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21. 发明授权

US08071429B1 Wafer dicing using scribe line etch 有权
标题翻译：使用划线蚀刻的晶片切割
公开(公告)号：US08071429B1
公开(公告)日：2011-12-06
申请号：US12954151
申请日：2010-11-24
申请人： Yin Qian , Hsin-Chih Tai , Duli Mao , Vincent Venezia , Wei Zheng , Keh-Chiang Ku , Howard E. Rhodes
发明人： Yin Qian , Hsin-Chih Tai , Duli Mao , Vincent Venezia , Wei Zheng , Keh-Chiang Ku , Howard E. Rhodes
IPC分类号： H01L21/304
CPC分类号： H01L21/78 , H01L27/14632 , H01L27/1464 , H01L27/14687
摘要： Embodiments of a method for separating dies from a wafer having first and second sides. The process embodiment includes masking the first side of the wafer, the mask including openings therein to expose parts of the first side substantially aligned with scribe lines of the wafer. The process embodiment also includes etching from the exposed parts of the first side of the wafer until an intermediate position between the first and second sides and sawing the remainder of the wafer, starting from the intermediate position until reaching the second surface.
摘要翻译：用于从具有第一和第二侧的晶片分离模具的方法的实施例。该工艺实施例包括掩蔽晶片的第一侧，掩模包括其中的开口，以暴露基本上与晶片划线对齐的第一侧的部分。工艺实施例还包括从晶片的第一侧的暴露部分进行蚀刻，直到第一和第二面之间的中间位置，并从中间位置开始到达第二表面，锯切晶片的其余部分。

22. 发明申请

US20110241090A1 HIGH FULL-WELL CAPACITY PIXEL WITH GRADED PHOTODETECTOR IMPLANT 有权
标题翻译：具有分级光电转换器的高全能容量像素
公开(公告)号：US20110241090A1
公开(公告)日：2011-10-06
申请号：US12755088
申请日：2010-04-06
申请人： Duli Mao , Hsin-Chih Tai , Vincent Venezia , Yin Qian , Howard E. Rhodes
发明人： Duli Mao , Hsin-Chih Tai , Vincent Venezia , Yin Qian , Howard E. Rhodes
IPC分类号： H01L31/112 , H01L21/66
CPC分类号： H01L27/14689 , H01L21/26586 , H01L27/1464 , H01L27/14643 , H04N5/378
摘要： Embodiments of a process for forming a photodetector region in a CMOS pixel by dopant implantation, the process comprising masking a photodetector area of a surface of a substrate for formation of the photodetector region, positioning the substrate at a plurality of twist angles, and at each of the plurality of twist angles, directing dopants at the photodetector area at a selected tilt angle. Embodiments of a CMOS pixel comprising a photodetector region formed in a substrate, the photodetector region comprising overlapping first and second dopant implants, wherein the overlap region has a different dopant concentration than the non-overlapping parts of the first and second implants, a floating diffusion formed in the substrate, and a transfer gate formed on the substrate between the photodetector and the transfer gate. Other embodiments are disclosed and claimed.
摘要翻译：用于通过掺杂剂注入在CMOS像素中形成光电检测器区域的方法的实施例，该方法包括掩蔽用于形成光电检测器区域的基板的表面的光电检测器区域，将基板定位在多个扭曲角度在多个扭转角度中，以选定的倾斜角将光电探测器区域上的掺杂剂引导。 CMOS像素的实施例包括形成在衬底中的光电检测器区域，所述光电检测器区域包括重叠的第一和第二掺杂剂注入，其中所述重叠区域具有与所述第一和第二植入物的非重叠部分不同的掺杂剂浓度，形成在基板上，以及形成在光电检测器和传输门之间的基板上的传输门。公开和要求保护其他实施例。

