专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

21. 发明授权

US08809895B2 Light emitting device and method of fabricating the same 有权
标题翻译：发光元件及其制造方法
公开(公告)号：US08809895B2
公开(公告)日：2014-08-19
申请号：US13175549
申请日：2011-07-01
申请人： Kwang Ki Choi , Hwan Hee Jeong , Sang Youl Lee , June O Song , Ji hyung Moon , Se Yeon Jung , Tae-Yeon Seong
发明人： Kwang Ki Choi , Hwan Hee Jeong , Sang Youl Lee , June O Song , Ji hyung Moon , Se Yeon Jung , Tae-Yeon Seong
IPC分类号： H01L33/14 , H01L33/46 , H01L33/64
CPC分类号： H01L33/14 , H01L33/16 , H01L33/42 , H01L2224/48091 , H01L2224/48247 , H01L2924/00014
摘要： Provided are a light emitting device and a method of fabricating the same. The light emitting device includes a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer, the active layer being formed of a semiconductor material. Also, the light emitting device further includes a current spreading layer comprising a plurality of carbon nanotube bundles physically connected to each other on one of the first and second conductive type semiconductor layers.
摘要翻译：提供一种发光器件及其制造方法。发光器件包括第一导电类型半导体层，第二导电类型半导体层和在第一导电类型半导体层和第二导电类型半导体层之间的有源层，有源层由半导体材料形成。此外，发光器件还包括电流扩展层，其包括在第一和第二导电类型半导体层中的一个上彼此物理连接的多个碳纳米管束。

22. 发明授权

US08643040B2 Light emitting device and light emitting device package thereof 有权
标题翻译：发光器件及其发光器件封装
公开(公告)号：US08643040B2
公开(公告)日：2014-02-04
申请号：US13102478
申请日：2011-05-06
申请人： Sang Youl Lee , Ji Hyung Moon , June O Song , Kwang Ki Choi , Chung Song Kim , Hwan Hee Jeong
发明人： Sang Youl Lee , Ji Hyung Moon , June O Song , Kwang Ki Choi , Chung Song Kim , Hwan Hee Jeong
IPC分类号： H01L33/00
CPC分类号： H01L33/38 , H01L33/0079 , H01L33/20 , H01L33/382 , H01L33/385 , H01L33/44 , H01L33/62 , H01L2924/0002 , H01L2933/0016 , H01L2924/00
摘要： A light emitting device includes a light emitting structure including a second conduction type semiconductor layer, an active layer, and a first conduction type semiconductor layer, a second electrode layer arranged under the light emitting structure, a first electrode layer having at least portion extending to contact the first conduction type semiconductor layer passing the second conduction type semiconductor layer and the active layer, and an insulating layer arranged between the second electrode layer and the first electrode layer, between the second conduction type semiconductor layer and the first electrode layer, and between the active layer and the first electrode layer, wherein said at least one portion of the first electrode layer contacting the first conduction type semiconductor layer has a roughness.
摘要翻译：发光器件包括：发光结构，包括第二导电类型半导体层，有源层和第一导电类型半导体层;布置在发光结构下方的第二电极层;第一电极层，至少部分延伸到接触通过第二导电类型半导体层和有源层的第一导电类型半导体层，以及布置在第二电极层和第一电极层之间，在第二导电类型半导体层和第一电极层之间以及介于所述有源层和所述第一电极层，其中所述与所述第一导电型半导体层接触的所述第一电极层的所述至少一部分具有粗糙度。

23. 发明授权

US08513679B2 Semiconductor light-emitting device and method for fabricating the same 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US08513679B2
公开(公告)日：2013-08-20
申请号：US12797927
申请日：2010-06-10
申请人： Hwan Hee Jeong , Sang Youl Lee , June O Song , Ji Hyung Moon , Kwang Ki Choi
发明人： Hwan Hee Jeong , Sang Youl Lee , June O Song , Ji Hyung Moon , Kwang Ki Choi
IPC分类号： H01L27/15
CPC分类号： H01L33/44 , H01L33/0079 , H01L33/22 , H01L33/405 , H01L2224/48091 , H01L2224/48247 , H01L2933/0091 , H01L2924/00014
摘要： A semiconductor light-emitting device is provided. The semiconductor light-emitting device may include a light-emitting structure, an electrode, a reflective layer, a conductive support member, and a channel layer. The light-emitting structure may include a plurality of compound semiconductor layers. The electrode may be disposed on the compound semiconductor layer. The reflective layer may be disposed under the compound semiconductor layer. The conductive support member may be disposed under the reflective layer. The channel layer may be disposed along a bottom edge of the compound semiconductor layer.
摘要翻译：提供了一种半导体发光器件。半导体发光器件可以包括发光结构，电极，反射层，导电支撑构件和沟道层。发光结构可以包括多个化合物半导体层。电极可以设置在化合物半导体层上。反射层可以设置在化合物半导体层之下。导电支撑构件可以设置在反射层下方。沟道层可以沿着化合物半导体层的底部边缘设置。

