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21. 发明授权

US08617794B2 Method of forming patterns 有权
公开(公告)号：US08617794B2
公开(公告)日：2013-12-31
申请号：US13283125
申请日：2011-10-27
申请人： Hideaki Tsubaki
发明人： Hideaki Tsubaki
IPC分类号： G03F7/004 , G03F7/11 , G03F7/32
CPC分类号： C09D127/12 , G03F7/0392 , G03F7/11 , G03F7/16 , G03F7/20 , G03F7/2041 , G03F7/325 , H01L21/0274 , H01L21/0275
摘要： A method of forming patterns includes (a) coating a substrate with a resist composition for negative development to form a resist film, wherein the resist composition contains a resin capable of increasing the polarity by the action of the acid and becomes more soluble in a positive developer and less soluble in a negative developer upon irradiation with an actinic ray or radiation, (b) forming a protective film on the resist film with a protective film composition after forming the resist film and before exposing the resist film, (c) exposing the resist film via an immersion medium, and (d) performing development with a negative developer.

22. 发明授权

US08507194B2 Pattern forming method, resist composition for multiple development used in the pattern forming method, developer for negative development used in the pattern forming method, and rinsing solution for negative development used in the pattern forming method 有权
公开(公告)号：US08507194B2
公开(公告)日：2013-08-13
申请号：US12871969
申请日：2010-08-31
申请人： Hideaki Tsubaki , Shinichi Kanna
发明人： Hideaki Tsubaki , Shinichi Kanna
IPC分类号： G03F7/039 , G03F7/30 , G03F7/32
摘要： A pattern forming method, including: (A) coating a substrate with a positive resist composition of which solubility in a positive developer increases and solubility in a negative developer decreases upon irradiation with actinic rays or radiation, so as to form a resist film; (B) exposing the resist film; and (D) developing the resist film with a negative developer; a positive resist composition for multiple development used in the method; a developer for use in the method; and a rinsing solution for negative development used in the method.

23. 发明授权

US08507193B2 Pattern forming method, resist composition for multiple development used in the pattern forming method, developer for negative development used in the pattern forming method, and rinsing solution for negative development used in the pattern forming method 有权
公开(公告)号：US08507193B2
公开(公告)日：2013-08-13
申请号：US12145270
申请日：2008-06-24
申请人： Hideaki Tsubaki , Shinichi Kanna
发明人： Hideaki Tsubaki , Shinichi Kanna
IPC分类号： G03F7/039 , G03F7/30 , G03F7/32
摘要： A pattern forming method, including: (A) coating a substrate with a positive resist composition of which solubility in a positive developer increases and solubility in a negative developer decreases upon irradiation with actinic rays or radiation, so as to form a resist film; (B) exposing the resist film; and (D) developing the resist film with a negative developer; a positive resist composition for multiple development used in the method; a developer for use in the method; and a rinsing solution for negative development used in the method.

24. 发明授权

US08227183B2 Pattern forming method, resist composition for multiple development used in the pattern forming method, developer for negative development used in the pattern forming method, and rinsing solution for negative development used in the pattern forming method 有权
标题翻译：图案形成方法，图案形成方法中使用的多次显影用抗蚀剂组合物，图案形成方法中使用的负显影用显影剂和图案形成方法中使用的负显影用冲洗液
公开(公告)号：US08227183B2
公开(公告)日：2012-07-24
申请号：US11964454
申请日：2007-12-26
申请人： Hideaki Tsubaki , Shinichi Kanna
发明人： Hideaki Tsubaki , Shinichi Kanna
IPC分类号： G03F7/039 , G03F7/30 , G03F7/32
CPC分类号： G03F7/325 , G03F7/038 , G03F7/039 , G03F7/0392 , G03F7/0397 , G03F7/16 , G03F7/2002 , G03F7/2024 , G03F7/30 , G03F7/32 , G03F7/40 , Y10T428/24802
摘要： A pattern forming method, including: (A) coating a substrate with a positive resist composition of which solubility in a positive developer increases and solubility in a negative developer decreases upon irradiation with actinic rays or radiation, so as to form a resist film; (B) exposing the resist film; and (D) developing the resist film with a negative developer; a positive resist composition for multiple development used in the method; a developer for use in the method; and a rinsing solution for negative development used in the method.
摘要翻译：一种图案形成方法，包括：（A）用正性显影剂中的溶解度增加的正性抗蚀剂组合物涂覆基材，并且在用光化学辐射或辐射照射时，在负极显影剂中的溶解度降低，以形成抗蚀剂膜; （B）曝光抗蚀膜; 和（D）用负极显影剂显影抗蚀膜; 该方法中使用的用于多重显影的正性抗蚀剂组合物; 用于该方法的开发人员; 以及用于该方法的负显影用冲洗液。

