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21. 发明授权

US08507906B2 CMOS image sensor and method of manufacturing the same 有权
标题翻译： CMOS图像传感器及其制造方法
公开(公告)号：US08507906B2
公开(公告)日：2013-08-13
申请号：US12591909
申请日：2009-12-04
申请人： Sung-ho Park , I-hun Song , Wook Lee , Sang-wook Kim , Sun-il Kim , Jae-chul Park
发明人： Sung-ho Park , I-hun Song , Wook Lee , Sang-wook Kim , Sun-il Kim , Jae-chul Park
IPC分类号： H01L31/032 , H01L21/00
CPC分类号： H01L27/14636 , H01L27/1225 , H01L27/14609 , H01L27/14612 , H01L27/14641 , H01L27/14645 , H01L27/14689
摘要： Provided is a complementary metal oxide semiconductor (CMOS) image sensor having a structure capable of increasing areas of photodiodes in unit pixels and expanding light receiving areas of the photodiodes. In the CMOS image sensor, transfer transistors may be formed on the photodiode, and reset transistors, source follower transistors, and selection transistors may be formed on a layer on which the transfer transistors are not formed. In such a CMOS image sensor, the areas of the photodiodes may be increased in unit pixels so that a size of the unit pixels may be reduced and sensitivity of the pixel may be improved.
摘要翻译：提供了具有能够增加单位像素中的光电二极管的面积并扩大光电二极管的光接收面积的结构的互补金属氧化物半导体（CMOS）图像传感器。在CMOS图像传感器中，可以在光电二极管上形成传输晶体管，并且可以在不形成传输晶体管的层上形成复位晶体管，源极跟随器晶体管和选择晶体管。在这样的CMOS图像传感器中，可以以单位像素增加光电二极管的面积，从而可以减小单位像素的尺寸，并且可以提高像素的灵敏度。

22. 发明申请

US20100283048A1 CMOS image sensor and method of manufacturing the same 有权
标题翻译： CMOS图像传感器及其制造方法
公开(公告)号：US20100283048A1
公开(公告)日：2010-11-11
申请号：US12591909
申请日：2009-12-04
申请人： Sung-ho Park , I-hun Song , Wook Lee , Sang-wook Kim , Sun-il Kim , Jae-chul Park
发明人： Sung-ho Park , I-hun Song , Wook Lee , Sang-wook Kim , Sun-il Kim , Jae-chul Park
IPC分类号： H01L31/032
CPC分类号： H01L27/14636 , H01L27/1225 , H01L27/14609 , H01L27/14612 , H01L27/14641 , H01L27/14645 , H01L27/14689
摘要： Provided is a complementary metal oxide semiconductor (CMOS) image sensor having a structure capable of increasing areas of photodiodes in unit pixels and expanding light receiving areas of the photodiodes. In the CMOS image sensor, transfer transistors may be formed on the photodiode, and reset transistors, source follower transistors, and selection transistors may be formed on a layer on which the transfer transistors are not formed. In such a CMOS image sensor, the areas of the photodiodes may be increased in unit pixels so that a size of the unit pixels may be reduced and sensitivity of the pixel may be improved.
摘要翻译：提供了具有能够增加单位像素中的光电二极管的面积并扩大光电二极管的光接收面积的结构的互补金属氧化物半导体（CMOS）图像传感器。在CMOS图像传感器中，可以在光电二极管上形成传输晶体管，并且可以在不形成传输晶体管的层上形成复位晶体管，源极跟随器晶体管和选择晶体管。在这样的CMOS图像传感器中，可以以单位像素增加光电二极管的面积，从而可以减小单位像素的尺寸，并且可以提高像素的灵敏度。