24. 发明授权

US08039860B2 Light emitting device, light emitting device package and lighting system 有权
标题翻译：发光器件，发光器件封装和照明系统
公开(公告)号：US08039860B2
公开(公告)日：2011-10-18
申请号：US13024874
申请日：2011-02-10
申请人： Ji Hyung Moon , Hwan Hee Jeong , Sang Youl Lee , June O Song , Kwang Ki Choi
发明人： Ji Hyung Moon , Hwan Hee Jeong , Sang Youl Lee , June O Song , Kwang Ki Choi
IPC分类号： H01L33/00
CPC分类号： H01L33/382 , H01L33/385 , H01L33/486 , H01L33/62 , H01L33/64 , H01L2924/0002 , H01L2924/00
摘要： Disclosed are a light emitting device and a light emitting device package having the same. The light emitting device includes a light emitting structure layer including a first conductive type semiconductor layer, an active layer under the first conductive type semiconductor layer, and a second conductive type semiconductor layer under the active layer; a conductive layer under the second conductive type semiconductor layer; an adhesive layer under the conductive layer; a support member under the adhesive layer; a contact electrode connected to the first conductive type semiconductor layer; a first lead electrode under the support member; a first electrode connecting the contact electrode to the first lead electrode on a first region of the support member; a second electrode connected to at least one of the conductive layer and the adhesive layer on a second region of the support member; a second lead electrode connected to the second electrode under the support member; and a first insulating layer between the contact electrode and the light emitting structure layer.
摘要翻译：公开了一种发光器件和具有该发光器件的发光器件封装。发光器件包括发光结构层，该发光结构层包括第一导电类型半导体层，第一导电类型半导体层下面的有源层和有源层下面的第二导电类型半导体层; 第二导电类型半导体层下的导电层; 导电层下方的粘合剂层; 在粘合剂层下面的支撑构件; 连接到所述第一导电类型半导体层的接触电极; 在支撑构件下方的第一引线电极; 在所述支撑构件的第一区域上将所述接触电极连接到所述第一引线电极的第一电极; 在所述支撑构件的第二区域上连接到所述导电层和所述粘合剂层中的至少一个的第二电极; 第二引线电极，其在所述支撑构件的下方连接到所述第二电极; 以及在所述接触电极和所述发光结构层之间的第一绝缘层。

25. 发明申请

US20110215352A1 LIGHT EMITTING DEVICE, METHOD OF MANUFACTURING THE SAME, LIGHT EMITTING DEVICE PACKAGE 有权
标题翻译：发光装置，其制造方法，发光装置包装
公开(公告)号：US20110215352A1
公开(公告)日：2011-09-08
申请号：US13040984
申请日：2011-03-04
申请人： Hwan Hee Jeong , Sang Youl Lee , Ji Hyung Moon , June O Song , Kwang Ki Choi , Dae Sung Kang
发明人： Hwan Hee Jeong , Sang Youl Lee , Ji Hyung Moon , June O Song , Kwang Ki Choi , Dae Sung Kang
IPC分类号： H01L33/32
CPC分类号： H01L33/0079 , H01L33/12 , H01L33/20 , H01L33/32 , H01L33/36 , H01L33/44 , H01L33/62 , H01L2224/48091 , H01L2224/48247 , H01L2924/12032 , H01L2933/0058 , H01L2924/00014 , H01L2924/00
摘要： Disclosed is a method of manufacturing a light emitting device. The light emitting device includes a nitride semiconductor layer, an electrode on the nitride semiconductor layer, a light emitting structure including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer under the nitride semiconductor layer, and a conductive layer under the light emitting structure. The nitride semiconductor layer has band gap energy lower than band gap energy of the first conductive type semiconductor layer.
摘要翻译：公开了一种制造发光器件的方法。发光器件包括氮化物半导体层，氮化物半导体层上的电极，在氮化物半导体层下面的包括第一导电类型半导体层，有源层和第二导电类型半导体层的发光结构，以及导电层下发光结构。氮化物半导体层具有比第一导电型半导体层的带隙能量低的带隙能量。

