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21. 发明授权

US08446576B2 Carrier concentration measuring device and carrier concentration measuring method 有权
标题翻译：载流子浓度测量装置和载流子浓度测量方法
公开(公告)号：US08446576B2
公开(公告)日：2013-05-21
申请号：US12747284
申请日：2008-12-11
申请人： Hiromasa Ito , Seigo Ohno , Akihide Hamano
发明人： Hiromasa Ito , Seigo Ohno , Akihide Hamano
IPC分类号： G01J3/00
CPC分类号： G01N21/3581 , G01N21/3563 , G01N21/9505 , G01N2021/3568 , H01L22/12
摘要： A nondestructive carrier concentration measuring device (100) includes: a storage unit (101) that stores a correlation between the reflectance of an inorganic compound semiconductor against terahertz light and a carrier concentration; a light radiation unit (103) that irradiates the terahertz light (105) to the inorganic compound semiconductor as a sample; a detection unit (109) that detects reflected light (108) of the inorganic compound semiconductor against the irradiated terahertz light (105); a reflectance calculation unit (111) that compares the irradiated terahertz light (105) with the reflected light (108) and calculates an actual measurement value of the reflectance of the inorganic compound semiconductor; and a read unit (113) that refers to the stored correlation and reads the carrier concentration of the sample corresponding to the actual measurement value of the reflectance.
摘要翻译：非破坏性载体浓度测定装置（100）包括：存储单元（101），其存储无机化合物半导体与太赫兹光的反射率与载流子浓度的相关性; 照射到所述无机化合物半导体作为样品的太赫兹光（105）的光照射单元（103）检测单元，其检测所述无机化合物半导体相对于照射的太赫兹光（105）的反射光（108）; 比较照射的太赫兹光（105）与反射光（108）的反射率计算单元（111），并计算无机化合物半导体的反射率的实际测量值; 以及读取单元（113），其参考存储的相关性并读取与反射率的实际测量值相对应的样本的载流子浓度。

22. 发明授权

US06856723B1 Group velocity dispersion measuring device and group velocity dispersion measuring method 失效
标题翻译：组速度色散测量装置和组速度色散测量方法
公开(公告)号：US06856723B1
公开(公告)日：2005-02-15
申请号：US10182696
申请日：2000-09-22
申请人： Hiromasa Ito , Masato Yoshida , Koichiro Nakamura
发明人： Hiromasa Ito , Masato Yoshida , Koichiro Nakamura
IPC分类号： G01M11/02 , G01M11/00 , G02B6/00 , G02B6/26
CPC分类号： G01M11/3172
摘要： A group velocity dispersion measuring device capable of measuring group velocity dispersion (GVD) with a simple configuration and in a short time, comprising an FSF laser (FSFL) (2) for generating frequency chirp light, an optical amplifier (AMP) (3) for amplifying the frequency chirp light, an optical coupler (4), a circulator (5) for branch-controlling optical signals, a photodetector (6) for receiving a ray of light before and after its propagation through an optical fiber (1) to be measured, and an RF spectrum analyzer (RFSA) (7) for observing an optical spectrum waveform. Beat signals generated between chirp lights before and after the propagation, through the optical fiber (1) to be measured, of frequency chirp light emitted from the FSF laser (2) are alternately observed to calculate a GVD value from frequency differences between these beat signals.
摘要翻译：一种能够以简单的配置和短时间测量组速度色散（GVD）的组速度色散测量装置，包括用于产生频率啁啾光的FSF激光器（FSFL）（2），光放大器（AMP）（3）用于放大频率啁啾光，光耦合器（4），用于分支控制光信号的循环器（5），用于在其通过光纤（1）传播之前和之后接收光线的光电检测器（6）至以及用于观察光谱波形的RF频谱分析仪（RFSA）（7）。交替观察通过待测光纤（1）在FSF激光器（2）发射的频率啁啾光之间传播之前和之后的啁啾光之间产生的啁啾信号，以从这些拍频信号之间的频率差计算GVD值。

23. 发明授权

US4742378A Junction-type semiconductor light emitting device with mesa 失效
标题翻译：具有台面的结型半导体发光器件
公开(公告)号：US4742378A
公开(公告)日：1988-05-03
申请号：US784890
申请日：1985-09-30
申请人： Hiromasa Ito , Humio Inaba
发明人： Hiromasa Ito , Humio Inaba
IPC分类号： H01L33/10 , H01L33/20 , H01L33/30 , H01L33/58 , H01S5/00 , H01S5/026 , H01S5/062 , H01S5/12 , H01S5/18 , H01S5/183 , H01S5/34 , H01L33/00
CPC分类号： H01L33/24 , B82Y20/00 , H01S5/06209 , H01S5/18 , H01S5/18347 , H01S5/0264 , H01S5/06243 , H01S5/12 , H01S5/2027 , H01S5/3428
摘要： A junction-type semiconductor light emitting device comprising a plate portion, a column formed on one surface of the plate portion and electrodes provided on each of opposite surfaces of the plate portion including the column wall, the column having a pn junction formed therein and extending perpendicular to the plate portion, the plate portion having a pn junction formed therein and extending in parallel with the plate portion, these pn junctions being connected with each other, the current density through the pn junction in the column being larger than that through the pn junction in the plate portion under the application of a predetermined voltage across the electrodes, so as to facilitate the continuous oscillation of this light emitting device at room temperature with the resultant light emission through the column. The light emitting device can be readily arranged in matrix and readily integrated in high degree. Various kinds of sophisticated optical functions can be realized by accumulating a photodetector, a saturable light absorbing layer and the like thereon in the direction of thickness.
摘要翻译： PCT No.PCT / JP85 / 00152 Sec。 371日期：1985年9月30日 102（e）1985年9月30日PCT PCT公布1985年3月28日PCT公布。第WO85 / 04531号公报日期：1985年10月10日。一种结型半导体发光器件，包括板部，形成在板部的一个表面上的柱和设置在包括柱壁的板部的每个相对表面上的电极，形成在其中并且垂直于板部分延伸的pn结，板部分具有形成在其中并与板部分平行延伸的pn结，这些pn结彼此连接，通过柱中的pn结的电流密度比在电极上施加预定电压的板部分中的pn结大，以便促使该发光器件在室温下的连续振荡，从而通过色谱柱发光。发光器件可以容易地布置成矩阵并且易于高度整合。可以通过在其上沿着厚度方向累积光电检测器，可饱和光吸收层等来实现各种复杂的光学功能。

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