25. 发明申请

US20120094235A1 ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING PATTERN USING THE COMPOSITION 审中-公开
标题翻译：丙酰胺或辐射敏感性树脂组合物和使用组合物形成图案的方法
公开(公告)号：US20120094235A1
公开(公告)日：2012-04-19
申请号：US13320116
申请日：2010-05-20
申请人： Toru Tsuchihashi , Hideaki Tsubaki , Koji Shirakawa , Hidenori Takahashi , Tomotaka Tsuchimura
发明人： Toru Tsuchihashi , Hideaki Tsubaki , Koji Shirakawa , Hidenori Takahashi , Tomotaka Tsuchimura
IPC分类号： G03F7/20 , G03F7/027
CPC分类号： G03F7/0045 , G03F7/0046 , G03F7/0397
摘要： According to one embodiment, an actinic-ray- or radiation-sensitive resin composition includes a resin (A) whose solubility in an alkali developer is increased by the action of an acid, the resin containing any of the units of general formula (AI) below and any of the units of general formula (AII) below, and a compound (B) that when exposed to actinic rays or radiation, generates an acid with any of the structures of general formula (BI) below.
摘要翻译：根据一个实施方案，光化射线或辐射敏感性树脂组合物包括其在碱性显影剂中的溶解度通过酸的作用而增加的树脂（A），所述树脂包含任何通式（AI）的单元，和下述通式（AII）的任何单元和当暴露于光化射线或辐射时产生具有以下通式（BI）的任何结构的酸的化合物（B）。

26. 发明申请

US20110250543A1 PATTERN FORMING METHOD 有权
标题翻译：图案形成方法
公开(公告)号：US20110250543A1
公开(公告)日：2011-10-13
申请号：US13162056
申请日：2011-06-16
申请人： Hideaki Tsubaki
发明人： Hideaki Tsubaki
IPC分类号： G03F7/20
CPC分类号： G03F7/0397 , G03F7/0046 , G03F7/0758 , G03F7/2041 , G03F7/325 , G03F7/405
摘要： A pattern forming method, includes: (i) a step of applying a resist composition whose solubility in a positive tone developer increases and solubility in a negative tone developer decreases upon irradiation with an actinic ray or radiation, the resist composition containing a resin capable of increasing a polarity by the action of an acid; (ii) an exposure step; (iii) a step of performing development by using a negative tone developer to form a resist pattern; and (iv) a step of causing a crosslinked layer-forming material to act on the resist pattern to crosslink the resin constituting the resist pattern and the crosslinked layer-forming material, thereby forming a crosslinked layer. According to the present invention, a method for forming a pattern having an effectively micro-dimensioned trench or hole pattern without generation of a scum is provided.
摘要翻译：图案形成方法包括：（i）施加其在正色调显影剂中的溶解度增加的抗蚀剂组合物和在负色调显影剂中的溶解度随着光化射线或辐射照射而降低的步骤，所述抗蚀剂组合物含有能够通过酸的作用增加极性; （ii）曝光步骤; （iii）通过使用负色调剂进行显影以形成抗蚀剂图案的步骤; 和（iv）使交联层形成材料作用于抗蚀剂图案以交联构成抗蚀剂图案的树脂和交联层形成材料，从而形成交联层的步骤。根据本发明，提供了一种形成具有有效的微尺寸沟槽或孔图案而不产生浮渣的图案的方法。

27. 发明申请

US20110183263A1 ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING PATTERN USING THE COMPOSITION 有权
标题翻译：丙酰胺或辐射敏感性树脂组合物和使用组合物形成图案的方法
公开(公告)号：US20110183263A1
公开(公告)日：2011-07-28
申请号：US13015169
申请日：2011-01-27
申请人： Hidenori TAKAHASHI , Shuji Hirano , Hideaki Tsubaki
发明人： Hidenori TAKAHASHI , Shuji Hirano , Hideaki Tsubaki
IPC分类号： G03F7/004 , G03F7/20
CPC分类号： G03F7/0045 , G03F7/0046 , G03F7/0397 , G03F7/2041
摘要： According to one embodiment, an actinic-ray- or radiation-sensitive resin composition includes a resin (P) containing a repeating unit (A) that when exposed to actinic rays or radiation, is decomposed to thereby generate an acid and at least two types of repeating units (B1), (B2) that when acted on by an acid, are decomposed to thereby generate an alkali-soluble group, wherein the alkali-soluble group generated by the repeating unit (B1) is different from the alkali-soluble group generated by the repeating unit (B2).
摘要翻译：根据一个实施方案，光化射线或辐射敏感性树脂组合物包括含有重复单元（A）的树脂（P），其在暴露于光化射线或辐射时被分解，从而产生酸和至少两种类型通过酸作用的重复单元（B1），（B2）分解，从而产生碱溶性基团，其中由重复单元（B1）产生的碱溶性基团不同于碱溶性基团由重复单元（B2）生成。

