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21. 发明公开

US20230290605A1 PHOTOELECTRIC SURFACE ELECTRON SOURCE 审中-公开
公开(公告)号：US20230290605A1
公开(公告)日：2023-09-14
申请号：US18020989
申请日：2021-06-09
申请人： HAMAMATSU PHOTONICS K.K. , NuFlare Technology, Inc.
发明人： Tomohiko HIRANO , Hiroyuki TAKETOMI , Motohiro SUYAMA , Wataru MATSUDAIRA , Akihiro KAGEYAMA , Kota IWASAKI , Taku YAMADA
IPC分类号： H01J37/06 , H01J37/10
CPC分类号： H01J37/06 , H01J37/10 , H01J2237/026
摘要： A photoelectric surface electron source includes a glass substrate configured to receive laser light incident from a substrate back surface to emit the laser light from a substrate main surface, a photoelectric surface provided on the substrate main surface and configured to receive the laser light and emit a photoelectron, a lens array disposed on the substrate back surface and including a plurality of microlenses for condensing the laser light toward the photoelectric surface, and a light shielding portion provided on the glass substrate. The light shielding portion has a back surface-side light shielding layer provided on a back surface-side light shielding surface interposed between the plurality of microlenses on the substrate back surface, and a main surface-side light shielding layer provided on a main surface-side light shielding surface.

22. 发明申请

US20200174074A1 SEMICONDUCTOR WAFER 审中-公开
公开(公告)号：US20200174074A1
公开(公告)日：2020-06-04
申请号：US16631528
申请日：2018-06-13
申请人： HAMAMATSU PHOTONICS K.K.
发明人： Motohiro SUYAMA , Hironori TAKAHASHI , Tomonori NAKAMURA
IPC分类号： G01R31/3185 , G01R31/317 , H01L23/00
摘要： There is provided a semiconductor wafer suitable for the inspection of an operation state.A wafer is a semiconductor wafer having a plurality of chip forming regions, and includes a memory cell that is formed in each of the chip forming regions and an inspection device that is formed in each of the chip forming regions. The inspection device has a photodiode that receives an input of pump light for checking an operation of the memory cell and outputs an electrical signal corresponding to the pump light and a signal processing circuit that generates a logic signal based on the electrical signal output from the photodiode and outputs the logic signal to the memory cell.

23. 发明申请

US20160260592A1 METHOD OF MANUFACTURING ELECTRON MULTIPLIER BODY, PHOTOMULTIPLIER TUBE, AND PHOTOMULTIPLIER 有权
标题翻译：制造电子乘法器体，光电管和照相机的方法
公开(公告)号：US20160260592A1
公开(公告)日：2016-09-08
申请号：US15057144
申请日：2016-03-01
申请人： HAMAMATSU PHOTONICS K.K.
发明人： Motohiro SUYAMA , Hiroshi KOBAYASHI , Shinya HATTORI
IPC分类号： H01J43/10 , H01J43/16 , H01J9/12
CPC分类号： H01J43/10 , B32B3/00 , B32B9/005 , B32B9/04 , B32B2457/20 , C23C14/00 , C23C16/45555 , H01J9/125 , H01J43/16 , H01J43/24
摘要： A method of manufacturing an electron multiplier body, the method includes a step of preparing a first plate-like member having a surface and a back surface and a pair of second plate-like members, a step of forming, in the first plate-like member, a hole portion reaching from the front surface to the back surface, a step of constituting a laminated body by laminating the first and second plate-like members on each other so that the first plate-like member is interposed between the pair of second plate-like members to form a channel defined by the hole portion in the laminated body, a step of integrating the laminated body, a step of constituting a main body portion by cutting the integrated laminated body so that the channel is open, and a step of forming a resistive layer and a secondary electron multiplication layer on an inner surface of the channel.
摘要翻译：一种制造电子倍增器体的方法，该方法包括制备具有表面和背面的第一板状构件和一对第二板状构件的步骤，在第一板状构件构件，从前表面到后表面的孔部分，通过将第一和第二板状构件彼此层压而构成层压体的步骤，使得第一板状构件插入在一对第二板状构件之间板状构件以形成由层叠体中的孔部限定的通道，使层叠体一体化的步骤，通过切割一体的层叠体构成主体部的步骤，使得通道开放;以及台阶在通道的内表面上形成电阻层和二次电子倍增层。