23. 发明授权

US08373237B2 Transistor and method of manufacturing the same 有权
标题翻译：晶体管及其制造方法
公开(公告)号：US08373237B2
公开(公告)日：2013-02-12
申请号：US12458251
申请日：2009-07-07
申请人： Sung-ho Park , Chang-jung Kim , I-hun Song , Sang-wook Kim , Jae-chul Park
发明人： Sung-ho Park , Chang-jung Kim , I-hun Song , Sang-wook Kim , Jae-chul Park
IPC分类号： H01L27/088
CPC分类号： H01L29/785 , H01L21/8221 , H01L27/0688 , H01L29/66795 , H01L29/7869
摘要： Example embodiments provide a transistor and a method of manufacturing the same. The transistor may include a channel layer formed of an oxide semiconductor and a gate having a three-dimensional structure. A plurality of the transistors may be stacked in a perpendicular direction to a substrate. At least some of the plurality of transistors may be connected to each other.
摘要翻译：示例性实施例提供晶体管及其制造方法。晶体管可以包括由氧化物半导体形成的沟道层和具有三维结构的栅极。多个晶体管可以沿垂直于衬底的方向堆叠。多个晶体管中的至少一些可以彼此连接。

24. 发明申请

US20100140608A1 Transistor and method of manufacturing the same 有权
标题翻译：晶体管及其制造方法
公开(公告)号：US20100140608A1
公开(公告)日：2010-06-10
申请号：US12458251
申请日：2009-07-07
申请人： Sung-ho Park , Chang-jung Kim , I-hun Song , Sang-wook Kim , Jae-chul Park
发明人： Sung-ho Park , Chang-jung Kim , I-hun Song , Sang-wook Kim , Jae-chul Park
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L29/785 , H01L21/8221 , H01L27/0688 , H01L29/66795 , H01L29/7869
摘要： Example embodiments provide a transistor and a method of manufacturing the same. The transistor may include a channel layer formed of an oxide semiconductor and a gate having a three-dimensional structure. A plurality of the transistors may be stacked in a perpendicular direction to a substrate. At least some of the plurality of transistors may be connected to each other.
摘要翻译：示例性实施例提供晶体管及其制造方法。晶体管可以包括由氧化物半导体形成的沟道层和具有三维结构的栅极。多个晶体管可以沿垂直于衬底的方向堆叠。多个晶体管中的至少一些可以彼此连接。

25. 发明授权

US08917260B2 Optical touch panels and methods of driving the same 有权
标题翻译：光触摸面板及其驱动方法
公开(公告)号：US08917260B2
公开(公告)日：2014-12-23
申请号：US12805722
申请日：2010-08-17
申请人： Sun-il Kim , Chang-jung Kim , Sang-hun Jeon , I-hun Song , Jae-chul Park
发明人： Sun-il Kim , Chang-jung Kim , Sang-hun Jeon , I-hun Song , Jae-chul Park
IPC分类号： G06F3/042 , G06F3/041 , G06F3/038
CPC分类号： G06F3/0412 , G06F3/0386
摘要： An optical touch panel may include a plurality of light-sensing areas. The plurality of light-sensing areas may be integrally formed with pixels in a display panel or may be formed on the display panel, in order to sense incident light from outside the optical touch panel. A method of driving an optical touch panel may include sensing a change in an output from a plurality of light-sensing areas between two time points and determining that there is an optical input when the change in the output is greater than or equal to a first reference value that is defined in advance. The light-sensing areas may be integrally formed with pixels in a display panel or formed on a surface of the display panel, for sensing incident light from outside the optical touch panel.
摘要翻译：光学触摸面板可以包括多个感光区域。多个感光区域可以与显示面板中的像素一体地形成，或者可以形成在显示面板上，以便感测来自光学触摸面板外部的入射光。驱动光学触摸面板的方法可以包括：在两个时间点之间感测来自多个光感测区域的输出的变化，并且当输出的变化大于或等于第一时间点时，确定存在光学输入提前定义的参考值。光感测区域可以与显示面板中的像素一体地形成或形成在显示面板的表面上，用于感测来自光学触摸面板外部的入射光。

