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21. 发明授权

US08482639B2 Black reference pixel for backside illuminated image sensor 有权
公开(公告)号：US08482639B2
公开(公告)日：2013-07-09
申请号：US12028590
申请日：2008-02-08
申请人： Hsin-Chih Tai , Vincent Venezia , Duli Mao , Howard E. Rhodes
发明人： Hsin-Chih Tai , Vincent Venezia , Duli Mao , Howard E. Rhodes
IPC分类号： H04N9/64
CPC分类号： H01L27/14621 , H01L27/1464 , H01L27/14645 , H01L27/14685
摘要： An imaging sensor pixel array includes a semiconductor substrate, a plurality of active pixels and at least one black reference pixel. The plurality of active pixels are disposed in the semiconductor substrate for capturing an image. Each of the active pixels includes a first region for receiving light including a p-n junction for accumulating an image charge and active pixel circuitry coupled to the first region to readout the image charge. The black reference pixel is also disposed within the semiconductor substrate for generating a black level reference value. The black reference pixel includes a second region for receiving light without a p-n junction and black pixel circuitry coupled to the photodiode region without the p-n junction to readout a black level reference signal.

22. 发明授权

US08426796B2 Image sensor having supplemental capacitive coupling node 有权
标题翻译：具有补充电容耦合节点的图像传感器
公开(公告)号：US08426796B2
公开(公告)日：2013-04-23
申请号：US13619879
申请日：2012-09-14
申请人： Duli Mao , Hsin-Chih Tai , Vincent Venezia , Howard E. Rhodes , Sohei Manabe
发明人： Duli Mao , Hsin-Chih Tai , Vincent Venezia , Howard E. Rhodes , Sohei Manabe
IPC分类号： H01L27/146
CPC分类号： H04N5/35509 , H04N5/3559 , H04N5/3597 , H04N5/37452 , H04N5/376
摘要： An image sensor includes a pixel array, a bit line, a supplemental capacitance node line, and a control circuit. The pixel array includes a plurality of pixel cells each including a floating diffusion (“FD”) node and a photosensitive element coupled to selectively transfer image charge to the FD node. The bit line is coupled to selectively conduct image data output from a first group of the pixel cells. The supplemental capacitance node line is coupled to the FD node of a second group of the pixel cells different from the first group. The control circuit is coupled to the supplemental capacitance node line to selectively increase the potential at the FD node of each of the pixel cells of the second group by selectively asserting a FD boost signal on the supplemental capacitance node line.
摘要翻译：图像传感器包括像素阵列，位线，补充电容节点线和控制电路。像素阵列包括多个像素单元，每个像素单元包括浮动扩散（“FD”）节点和耦合以选择性地将图像电荷传送到FD节点的感光元件。位线被耦合以选择性地进行从第一组像素单元输出的图像数据。辅助电容节点线耦合到与第一组不同的第二组像素单元的FD节点。控制电路通过选择性地在辅助电容节点线上确定FD升压信号来耦合到辅助电容节点线，以选择性地增加第二组的每个像素单元的FD节点的电位。

23. 发明申请

US20130092982A1 PARTIAL BURIED CHANNEL TRANSFER DEVICE FOR IMAGE SENSORS 有权
标题翻译：用于图像传感器的部分通道传输设备
公开(公告)号：US20130092982A1
公开(公告)日：2013-04-18
申请号：US13273026
申请日：2011-10-13
申请人： Gang Chen , Sing-Chung Hu , Hsin-Chih Tai , Duli Mao , Manoj Bikumandla , Wei Zheng , Yin Qian , Zhibin Xiong , Vincent Venezia , Keh-Chiang Ku , Howard E. Rhodes
发明人： Gang Chen , Sing-Chung Hu , Hsin-Chih Tai , Duli Mao , Manoj Bikumandla , Wei Zheng , Yin Qian , Zhibin Xiong , Vincent Venezia , Keh-Chiang Ku , Howard E. Rhodes
IPC分类号： H01L27/148 , H01L31/18 , H01L31/101
CPC分类号： H01L27/14616 , H01L27/14689
摘要： Embodiments of an image sensor pixel that includes a photosensitive element, a floating diffusion region, and a transfer device. The photosensitive element is disposed in a substrate layer for accumulating an image charge in response to light. The floating diffusion region is dispose in the substrate layer to receive the image charge from the photosensitive element. The transfer device is disposed between the photosensitive element and the floating diffusion region to selectively transfer the image charge from the photosensitive element to the floating diffusion region. The transfer device includes a buried channel device including a buried channel gate disposed over a buried channel dopant region. The transfer device also includes a surface channel device including a surface channel gate disposed over a surface channel region. The surface channel device is in series with the buried channel device. The surface channel gate has the opposite polarity of the buried channel gate.
摘要翻译：包括感光元件，浮动扩散区域和转印装置的图像传感器像素的实施例。感光元件设置在基板层中，用于响应于光积累图像电荷。浮动扩散区域设置在衬底层中以从感光元件接收图像电荷。转移装置设置在感光元件和浮动扩散区域之间以选择性地将图像电荷从感光元件转移到浮动扩散区域。传输装置包括掩埋沟道器件，其包括设置在掩埋沟道掺杂区域上的掩埋沟道栅极。转移装置还包括表面通道装置，其包括设置在表面通道区域上的表面通道门。表面通道装置与掩埋通道装置串联。表面沟道栅极具有与掩埋沟道栅极相反的极性。