24. 发明申请

US20130256539A1 ION DETECTOR 有权
标题翻译：离子检测器
公开(公告)号：US20130256539A1
公开(公告)日：2013-10-03
申请号：US13902084
申请日：2013-05-24
申请人： HAMAMATSU PHOTONICS K.K.
发明人： Masahiro KOTANI , Takayuki OHMURA , Motohiro SUYAMA , Hiroshi KOBAYASHI
IPC分类号： G01T1/20
CPC分类号： G01T1/2006 , G01T1/185 , G01T1/28
摘要： An ion detector for detecting positive ions and negative ions, includes a housing provided with an ion entrance to make the positive ions and the negative ions enter, a conversion dynode which is disposed in the housing and to which a negative potential is applied, a scintillator which is disposed in the housing and has an electron incident surface which is opposed to the conversion dynode and into which secondary electrons emitted from the conversion dynode are made incident, a conductive layer which is formed on the electron incident surface and to which a positive potential is applied, and a photodetector which detects light emitted by the scintillator in response to incidence of the secondary electrons.
摘要翻译：用于检测正离子和负离子的离子检测器包括设置有离子入口以使正离子和负离子进入的壳体，设置在壳体中并且施加负电位的转换倍增电极，闪烁体其设置在壳体中并且具有与转换倍增电极相对的电子入射表面，并且从转换倍增极发射的二次电子入射到其中;形成在电子入射表面上并且具有正电位的导电层以及光电检测器，其响应于二次电子的入射而检测由闪烁体发射的光。

25. 发明申请

US20220310349A1 PHOTO-CATHODE FOR A VACUUM SYSTEM 有权
公开(公告)号：US20220310349A1
公开(公告)日：2022-09-29
申请号：US17619711
申请日：2020-06-19
申请人： Technical University of Denmark , HAMAMATSU PHOTONICS K.K.
发明人： Peter Uhd JEPSEN , Simon Lehnskov LANGE , Motohiro SUYAMA , Masahiko IGUCHI
IPC分类号： H01J1/34
摘要： This invention concerns a photo-cathode for a vacuum system, wherein the photo-cathode is configured for receiving electromagnetic radiation having an incoming wavelength and for emitting electrons in response thereto. The photo-cathode comprises a conducting structure having a geometry, the geometry comprising a tip section. The tip section is adapted to provide field enhancement, β, when the conducting structure is illuminated with the electromagnetic radiation, wherein β is greater than about 102. The photo-cathode further comprising a substrate, the substrate being or comprising a dielectric substrate, the substrate supporting the conducting structure.

26. 发明申请

US20200258794A1 SEMICONDUCTOR PRODUCTION METHOD AND WAFER INSPECTION METHOD 审中-公开
公开(公告)号：US20200258794A1
公开(公告)日：2020-08-13
申请号：US16631520
申请日：2018-06-13
申请人： HAMAMATSU PHOTONICS K.K.
发明人： Tomonori NAKAMURA , Motohiro SUYAMA , Hironori TAKAHASHI
IPC分类号： H01L21/66 , G01R31/311 , H01L31/18 , H01L31/08
摘要： There is provided a semiconductor manufacturing method capable of coping with an increase in the density of an integrated circuit.A semiconductor manufacturing method according to one aspect of the present invention includes: a step of forming a memory cell, a photodiode that outputs an electrical signal corresponding to an input optical signal, and a signal processing circuit that generates a logic signal based on the electrical signal output from the photodiode and outputs the logic signal to the memory cell, so as to correspond to each chip forming region of a wafer having a plurality of chip forming regions; a step of inputting pump light for checking an operation of the memory cell to the photodiode and inspecting an operation state of the memory cell after the forming step; and a step of performing dicing for each of the chip forming regions after the inspection step.

27. 发明申请

US20200176339A1 SEMICONDUCTOR WAFER 审中-公开
公开(公告)号：US20200176339A1
公开(公告)日：2020-06-04
申请号：US16631507
申请日：2018-06-13
申请人： HAMAMATSU PHOTONICS K.K.
发明人： Motohiro SUYAMA , Hironori TAKAHASHI , Tomonori NAKAMURA
IPC分类号： H01L21/66 , G01R31/28 , H01L31/08
摘要： There is provided a semiconductor wafer suitable for the inspection of an operation state.A wafer is a semiconductor wafer having a plurality of chip forming regions, and includes a memory cell that is formed in each of the chip forming regions and an inspection device that is formed outside each of the chip forming regions. The inspection device has a photodiode that receives an input of pump light for checking an operation of the memory cell and outputs an electrical signal corresponding to the pump light and a signal processing circuit that generates a logic signal based on the electrical signal output from the photodiode and outputs the logic signal to the memory cell.

