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21. 发明申请

US20100075500A1 Metal polishing slurry and chemical mechanical polishing method 审中-公开
标题翻译：金属抛光浆和化学机械抛光方法
公开(公告)号：US20100075500A1
公开(公告)日：2010-03-25
申请号：US12382461
申请日：2009-03-17
申请人： Masaru Yoshikawa , Tadashi Inaba , Hiroshi Inada , Takamitsu Tomiga
发明人： Masaru Yoshikawa , Tadashi Inaba , Hiroshi Inada , Takamitsu Tomiga
IPC分类号： H01L21/463 , H01L21/465 , C09K13/00 , C07D249/04 , C07D249/08
CPC分类号： C09G1/02 , B24B37/044 , H01L21/3212
摘要： The invention provides a metal polishing slurry containing a compound represented by the general formula (1): (X1)n-L wherein X1 represents a heterocycle containing at least one nitrogen atom, n represents an integer of 2 or more, and L represents a linking group having a valence of 2 or more, provided that X1s whose number is n may be the same or different, an oxidizer and an organic acid; and a method of chemical mechanical polishing using such slurry. The metal polishing slurry and the chemical mechanical polishing method are used in chemical mechanical polishing in the step of manufacturing semiconductor devices and enable a high polishing rate to be achieved while causing minimal dishing in polishing an object (wafer).
摘要翻译：本发明提供含有通式（1）表示的化合物：（X1）nL的金属研磨浆料，其中，X1表示含有至少一个氮原子的杂环，n表示2以上的整数，L表示连结基化合价为2以上，条件是其数为n的X1可以相同或不同，为氧化剂和有机酸; 以及使用这种浆料的化学机械抛光的方法。在制造半导体器件的步骤中使用金属抛光浆料和化学机械抛光方法进行化学机械抛光，并且能够在抛光物体（晶片）的同时最小化凹陷时实现高抛光速率。

22. 发明授权

US07544975B2 Photodiode 有权
标题翻译：光电二极管
公开(公告)号：US07544975B2
公开(公告)日：2009-06-09
申请号：US11480008
申请日：2006-06-30
申请人： Hiroshi Inada
发明人： Hiroshi Inada
IPC分类号： H01L31/0328
CPC分类号： H01L31/02165 , H01L31/03046 , H01L31/1035 , H01L31/167 , Y02E10/544
摘要： A forward light monitoring photodiode having a high reflection film with low dark current for detecting forward light emitted from a laser diode and power of the laser diode in spite of the change of temperatures or yearly degradation. The high reflection film is made by depositing an SiON layer upon an InP window layer or an InP substrate by a plasma CVD method. Al2O3/Si reciprocal layers or Al2O3/TiO2 reciprocal layers are produced upon the SiON layer. The high reflection film reflects 80%-90% of a 45 degree inclination incidence beam and allows 20%-10% of the incidence beam to pass the film and arrive at the InP window or substrate.
摘要翻译：一种具有低暗电流的高反射膜的前向光监测光电二极管，用于检测从激光二极管发射的正向光和激光二极管的功率，尽管温度变化或年降解。通过等离子体CVD法在InP窗口层或InP衬底上沉积SiON层来制造高反射膜。在SiON层上产生Al2O3 / Si往复层或Al2O3 / TiO2倒数层。高反射膜反射了45度的入射光束的80％-90％，并允许20％-10％的入射光束通过膜并到达InP窗口或衬底。

23. 发明申请

US20090066222A1 Organic electronic functional material and use thereof 审中-公开
标题翻译：有机电子功能材料及其用途
公开(公告)号：US20090066222A1
公开(公告)日：2009-03-12
申请号：US11667134
申请日：2005-10-31
申请人： Nobutaka Akashi , Kaori Inayama , Hiroshi Inada , Yasuhiko Shirota
发明人： Nobutaka Akashi , Kaori Inayama , Hiroshi Inada , Yasuhiko Shirota
IPC分类号： H01L51/05 , C07C211/53 , H01J1/63
CPC分类号： H01L51/0059 , C07C211/54 , H01L51/0081 , H01L51/5048 , H01L2251/308 , H05B33/22
摘要： The invention provides an organic electronic functional material which comprises a 1,3,5-tris(4-(N,N-diarylamino)phenyl)benzene represented by the general formula (I) wherein A and B are each preferably a phenyl group having an alkyl group of 1-6 carbons or a cycloalkyl group of 5 or 6 carbons at the 4-position.
摘要翻译：本发明提供一种有机电子功能材料，其包含由通式（I）表示的1,3,5-三（4-（N，N-二芳基氨基）苯基）苯，其中A和B各自优选为具有 4-位的1-6个碳的烷基或5或6个碳的环烷基。