23. 发明授权

US07888215B2 CMOS image sensor with high full-well-capacity 有权
标题翻译：具有高全容量容量的CMOS图像传感器
公开(公告)号：US07888215B2
公开(公告)日：2011-02-15
申请号：US12133217
申请日：2008-06-04
申请人： Duli Mao , Hsin-Chih Tai , Vincent Venezia , Yin Qian , Howard E. Rhodes
发明人： Duli Mao , Hsin-Chih Tai , Vincent Venezia , Yin Qian , Howard E. Rhodes
IPC分类号： H01L21/336
CPC分类号： H01L31/03529 , H01L27/14603 , H01L27/14612 , H01L27/14689 , Y02E10/50
摘要： An image sensor with a high full-well capacity includes a photosensitive region, a transfer gate, and sidewall spacers. The photosensitive region is formed to accumulate an image charge in response to light. The transfer gate disposed adjacent to the photosensitive region and coupled to selectively transfer the image charge from the photosensitive region to other pixel circuitry. First and second sidewall spacers are disposed on either side of the transfer gate. The first sidewall spacer closest to the photosensitive region is narrower than the second sidewall spacer. In some cases, the first sidewall spacer may be omitted.
摘要翻译：具有高全阱容量的图像传感器包括光敏区域，转移栅极和侧壁间隔物。光敏区域形成为响应于光积累图像电荷。所述传输栅极邻近所述光敏区域设置并耦合以选择性地将所述图像电荷从所述感光区域传送到其它像素电路。第一和第二侧壁间隔件设置在传送门的两侧。最靠近感光区域的第一侧壁隔离物比第二侧壁间隔物窄。在一些情况下，可以省略第一侧壁间隔物。

24. 发明申请

US20100123069A1 BACKSIDE ILLUMINATED IMAGING SENSOR WITH IMPROVED ANGULAR RESPONSE 有权
标题翻译：具有改进角度响应的背面照明成像传感器
公开(公告)号：US20100123069A1
公开(公告)日：2010-05-20
申请号：US12272677
申请日：2008-11-17
申请人： Duli Mao , Vincent Venezia , Hsin-Chih Tai , Yin Qian , Howard E. Rhodes
发明人： Duli Mao , Vincent Venezia , Hsin-Chih Tai , Yin Qian , Howard E. Rhodes
IPC分类号： H01L31/00 , H01L21/00
CPC分类号： H01L27/14603 , H01L27/14605 , H01L27/14629 , H01L27/1463 , H01L27/1464 , H01L27/14643 , H01L27/14683 , H01L27/14689
摘要： A backside illuminated imaging pixel with improved angular response includes a semiconductor layer having a front and a back surface. The imaging pixel also includes a photodiode region formed in the semiconductor layer. The photodiode region includes a first and a second n-region. The first n-region has a centerline projecting between the front and back surfaces of the semiconductor layer. The second n-region is disposed between the first n-region and the back surface of the semiconductor layer such that the second n-region is offset from the centerline of the first n-region.
摘要翻译：具有改进的角度响应的背面照明成像像素包括具有前表面和后表面的半导体层。成像像素还包括形成在半导体层中的光电二极管区域。光电二极管区域包括第一和第二n区域。第一n区具有在半导体层的前表面和后表面之间突出的中心线。第二n区设置在半导体层的第一n区和背表面之间，使得第二n区偏离第一n区的中心线。

25. 发明申请

US20090267070A1 Multilayer image sensor structure for reducing crosstalk 有权
标题翻译：用于减少串扰的多层图像传感器结构
公开(公告)号：US20090267070A1
公开(公告)日：2009-10-29
申请号：US12109134
申请日：2008-04-24
申请人： Vincent Venezia , Hidetoshi Nozaki , Duli Mao , Yin Qian , Hsin-Chih Tai , Howard E. Rhodes
发明人： Vincent Venezia , Hidetoshi Nozaki , Duli Mao , Yin Qian , Hsin-Chih Tai , Howard E. Rhodes
IPC分类号： H01L31/0216
CPC分类号： H01L27/1463 , H01L27/14603 , H01L27/14609 , H01L27/14627 , H01L27/14632 , H01L31/035281
摘要： An image sensor pixel includes a substrate, an epitaxial layer, and a light collection region. The substrate is doped to have a first conductivity type. The epitaxial layer is disposed over the substrate and doped to have a second conductivity type opposite of the first conductivity type. The light collection region is disposed within the epitaxial layer for collecting photo-generated charge carriers. The light collection region is doped to have the first conductivity type as well.
摘要翻译：图像传感器像素包括基板，外延层和光收集区域。衬底被掺杂以具有第一导电类型。外延层设置在衬底上并掺杂以具有与第一导电类型相反的第二导电类型。光收集区域设置在用于收集光生电荷载流子的外延层内。光收集区域也被掺杂以具有第一导电类型。