28. 发明申请

US20180144914A1 METHOD OF MANUFACTURING ELECTRON MULTIPLIER BODY, PHOTOMULTIPLIER TUBE, AND PHOTOMULTIPLIER 审中-公开
公开(公告)号：US20180144914A1
公开(公告)日：2018-05-24
申请号：US15858600
申请日：2017-12-29
申请人： HAMAMATSU PHOTONICS K.K.
发明人： Motohiro SUYAMA , Hiroshi KOBAYASHI , Shinya HATTORI
IPC分类号： H01J43/10 , B32B3/00 , B32B9/00 , B32B9/04 , C23C14/00 , H01J9/12 , H01J43/16 , H01J43/24
CPC分类号： H01J43/10 , B32B3/00 , B32B9/005 , B32B9/04 , B32B2457/20 , C23C14/00 , C23C16/45555 , H01J9/125 , H01J43/16 , H01J43/24
摘要： A method of manufacturing an electron multiplier body, the method includes a step of preparing a first plate-like member having a surface and a back surface and a pair of second plate-like members, a step of forming, in the first plate-like member, a hole portion reaching from the front surface to the back surface, a step of constituting a laminated body by laminating the first and second plate-like members on each other so that the first plate-like member is interposed between the pair of second plate-like members to form a channel defined by the hole portion in the laminated body, a step of integrating the laminated body, a step of constituting a main body portion by cutting the integrated laminated body so that the channel is open, and a step of forming a resistive layer and a secondary electron multiplication layer on an inner surface of the channel.

29. 发明申请

US20160260593A1 ELECTRON MULTIPLIER BODY, PHOTOMULTIPLIER TUBE, AND PHOTOMULTIPLIER 有权
标题翻译：电子多媒体机身，光电管和照相机
公开(公告)号：US20160260593A1
公开(公告)日：2016-09-08
申请号：US15058199
申请日：2016-03-02
申请人： HAMAMATSU PHOTONICS K.K.
发明人： Shinya HATTORI , Motohiro SUYAMA , Hiroshi KOBAYASHI
IPC分类号： H01J43/16
CPC分类号： H01J43/16 , H01J43/24
摘要： An electron multiplier body including a main body portion, an electron incidence portion, and a channel, in which the channel includes a first inner surface and a second inner surface facing each other, the first inner surface includes a convex first bent portion and a concave second bent portion, and a plurality of first inclined surfaces, the second inner surface includes a convex third bent portion and a concave fourth bent portion, and a plurality of second inclined surfaces, and an interval between a tip of the first bent portion and a tip of the third bent portion, a distance between the first inclined surface and the second inclined surfaces facing each other, an angle between a pair of first inclined surfaces defining the first bent portion, and a length of the channel satisfy predetermined expressions.
摘要翻译：一种电子倍增器体，包括主体部分，电子入射部分和沟道，其中沟道包括彼此面对的第一内表面和第二内表面，第一内表面包括凸起的第一弯曲部分和凹部第二弯曲部分和多个第一倾斜表面，所述第二内表面包括凸起的第三弯曲部分和凹入的第四弯曲部分，以及多个第二倾斜表面，并且所述第一弯曲部分的尖端和所述第三弯曲部的前端，所述第一倾斜面与所述第二倾斜面之间的距离彼此相对，所述一对限定所述第一弯曲部的第一倾斜面与所述通道的长度之间的角度满足预定的表达。

30. 发明申请

US20130112853A1 SOLID-STATE IMAGING DEVICE 有权
标题翻译：固态成像装置
公开(公告)号：US20130112853A1
公开(公告)日：2013-05-09
申请号：US13666098
申请日：2012-11-01
申请人： Hamamatsu Photonics K.K.
发明人： Motohiro SUYAMA , Akiomi UJIMA , Kentaro MAETA , Hisanori SUZUKI , Masaharu MURAMATSU , Fumio IWASE
IPC分类号： H01L27/148
CPC分类号： H01L27/14843 , H04N3/1525 , H04N3/1537 , H04N5/3722
摘要： A solid-state imaging device 1A includes a CCD-type solid-state imaging element 10 having an imaging plane 12 formed of M×N pixels that are two-dimensionally arrayed in M rows and N columns, N signal readout circuits 20 arranged on one end side in the column direction for each of the columns with respect to the imaging plane 12, and N signal readout circuits 30 arranged on the other end side in the column direction for each of the columns with respect to the imaging plane 12, a semiconductor element 50 for digital-converting and then sequentially outputting as serial signals electrical signals output from the signal readout circuits 20 for each of the columns, and a semiconductor element 60 for digital-converting and then sequentially outputting as serial signals electrical signals output from the signal readout circuits 30 for each of the columns.
摘要翻译：固态成像装置1A包括CCD型固体摄像元件10，其具有由M×N个像素形成的成像面12，二维排列成M行N列，N个信号读出电路20配置在一个相对于成像面12的各列的列方向的端侧，以及相对于摄像面12对于列的列方向配置在另一端侧的N个信号读出电路30，半导体元件50，用于数字转换，然后顺序地输出作为串行信号从每个列的信号读出电路20输出的电信号;以及半导体元件60，用于数字转换，然后顺序地输出作为串行信号从信号输出的电信号每列的读出电路30。

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