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    • 29. 发明授权
    • High performance thin film magnetic write element having high Bsat poles and method for making same
    • 具有高Bsat极的高性能薄膜磁性写入元件及其制造方法
    • US06381095B1
    • 2002-04-30
    • US09386889
    • 1999-08-31
    • Kyusik SinRonald Barr
    • Kyusik SinRonald Barr
    • G11B5147
    • G11B5/313G11B5/3133G11B5/3146G11B5/3163
    • A high performance magnetic write element incorporated in a read/write head having a lower pole including high Bsat back gap and write gap pedestals. The write element further including an upper pole connected with the lower pole to form a yoke and a coil disposed within the yoke and enclosed covered with a write gap material and surrounded by insulating material. The write gap material provides separation between the first and second poles at one end of the yoke to form a write gap therebetween. A method of forming the write element of the present invention includes forming the first pole and building thereupon a back gap pedestal and a write gap pedestal at back and front ends of the first pole respectively. A dielectric layer is deposited on top of the first pole and planarized to have an upper surface coplanar with the top of the first and second pedestals. Upon the dielectric layer the coil is formed on which is deposited the write gap material. The write gap material is deposited so as to cover both the back gap and write gap pedestals. An insulation layer is deposited over the write gap material and masked to avoid covering the pedestals. After curing the insulation layer, an etching process removes at the location of the back gap material. The upper pole can then be formed onto the structure to form the yoke. Covering back gap pedestal with write gap material until the insulation has been cured effectively prevents corrosion of the back gap pedestal which would otherwise be caused by the high temperatures necessary to cure the insulation layer.
    • 一种结合在读/写头中的高性能磁写元件,其具有包括高Bsat后间隙和写间隙基座的下极。 所述写入元件还包括与所述下极连接的上极,以形成轭,所述线圈设置在所述轭内,并被封闭地覆盖有写入间隙材料并被绝缘材料包围。 写间隙材料提供在轭的一端处的第一和第二极之间的间隔,以在它们之间形成写入间隙。 形成本发明的写入元件的方法包括分别在第一极的后端和前端形成第一极和其后面的后间隙基座和写间隙基座。 电介质层沉积在第一极的顶部上并且被平坦化以具有与第一和第二基座的顶部共面的上表面。 在电介质层上形成有在其上沉积写间隙材料的线圈。 写入间隙材料被沉积以覆盖后部间隙和写入间隙基座。 绝缘层沉积在写入间隙材料上并被掩蔽以避免覆盖基座。 在固化绝缘层之后,在后隙材料的位置处去除蚀刻工艺。 然后可以将上极形成在结构上以形成轭。 用间隙材料覆盖背面间隙基座直到绝缘体已经被固化有效地防止背面间隙基座的腐蚀,否则这将由固化绝缘层所需的高温引起。