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    • 26. 发明申请
    • R-T-B SINTERED MAGNET
    • R-T-B烧结磁铁
    • US20130293328A1
    • 2013-11-07
    • US13980133
    • 2012-01-19
    • Futoshi Kuniyoshi
    • Futoshi Kuniyoshi
    • H01F1/053
    • H01F1/0536B22F3/24C22C33/0278C22C38/00C22C38/005H01F1/0577H01F41/0293
    • This sintered R-T-B based rare-earth magnet includes: R2Fe14B type compound crystal grains, including a light rare-earth element RL (which includes at least one of Nd and Pr) as a major rare-earth element R, as main phases; and a heavy rare-earth element RH (which includes at least one of Dy and Tb). Before its surface region is removed, the sintered R-T-B based rare-earth magnet has no layer including the rare-earth element R at a high concentration in that surface region. The sintered R-T-B based rare-earth magnet has a portion in which coercivity decreases gradually from its surface region toward its core portion. The difference in the amount of TRE between a portion of the sintered R-T-B based rare-earth magnet that reaches a depth of 500 μm as measured from its surface region toward its core portion and the core portion of the sintered R-T-B based rare-earth magnet is 0.1 through 1.0.
    • 这种烧结的R-T-B系稀土类磁铁包括:作为主要的稀土元素R的稀土类元素RL(包括Nd和Pr中的至少一种)的R2Fe14B型复合晶粒, 和重稀土元素RH(其包括Dy和Tb中的至少一种)。 在除去表面区域之前,烧结的R-T-B系稀土类磁铁在该表面区域中没有含有高浓度的稀土类元素R的层。 烧结的R-T-B类稀土类磁体具有矫顽力从其表面区域向其芯部逐渐减小的部分。 从其表面区域向其芯部测量达到深度为500μm的烧结RTB型稀土类磁体的一部分与RTB型稀土类烧结体的核心部分之间的TRE量的差异为 0.1至1.0。
    • 27. 发明申请
    • R-T-B SINTERED MAGNET MANUFACTURING METHOD
    • R-T-B烧结磁铁制造方法
    • US20130171342A1
    • 2013-07-04
    • US13823153
    • 2011-09-29
    • Futoshi Kuniyoshi
    • Futoshi Kuniyoshi
    • H01F41/00
    • H01F41/005C22C38/005C22C38/06C22C38/10C22C38/16C22C38/32C22C2202/02H01F1/0577H01F41/0293
    • [Problem] To provide a heavy rare-earth element RH diffusion process that contributes greatly to mass production.[Solution] A method for producing a sintered magnet includes the steps of: providing a sintered R-T-B based magnet body; providing an RH diffusion source which is made of at least one of a fluoride, an oxide and an oxyfluoride that each include Dy and/or Tb; loading the sintered R-T-B based magnet body and the RH diffusion source into a process chamber so that the magnet body and the diffusion source are movable relative to each other and are readily brought close to, or into contact with, each other; and performing an RH diffusion process in which the sintered R-T-B based magnet body and the RH diffusion source are heated to a processing temperature of 800° C. through 950° C. while being moved either continuously or discontinuously in the process chamber.
    • [问题]提供重质量的稀土元素RH扩散工艺,其大大有利于批量生产。 [解决方案]烧结磁体的制造方法包括以下工序:提供烧结的R-T-B系磁体; 提供由包含Dy和/或Tb的氟化物,氧化物和氟氧化物中的至少一种制成的RH扩散源; 将烧结的R-T-B基磁体和RH扩散源装载到处理室中,使得磁体和扩散源相对于彼此可移动并且容易彼此接近或接触; 并且在处理室中连续地或不连续地移动时,将烧结的R-T-B系磁体和RH扩散源加热到800℃〜950℃的RH扩散处理。
    • 28. 发明申请
    • METHOD FOR PRODUCING R-T-B-BASED SINTERED MAGNETS
    • 用于生产基于R-T-B的烧结磁体的方法
    • US20130087248A1
    • 2013-04-11
    • US13805466
    • 2011-07-12
    • Futoshi Kuniyoshi
    • Futoshi Kuniyoshi
    • H01F41/02H01F7/02
    • H01F41/0293B22F3/24C22C1/02C22C27/00C22C33/0278C22C38/00C22C38/005H01F1/0577H01F7/02
    • A method for producing a sintered R-T-B based magnet includes the steps of: providing a sintered R-T-B based magnet body 1; providing an RH diffusion source including a heavy rare-earth element RH (which is at least one of Dy and Tb) and 30 mass % to 80 mass % of Fe; loading the sintered R-T-B based magnet body 1 and the RH diffusion source 2 into a processing chamber 3 so that the magnet body 1 and the diffusion source 2 are movable relative to each other and are readily brought close to, or in contact with, each other; and performing an RH diffusion process in which the sintered magnet body 1 and the RH diffusion source 2 are heated to a processing temperature of more than 850° C. through 1000° C. while being moved either continuously or discontinuously in the processing chamber.
    • 制造R-T-B系烧结磁体的方法包括以下步骤:提供R-T-B系烧结磁体1; 提供包括重稀土元素RH(其为Dy和Tb中的至少一种)和30质量%至80质量%的Fe的RH扩散源; 将烧结的RTB基磁体1和RH扩散源2加载到处理室3中,使得磁体1和扩散源2可相对于彼此移动并且容易彼此接近或接触 ; 并且在处理室中连续地或不连续地移动时,进行将烧结磁体1和RH扩散源2加热到850℃以上1000℃以下的加工温度的RH扩散工序。