24. 发明授权

US08405748B2 CMOS image sensor with improved photodiode area allocation 有权
标题翻译： CMOS图像传感器具有改进的光电二极管面积分配
公开(公告)号：US08405748B2
公开(公告)日：2013-03-26
申请号：US12837870
申请日：2010-07-16
申请人： Duli Mao , Hsin-Chih Tai , Vincent Venezia , Yin Qian , Howard E. Rhodes
发明人： Duli Mao , Hsin-Chih Tai , Vincent Venezia , Yin Qian , Howard E. Rhodes
IPC分类号： H04N3/14
CPC分类号： H04N5/3696 , H01L27/14621 , H01L27/1464 , H04N9/04
摘要： Embodiments of an apparatus comprising a pixel array comprising a plurality of macropixels. Each macropixel includes a pair of first pixels each including a color filter for a first color, the first color being one to which pixels are most sensitive, a second pixel including a color filter for a second color, the second color being one to which the pixels are least sensitive and a third pixel including a color filter for a third color, the third color being one to which pixels have a sensitivity between the least sensitive and the most sensitive, wherein the first pixels each occupy a greater proportion of the light-collection area of the macropixel than either the second pixel or the third pixel. Corresponding process and system embodiments are disclosed and claimed.
摘要翻译：包括包括多个宏像素的像素阵列的装置的实施例。每个宏像素包括一对第一像素，每个第一像素包括用于第一颜色的滤色器，第一颜色是像素最敏感的一个，第二像素包括用于第二颜色的滤色器，第二颜色是像素是最不灵敏的，并且第三像素包括用于第三颜色的滤色器，第三颜色是像素在最不灵敏和最敏感之间具有灵敏度的一个，其中第一像素每个占据较大比例的发光元件，大小像素的收集区域比第二像素还是第三像素。公开和要求保护相应的过程和系统实施例。

25. 发明授权

US08338856B2 Backside illuminated image sensor with stressed film 有权
标题翻译：具有应力膜的背面照明图像传感器
公开(公告)号：US08338856B2
公开(公告)日：2012-12-25
申请号：US12853803
申请日：2010-08-10
申请人： Hsin-Chih Tai , Howard E. Rhodes , Wei Zheng , Vincent Venezia , Yin Qian , Duli Mao
发明人： Hsin-Chih Tai , Howard E. Rhodes , Wei Zheng , Vincent Venezia , Yin Qian , Duli Mao
IPC分类号： H01L31/0328
CPC分类号： H01L27/1464 , H01L27/14621 , H01L27/14627 , H01L27/1463 , H01L27/14638
摘要： A backside illuminated (“BSI”) complementary metal-oxide semiconductor (“CMOS”) image sensor includes a photosensitive region disposed within a semiconductor layer and a stress adjusting layer. The photosensitive region is sensitive to light incident on a backside of the BSI CMOS image sensor to collect an image charge. The stress adjusting layer is disposed on a backside of the semiconductor layer to establish a stress characteristic that encourages photo-generated charge carriers to migrate towards the photosensitive region.
摘要翻译：背面照明（BSI）互补金属氧化物半导体（CMOS）图像传感器包括设置在半导体层和应力调整层内的感光区域。感光区域对入射到BSI CMOS图像传感器背面的光敏感，以收集图像电荷。应力调整层设置在半导体层的背面，以建立一种应力特性，该应力特性促使光生电荷载流子迁移到光敏区域。