26. 发明申请

US20130113065A1 PAD DESIGN FOR CIRCUIT UNDER PAD IN SEMICONDUCTOR DEVICES 有权
标题翻译：用于在半导体器件中的电路下的电路的PAD设计
公开(公告)号：US20130113065A1
公开(公告)日：2013-05-09
申请号：US13288731
申请日：2011-11-03
申请人： Yin Qian , Hsin-Chih Tai , Keh-Chiang Ku , Vincent Venezia , Duli Mao , Wei Zheng , Howard E. Rhodes
发明人： Yin Qian , Hsin-Chih Tai , Keh-Chiang Ku , Vincent Venezia , Duli Mao , Wei Zheng , Howard E. Rhodes
IPC分类号： H01L31/0216 , H01L21/768 , H01L31/02
CPC分类号： H01L23/481 , H01L21/6835 , H01L23/522 , H01L24/05 , H01L27/14636 , H01L27/1464 , H01L2221/6835 , H01L2224/05548 , H01L2224/05553 , H01L2224/05567 , H01L2924/00014 , H01L2924/12043 , H01L2224/05552 , H01L2924/00
摘要： Embodiments of a semiconductor device that includes a semiconductor substrate and a cavity disposed in the semiconductor substrate that extends at least from a first side of the semiconductor substrate to a second side of the semiconductor substrate. The semiconductor device also includes an insulation layer disposed over the first side of the semiconductor substrate and coating sidewalls of the cavity. A conductive layer including a bonding pad is disposed over the insulation layer. The conductive layer extends into the cavity and connects to a metal stack disposed below the second side of the semiconductor substrate. A through silicon via pad is disposed below the second side of the semiconductor substrate and connected to the metal stack. The through silicon via pad is position to accept a through silicon via.
摘要翻译：半导体器件的实施例包括半导体衬底和设置在半导体衬底中的至少从半导体衬底的第一侧至半导体衬底的第二侧延伸的空腔。半导体器件还包括设置在半导体衬底的第一侧上并涂覆空腔的侧壁的绝缘层。包括接合焊盘的导电层设置在绝缘层上。导电层延伸到空腔中并且连接到设置在半导体衬底的第二侧下方的金属叠层。贯穿硅通孔焊盘设置在半导体衬底的第二侧下方并连接到金属堆叠。贯穿硅通孔焊盘的位置是接受硅通孔。

27. 发明申请

US20120018620A1 BACKSIDE ILLUMINATED IMAGING SENSOR WITH VERTICAL PIXEL SENSOR 有权
标题翻译：背景照明成像传感器与垂直像素传感器
公开(公告)号：US20120018620A1
公开(公告)日：2012-01-26
申请号：US13250237
申请日：2011-09-30
申请人： Yin Qian , Hsin-Chih Tai , Duli Mao , Vincent Venezia , Howard E. Rhodes
发明人： Yin Qian , Hsin-Chih Tai , Duli Mao , Vincent Venezia , Howard E. Rhodes
IPC分类号： H01L27/146 , H01L31/0232
CPC分类号： H01L27/14647 , H01L27/14621 , H01L27/14627 , H01L27/1464
摘要： A backside illuminated imaging sensor includes a vertical stacked sensor that reduces cross talk by using different silicon layers to form photodiodes at separate levels within a stack (or separate stacks) to detect different colors. Blue light-, green light-, and red light-detection silicon layers are formed, with the blue light detection layer positioned closest to the backside of the sensor and the red light detection layer positioned farthest from the backside of the sensor. An anti-reflective coating (ARC) layer can be inserted in between the red and green light detection layers to reduce the optical cross talk captured by the red light detection layer. Amorphous polysilicon can be used to form the red light detection layer to boost the efficiency of detecting red light.
摘要翻译：背面照明成像传感器包括垂直堆叠传感器，其通过使用不同的硅层在堆叠（或单独的堆叠）内的不同级别形成光电二极管来减少串扰，以检测不同的颜色。形成蓝光，绿光和红光检测硅层，蓝光检测层位于最靠近传感器背面的位置，红光检测层位于离传感器背面最远的位置。可以在红色和绿色光检测层之间插入抗反射涂层（ARC）层，以减少由红光检测层捕获的光学交叉对话。可以使用非晶多晶硅来形成红光检测层，以提高检测红光的效率。

28. 发明授权

US07948018B2 Multilayer image sensor structure for reducing crosstalk 有权
标题翻译：用于减少串扰的多层图像传感器结构
公开(公告)号：US07948018B2
公开(公告)日：2011-05-24
申请号：US12109134
申请日：2008-04-24
申请人： Vincent Venezia , Hidetoshi Nozaki , Duli Mao , Yin Qian , Hsin-Chih Tai , Howard E. Rhodes
发明人： Vincent Venezia , Hidetoshi Nozaki , Duli Mao , Yin Qian , Hsin-Chih Tai , Howard E. Rhodes
IPC分类号： H01L31/062
CPC分类号： H01L27/1463 , H01L27/14603 , H01L27/14609 , H01L27/14627 , H01L27/14632 , H01L31/035281
摘要： An image sensor pixel includes a substrate, an epitaxial layer, and a light collection region. The substrate is doped to have a first conductivity type. The epitaxial layer is disposed over the substrate and doped to have a second conductivity type opposite of the first conductivity type. The light collection region is disposed within the epitaxial layer for collecting photo-generated charge carriers. The light collection region is doped to have the first conductivity type as well.
摘要翻译：图像传感器像素包括基板，外延层和光收集区域。衬底被掺杂以具有第一导电类型。外延层设置在衬底上并掺杂以具有与第一导电类型相反的第二导电类型。光收集区域设置在用于收集光生电荷载流子的外延层内。光收集区域也被掺杂以具有第一导电类型。