28. 发明授权

US07985534B2 Pattern forming method 有权
标题翻译：图案形成方法
公开(公告)号：US07985534B2
公开(公告)日：2011-07-26
申请号：US12600038
申请日：2008-05-15
申请人： Hideaki Tsubaki
发明人： Hideaki Tsubaki
IPC分类号： G03F7/26
CPC分类号： G03F7/40 , G03F7/0392 , G03F7/0397 , G03F7/2041 , G03F7/325
摘要： A pattern forming method, includes: (i) a step of applying a resist composition whose solubility in a positive tone developer increases and solubility in a negative tone developer decreases upon irradiation with an actinic ray or radiation, the resist composition containing a resin capable of increasing a polarity by the action of an acid; (ii) an exposure step; (iii) a step of performing development by using a negative tone developer to form a resist pattern; and (iv) a step of causing a crosslinked layer-forming material to act on the resist pattern to crosslink the resin constituting the resist pattern and the crosslinked layer-forming material, thereby forming a crosslinked layer. According to the present invention, a method for forming a pattern having an effectively micro-dimensioned trench or hole pattern without generation of a scum is provided.
摘要翻译：图案形成方法包括：（i）施加其在正色调显影剂中的溶解度增加的抗蚀剂组合物和在负色调显影剂中的溶解度随着光化射线或辐射照射而降低的步骤，所述抗蚀剂组合物含有能够通过酸的作用增加极性; （ii）曝光步骤; （iii）通过使用负色调剂进行显影以形成抗蚀剂图案的步骤; 和（iv）使交联层形成材料作用于抗蚀剂图案以交联构成抗蚀剂图案的树脂和交联层形成材料，从而形成交联层的步骤。根据本发明，提供了一种形成具有有效的微尺寸沟槽或孔图案而不产生浮渣的图案的方法。

29. 发明授权

US09052590B2 Actinic-ray- or radiation-sensitive resin composition and method of forming pattern using the composition 有权
标题翻译：光化学射线或辐射敏感性树脂组合物和使用该组合物形成图案的方法
公开(公告)号：US09052590B2
公开(公告)日：2015-06-09
申请号：US13393173
申请日：2010-08-31
申请人： Hidenori Takahashi , Shuji Hirano , Takayuki Ito , Hideaki Tsubaki
发明人： Hidenori Takahashi , Shuji Hirano , Takayuki Ito , Hideaki Tsubaki
IPC分类号： G03F7/004 , G03F7/00 , G03F7/20 , G03F7/039
CPC分类号： G03F7/0045 , G03F7/0046 , G03F7/0392 , G03F7/0397 , G03F7/20
摘要： According to one embodiment, an actinic-ray- or radiation-sensitive resin composition includes a resin (P) containing not only at least one repeating unit (A) that when exposed to actinic rays or radiation, is decomposed to thereby generate an acid and is expressed by any of general formulae (I) to (III) below but also a repeating unit (B) containing at least an aromatic ring group provided that the repeating unit (B) does not include any of those of general formulae (I) to (III). (The characters used in general formulae (I) to (III) have the meanings mentioned in the description.)
摘要翻译：根据一个实施方案，光化射线或辐射敏感性树脂组合物包括不仅含有至少一个重复单元（A）的树脂（P），当暴露于光化射线或辐射时，其被分解，从而产生酸，由下述通式（I）〜（III）中的任何一个表示，但也包含至少含有芳环基的重复单元（B），条件是重复单元（B）不包括通式（I）至（III）。（通式（I）〜（III）中使用的字符具有说明书中提及的含义。）

30. 发明授权

US09005870B2 Actinic-ray- or radiation-sensitive resin composition and method of forming pattern using the composition 有权
标题翻译：光化学射线或辐射敏感性树脂组合物和使用该组合物形成图案的方法
公开(公告)号：US09005870B2
公开(公告)日：2015-04-14
申请号：US13015169
申请日：2011-01-27
申请人： Hidenori Takahashi , Shuji Hirano , Hideaki Tsubaki
发明人： Hidenori Takahashi , Shuji Hirano , Hideaki Tsubaki
IPC分类号： G03F7/004 , G03F7/039 , G03F7/20
CPC分类号： G03F7/0045 , G03F7/0046 , G03F7/0397 , G03F7/2041
摘要： According to one embodiment, an actinic-ray- or radiation-sensitive resin composition includes a resin (P) containing a repeating unit (A) that when exposed to actinic rays or radiation, is decomposed to thereby generate an acid and at least two types of repeating units B1), (B2) that when acted on by an acid, are decomposed to thereby generate an alkali-soluble group, wherein the alkali-soluble group generated by the repeating unit (B1) is different from the alkali-soluble group generated by the repeating unit (B2).
摘要翻译：根据一个实施方案，光化射线或辐射敏感性树脂组合物包括含有重复单元（A）的树脂（P），其在暴露于光化射线或辐射时被分解，从而产生酸和至少两种类型重复单元B1），（B2），当被酸作用时分解，从而产生碱溶性基团，其中由重复单元（B1）产生的碱溶性基团不同于碱溶性基团由重复单元（B2）生成。

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