26. 发明申请

US20120302000A1 LASER ANNEAL FOR IMAGE SENSORS 有权
标题翻译：激光雷达用于图像传感器
公开(公告)号：US20120302000A1
公开(公告)日：2012-11-29
申请号：US13566638
申请日：2012-08-03
申请人： Duli Mao , Hsin-Chih Tai , Vincent Venezia , Yin Qian , Howard E. Rhodes
发明人： Duli Mao , Hsin-Chih Tai , Vincent Venezia , Yin Qian , Howard E. Rhodes
IPC分类号： H01L31/0232
CPC分类号： H01L27/14698 , H01L27/14623 , H01L27/14627 , H01L27/1464 , H01L27/14643 , H01L27/14689
摘要： A technique for fabricating an image sensor including a pixel circuitry region and a peripheral circuitry region includes fabricating front side components on a front side of the image sensor. A dopant layer is implanted on a backside of the image sensor. A anti-reflection layer is formed on the backside and covers a first portion of the dopant layer under the pixel circuitry region while exposing a second portion of the dopant layer under the peripheral circuitry region. The first portion of the dopant layer is laser annealed from the backside of the image sensor through the anti-reflection layer. The anti-reflection layer increases a temperature of the first portion of the dopant layer during the laser annealing.
摘要翻译：一种用于制造包括像素电路区域和外围电路区域的图像传感器的技术包括在图像传感器的正面上制造前侧部件。掺杂剂层植入图像传感器的背面。在背面形成防反射层，并且在像素电路区域下方覆盖掺杂剂层的第一部分，同时在外围电路区域下方暴露掺杂剂层的第二部分。掺杂剂层的第一部分通过抗反射层从图像传感器的背面激光退火。抗反射层在激光退火期间增加掺杂剂层的第一部分的温度。

27. 发明申请

US20120282728A1 BACKSIDE ILLUMINATED IMAGING SENSOR WITH REINFORCED PAD STRUCTURE 有权
标题翻译：具有加强垫片结构的背面照明成像传感器
公开(公告)号：US20120282728A1
公开(公告)日：2012-11-08
申请号：US13554490
申请日：2012-07-20
申请人： Hsin-Chih Tai , Howard E. Rhodes , Duli Mao , Vincent Venezia , Yin Qian
发明人： Hsin-Chih Tai , Howard E. Rhodes , Duli Mao , Vincent Venezia , Yin Qian
IPC分类号： H01L31/02
CPC分类号： H01L24/05 , H01L27/14636 , H01L27/1464 , H01L27/14683 , H01L2224/02165 , H01L2224/04042 , H01L2224/05093 , H01L2224/05096 , H01L2224/05556 , H01L2224/05624 , H01L2224/05647 , H01L2224/05684 , H01L2924/00014 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01029 , H01L2924/01033 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327
摘要： A method of fabricating a backside illuminated imaging sensor that includes a device layer, a metal stack, and an opening is disclosed. The device layer has an imaging array formed in a front side of the device layer, where the imaging array is adapted to receive light from a back side of the device layer. The metal stack is coupled to the front side of the device layer and includes at least one metal interconnect layer having a metal pad. The opening extends from the back side of the device layer to the metal pad to expose the metal pad for wire bonding. The method includes depositing a film on the back side of the device layer and within the opening, then etching the film to form a frame within the opening to structurally reinforce the metal pad.
摘要翻译：公开了一种制造背面照明成像传感器的方法，其包括器件层，金属叠层和开口。器件层具有形成在器件层的前侧的成像阵列，其中成像阵列适于从器件层的背面接收光。金属叠层耦合到器件层的前侧，并且包括具有金属焊盘的至少一个金属互连层。开口从器件层的背面延伸到金属焊盘，露出用于引线接合的金属焊盘。该方法包括在器件层的背侧和开口内沉积薄膜，然后蚀刻薄膜以在开口内形成框架以在金属垫上结构地加固。

28. 发明授权

US08294077B2 Image sensor having supplemental capacitive coupling node 有权
标题翻译：具有补充电容耦合节点的图像传感器
公开(公告)号：US08294077B2
公开(公告)日：2012-10-23
申请号：US12972188
申请日：2010-12-17
申请人： Duli Mao , Hsin-Chih Tai , Vincent Venezia , Howard E. Rhodes , Sohei Manabe
发明人： Duli Mao , Hsin-Chih Tai , Vincent Venezia , Howard E. Rhodes , Sohei Manabe
IPC分类号： H01L27/146
CPC分类号： H04N5/35509 , H04N5/3559 , H04N5/3597 , H04N5/37452 , H04N5/376
摘要： An image sensor includes a pixel array, a bit line, supplemental capacitance node line, and a supplemental capacitance circuit. The pixel array includes a plurality of pixel cells each including a floating diffusion (“FD”) node and a photosensitive element coupled to selectively transfer image charge to the FD node. The bit line is coupled to selectively conduct image data output from a first group of the pixel cells. The supplemental capacitance node line is coupled to the FD node of a second group of the pixel cells to selectively couple a supplemental capacitance to the FD nodes of the second group in response to a control signal. In various embodiments, the first and second group of pixel cells may be the same group or a different group of the pixel cells and may add a capacitive boost feature or a multi conversion gain feature.
摘要翻译：图像传感器包括像素阵列，位线，补充电容节点线和补充电容电路。像素阵列包括多个像素单元，每个像素单元包括浮动扩散（FD）节点和耦合以选择性地将图像电荷传送到FD节点的感光元件。位线被耦合以选择性地进行从第一组像素单元输出的图像数据。辅助电容节点线耦合到第二组像素单元的FD节点，以响应于控制信号选择性地将辅助电容耦合到第二组的FD节点。在各种实施例中，第一和第二组像素单元可以是相同的组或像素单元的不同组，并且可以添加电容性升压特征或多转换增益特征。

