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21. 发明授权

US08955851B2 Metalannular gasket 有权
标题翻译：金属衬垫
公开(公告)号：US08955851B2
公开(公告)日：2015-02-17
申请号：US12312668
申请日：2007-11-05
申请人： Kenji Matsumoto , Kazuhiro Takahashi
发明人： Kenji Matsumoto , Kazuhiro Takahashi
IPC分类号： F16J15/10 , F16B43/00 , F16B41/00
CPC分类号： F16B43/001 , F16B41/002 , F16J15/104 , Y10S277/937
摘要： A metal annular gasket comprising an annular metal base plate; a compound layer integrally laminated on both surfaces of the annular metal base plate, the compound layer being made of synthetic resin or a rubber material mixed with a fiber material; and an annular seal layer having a circumferential covering portion which covers the inner circumferential edge of the annular metal plate and the inner circumferential edge of both compound layers, the compound layer being made of synthetic resin or a rubber material. The annular seal layer is formed such that the surface of the annular seal layer is so connected to the surfaces of the compound layer as to provide smooth transition in its thickness direction.
摘要翻译：一种金属环形垫片，包括环形金属基板; 在环状金属基板的两面一体层叠的复合层，由合成树脂制成的复合层或与纤维材料混合的橡胶材料; 以及环状密封层，其具有覆盖环状金属板的内周缘和两个复合层的内周边缘的周向覆盖部分，复合层由合成树脂或橡胶材料制成。环形密封层形成为使得环形密封层的表面与化合物层的表面连接，以在其厚度方向上提供平滑的过渡。

22. 发明授权

US08859421B2 Manganese oxide film forming method, semiconductor device manufacturing method and semiconductor device 有权
标题翻译：氧化锰形成方法，半导体器件制造方法和半导体器件
公开(公告)号：US08859421B2
公开(公告)日：2014-10-14
申请号：US13267227
申请日：2011-10-06
申请人： Koji Neishi , Junichi Koike , Kenji Matsumoto
发明人： Koji Neishi , Junichi Koike , Kenji Matsumoto
IPC分类号： H01L21/44 , H01L21/4763 , H01L23/48 , H01L23/52 , H01L29/40 , H01L23/532 , H01L21/768 , C23C16/40
CPC分类号： H01L23/53238 , C23C16/40 , C23C16/401 , C23C16/406 , H01L21/76831 , H01L21/76843 , H01L21/76844 , H01L21/76867 , H01L2924/0002 , H01L2924/12044 , H01L2924/00
摘要： There is provided a manganese oxide film forming method capable of forming a manganese oxide film having high adhesivity to Cu. In the manganese oxide film forming method, a manganese oxide film is formed on an oxide by supplying a manganese-containing gas onto the oxide. A film forming temperature for forming the manganese oxide film is set to be equal to or higher than about 100° C. and lower than about 400° C.
摘要翻译：提供了能够形成对Cu具有高粘合性的氧化锰膜的氧化锰膜形成方法。在氧化锰膜形成方法中，通过向氧化物供给含锰气体，在氧化物上形成氧化锰膜。用于形成氧化锰膜的成膜温度设定为等于或高于约100℃且低于约400℃

