会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 21. 发明申请
    • Ag base sputtering target and process for producing the same
    • Ag基溅射靶及其制造方法
    • US20060169577A1
    • 2006-08-03
    • US10564502
    • 2004-07-14
    • Katsutoshi TakagiJunichi NakaiYuuki TauchiHitoshi MatsuzakiHideo Fujii
    • Katsutoshi TakagiJunichi NakaiYuuki TauchiHitoshi MatsuzakiHideo Fujii
    • C23C14/00
    • C22C5/06C22F1/14C23C14/3414
    • An Ag sputtering target 6 has three-dimensional fluctuation of grain sizes of not more than 18%. The fluctuation is determined by exposing plural sputtering surfaces by slicing the sputtering target 6 in planes to initial sputtering surface, selecting plural locations on each of the exposed sputtering surfaces, calculating values A1 and B1 using the formula below, and selecting larger one of the values A1 and B1 as the three-dimensional fluctuation of the grain sizes. A1=(Dmax−Dave)/Dave×100(%) B1=(Dave−Dmin)/Dave×100(%) Dmax: maximum value among the grain sizes D at all the selected locations Dmin: minimum value among the grain sizes D at all the selected locations Dave: average value of the grain sizes D at all the selected locations
    • Ag溅射靶6具有不大于18%的晶粒尺寸的三维波动。 通过将溅射靶6在平面内切割成初始溅射表面,在每个暴露的溅射表面上选择多个位置,使用下面的公式计算值A1和B1,并且选择较大值之一来确定多个溅射表面的波动 A1和B1作为晶粒尺寸的三维波动。 <?in-line-formula description =“In-line Formulas”end =“lead”?> A1 =(D ave x100(%)<?in-line-formula description =“In-line Formulas”end =“tail”?> <?in-line-formula description =“In-line Formulas”end =“lead “?”B1 =(D&lt; ave&lt; /&gt; -D&lt; min&gt;)/ D大于x100(%)<?in-line-formula description = 所有选定位置的粒度D中的最大值D :粒度范围内的最小值 D在所有选定位置D :所有选定位置的粒度D的平均值