26. 发明授权

US08269226B2 Light emitting device, and light emitting device package 有权
标题翻译：发光器件和发光器件封装
公开(公告)号：US08269226B2
公开(公告)日：2012-09-18
申请号：US13215397
申请日：2011-08-23
申请人： Ji Hyung Moon , Sang Youl Lee , Chung song Kim , Kwang Ki Choi , June O Song
发明人： Ji Hyung Moon , Sang Youl Lee , Chung song Kim , Kwang Ki Choi , June O Song
IPC分类号： H01L27/15
CPC分类号： H01L33/44 , H01L33/20 , H01L33/382 , H01L2224/48091 , H01L2924/181 , H01L2924/00014 , H01L2924/00012
摘要： A light emitting device including a light emitting structure including a second conductive type semiconductor layer, an active layer, and a first conductive type semiconductor layer, and a first protective layer disposed on a side of the light emitting structure, wherein the first protective layer overlaps with the first conductive type semiconductor layer in a vertical direction.
摘要翻译：一种包括发光结构的发光器件，包括第二导电类型半导体层，有源层和第一导电类型半导体层，以及设置在发光结构侧的第一保护层，其中第一保护层重叠第一导电类型半导体层在垂直方向上。

27. 发明申请

US20120138969A1 LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE, AND LIGHTING DEVICE WITH THE SAME 有权
标题翻译：发光装置，发光装置包装，以及具有该发光装置的照明装置
公开(公告)号：US20120138969A1
公开(公告)日：2012-06-07
申请号：US13242345
申请日：2011-09-23
申请人： Ji Hyung Moon , Sang Youl Lee , Chung song Kim , June O Song , Kwang Ki Choi
发明人： Ji Hyung Moon , Sang Youl Lee , Chung song Kim , June O Song , Kwang Ki Choi
IPC分类号： H01L33/60
CPC分类号： H01L33/382 , F21K9/00 , H01L25/0753 , H01L27/153 , H01L33/20 , H01L33/387 , H01L33/405 , H01L33/62 , H01L2924/0002 , H01L2933/0016 , H01L2924/00
摘要： The present invention relates to a light emitting device, a light emitting device package, and a lighting device with the same. The light emitting device includes a light emitting structure including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer, a second electrode layer formed on an underside of the light emitting structure connected to the second conductive type semiconductor layer electrically, a first electrode layer in contact with the first conductive type semiconductor layer passed through the second conductive type semiconductor layer and the active layer, and an insulating layer formed between the second electrode layer and the first electrode layer, between the second conductive type semiconductor layer and the first electrode layer, and between the active layer and the first electrode layer.
摘要翻译：本发明涉及一种发光器件，发光器件封装以及具有该发光器件的照明器件。发光器件包括：发光结构，包括第一导电类型半导体层，有源层和第二导电类型半导体层，形成在与第二导电类型半导体层连接的发光结构的下侧上的第二电极层与通过第二导电类型半导体层和有源层的第一导电类型半导体层接触的第一电极层和形成在第二电极层和第一电极层之间的绝缘层，在第二导电类型半导体层和第一电极层，以及有源层和第一电极层之间。