23. 发明申请

US20140204592A1 LENS MEMBER AND LIGHT-EMITTING DEVICE USING SAME 有权
标题翻译：使用相同的镜头部件和发光装置
公开(公告)号：US20140204592A1
公开(公告)日：2014-07-24
申请号：US14237983
申请日：2012-08-13
申请人： Junji Miyashita , Yasuaki Kayanuma , Kenji Matsumoto
发明人： Junji Miyashita , Yasuaki Kayanuma , Kenji Matsumoto
IPC分类号： F21V5/04
CPC分类号： F21V5/045 , F21K9/20 , F21K9/69 , F21S41/141 , F21S41/143 , F21S41/275 , F21S43/14 , F21S43/26 , F21S43/315 , F21V5/002 , F21V5/04 , F21V7/0091 , F21Y2115/10 , F24S23/31 , G02B3/08 , G02B5/1866 , G02B5/188 , G02B19/0028 , G02B19/0061
摘要： A lens member includes a light-incident side; a light-exit side that is opposite to the light-incident side, a Fresnel lens arranged on a center axis that passes through a center of the light-incident side, and a diffraction grating structure arranged around a periphery of the Fresnel lens and having a center through which the center axis passes. Also, it is disclosed that the Fresnel lens may include a first Fresnel lens and a second Fresnel lens, the first Fresnel lens includes annular prisms that are divided from a convex lens and having a center through which the center axis of the light-incident side passes, and the second Fresnel lens includes annular prisms that are divided from a TIR lens and arranged around the periphery of the first Fresnel lens, centering around the center axis of the light-incident side.
摘要翻译：透镜构件包括光入射侧; 与光入射侧相反的光出射侧，配置在通过光入射侧的中心的中心轴上的菲涅耳透镜，以及绕着菲涅耳透镜的周围配置的衍射光栅结构，具有中心轴通过的中心。此外，公开了菲涅耳透镜可以包括第一菲涅尔透镜和第二菲涅尔透镜，第一菲涅耳透镜包括从凸透镜分离并具有中心的环形棱镜，光入射侧的中心轴穿过该中心并且第二菲涅尔透镜包括从TIR透镜分割并围绕第一菲涅耳透镜的周围以围绕光入射侧的中心轴线为中心布置的环形棱镜。

24. 发明申请

US20120251721A1 DEVICE AND METHOD FOR FORMING FILM 失效
标题翻译：用于形成膜的装置和方法
公开(公告)号：US20120251721A1
公开(公告)日：2012-10-04
申请号：US13386307
申请日：2010-07-21
申请人： Kenji Matsumoto , Hidenori Miyoshi
发明人： Kenji Matsumoto , Hidenori Miyoshi
IPC分类号： C23C16/44 , C23C16/455
CPC分类号： H01L21/0262 , C23C16/40 , C23C16/406 , C23C16/4404 , C23C16/45525 , H01L21/28556 , H01L21/68742 , H01L21/68785 , H01L21/76843 , H01L21/76855
摘要： The present disclosure relates to a film forming apparatus for forming a thin film on a surface of an object to be processed by using an organic metal raw material gas within a processing chamber configured to exhaust air, wherein a hydrophobic layer is installed on a surface of a member exposed to the atmosphere within the processing chamber.
摘要翻译：本发明涉及一种成膜设备，用于通过在被配置为排出空气的处理室内使用有机金属原料气体在待处理物体的表面上形成薄膜，其中疏水层安装在暴露于处理室内的大气的构件。

25. 发明申请

US20120219724A1 METHOD FOR FORMING METAL OXIDE FILM, METHOD FOR FORMING MANGANESE OXIDE FILM, AND COMPUTER-READABLE STORAGE MEDIUM 审中-公开
标题翻译：形成金属氧化物膜的方法，形成锰氧化物膜的方法和计算机可读存储介质
公开(公告)号：US20120219724A1
公开(公告)日：2012-08-30
申请号：US13497929
申请日：2010-09-17
申请人： Koji Neishi , Junichi Koike , Kenji Matsumoto
发明人： Koji Neishi , Junichi Koike , Kenji Matsumoto
IPC分类号： C23C16/18 , C23C16/52 , C23C16/50
CPC分类号： C23C16/40 , H01L21/28556 , H01L21/76843 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： In a method for forming a metal oxide film, by which excellent adhesion between the film and Cu can be provided, a gas containing an organometallic compound is supplied to a base, and the metal oxide film is formed on the base. After forming the metal oxide film on the base by supplying the organometallic compound to the base, the metal oxide film is exposed to the oxygen-containing gas or oxygen-containing plasma in the final step of the process of forming the metal oxide film.
摘要翻译：在形成金属氧化物膜的方法中，通过可以提供膜和Cu之间的优异的粘附性，将含有有机金属化合物的气体供应到基底，并且在基底上形成金属氧化物膜。在通过向基体供给有机金属化合物而在基材上形成金属氧化物膜之后，在形成金属氧化物膜的工序的最后步骤中，将金属氧化物膜暴露于含氧气体或含氧等离子体。

