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21. 发明授权

US5457225A Process for preparation of 5-hydroxy-3-ketoester derivative and optically active substance thereof 失效
标题翻译： 5-羟基-3-酮酯衍生物及其光学活性物质的制备方法
公开(公告)号：US5457225A
公开(公告)日：1995-10-10
申请号：US302342
申请日：1994-09-07
申请人： Nobuki Oguni , Masahiko Hayashi , Katsumasa Harada , Akio Matsushita
发明人： Nobuki Oguni , Masahiko Hayashi , Katsumasa Harada , Akio Matsushita
IPC分类号： C07C67/46 , C07C69/716 , C07C69/76 , C07C69/66
CPC分类号： C07C69/716 , C07C67/46
摘要： Disclosed is a process for the preparation of a 5-hydroxy-3-ketoester derivative of the formula: ##STR1## in which R.sup.1 represents an alkyl group, an alkenyl group, an alkynyl group, an aryl group or a heterocyclic group, and R.sup.2 represents an alkyl group or an aryl group, which comprises causing the reaction of an aldehyde compound of the formula R.sup.1 CHO in which R.sup.1 has the meanings as defined above and diketene in the presence of a metal compound selected from a titanium or aluminum compound having at least one group of --OR.sup.3 in which R.sup.3 represents an alkyl group or an aryl group. Further, a process for the preparation of an optically active substance of the 5-hydroxy-3-ketoester derivative causing the reaction of the above compounds in the presence of the metal compound and optically active Schiff base or a complex compound obtained by reacting the metal compound with the optically active Schiff base, also is disclosed.
摘要翻译：公开了制备下式的5-羟基-3-酮酯衍生物的方法：其中R 1表示烷基，烯基，炔基，芳基或杂环基，R 2 表示烷基或芳基，其包括在选自具有至少具有上述含义的钛或铝化合物的金属化合物的存在下使式R 1 CHO的醛化合物与其中R 1具有如上所定义的二烯酮反应一组-OR 3，其中R 3表示烷基或芳基。此外，制备5-羟基-3-酮酯衍生物的光学活性物质的方法，其导致上述化合物在金属化合物和光学活性席夫碱存在下的反应或通过使金属与光学活性席夫碱的化合物也被公开。

22. 发明授权

US08404513B2 Solar cell 有权
标题翻译：太阳能电池
公开(公告)号：US08404513B2
公开(公告)日：2013-03-26
申请号：US13486843
申请日：2012-06-01
申请人： Akio Matsushita , Akihiro Itoh , Tohru Nakagawa , Hidetoshi Ishida
发明人： Akio Matsushita , Akihiro Itoh , Tohru Nakagawa , Hidetoshi Ishida
IPC分类号： H01L21/00 , H01L29/15 , H01L31/0256 , H01L27/14 , H01L21/0203 , H01L31/06 , H01L31/00
CPC分类号： H01L31/0693 , H01L31/0543 , H01L31/0687 , Y02E10/52 , Y02E10/544
摘要： A method for generating electric power including the steps of: (a) preparing a solar cell having a condensing lens and a solar cell element, wherein the solar cell element includes an n-type GaAs layer, a p-type GaAs layer, a quantum tunneling layer, an n-type InGaP layer, a p-type InGaP layer, a p-type window layer, an n-side electrode, and a p-side electrode, and satisfies the following equation (I): d2
摘要翻译：一种发电方法，包括以下步骤：（a）制备具有聚光透镜和太阳能电池元件的太阳能电池，其中太阳能电池元件包括n型GaAs层，p型GaAs层，量子隧道层，n型InGaP层，p型InGaP层，p型窗口层，n侧电极和p侧电极，满足下式（I）：d2