26. 发明申请

US20110141060A1 Optical touch panels and methods of driving the same 有权
标题翻译：光触摸面板及其驱动方法
公开(公告)号：US20110141060A1
公开(公告)日：2011-06-16
申请号：US12805722
申请日：2010-08-17
申请人： Sun-il Kim , Chang-jung Kim , Sang-hun Jeon , I-hun Song , Jae-chul Park
发明人： Sun-il Kim , Chang-jung Kim , Sang-hun Jeon , I-hun Song , Jae-chul Park
IPC分类号： G06F3/042
CPC分类号： G06F3/0412 , G06F3/0386
摘要： An optical touch panel may include a plurality of light-sensing areas. The plurality of light-sensing areas may be integrally formed with pixels in a display panel or may be formed on the display panel, in order to sense incident light from outside the optical touch panel. A method of driving an optical touch panel may include sensing a change in an output from a plurality of light-sensing areas between two time points and determining that there is an optical input when the change in the output is greater than or equal to a first reference value that is defined in advance. The light-sensing areas may be integrally formed with pixels in a display panel or formed on a surface of the display panel, for sensing incident light from outside the optical touch panel.
摘要翻译：光学触摸面板可以包括多个感光区域。多个感光区域可以与显示面板中的像素一体地形成，或者可以形成在显示面板上，以便感测来自光学触摸面板外部的入射光。驱动光学触摸面板的方法可以包括在两个时间点之间感测多个光感测区域的输出的变化，并且当输出的变化大于或等于第一时间点时确定存在光学输入提前定义的参考值。光感测区域可以与显示面板中的像素一体地形成或形成在显示面板的表面上，用于感测来自光学触摸面板外部的入射光。

27. 发明授权

US09348037B2 X-ray pixels including double photoconductors and X-ray detectors including the X-ray pixels 有权
标题翻译：包括双光电导体的X射线像素和包括X射线像素的X射线检测器
公开(公告)号：US09348037B2
公开(公告)日：2016-05-24
申请号：US12923553
申请日：2010-09-28
申请人： Sang-wook Kim , Jae-chul Park , Sun-il Kim , Chang-jung Kim
发明人： Sang-wook Kim , Jae-chul Park , Sun-il Kim , Chang-jung Kim
IPC分类号： H01L31/08 , G01T1/24
CPC分类号： G01T1/242 , H01L31/085
摘要： Example embodiments are directed to X-ray detectors including double photoconductors. According to example embodiments, the X-ray detector includes a first photoconductor on which X-rays are incident, and a second photoconductor on which X-rays transmitted through the first photoconductor are incident. The first photoconductor and the second photoconductor include a tandem structure. The first photoconductor is formed of silicon and absorbs X-rays in a low energy band, and the second photoconductor is formed of a material that absorbs X-rays in an energy band higher than the low energy band of the X-rays absorbed by silicon.
摘要翻译：示例性实施例涉及包括双光电导体的X射线检测器。根据示例性实施例，X射线检测器包括在其上入射X射线的第一感光体和通过第一光电导体透射X射线的第二感光体。第一光电导体和第二光电导体包括串联结构。第一光电导体由硅形成并在低能带中吸收X射线，第二光电导体由吸收X射线的能量带的材料形成，该能带高于由硅吸收的X射线的低能带。

28. 发明授权

US08847168B2 Large-scale X-ray detectors and methods of manufacturing the same 有权
标题翻译：大型X射线探测器及其制造方法
公开(公告)号：US08847168B2
公开(公告)日：2014-09-30
申请号：US12929203
申请日：2011-01-07
申请人： Sun-il Kim , Jae-chul Park , Sang-wook Kim , Chang-jung Kim
发明人： Sun-il Kim , Jae-chul Park , Sang-wook Kim , Chang-jung Kim
IPC分类号： G01T1/24 , H01L31/08 , H01L27/146
CPC分类号： G01T1/24 , H01L24/24 , H01L24/73 , H01L27/14609 , H01L27/14618 , H01L27/14634 , H01L27/14636 , H01L27/14676 , H01L27/14687 , H01L31/085 , H01L2224/16225 , H01L2924/12043 , H01L2924/14 , H01L2924/15788 , H01L2924/00
摘要： Large-scale X-ray detectors and methods of manufacturing the same are provided, the large-scale X-ray detectors include a photoconductor layer configured to generate electrical charges according to an incident X-ray using an entire area of the photoconductor layer, a common electrode on an upper surface of the photoconductor layer, a plurality of pixel electrodes, configured to convert the electrical charges into electrical signals, on a lower surface of the photoconductor layer and divided into a plurality of groups, and a plurality of application-specific integrated circuits (ASICs) each corresponding to one of the groups. Each ASIC is configured to process the electrical signals conveyed via the pixel electrodes in the corresponding group. The ASICs process the electrical signals so that seamless image information is collectively generated by the ASICs with respect to the entire area of the photoconductor layer.
摘要翻译：提供了大规模X射线检测器及其制造方法，大规模X射线检测器包括：光电导体层，被配置为根据入射的X射线使用光电导体层的整个面积产生电荷; 所述光电导体层的上表面上的公共电极，被配置为将所述电荷转换为电信号的多个像素电极，在所述感光体层的下表面上并分成多个组，以及多个应用特定集成电路（ASIC），每个对应于该组中的一个。每个ASIC被配置为处理通过相应组中的像素电极传送的电信号。 ASIC处理电信号，使得ASIC相对于感光体层的整个区域共同地产生无缝图像信息。