24. 发明申请

US20080312626A1 DISPOSABLE DIAPER 有权
标题翻译：可替代的DIAPER
公开(公告)号：US20080312626A1
公开(公告)日：2008-12-18
申请号：US12145404
申请日：2008-06-24
申请人： Takao KOYAMA , Hidekazu Ito , Hiroshi Inada , Takahiro Arimura
发明人： Takao KOYAMA , Hidekazu Ito , Hiroshi Inada , Takahiro Arimura
IPC分类号： A61F13/15
CPC分类号： A61F13/505 , A61F13/15203 , A61F13/532 , A61F2013/53054
摘要： A disposable diaper comprising a liquid permeable topsheet 2, a liquid impermeable backsheet 3, and a liquid retentive absorbent member 4 and having a substantially oblong shape, the absorbent member 4 in the crotch portion having a middle absorbent portion 42 which occupies the middle 3/7 of the width of the absorbent member 4 and side absorbent portions 43 which each occupy the outermost 1/7 of the width of the absorbent member 4, wherein each side absorbent portion 43 has a larger unit absorption capacity than the middle absorbent portion 42, hydrophobic sheets 3 and 21 are disposed on the lateral outer edge of each side absorbent portion 43 to cover from the upper to lower surfaces of the edge, and an elastic member 71 is disposed in the part having each side absorbent portion 43 in the longitudinal direction of the side absorbent portion 43.
摘要翻译：一种一次性尿布，其包括液体可透过的顶片2，不透液性底片3和液体保持性吸收体4，并且具有大致长方形的形状，裆部中的吸收体4具有中间吸收部42，吸收体4的宽度的7个和吸收体4的宽度的最外侧的1/7的侧吸收部43，其中每个侧吸收部43具有比中间吸收部42更大的单位吸收能力，疏水性片材3和21设置在每个侧面吸收部分43的侧向外边缘上，以从边缘的上部到下部表面覆盖，并且弹性部件71设置在具有纵向方向上的每个侧面吸收部分43的部分中侧吸收部43。

25. 发明申请

US20070264835A1 Photodiode Array, Method For Manufacturing The Same, And The Optical Measurement System Thereof 审中-公开
标题翻译：光电二极管阵列，制造方法及其光学测量系统
公开(公告)号：US20070264835A1
公开(公告)日：2007-11-15
申请号：US11741226
申请日：2007-04-27
申请人： Yasuhiro Iguchi , Hiroshi Inada , Youichi Nagai
发明人： Yasuhiro Iguchi , Hiroshi Inada , Youichi Nagai
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L27/1446 , H01L31/1035 , H01L31/1844 , Y02E10/544 , Y02P70/521
摘要： A photodiode array for near infrared rays that includes photodiodes having a uniform size and a uniform shape, has high selectivity for the wavelength of received light between the photodiodes, and has high sensitivity with the aid of a high-quality semiconducting crystal containing a large amount of nitrogen, a method for manufacturing the photodiode array, and an optical measurement system are provided. The steps of forming a mask layer 2 having a plurality of openings on a first-conductive-type or semi-insulating semiconductor substrate 1, the openings being arranged in one dimension or two dimensions, and selectively growing a plurality of semiconductor layers 3a, 3b, and 3c including an absorption layer 3b in the openings are included.
摘要翻译：包括具有均匀尺寸和均匀形状的光电二极管的近红外线光电二极管阵列对于光电二极管之间的接收光的波长具有高选择性，并且借助于含有大量的高质量半导体晶体具有高灵敏度的氮，制造光电二极管阵列的方法和光学测量系统。在第一导电型或半绝缘半导体衬底1上形成具有多个开口的掩模层2的步骤，所述开口一维或二维地布置，并且选择性地生长多个半导体层3a，包括在开口中包括吸收层3b的3b和3c。