23. 发明授权

US07391377B2 Polarization switching/variable directivity antenna 有权
标题翻译：极化开关/可变方向性天线
公开(公告)号：US07391377B2
公开(公告)日：2008-06-24
申请号：US11938497
申请日：2007-11-12
申请人： Akio Matsushita , Tomoyasu Fujishima
发明人： Akio Matsushita , Tomoyasu Fujishima
IPC分类号： H01Q1/38 , H01Q1/48
CPC分类号： H01Q9/0407 , H01Q3/44 , H01Q9/0442 , H01Q21/24
摘要： A polarization switching/variable directivity antenna according to the present invention includes a radiation conductor plate 12 on a front face, and a ground conductor plate 14 on a rear face, of a dielectric substrate 11. At least one directivity switching element and at least two polarization switching elements are provided within the ground conductor plate 14 on the rear face. The directivity switching element includes a first slot which is formed by a removing a loop-like portion from the ground conductor plate 14 and at least two directivity switching switches (22a to 22d). Each polarization switching element includes a first slot which is formed by removing a loop-like portion from the ground conductor plate 14 and at least one polarization switching switch (23a to 23d). Switching of a maximum gain direction of radiation directivity of the antenna is realized through control of the directivity switching switches 22a to 22d, and switching of the rotation direction of a circularly polarized wave which is emitted from the antenna is realized through control of the polarization switching switches 23a to 23d.
摘要翻译：根据本发明的偏振切换/可变方向性天线在电介质基板11的前表面上包括辐射导体板12和背面的接地导体板14.至少一个方向性开关元件和至少两个方向性开关元件极性开关元件设置在背面的接地导体板14内。方向性切换元件包括通过从接地导体板14去除环状部分和至少两个方向性切换开关（22a至22d）形成的第一槽。每个偏振切换元件包括通过从接地导体板14和至少一个偏振切换开关（23a至23d）去除环状部分而形成的第一槽。天线的辐射方向性的最大增益方向的切换通过控制方向性切换开关22a〜22d来实现，并且通过控制天线的方式实现从天线射出的圆偏振波的旋转方向的切换偏振切换开关23a〜23d。

24. 发明授权

US4929273A N-benzyl-2-(4-fluoro-3-trifluoromethylphenoxy)butanoic amide and herbicidal composition containing the same 失效
标题翻译： N-苄基-2-（4-氟-3-三氟甲基苯氧基）丁酰胺和含有它们的除草组合物
公开(公告)号：US4929273A
公开(公告)日：1990-05-29
申请号：US412635
申请日：1989-09-22
申请人： Tetsuo Takematsu , Yasutomo Yakeuchi , Mitsuaki Takenaka , Seiji Takamura , Akio Matsushita
发明人： Tetsuo Takematsu , Yasutomo Yakeuchi , Mitsuaki Takenaka , Seiji Takamura , Akio Matsushita
IPC分类号： A01N39/02 , A01N47/30 , A01N47/36 , C07C67/00 , C07C231/00 , C07C233/20 , C07C235/20
CPC分类号： A01N39/02
摘要： There are disclosed N-benzyl-2-(4-fluoro-3-trifluoromethylphenoxy)butanoic amide represented by the formula: ##STR1## and a herbidical composition containing the same as an active ingredient.

25. 发明授权

US08330241B2 Magnetic tunnel junction device 有权
标题翻译：磁隧道连接装置
公开(公告)号：US08330241B2
公开(公告)日：2012-12-11
申请号：US13454696
申请日：2012-04-24
申请人： Nozomu Matsukawa , Akihiro Odagawa , Akio Matsushita
发明人： Nozomu Matsukawa , Akihiro Odagawa , Akio Matsushita
IPC分类号： H01L29/82 , H01L21/00 , G11C11/00 , G11C11/14
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G01R33/098 , G11B5/3906 , G11B5/3909 , H01F10/3286 , H01F10/329 , H01F41/302 , H01L43/10
摘要： The magnetic tunnel junction device of the present invention includes a first ferromagnetic layer, a second ferromagnetic layer, an insulating layer formed between the first ferromagnetic layer and the second ferromagnetic layer. The insulating layer is composed of fluorine-added MgO. The fluorine content in the insulating layer is 0.00487 at. % or more and 0.15080 at. % or less. This device, although it includes a MgO insulating layer, exhibits superior magnetoresistance properties to conventional devices including MgO insulating layers. The fluorine content is preferably 0.00487 at. % or more and 0.05256 at. % or less.
摘要翻译：本发明的磁性隧道结装置包括第一铁磁层，第二铁磁层，形成在第一铁磁层和第二铁磁层之间的绝缘层。绝缘层由添加氟的MgO构成。绝缘层中的氟含量为0.00487at。％以上0.15080。％或更少。该器件虽然包括MgO绝缘层，但是对于包括MgO绝缘层的常规器件，具有优异的磁阻性能。氟含量优选为0.00487at。％以上0.05256。％或更少。

