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21. 发明授权

US06721346B2 Solid state laser apparatus 失效
标题翻译：固态激光装置
公开(公告)号：US06721346B2
公开(公告)日：2004-04-13
申请号：US09883956
申请日：2001-06-20
申请人： Yoko Inoue , Shuichi Fujikawa , Keisuke Furuta
发明人： Yoko Inoue , Shuichi Fujikawa , Keisuke Furuta
IPC分类号： H01S3091
CPC分类号： H01S3/0941 , H01S3/094057 , H01S3/094076 , H01S3/09408 , H01S3/1024 , H01S3/1028 , H01S5/06216 , H01S5/0622
摘要： A solid state laser excited by a semiconductor laser can generate a stable and highly efficient high power laser beam. The laser apparatus includes a solid state laser element containing an active medium, a semiconductor laser for optically exciting the solid state laser element, a power supply for supplying pulses of current having magnitudes that change with time during each pulse to the semiconductor laser, and an optical resonator for emission of a laser beam from the solid state laser element. When the semiconductor laser is driven with the pulses that change in magnitude during each pulse, it produces pulsed excitation light that excites the solid state laser element. A stable laser beam is produced because changes in thermally sensitive light-generating parameters of the semiconductor laser are compensated.
摘要翻译：由半导体激光器激发的固态激光器可以产生稳定且高效的高功率激光束。该激光装置包括：含有活性介质的固体激光元件，用于光学激发固体激光元件的半导体激光器;用于在每个脉冲期间向半导体激光器供给具有随时间变化的大小的电流脉冲的电源;以及用于从固体激光元件发射激光束的光学谐振器。当半导体激光器以每个脉冲内的幅度变化的脉冲驱动时，产生激发固态激光元件的脉冲激发光。由于半导体激光器的热敏光产生参数的变化被补偿，所以产生稳定的激光束。

22. 发明授权

US5502331A Semiconductor substrate containing bulk micro-defect 失效
标题翻译：含有大量微缺陷的半导体衬底
公开(公告)号：US5502331A
公开(公告)日：1996-03-26
申请号：US444892
申请日：1995-05-19
申请人： Yoko Inoue , Shuichi Samata
发明人： Yoko Inoue , Shuichi Samata
IPC分类号： H01L21/322 , H01L29/16 , H01L29/30 , H01L29/167
CPC分类号： H01L21/3225 , H01L29/16
摘要： The semiconductor substrate is manufactured by growing a semiconductor crystal in accordance with CZ method; forming a substrate from the semiconductor crystal; and heat treating the formed substrate at 1150.degree. C. or higher for 30 min or longer in non-oxidizing atmosphere (e.g., 1200.degree. C. for 1 hour in hydrogen gas). In the formed wafer, the density of bulk micro-defects is 5.times.10.sup.2 to 5.times.10.sup.6 pieces per cm.sup.-3 in the surface area, but 5.times.10.sup.7 pieces per cm.sup.-3 or more in an 20 .mu.m or deeper from the surface. To confirm the depth profile of BMD density, the substrate is further heat treated at 780.degree. C. for 3 hours in oxygen atmosphere and successively at 1000.degree. C. for 16 hours in oxygen atmosphere.
摘要翻译：通过根据CZ方法生长半导体晶体来制造半导体衬底; 从半导体晶体形成衬底; 在非氧化性气氛（例如1200℃，氢气1小时）中，在1150℃以上进行30分钟以上的热处理。在形成的晶片中，体积微缺陷的密度在表面积为5×102〜5×10 6个/ cm -3，而在表面为20μm或更深的5×10 7个/ cm -3以上。为了确认BMD密度的深度分布，将基底在氧气氛中在780℃下进一步热处理3小时，并在氧气氛中在1000℃下依次进行16小时热处理。

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