26. 发明授权

US06313916B1 Position detecting system and projection exposure apparatus with the same 有权
标题翻译：位置检测系统和投影曝光装置相同
公开(公告)号：US06313916B1
公开(公告)日：2001-11-06
申请号：US09179594
申请日：1998-10-27
申请人： Hiroshi Inada
发明人： Hiroshi Inada
IPC分类号： G01B1100
CPC分类号： G03F9/7088 , G03F9/7092
摘要： A position detecting system to be used with a grating mark provided on an object and having different directionalities is disclosed, wherein light is projected to the grating mark, and wherein light from the grating mark is detected through a beam splitter disposed at or adjacent a pupil of a detection optical system, for receiving light from the grating mark, the beam splitter having a reflective coating partially formed thereon.
摘要翻译：公开了一种与物体上设置的具有不同方位的光栅标记一起使用的位置检测系统，其中光被投射到光栅标记，并且其中来自光栅标记的光通过设置在瞳孔处或邻近瞳孔处的分束器来检测检测光学系统，用于从光栅标记接收光，分束器具有部分地形成在其上的反射涂层。

27. 发明授权

US5856275A Superconducting wiring lines and process for fabricating the same 失效
标题翻译：超导布线及其制造方法
公开(公告)号：US5856275A
公开(公告)日：1999-01-05
申请号：US798232
申请日：1991-11-01
申请人： Hiroshi Inada , Takao Nakamura , Michitomo Iiyama
发明人： Hiroshi Inada , Takao Nakamura , Michitomo Iiyama
IPC分类号： H01L39/24 , H01P3/08 , B32B9/00
CPC分类号： H01L39/2464 , H01P3/08 , Y10S505/703
摘要： Patterned superconducting wiring lines each having a portion of a thin film of an oxide superconductor deposited on a flat substrate, the portion having a predetermined crystal orientation (a-axis or c-axis orientation) with respect to a flat surface of the substrate, remaining portions of the thin film of the oxide superconductor having a different crystal orientation (c-axis or a-axis orientation) from the portion and/or having an insulation zones. Both of the portion and the remaining portions have a substantially identical thickness so that the thin film has a substantially flat planar surface.
摘要翻译：图案化的超导布线各自具有沉积在平坦基板上的氧化物超导体的薄膜的一部分，相对于基板的平坦表面具有预定的晶体取向（a轴或c轴取向）的部分，剩余氧化物超导体的薄膜的部分具有与该部分不同的晶体取向（c轴或a轴取向）和/或具有绝缘区域。部分和剩余部分都具有基本相同的厚度，使得薄膜具有基本上平坦的平坦表面。

28. 发明授权

US5811375A Superconducting multilayer interconnection formed of oxide superconductor material and method for manufacturing the same 失效
标题翻译：由氧化物超导体材料形成的超导多层互连及其制造方法
公开(公告)号：US5811375A
公开(公告)日：1998-09-22
申请号：US497233
申请日：1995-06-30
申请人： Takao Nakamura , Hiroshi Inada , Michitomo Iiyama
发明人： Takao Nakamura , Hiroshi Inada , Michitomo Iiyama
IPC分类号： H01L23/498 , H01L39/06
CPC分类号： H01L23/49888 , H01L2924/0002 , Y10S505/703
摘要： A superconducting multilayer interconnection comprises a substrate having a principal surface, a first superconducting current path of a c-axis orientated oxide superconductor thin film formed on the principal surface of the substrate, an insulating layer on the first superconducting current path, and a second superconducting current path of a c-axis orientated oxide superconductor thin film formed on the insulating layer so that the first and second superconducting current paths are insulated by the insulating layer. The superconducting multilayer interconnection further comprises a superconducting interconnect current path of an a-axis orientated oxide superconductor thin film, through which the first and second superconducting current paths are electrically connected each other. In the superconducting multilayer interconnection, at least one of the first and second superconducting current paths has a step portion and the superconducting interconnect current path is positioned at the step portion so that the interface area between the superconducting current path and the superconducting interconnect current path is enlarged.
摘要翻译：超导多层互连包括具有主表面的衬底，形成在衬底的主表面上的c轴取向的氧化物超导体薄膜的第一超导电流路径，第一超导电流路径上的绝缘层和第二超导电路形成在绝缘层上的c轴取向的氧化物超导体薄膜的电流通路，使得第一和第二超导电流路径被绝缘层绝缘。超导多层互连还包括a轴取向的氧化物超导体薄膜的超导互连电流路径，第一和第二超导电流路径通过该超导互连电流路径彼此电连接。在超导多层互连中，第一和第二超导电流路径中的至少一个具有台阶部分，并且超导互连电流路径位于台阶部分，使得超导电流路径和超导互连电流路径之间的界面面积为放大