26. 发明授权

US08070910B2 Shower head structure and treating device 失效
标题翻译：淋浴头结构及处理装置
公开(公告)号：US08070910B2
公开(公告)日：2011-12-06
申请号：US12642363
申请日：2009-12-18
申请人： Kenji Matsumoto
发明人： Kenji Matsumoto
IPC分类号： C23F1/00 , H01L21/306
CPC分类号： C23C16/45565 , C23C16/455 , H01L21/67017 , H01L21/67248
摘要： A shower head structure characterized by comprising a shower head section, opposed to the upper surface of a mounting table in an evacuable treating vessel, for injecting a processing gas into the treating vessel; a temperature observation through-hole which opens in the lower surface of the shower head so as to be opposed to the upper surface of the mounting table, a transparent observation window which hermetically seals the upper end of the temperature observation through-hole, a radiation thermometer disposed on the upper surface of the transparent observation window, an adhesion preventive gas supply path communicating with the temperature observation through-hole to prevent a film from adhering to the transparent observation window, wherein the adhesion preventive gas supply path communicates with the temperature observation through-hole through an injection nozzle for injecting the adhesion preventive gas to the transparent observation window.
摘要翻译：一种淋浴喷头结构，其特征在于包括：喷淋头部分，与可抽出处理容器中的安装台的上表面相对，用于将处理气体注入到处理容器中; 在喷头的下表面上开口以与安装台的上表面相对的温度观察通孔，密封温度观察通孔的上端的透明观察窗，辐射设置在透明观察窗的上表面的温度计，与温度观察通孔连通的防粘气供给路径，防止膜粘附在透明观察窗上，其中防粘气供给路与温度观察通过用于将粘附预防气体注入透明观察窗的注射喷嘴的通孔。

27. 发明授权

US08008184B2 Semiconductor device manufacturing method, semiconductor manufacturing apparatus and storage medium 有权
标题翻译：半导体器件制造方法，半导体制造装置和存储介质
公开(公告)号：US08008184B2
公开(公告)日：2011-08-30
申请号：US12627602
申请日：2009-11-30
申请人： Kenji Matsumoto , Shigetoshi Hosaka , Junichi Koike , Koji Neishi
发明人： Kenji Matsumoto , Shigetoshi Hosaka , Junichi Koike , Koji Neishi
IPC分类号： H01L21/768
CPC分类号： H01L23/53238 , H01L21/28556 , H01L21/76844 , H01L21/76855 , H01L21/76873 , H01L21/76883 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A seed layer is formed on a surface of an insulating film and along a recess of the insulating film, and after a copper wiring is buried in the recess, a barrier film is formed, and an excessive metal is removed from the wiring. On a surface of a copper lower layer conductive path exposed at the bottom of the recess, a natural oxide of the copper is reduced or removed. On a substrate from which the natural oxide is reduced or removed, the seed layer, composed of a self-forming barrier metal having oxidative tendency higher than that of copper or an alloy of such metal and copper, is formed. The substrate is heated after burying copper in the recess. Thus, a barrier layer is formed by oxidizing the self-forming barrier metal. An excessive portion of the self-forming barrier metal is deposited on a surface of the buried copper.
摘要翻译：在绝缘膜的表面上并沿着绝缘膜的凹部形成种子层，并且在铜布线埋入凹部中之后形成阻挡膜，并且从布线去除过量的金属。在露出在凹部底部的铜下层导电通路的表面上，铜的天然氧化物被还原或去除。在自然氧化物被还原或除去的基底上，形成由氧化倾向高于铜的自形成阻挡金属或这种金属和铜的合金构成的晶种层。在将铜埋入凹槽中之后，将衬底加热。因此，通过氧化自形成阻挡金属形成阻挡层。自形成阻挡金属的过多部分沉积在掩埋铜的表面上。

28. 发明申请

US20100233876A1 FILM FORMING APPARATUS, FILM FORMING METHOD, COMPUTER PROGRAM AND STORAGE MEDIUM 审中-公开
标题翻译：电影制作装置，电影制作方法，计算机程序和存储介质
公开(公告)号：US20100233876A1
公开(公告)日：2010-09-16
申请号：US12303831
申请日：2007-06-08
申请人： Kenji Matsumoto , Junichi Koike , Koji Neishi
发明人： Kenji Matsumoto , Junichi Koike , Koji Neishi
IPC分类号： H01L21/768 , C23C16/458
CPC分类号： H01L23/53238 , C23C16/18 , C23C16/45529 , C23C16/45565 , C23C16/45574 , H01L21/28556 , H01L21/28562 , H01L21/76831 , H01L21/76844 , H01L21/76864 , H01L21/76871 , H01L21/76877 , H01L2221/1089 , H01L2924/0002 , H01L2924/09701 , H01L2924/00
摘要： In a film forming method, a substrate is first loaded into a vacuum-evacuable processing chamber. At least a transition metal-containing source gas and a reduction gas are supplied into the processing chamber, and the substrate is heated. Then, a thin film is formed in a recess in the surface of the substrate by heat treatment. Accordingly, the surface recess of the substrate can be filled with a copper film.
摘要翻译：在成膜方法中，首先将基板装载到真空排气处理室中。至少含有过渡金属的源气体和还原气体被供给到处理室中，并且加热基板。然后，通过热处理在基板的表面的凹部中形成薄膜。因此，可以用铜膜填充基板的表面凹部。