26. 发明授权

US07541999B2 Polarization switching/variable directivity antenna 有权
标题翻译：极化开关/可变方向性天线
公开(公告)号：US07541999B2
公开(公告)日：2009-06-02
申请号：US12059885
申请日：2008-03-31
申请人： Akio Matsushita , Tomoyasu Fujishima
发明人： Akio Matsushita , Tomoyasu Fujishima
IPC分类号： H01Q13/00
CPC分类号： H01P1/165 , H01P1/161 , H01Q3/24 , H01Q13/10 , H01Q21/245
摘要： A polarization switching/variable directivity antenna according to the present invention includes a ground conductor plate 12 on a surface of a dielectric substrate 11, and has a radiation element 13, a directivity switching element 15, and polarization switching elements 16 provided on the ground conductor plate 12 side of the dielectric substrate 11. The radiation element 13 includes a first slot 17a formed by removing a loop-like portion from the ground conductor plate 12. The directivity switching element 15 includes a second slot 17b formed by removing a loop-like portion from the ground conductor plate 12 and directivity switching switches 18. The polarization switching elements 16 includes a third slot 17c formed by removing a linear-shaped portion from the ground conductor plate 12 and polarization switching switches 19a to 19d. Through control of the directivity switching switches 18, switching of a maximum gain direction of radiation directivity of the antenna is realized. Through control of the polarization switching switches 19a to 19d, switching of a rotation direction of a circularly polarized wave which is emitted from the antenna can be realized.
摘要翻译：根据本发明的偏振切换/可变方向性天线包括在电介质基板11的表面上的接地导体板12，并且具有辐射元件13，方向性开关元件15和设置在接地导体上的偏振开关元件16 电介质基板11的板12侧。辐射元件13包括通过从接地导体板12去除环状部而形成的第一槽17a。方向性切换元件15包括通过除去环状形成的第二槽17b 来自接地导体板12和方向性切换开关18.偏振切换元件16包括通过从接地导体板12和偏振切换开关19a至19d去除直线形部分而形成的第三槽17c。通过控制方向性切换开关18，实现了天线的辐射方向性的最大增益方向的切换。通过极化切换开关19a〜19d的控制，可以实现从天线发射的圆偏振波的旋转方向的切换。

27. 发明授权

US08604338B2 Solar cell 有权
标题翻译：太阳能电池
公开(公告)号：US08604338B2
公开(公告)日：2013-12-10
申请号：US13469794
申请日：2012-05-11
申请人： Akio Matsushita , Akihiro Itoh , Tohru Nakagawa , Hidetoshi Ishida
发明人： Akio Matsushita , Akihiro Itoh , Tohru Nakagawa , Hidetoshi Ishida
IPC分类号： H01L31/00
CPC分类号： H01L31/0693 , H01L31/035281 , H01L31/0543 , H01L31/184 , Y02E10/544
摘要： A method for generating electric power with use of a solar cell includes steps of: (a) preparing the solar cell including a condensing lens and a solar cell element, wherein the following inequation set (I) is satisfied: d2
摘要翻译：一种使用太阳能电池产生电力的方法包括以下步骤：（a）制备包括聚光透镜和太阳能电池元件的太阳能电池，其中满足以下不等式组（I）：d2

28. 发明授权

US08420431B2 Solar cell 有权
标题翻译：太阳能电池
公开(公告)号：US08420431B2
公开(公告)日：2013-04-16
申请号：US13460525
申请日：2012-04-30
申请人： Nobuaki Nagao , Takahiro Hamada , Akio Matsushita
发明人： Nobuaki Nagao , Takahiro Hamada , Akio Matsushita
IPC分类号： H01L21/00
CPC分类号： H01L31/1884 , H01L31/035281 , H01L31/0735 , H01L31/1848 , H01L31/1852 , H01L31/1856 , Y02E10/544 , Y02P70/521
摘要： A method of fabricating a solar cell includes steps of: forming an amorphous carbon layer, an AlN layer and a first n-type nitride semiconductor layer on the surface of the graphite substrate, forming a mask layer with a plurality of openings on the first n-type nitride semiconductor layer; forming a plurality of second n-type nitride semiconductor layers on the portions of the first n-type nitride semiconductor layer which are exposed by the plurality of openings; forming a plurality of light absorption layers on the plurality of second n-type nitride semiconductor layers; forming a plurality of p-side nitride semiconductor layers on the plurality of the light absorption layers; forming a p-side electrode; and forming an n-side electrode.
摘要翻译：制造太阳能电池的方法包括以下步骤：在石墨基板的表面上形成非晶碳层，AlN层和第一n型氮化物半导体层，在第一n上形成具有多个开口的掩模层型氮化物半导体层; 在所述第一n型氮化物半导体层的由所述多个开口露出的部分上形成多个第二n型氮化物半导体层; 在所述多个第二n型氮化物半导体层上形成多个光吸收层; 在所述多个所述光吸收层上形成多个p侧氮化物半导体层; 形成p侧电极; 并形成n侧电极。

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