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    • 23. 发明申请
    • One-piece fiber optic receptacle
    • 一体式光纤插座
    • US20060088248A1
    • 2006-04-27
    • US10971891
    • 2004-10-22
    • Hieu TranJames LutherXin LiuThomas TheuerkornCharles Yow
    • Hieu TranJames LutherXin LiuThomas TheuerkornCharles Yow
    • G02B6/38
    • G02B6/3825G02B6/3821G02B6/3875G02B6/389
    • A one-piece fiber optic receptacle is provided for aligning and optically connecting a plug ferrule with a back-side ferrule of like configuration. The fiber optic receptacle includes a receptacle housing defining an internal cavity opening through an external end and an opposed internal end, an alignment sleeve disposed within the internal cavity and received within the internal end of the receptacle housing, and a sleeve retainer removably secured to the internal end of the receptacle housing and operable for providing access to the alignment sleeve from the internal end of the receptacle housing. The fiber optic receptacle further includes biasing member supports that facilitate loading and ensure alignment of at least one biasing member during assembly and use. Tapered posts may be provided on at least one of the alignment sleeve and the sleeve retainer for retaining and guiding the at least one biasing member during assembly and use.
    • 提供一体式光纤插座,用于对准和光学连接插头套圈与类似结构的背面套圈。 光纤插座包括容纳壳体,其限定通过外部端部和相对的内部端部的内部空腔开口,布置在内部空腔内并且容纳在插座壳体的内部端部内的对准套筒,以及可拆卸地固定到 插座壳体的内部端部并且可操作以从插座壳体的内端提供对准套筒的接近。 光纤插座还包括偏压构件支撑件,其有助于装配和确保在组装和使用期间至少一个偏置构件的对准。 锥形柱可以设置在对准套筒和套筒保持器中的至少一个上,用于在组装和使用期间保持和引导至少一个偏置构件。
    • 24. 发明申请
    • Isolation-less, contact-less array of nonvolatile memory cells each having a floating gate for storage of charges, and methods of manufacturing, and operating therefor
    • 非易失性存储单元的无隔离阵列,每个非易失性存储单元均具有用于存储电荷的浮动栅极,以及制造方法和操作方法
    • US20050224861A1
    • 2005-10-13
    • US10822944
    • 2004-04-12
    • Dana LeeHieu TranJack Frayer
    • Dana LeeHieu TranJack Frayer
    • H01L21/8247G11C16/04G11C16/14H01L21/28H01L21/336H01L27/10H01L27/115H01L29/423H01L29/788H01L29/792
    • H01L29/7881G11C16/0433G11C16/0458G11C16/0491G11C16/14H01L21/28273H01L27/115H01L27/11556H01L29/42328H01L29/42336H01L29/7887
    • An isolation-less, contact-less nonvolatile memory array has a plurality of memory cells each with a floating gate for the storage of charges thereon, arranged in a plurality of rows and columns. Each memory cell can be of a number of different types. All the bit lines and source lines of the various embodiments are buried and are contact-less. In a first embodiment, each cell can be represented by a stacked gate floating gate transistor coupled to a separate assist transistor. The entire array can be planar; or in a preferred embodiment each of the floating gate transistors is in a trench; or each of the assist transistors is in a trench. In a second embodiment, each cell can be represented by a stacked gate floating gate transistor with the transistor in a trench. In a third embodiment, each cell can be represented by two stacked gate floating gate transistors coupled to a separate assist transistor, positioned between the two stacked gate floating gate transistors. The entire array can be planar; or in a preferred embodiment each of the floating gate transistors is in a trench; or each of the assist transistors is in a trench. Novel methods to manufacture the arrays and methods to program, erase, and read each of these embodiments of the memory cells is disclosed.
    • 无隔离的非接触式非易失性存储器阵列具有多个存储单元,每个存储单元具有用于在其上存储电荷的浮动栅极,其布置成多个行和列。 每个存储单元可以是多种不同的类型。 各种实施例的所有位线和源极线被掩埋并且是无接触的。 在第一实施例中,每个单元可以由耦合到单独的辅助晶体管的堆叠栅极浮栅晶体管表示。 整个阵列可以是平面的; 或者在优选实施例中,每个浮栅晶体管处于沟槽中; 或者每个辅助晶体管处于沟槽中。 在第二实施例中,每个单元可以由晶体管在沟槽中的层叠栅极浮栅晶体管表示。 在第三实施例中,每个单元可以由耦合到位于两个堆叠的栅极浮置栅极晶体管之间的单独的辅助晶体管的两个堆叠的栅极浮栅晶体管表示。 整个阵列可以是平面的; 或者在优选实施例中,每个浮栅晶体管处于沟槽中; 或者每个辅助晶体管处于沟槽中。 公开了制造阵列的新方法和编程,擦除和读取存储器单元的这些实施例的每一个的方法。
    • 29. 发明申请
    • High-speed and low-power differential non-volatile content addressable memory cell and array
    • 高速和低功耗差分非易失性内容可寻址存储单元和阵列
    • US20060013028A1
    • 2006-01-19
    • US10893811
    • 2004-07-19
    • Vishal SarinHieu TranIsao Nojima
    • Vishal SarinHieu TranIsao Nojima
    • G11C15/00
    • G11C14/00G11C15/046
    • A differential non-volatile content addressable memory array has a differential non-volatile content addressable memory cell which uses a pair of non-volatile storage elements. Each of the non-volatile storage elements can be a split-gate floating gate transistor or a stack gate floating gate transistor having a first terminal, a second terminal, a channel therebetween and a floating gate over at least a portion of the channel to control the conduction of electrons in the channel, and a control gate. The floating gate storage transistor can be in one of two states: a first state, such as erase, in which current can flow between the first terminal and the second terminal, and a second state, such as programmed, in which substantially no current flows between the first terminal and the second terminal. A pair of differential compare data lines connects to the control gate of each of the pair of non-volatile floating gate transistors. A match line connects to the first terminal of each of the pair of non-volatile floating gate transistors to a first voltage. Finally, the second terminals of each storage element is connected to a second voltage, different from the first voltage. A current passing through the memory cell is indicative of a mis-match between the contents of the compare data lines and the contents of the storage elements.
    • 差分非易失性内容可寻址存储器阵列具有使用一对非易失性存储元件的差分非易失性内容可寻址存储器单元。 每个非易失性存储元件可以是分离栅极浮栅晶体管或堆叠栅极浮栅晶体管,其具有第一端子,第二端子,其间的沟道以及通道的至少一部分上的浮置栅极以控制 通道中的电子传导,以及控制栅极。 浮置栅极存储晶体管可以处于以下两种状态之一:电流可以在第一端子和第二端子之间流动的第一状态,例如擦除,以及第二状态,诸如编程的,其中基本上没有电流流动 在第一端子和第二端子之间。 一对差分比较数据线连接到该对非易失性浮栅晶体管中的每一个的控制栅极。 匹配线将一对非易失性浮栅晶体管的每一个的第一端连接到第一电压。 最后,每个存储元件的第二端子被连接到与第一电压不同的第二电压。 通过存储单元的电流表示比较数据线的内容与存储元件的内容之间的错误匹配。