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    • 23. 发明申请
    • LIQUID CRYSTAL DISPLAY DEVICE AND ELECTRONIC DEVICE
    • 液晶显示器件和电子器件
    • US20110222011A1
    • 2011-09-15
    • US13130253
    • 2009-07-30
    • Atsuhito MuraiHajime ImaiHideki Kitagawa
    • Atsuhito MuraiHajime ImaiHideki Kitagawa
    • G02F1/1343
    • G06F3/0412G02F1/13338G02F1/13394G02F2001/13312
    • A liquid crystal display device of the present invention includes: a TFT array substrate (200); a counter substrate (100); a liquid crystal layer (300) formed between the TFT array substrate (200) and the counter substrate (100); a photodiode (17) formed on the TFT array substrate (200), which photodiode (17) generates an electric current equivalent to intensity of irradiation light irradiated to the photodiode (17); and a light transmitting member (15) employing a non-hollow solid structure, which light transmitting member (15) is provided on a light-receiving surface of the photodiode (17) and sandwiched between the TFT array substrate (200) and the counter substrate (100). This makes it possible to attain, by a simple arrangement, a liquid crystal display device including an optical sensor (photoelectric element) which is not affected by an alignment state of liquid crystal and which has an excellent detection sensitivity.
    • 本发明的液晶显示装置包括:TFT阵列基板(200); 相对基板(100); 形成在TFT阵列基板(200)与对置基板(100)之间的液晶层(300)。 形成在TFT阵列基板(200)上的光电二极管(17),该光电二极管(17)产生与照射到光电二极管(17)的照射光强度相当的电流; 以及采用非中空固体结构的透光构件(15),该透光构件(15)设置在光电二极管(17)的受光面上并夹在TFT阵列基板(200)和计数器 基板(100)。 这使得可以通过简单的配置获得包括不受液晶取向状态影响且具有优异检测灵敏度的光学传感器(光电元件)的液晶显示装置。
    • 26. 发明申请
    • SEMICONDUCTOR DEVICE
    • 半导体器件
    • US20140014951A1
    • 2014-01-16
    • US13979478
    • 2012-01-05
    • Shingo KawashimaYukinobu NakataAtsuhito MuraiShinya Tanaka
    • Shingo KawashimaYukinobu NakataAtsuhito MuraiShinya Tanaka
    • H01L29/786
    • H01L29/78693H01L29/247H01L29/41733H01L29/78606H01L29/78609H01L29/78633H01L29/7869H01L29/78696
    • A semiconductor device (100A) according to the present invention includes: an oxide semiconductor layer (4) having a first contact region (4a) and a second contact region (4b) and a channel region (4c) located between the first contact region (4a) and the second contact region (4b); a source electrode (5) formed on the oxide semiconductor layer (4) so as to be in contact with the first contact region (4a); and a drain electrode (6) formed on the oxide semiconductor layer (4) so as to be in contact with the second contact region (4b). All side faces of the oxide semiconductor layer (4) are located over the gate electrode (2); a width of the source electrode (5) is greater than a width of the oxide semiconductor layer (4); and a width of the drain electrode (6) is greater than a width of the oxide semiconductor layer (4).
    • 根据本发明的半导体器件(100A)包括:具有第一接触区域(4a)和第二接触区域(4b)的氧化物半导体层(4)和位于第一接触区域之间的沟道区域(4c) 4a)和第二接触区域(4b); 形成在所述氧化物半导体层(4)上以与所述第一接触区域(4a)接触的源电极(5); 以及形成在所述氧化物半导体层(4)上以与所述第二接触区域(4b)接触的漏电极(6)。 氧化物半导体层(4)的所有侧面都位于栅电极(2)的上方。 源电极(5)的宽度大于氧化物半导体层(4)的宽度; 并且所述漏电极(6)的宽度大于所述氧化物半导体层(4)的宽度。