28. 发明授权

US08766287B2 Light emitting device, light emitting device package, and lighting device with the same 有权
标题翻译：发光装置，发光装置封装和照明装置
公开(公告)号：US08766287B2
公开(公告)日：2014-07-01
申请号：US13242345
申请日：2011-09-23
申请人： Ji Hyung Moon , Sang Youl Lee , Chung Song Kim , Kwang Ki Choi , June O Song
发明人： Ji Hyung Moon , Sang Youl Lee , Chung Song Kim , Kwang Ki Choi , June O Song
IPC分类号： H01L29/18 , H01L33/38 , H01L25/075 , H01L33/62 , H01L27/15 , H01L33/20 , F21K99/00
CPC分类号： H01L33/382 , F21K9/00 , H01L25/0753 , H01L27/153 , H01L33/20 , H01L33/387 , H01L33/405 , H01L33/62 , H01L2924/0002 , H01L2933/0016 , H01L2924/00
摘要： The present invention relates to a light emitting device, a light emitting device package, and a lighting device with the same.The light emitting device includes a light emitting structure including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer, a second electrode layer formed on an underside of the light emitting structure connected to the second conductive type semiconductor layer electrically, a first electrode layer in contact with the first conductive type semiconductor layer passed through the second conductive type semiconductor layer and the active layer, and an insulating layer formed between the second electrode layer and the first electrode layer, between the second conductive type semiconductor layer and the first electrode layer, and between the active layer and the first electrode layer.
摘要翻译：本发明涉及一种发光器件，发光器件封装以及具有该发光器件的照明器件。发光器件包括：发光结构，包括第一导电类型半导体层，有源层和第二导电类型半导体层，形成在与第二导电类型半导体层连接的发光结构的下侧上的第二电极层与通过第二导电类型半导体层和有源层的第一导电类型半导体层接触的第一电极层和形成在第二电极层和第一电极层之间的绝缘层，在第二导电类型半导体层和第一电极层，以及有源层和第一电极层之间。

29. 发明授权

US08420417B2 Light emitting device and method of manufacture 有权
标题翻译：发光装置及其制造方法
公开(公告)号：US08420417B2
公开(公告)日：2013-04-16
申请号：US12974237
申请日：2010-12-21
申请人： Hwan Hee Jeong , Ji Hyung Moon , So Jung Kim , June O Song
发明人： Hwan Hee Jeong , Ji Hyung Moon , So Jung Kim , June O Song
IPC分类号： H01L21/00
CPC分类号： H01L33/38 , H01L33/0079 , H01L33/405 , H01L2224/48091 , H01L2924/12032 , H01L2924/00014 , H01L2924/00
摘要： A method of making a light emitting device includes forming an active layer between first and semiconductor layers of different conductivity types, and forming a transparent conductive layer adjacent the second semiconductor layer. The transparent conductive layer includes a first transparent conductive region contacting a first region of the second semiconductor layer and a second transparent conductive region contacting a second region of the second semiconductor layer. An electrode is formed adjacent the first semiconductor layer in vertical alignment with the second region.
摘要翻译：制造发光器件的方法包括在不同导电类型的第一半导体层和半导体层之间形成有源层，以及在第二半导体层附近形成透明导电层。透明导电层包括与第二半导体层的第一区域接触的第一透明导电区域和与第二半导体层的第二区域接触的第二透明导电区域。与第二区域垂直对准地形成与第一半导体层相邻的电极。

30. 发明申请

US20110291140A1 LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE PACKAGE 审中-公开
标题翻译：发光装置和发光装置包装
公开(公告)号：US20110291140A1
公开(公告)日：2011-12-01
申请号：US13116192
申请日：2011-05-26
申请人： Kwang Ki Choi , Ji hyung Moon , June O Song , Sang Youl Lee , Tae Yeon Seong , Se Yeon Jung , Joon Woo Jeon , Seong Han Park
发明人： Kwang Ki Choi , Ji hyung Moon , June O Song , Sang Youl Lee , Tae Yeon Seong , Se Yeon Jung , Joon Woo Jeon , Seong Han Park
IPC分类号： H01L33/10 , H01L33/26
CPC分类号： H01L33/40 , H01L33/0079 , H01L33/20 , H01L33/22 , H01L33/32 , H01L33/38 , H01L33/405 , H01L2224/48091 , H01L2224/48247 , H01L2924/12032 , H01L2924/00014 , H01L2924/00
摘要： Provided is a light emitting device. The light emitting device includes a light emitting structure layer including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer, a gallium barrier layer on the light emitting structure layer, and a metal electrode layer on the gallium barrier layer.
摘要翻译：提供了一种发光装置。发光器件包括发光结构层，该发光结构层包括第一导电类型半导体层，有源层和第二导电类型半导体层，发光结构层上的镓阻挡层，以及镓势垒上的金属电极层层。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式