29. 发明申请

US20120181440A1 Pastes For Photoelectric Conversion Layers Of X-Ray Detectors, X-Ray Detectors And Methods Of Manufacturing The Same 有权
标题翻译：用于X射线探测器，X射线探测器的光电转换层及其制造方法
公开(公告)号：US20120181440A1
公开(公告)日：2012-07-19
申请号：US13246221
申请日：2011-09-27
申请人： Sun-il Kim , Jae-chul Park , Chang-jung Kim , Sang-wook Kim
发明人： Sun-il Kim , Jae-chul Park , Chang-jung Kim , Sang-wook Kim
IPC分类号： G01T1/24 , B05D5/12 , G01T1/16 , H01L31/0264
CPC分类号： H01L51/441 , Y02E10/549 , Y02P70/521
摘要： A paste for a photoelectric conversion layer used in an X-ray detector includes photoconductive particles, an organic polymer binder, a first organic solvent to dissolve the organic polymer binder, and a second organic solvent. The second organic solvent has a boiling point in a range of between about 150° C. and about 210° C., inclusive.
摘要翻译：用于X射线检测器的光电转换层用糊剂包括光电导性颗粒，有机聚合物粘合剂，溶解有机聚合物粘合剂的第一有机溶剂和第二有机溶剂。第二有机溶剂的沸点在约150℃至约210℃的范围内。

30. 发明授权

US08963096B2 X-ray detector including oxide semiconductor transistor 有权
标题翻译： X射线检测器包括氧化物半导体晶体管
公开(公告)号：US08963096B2
公开(公告)日：2015-02-24
申请号：US12926921
申请日：2010-12-17
申请人： Sun-il Kim , Jae-chul Park , Sang-wook Kim , Chang-jung Kim
发明人： Sun-il Kim , Jae-chul Park , Sang-wook Kim , Chang-jung Kim
IPC分类号： H01L27/146 , G01T1/24 , H01L31/08
CPC分类号： H01L31/085 , G01T1/24
摘要： Example embodiments are directed an X-ray detector including an oxide semiconductor transistor. The X-ray detector including the oxide semiconductor transistor includes an oxide semiconductor transistor and a signal storage capacitor in parallel to each other on a substrate. The oxide semiconductor transistor includes a channel formed of an oxide semiconductor material, and a photoconductor. A pixel electrode and a common electrode are formed on opposite surfaces of the photoconductor. The channel includes ZnO, or a compound including ZnO and at least one selected from a group consisting of gallium (Ga), indium (In), hafnium (Hf), and tin (Sn).
摘要翻译：示例性实施例涉及包括氧化物半导体晶体管的X射线检测器。包括氧化物半导体晶体管的X射线检测器包括在基板上彼此平行的氧化物半导体晶体管和信号存储电容器。氧化物半导体晶体管包括由氧化物半导体材料形成的沟道和感光体。像素电极和公共电极形成在感光体的相对表面上。该通道包括ZnO或包含ZnO和选自镓（Ga），铟（In），铪（Hf）和锡（Sn）中的至少一种的化合物。

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