29. 发明申请

US20110115002A1 BACKSIDE ILLUMINATED IMAGING SENSOR WITH REINFORCED PAD STRUCTURE 有权
标题翻译：具有加强垫片结构的背面照明成像传感器
公开(公告)号：US20110115002A1
公开(公告)日：2011-05-19
申请号：US12620437
申请日：2009-11-17
申请人： Hsin-Chih Tai , Howard E. Rhodes , Duli Mao , Vincent Venezia , Yin Qian
发明人： Hsin-Chih Tai , Howard E. Rhodes , Duli Mao , Vincent Venezia , Yin Qian
IPC分类号： H01L31/14 , H01L31/18
CPC分类号： H01L24/05 , H01L27/14636 , H01L27/1464 , H01L27/14683 , H01L2224/02165 , H01L2224/04042 , H01L2224/05093 , H01L2224/05096 , H01L2224/05556 , H01L2224/05624 , H01L2224/05647 , H01L2224/05684 , H01L2924/00014 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01029 , H01L2924/01033 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327
摘要： A backside illuminated imaging sensor with reinforced pad structure includes a device layer, a metal stack, an opening and a frame. The device layer has an imaging array formed in a front side of the device layer and the imaging array is adapted to receive light from a back side of the device layer. The metal stack is coupled to the front side of the device layer where the metal stack includes at least one metal interconnect layer having a metal pad. The opening extends from the back side of the device layer to the metal pad to expose the metal pad for wire bonding. The frame is disposed within the opening to structurally reinforce the metal pad.
摘要翻译：具有加强垫结构的背面照明成像传感器包括器件层，金属叠层，开口和框架。器件层具有形成在器件层的前侧的成像阵列，并且成像阵列适于从器件层的背面接收光。金属叠层耦合到器件层的前侧，其中金属堆叠包括具有金属焊盘的至少一个金属互连层。开口从器件层的背面延伸到金属焊盘，露出用于引线接合的金属焊盘。框架设置在开口内以在结构上加强金属垫。

30. 发明申请

US20110085067A1 MULTILAYER IMAGE SENSOR PIXEL STRUCTURE FOR REDUCING CROSSTALK 有权
标题翻译：用于减少CROSSTALK的多层图像传感器像素结构
公开(公告)号：US20110085067A1
公开(公告)日：2011-04-14
申请号：US12967759
申请日：2010-12-14
申请人： Vincent Venezia , Ashish Shah , Rongsheng Yang , Duli Mao , Yin Qian , Hsin-Chih Tai , Howard E. Rhodes
发明人： Vincent Venezia , Ashish Shah , Rongsheng Yang , Duli Mao , Yin Qian , Hsin-Chih Tai , Howard E. Rhodes
IPC分类号： H04N5/335
CPC分类号： H01L27/1463 , H01L27/14601
摘要： An image sensor pixel includes a substrate, a first epitaxial layer, a collector layer, a second epitaxial layer and a light collection region. The substrate is doped to have a first conductivity type. The first epitaxial layer is disposed over the substrate and doped to have the first conductivity type as well. The collector layer is selectively disposed over at least a portion of the first epitaxial layer and doped to have a second conductivity type. The second epitaxial layer is disposed over the collector layer and doped to have the first conductivity type. The light collection region collects photo-generated charge carriers and is disposed within the second epitaxial layer. The light collection region is also doped to have the second conductivity type.
摘要翻译：图像传感器像素包括基板，第一外延层，集电极层，第二外延层和光收集区域。衬底被掺杂以具有第一导电类型。第一外延层设置在衬底上并掺杂以具有第一导电类型。集电极层选择性地设置在第一外延层的至少一部分上并被掺杂以具有第二导电类型。第二外延层设置在集电极层上并掺杂以具有第一导电类型。光收集区域收集光生电荷载流子并且设置在第二外延层内。光收集区域也被掺杂以具有第二导电类型。

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