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    • 21. 发明授权
    • Method of operating an NC machine tool in accordance with workpiece and
tool profile data
    • 根据工件和刀具轮廓数据操作NC机床的方法
    • US4472782A
    • 1984-09-18
    • US342250
    • 1982-01-25
    • Toshiharu Suzuki
    • Toshiharu Suzuki
    • B23Q15/00B23Q35/12G05B19/4093G05B19/4097G05B19/41G05B19/42G06F15/46
    • G05B19/4202G05B19/41G05B2219/35481G05B2219/49008
    • Method of feeding positional data from a virtual model of a profiled physical model into a movement position device which controls movement of a tool according to the positional data fed thereinto. The method comprises the following steps: defining a virtual stylus whose profile depends on the distribution of "1's" and "0's" in bit positions in a memory space, said positions corresponding to positions in real space with respect to each three-dimensional coordinate axis; storing three-dimensional data on a virtual image of the profiled model, the profile of the former depending on the distribution of "1's" and "0's" in each bit positions in a memory space, said positions corresponding to a positions in real space, the positions in the memory space and real space being referred to the related three-dimensional coordinate systems, and moving the virtual stylus within either a "0" bit area or "1" bit area of the profiled model so as to scan the boundary surface between the distributions of "1's" and "0's", whereby the positional data for forming a male work or female work can be obtained and fed into the position control device.
    • 将位置数据从异型物理模型的虚拟模型进给到根据送入的位置数据来控制工具的移动的移动位置装置的方法。 该方法包括以下步骤:定义一个虚拟笔,其轮廓取决于存储器空间中的比特位置中的“1”和“0”的分布,所述位置对应于相对于每个三维坐标轴的实际空间中的位置 ; 将三维数据存储在异形模型的虚拟图像上,前者的轮廓根据存储器空间中每个位的“1”和“0”的分布,所述位置对应于实际空间中的位置, 存储器空间和实际空间中的位置被称为相关的三维坐标系,并且在虚拟模型的“0”位或“1”位区域内移动虚拟触控笔以便扫描边界面 在“1”和“0”的分布之间,由此可以获得用于形成阳型工件或阴型工件的位置数据并将其馈送到位置控制装置。
    • 26. 发明授权
    • Polymerizable compositions and in-mold cured products using same
    • 可聚合组合物和使用其的模内固化产物
    • US5382619A
    • 1995-01-17
    • US54554
    • 1993-04-28
    • Yuji TakayamaHirokazu MatsuedaMasato SugiuraTatsuhiko OzakiHirotaka WadaToshiharu SuzukiIwao Komiya
    • Yuji TakayamaHirokazu MatsuedaMasato SugiuraTatsuhiko OzakiHirotaka WadaToshiharu SuzukiIwao Komiya
    • C08F283/00C08K3/22C08F226/02C08F271/00C08L39/00
    • C08F283/008
    • A polymerizable composition contains unsaturated urethane shown by Formula (1) given below, vinyl monomer which is copolymerizable with this unsaturated urethane, and an inorganic powder filler at weight ratio of (unsaturated urethane)/(vinyl monomer)=10/90-90/10, the inorganic powder filler being 30-300 weight parts with respect to 100 weight parts of the sum of the unsaturated urethane and vinyl monomer: ##STR1## where X is a residual group obtained by removing isocyanate groups from polyisocyanate; Y is a residual group obtained by removing hydroxyl groups from polyol; R.sup.1 is a residual group obtained by removing hydroxyl group from non-radical polymerizable mono-ol having aliphatic hydrocarbon group with 6-22 carbon atoms; R.sup.2 is H or CH.sub.3 ; and p, q and r are each an integer 1-3 such that 2.ltoreq.p+q.ltoreq.4 and qr.gtoreq.2. In-mold cured products obtained from such a polymerizable composition have superior external appearance and water-resistance, and their mold shrinkage is small.