29. 发明授权

US5717222A Superconducting device having an extremely thin superconducting channel formed of oxide superconductor material and method for manufacturing the same 失效
标题翻译：具有由氧化物超导体材料形成的极薄超导通道的超导装置及其制造方法
公开(公告)号：US5717222A
公开(公告)日：1998-02-10
申请号：US652846
申请日：1996-05-23
申请人： Takao Nakamura , Hiroshi Inada , Michitomo Iiyama
发明人： Takao Nakamura , Hiroshi Inada , Michitomo Iiyama
IPC分类号： H01L39/14 , H01L47/00 , H01L29/06 , H01L39/22
CPC分类号： H01L39/225 , H01L39/146
摘要： A superconducting device includes a substrate, a projecting insulating region formed in a principal surface of the substrate, and a first thin film portion of an oxide superconductor formed on the projecting insulating region. Second and third thin film portions of an oxide superconductor are positioned at opposite sides of the projecting insulating region to be continuous to the first thin film portion, respectively, so that a superconducting current can flow through the first thin film portion between the second thin film portion and the third thin film portion. The second thin film portion and the third thin film portion has a thickness larger than that of the first thin film portion. The projecting insulating region is formed of an oxide which is composed of the same constituent elements of the oxide superconductor but which has the oxygen content smaller than that of said oxide superconductor. The superconducting device can be manufactured by forming on a surface of a substrate a compound oxide layer which is composed of the same constituent elements as those of an oxide superconductor but includes the oxygen amount less than that of the oxide superconductor, and which will be brought into an oxide superconductor when oxygen ions are injected, injecting oxygen ions into two separated portions of the compound oxide layer, so that the two separated portions of the compound oxide layer are converted into a pair of thick superconducting regions composed of the oxide superconductor, and heat-treating the layered structure in an oxygen atmosphere so that the oxygen is diffused into a portion of the compound oxide layer between the two separated portions of the compound oxide layer so as to constitute an extremely thin superconducting region.
摘要翻译：超导装置包括基板，形成在基板的主表面上的突出绝缘区域和形成在突出绝缘区域上的氧化物超导体的第一薄膜部分。氧化物超导体的第二和第三薄膜部分分别位于与第一薄膜部分连续的突出绝缘区域的相对侧，使得超导电流可以流过第二薄膜部分之间的第二薄膜部分部分和第三薄膜部分。第二薄膜部分和第三薄膜部分的厚度大于第一薄膜部分的厚度。突出的绝缘区域由氧化物超导体的相同组成元素构成的氧化物形成，氧化物的氧含量比氧化物超导体小。超导装置可以通过在基板的表面上形成复合氧化物层，该复合氧化物层由与氧化物超导体相同的组成元素组成，但是包含比氧化物超导体的氧量小的氧的量，并且将被带到在注入氧离子时成为氧化物超导体，将氧离子注入复合氧化物层的两个分离部分，使得复合氧化物层的两个分离部分被转换成由氧化物超导体构成的一对厚的超导区域，以及在氧气氛中对层状结构进行热处理，使得氧在复合氧化物层的两个分离部分之间扩散到复合氧化物层的一部分中，从而构成极薄的超导区域。

30. 发明授权

US5471069A Superconducting device having an extremely short superconducting channel formed of extremely thin oxide superconductor film 失效
标题翻译：具有由极薄的氧化物超导体膜形成的极短的超导通道的超导装置
公开(公告)号：US5471069A
公开(公告)日：1995-11-28
申请号：US242074
申请日：1994-05-13
申请人： Takao Nakamura , Hiroshi Inada , Michitomo Iiyama
发明人： Takao Nakamura , Hiroshi Inada , Michitomo Iiyama
IPC分类号： H01L39/14 , H01L39/22 , B05D5/12 , H01B12/00
CPC分类号： H01L39/146 , Y10S505/701
摘要： A superconducting device includes a superconducting channel constituted in an oxide superconductor the film deposited on a deposition surface of a substrate. A source electrode and a drain electrode are formed on the oxide superconductor thin film at opposite ends of the superconducting channel, so that a superconducting current can flow through be superconducting channel between the superconductor source electrode and the superconductor drain electrode. A gate electrode is formed through a gate insulator layer on the superconducting channel so as to control the superconducting current flowing through the superconducting channel. The gate electrode is in the form of a thin film and stands upright with respect to the gate insulator layer.
摘要翻译：超导装置包括在氧化物超导体中构成的超导通道，其沉积在基板的沉积表面上。在超导通道的相对端的氧化物超导体薄膜上形成源电极和漏电极，使得超导电流可以超导电源极和超导体漏电极之间流过超导通道。通过超导通道上的栅极绝缘体层形成栅电极，以便控制流过超导通道的超导电流。栅电极为薄膜形式，相对于栅极绝缘体层直立。

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