29. 发明申请

US20100219157A1 FILM FORMING APPARATUS AND FILM FORMING METHOD 审中-公开
标题翻译：薄膜成型装置和薄膜成型方法
公开(公告)号：US20100219157A1
公开(公告)日：2010-09-02
申请号：US12727992
申请日：2010-03-19
申请人： Kenji Matsumoto
发明人： Kenji Matsumoto
IPC分类号： B44C1/22 , C23F1/08 , C23C16/06
CPC分类号： C23C16/18 , C23C16/4486 , H01L21/28556 , H01L21/76864 , H01L21/76867 , H01L21/76873 , H01L2221/1089
摘要： A film forming apparatus 100 is provided with a processing chamber 2 for accommodating a wafer W; a gas supply section 10 for supplying inside the processing chamber 2 with a gas containing a Cu material gas and an Mn material gas; a shower head 4 for introducing the gas fed from the gas supply section 10 into the processing chamber 2; and a vacuum pump 8 for exhausting inside the processing chamber 2. The gas supply section 10 is provided with a Cu material storing section 21; an Mn material storing section 22; a manifold 40 to which the Cu material and the Mn material are introduced to be mixed; one vaporizer 42 for vaporizing the mixture formed at the manifold 40; and material gas supply piping 54 for introducing into the shower head 4 the material gas formed by vaporization.
摘要翻译：成膜装置100设置有用于容纳晶片W的处理室2; 用于在处理室2内部供给含有Cu材料气体和Mn材料气体的气体的气体供给部分10; 用于将从气体供给部10供给的气体导入处理室2的喷淋头4; 以及用于在处理室2内排出的真空泵8.气体供给部10设置有Cu材料收纳部21; Mn材料储存部22; 引入Cu材料和Mn材料以混合的歧管40; 一个蒸发器42用于蒸发形成在歧管40处的混合物; 以及用于将通过蒸发形成的原料气体引入喷淋头4的原料气体供给管路54。

30. 发明授权

US07583382B2 Optical measurement apparatus 失效
标题翻译：光学测量装置
公开(公告)号：US07583382B2
公开(公告)日：2009-09-01
申请号：US10594528
申请日：2005-03-29
申请人： Takakazu Yano , Kenji Matsumoto , Tadahiro Fukuda , Miharu Sugiura
发明人： Takakazu Yano , Kenji Matsumoto , Tadahiro Fukuda , Miharu Sugiura
IPC分类号： G01N21/00 , G01N3/00 , C02F1/461
CPC分类号： G01N30/96 , B01J39/07 , B01J41/07 , B01J47/04 , B01J49/08 , B01J49/30 , B01J49/53 , B01J49/57 , G01N21/21 , G01N30/74 , G01N2030/746 , G01N2030/0035
摘要： An object of the present invention is to provide an optical measurement apparatus equipped with an ion-exchange resin for pretreating a sample, thereby enabling the concentration of component in the sample to be measured with higher accuracy. The optical measurement apparatus of the present invention includes, in addition to the ion-exchange resin, an optical measurement section for measuring, based on the optical characteristics of the component, the concentration of the component in the sample after the sample is passed through the ion-exchange resin.
摘要翻译：本发明的目的是提供一种配备有用于对样品进行预处理的离子交换树脂的光学测量装置，从而能够以更高的精度测量样品中的组分的浓度。本发明的光学测量装置除了离子交换树脂之外还包括光学测量部分，用于基于部件的光学特性，测量样品在样品通过之后的浓度离子交换树脂。

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