    • 聚合性组合物含有下述式(1)所示的不饱和氨基甲酸酯,可与该不饱和氨基甲酸酯共聚的乙烯基单体和(不饱和氨基甲酸酯)/(乙烯基单体)= 10/90〜90 / 10,无机粉末填料相对于不饱和聚氨酯和乙烯基单体总和的100重量份为30-300重量份:其中X是通过从多异氰酸酯除去异氰酸酯基团而获得的残基; Y是通过从多元醇中除去羟基获得的残基; R1是通过从具有6-22个碳原子的脂族烃基的不可自由基聚合的单醇中除去羟基而获得的残基; R2是H或CH3; 并且p,q和r各自是整数1-3,使得2 = p + q 4和qr> / = 2。 由这种可聚合组合物获得的模内固化产物具有优异的外观和耐水性,并且它们的模具收缩率小。
    • 27. 发明授权
    • Method of epitaxial growth of semiconductor
    • 半导体外延生长方法
    • US5373803A
    • 1994-12-20
    • US954341
    • 1992-09-30
    • Takashi NoguchiToshiharu Suzuki
    • Takashi NoguchiToshiharu Suzuki
    • C30B1/02H01L21/20C30B1/06
    • H01L21/2026C30B1/023C30B29/06Y10S117/904Y10S117/913
    • A method of epitaxially growing semiconductor crystal by which a single crystal region which is superior in quality can be selectively formed at a high throughput without employing the lithography technique. A shield mask is formed on an upper face of an amorphous semiconductor layer formed on substrate, and excimer laser light is irradiated upon the amorphous semiconductor layer using the shield mask to produce, in the amorphous semiconductor layer, a core from which crystal is to be grown. After the shield mask is removed, low temperature solid phase annealing processing for the amorphous semiconductor layer is performed to grow crystal from the core to form a single crystal region in the amorphous semiconductor layer. Alternatively, the silicon core is formed by irradiating an energy beam, which is capable of being converged into a thin beam and being used to directly draw a picture, at a predetermined position of the amorphous silicon film.
    • 可以在不使用光刻技术的情况下以高通量选择性地形成质量优异的单晶区域的外延生长半导体晶体的方法。 在形成在基板上的非晶半导体层的上表面上形成屏蔽掩模,并且使用屏蔽掩模将准分子激光照射在非晶半导体层上,以在非晶半导体层中产生晶体为芯的芯 长大的。 在去除屏蔽掩模之后,执行用于非晶半导体层的低温固相退火处理以从芯生长晶体,以在非晶半导体层中形成单晶区域。 或者,通过在非晶硅膜的预定位置照射能够被会聚成薄梁并用于直接绘制图像的能量束来形成硅芯。
    • 30. 发明授权
    • Plasma display device and method of producing the same
    • 等离子体显示装置及其制造方法
    • US07002295B2
    • 2006-02-21
    • US10398908
    • 2002-07-17
    • Shigeru KojimaToshiharu SuzukiKatsuya Shirai
    • Shigeru KojimaToshiharu SuzukiKatsuya Shirai
    • H01J17/49
    • H01J9/02H01J11/12H01J11/38
    • A plasma display device such that fluctuation of discharge start voltage and lowering of luminance would not easily occur, the burning phenomenon of the screen is suppressed, and excellent reliability and long life can be secured, and a method of producing the same, are disclosed. The plasma display device comprises a first panel (10) provided with discharge sustaining electrodes (12) and a dielectric layer (14) on the inside thereof, and a second panel (20) laminated on the first panel (10) so that discharge spaces (4) are formed on the inside of the first panel (10), and the trap density and/or the movable metallic ion density in the dielectric layer (14) is not more than 1×1018 pieces/cm3, preferably not more than 1×1017 pieces/cm3.
    • 等离子体显示装置不会容易发生放电开始电压的波动和亮度的降低,屏幕的燃烧现象被抑制,并且可以确保优异的可靠性和长的使用寿命,并且公开了其制造方法。 等离子体显示装置包括在其内部设置有放电维持电极(12)和电介质层(14)的第一面板(10)和层叠在第一面板(10)上的第二面板(20),使得放电空间 (4)形成在第一面板(10)的内部,并且电介质层(14)中的陷阱密度和/或可动金属离子密度不大于1×10 18个/ 3/3,优选不超过1×10 17个/ cm 3以上。