二导电半导体层上的碱溶液以进行纹理化; （S3）在纹理化的第二导电半导体层上形成抗反射膜; （S4）形成前电极以穿过防反射膜的部分区域并连接到第二导电半导体层的一部分; 以及（S5）在与所述前电极相反的一侧形成后电极，其中所述第一导电半导体衬底插入其间，使得所述后电极连接到所述第一导电半导体衬底。第二导电半导体层，即发射极层，用作蚀刻停止层。

27. 发明申请

US20100071762A1 SOLAR CELL AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：太阳能电池及其制造方法
公开(公告)号：US20100071762A1
公开(公告)日：2010-03-25
申请号：US12515660
申请日：2007-06-20
申请人： Seongeun Lee , Hyunjung Park
发明人： Seongeun Lee , Hyunjung Park
IPC分类号： H01L31/0216 , H01L31/18
CPC分类号： H01L31/02168 , H01L31/068 , H01L31/072 , Y02E10/547
摘要： A solar cell includes a p-n structure having a first conductive semiconductor substrate, a second conductive semiconductor layer formed on the first conductive semiconductor substrate and having a conduction opposite to the first conductive semiconductor substrate, and a p-n junction formed at an interface between the first and second conductive semiconductor substrate/layer; a first anti-reflection film formed on the second conductive semiconductor layer and composed of SiNx:H thin film with 40-100 nm thickness; a second anti-reflection film formed on the first anti-reflection film and composed of silicon oxy-nitride; a front electrode formed on the second anti-reflection film in a predetermined pattern and connected to the second conductive semiconductor layer through the first and second anti-reflection films; and a rear electrode formed at an opposite side to the front electrode with the first conductive semiconductor substrate being interposed therebetween to be connected to the first conductive semiconductor substrate.
摘要翻译：太阳能电池包括具有第一导电半导体衬底的pn结构，形成在第一导电半导体衬底上并具有与第一导电半导体衬底相反的导电的第二导电半导体层，以及形成在第一和第二导电半导体衬底之间的界面处的pn结，第二导电半导体衬底/层; 形成在第二导电半导体层上并由厚度为40-100nm的SiNx：H薄膜构成的第一抗反射膜; 形成在第一防反射膜上并由氮氧化硅构成的第二抗反射膜; 形成在所述第二防反射膜上的预定图案的前电极，通过所述第一和第二防反射膜与所述第二导电半导体层连接; 以及形成在与前电极相反一侧的后电极，其间插入有第一导电半导体衬底以连接到第一导电半导体衬底。

28. 发明授权

US09029185B2 Method for manufacturing solar cell 有权
标题翻译：制造太阳能电池的方法
公开(公告)号：US09029185B2
公开(公告)日：2015-05-12
申请号：US13469824
申请日：2012-05-11
申请人： Kyoungsoo Lee , Seongeun Lee
发明人： Kyoungsoo Lee , Seongeun Lee
IPC分类号： H01L21/00 , H01L31/18 , H01L25/04
CPC分类号： H01L31/0376 , H01L25/042 , H01L27/142 , H01L31/022425 , H01L31/04 , H01L31/06 , H01L31/068 , H01L31/0682 , H01L31/18 , H01L31/1804 , H01L31/1876 , H01L2924/0002 , Y02E10/547 , Y02P70/521 , H01L2924/00
摘要： A method for manufacturing a solar cell according to an embodiment of the present invention includes preparing a semiconductor substrate having a first conductivity type dopant; ion-implanting a pre-amorphization elements into a front surface of the semiconductor substrate to form an amorphous layer; and forming an emitter layer by ion-implanting second conductivity type dopant into the front surface of the semiconductor substrate. The method then further includes heat-treating the layers to activate the second conductivity type dopant. The method further includes forming a back surface field layer at a back surface of the semiconductor substrate by ion-implanting a first conductivity type dopant.
摘要翻译：根据本发明实施例的太阳能电池的制造方法包括制备具有第一导电型掺杂剂的半导体衬底; 将前非晶化元件离子注入半导体衬底的前表面以形成非晶层; 以及通过将第二导电型掺杂剂离子注入到所述半导体衬底的前表面中形成发射极层。然后该方法还包括热处理层以激活第二导电型掺杂剂。该方法还包括通过离子注入第一导电型掺杂剂在半导体衬底的背面形成背表面场层。

29. 发明授权

US08426723B2 Solar cell 有权
标题翻译：太阳能电池
公开(公告)号：US08426723B2
公开(公告)日：2013-04-23
申请号：US12899249
申请日：2010-10-06
申请人： Seongeun Lee
发明人： Seongeun Lee
IPC分类号： H01L31/00 , H01L21/00
CPC分类号： H01L31/1804 , H01L31/022425 , H01L31/0236 , H01L31/068 , H01L31/182 , Y02E10/546 , Y02E10/547 , Y02P70/521
摘要： A method for manufacturing a solar cell includes (S1) forming, on a first conductive semiconductor substrate, a second conductive semiconductor layer having an opposite conduction type by means of ion implantation to form a pn junction in an interface thereof; (S2) treating an alkali solution on the second conductive semiconductor layer for texturing; (S3) forming an antireflection film on the textured second conductive semiconductor layer; (S4) forming a front electrode to pass through a partial region of the antireflection film and connect to a part of the second conductive semiconductor layer; and (S5) forming a rear electrode at an opposite side to the front electrode with the first conductive semiconductor substrate being interposed therebetween such that the rear electrode is connected to the first conductive semiconductor substrate. The second conductive semiconductor layer, namely an emitter layer, functions as an etch stop layer.
摘要翻译：一种太阳能电池的制造方法，包括：（S1）在第一导电半导体基板上，通过离子注入形成具有相反导电型的第二导电半导体层，以在其界面形成pn结; （S2）处理所述第二导电半导体层上的碱溶液以进行纹理化; （S3）在纹理化的第二导电半导体层上形成抗反射膜; （S4）形成前电极以穿过防反射膜的部分区域并连接到第二导电半导体层的一部分; 以及（S5）在与所述前电极相反的一侧形成后电极，其中所述第一导电半导体衬底插入其间，使得所述后电极连接到所述第一导电半导体衬底。第二导电半导体层，即发射极层，用作蚀刻停止层。

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