29. 发明申请

US20090302409A1 IMAGE SENSOR WITH MULTIPLE THICKNESS ANTI-RELFECTIVE COATING LAYERS 审中-公开
标题翻译：具有多个厚度抗反射涂层的图像传感器
公开(公告)号：US20090302409A1
公开(公告)日：2009-12-10
申请号：US12133299
申请日：2008-06-04
申请人： Yin Qian , Hsin-Chih Tai , Duli Mao , Vincent Venezia , Hidetoshi Nozaki , Howard E. Rhodes
发明人： Yin Qian , Hsin-Chih Tai , Duli Mao , Vincent Venezia , Hidetoshi Nozaki , Howard E. Rhodes
IPC分类号： H01L31/00 , H01L21/00
CPC分类号： H01L27/1463 , H01L27/1462 , H01L27/14621 , H01L27/14629 , H01L27/14645
摘要： An image sensor includes a substrate having a surface at which incident light is received. A pixel array is formed over and within the substrate. The pixel array includes a first and a second pixel arranged to receive light of different colors. The first pixel includes a photosensitive region formed in the substrate and has a first anti-reflective coating (ARC) layer formed over the photosensitive region. The first ARC layer has a first thickness that produces destructive interference above the first ARC layer in response to the incident light. The second pixel includes a photosensitive region formed in the substrate, and a second ARC layer formed over the photosensitive region that produces destructive interference above the second ARC layer in response to the incident light.
摘要翻译：图像传感器包括具有接收入射光的表面的基板。在衬底之上和之内形成像素阵列。像素阵列包括布置成接收不同颜色的光的第一和第二像素。第一像素包括形成在基板中并且在光敏区域上形成的第一抗反射涂层（ARC）层的感光区域。第一ARC层具有响应于入射光而在第一ARC层上方产生破坏性干扰的第一厚度。第二像素包括形成在基板中的感光区域和形成在光敏区域上的响应于入射光而在第二ARC层上方产生相消干涉的第二ARC层。

30. 发明申请

US20090201393A1 Black reference pixel for backside illuminated image sensor 有权
标题翻译：背面照明图像传感器的黑色参考像素
公开(公告)号：US20090201393A1
公开(公告)日：2009-08-13
申请号：US12028590
申请日：2008-02-08
申请人： Hsin-Chih Tai , Vincent Venezia , Duli Mao , Howard E. Rhodes
发明人： Hsin-Chih Tai , Vincent Venezia , Duli Mao , Howard E. Rhodes
IPC分类号： H04N5/225 , H04N9/64 , H04N5/16 , H04N5/18
CPC分类号： H01L27/14621 , H01L27/1464 , H01L27/14645 , H01L27/14685
摘要： An imaging sensor pixel array includes a semiconductor substrate, a plurality of active pixels and at least one black reference pixel. The plurality of active pixels are disposed in the semiconductor substrate for capturing an image. Each of the active pixels includes a first region for receiving light including a p-n junction for accumulating an image charge and active pixel circuitry coupled to the first region to readout the image charge. The black reference pixel is also disposed within the semiconductor substrate for generating a black level reference value. The black reference pixel includes a second region for receiving light without a p-n junction and black pixel circuitry coupled to the photodiode region without the p-n junction to readout a black level reference signal.
摘要翻译：成像传感器像素阵列包括半导体衬底，多个有源像素和至少一个黑色参考像素。多个有源像素设置在用于捕获图像的半导体衬底中。每个有源像素包括用于接收包括用于累积图像电荷的p-n结的光的第一区域和耦合到第一区域的有源像素电路以读出图像电荷。黑色参考像素也设置在半导体衬底内，用于产生黑色电平参考值。黑参考像素包括用于接收没有p-n结的光的第二区域和耦合到没有p-n结的光电二极管区域的黑色像素电路以读出黑电平参考信号。

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