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21. 发明申请

US20130341677A1 GAN VERTICAL SUPERJUNCTION DEVICE STRUCTURES AND FABRICATION METHODS 有权
标题翻译： GAN垂直超导装置结构和制造方法
公开(公告)号：US20130341677A1
公开(公告)日：2013-12-26
申请号：US13529822
申请日：2012-06-21
申请人： Hui Nie , Donald R. Disney , Andrew P. Edwards , Isik C. Kizilyalli
发明人： Hui Nie , Donald R. Disney , Andrew P. Edwards , Isik C. Kizilyalli
IPC分类号： H01L27/088 , H01L21/8234
CPC分类号： H01L21/0254 , H01L21/02664 , H01L21/8252 , H01L27/0605 , H01L29/0657 , H01L29/7786 , Y10S438/978
摘要： A semiconductor device includes a III-nitride substrate of a first conductivity type, a first III-nitride epitaxial layer of the first conductivity type coupled to the III-nitride substrate, and a first III-nitride epitaxial structure coupled to a first portion of a surface of the first III-nitride epitaxial layer. The first III-nitride epitaxial structure has a sidewall. The semiconductor device further includes a second III-nitride epitaxial structure of the first conductivity type coupled to the first III-nitride epitaxial structure, a second III-nitride epitaxial layer of the first conductivity type coupled to the sidewall of the second III-nitride epitaxial layer and a second portion of the surface of the first III-nitride epitaxial layer, and a third III-nitride epitaxial layer of a second conductivity type coupled to the second III-nitride epitaxial layer. The semiconductor device also includes one or more dielectric structures coupled to a surface of the third III-nitride epitaxial layer.
摘要翻译：半导体器件包括第一导电类型的III族氮化物衬底，耦合到III族氮化物衬底的第一导电类型的第一III族氮化物外延层和耦合到第一III族氮化物外延结构的第一部分第一III族氮化物外延层的表面。第一III族氮化物外延结构具有侧壁。半导体器件还包括耦合到第一III族氮化物外延结构的第一导电类型的第二III族氮化物外延结构，第一导电类型的第二III族氮化物外延层耦合到第二III族氮化物外延的侧壁层和第一III族氮化物外延层的表面的第二部分，以及耦合到第二III族氮化物外延层的第二导电类型的第三III族氮化物外延层。半导体器件还包括耦合到第三III族氮化物外延层的表面的一个或多个电介质结构。

22. 发明授权

US08513087B2 Processes for forming isolation structures for integrated circuit devices 有权
标题翻译：用于形成用于集成电路器件的隔离结构的工艺
公开(公告)号：US08513087B2
公开(公告)日：2013-08-20
申请号：US13095019
申请日：2011-04-27
申请人： Donald R. Disney , Richard K. Williams
发明人： Donald R. Disney , Richard K. Williams
IPC分类号： H01L21/76
CPC分类号： H01L21/76243 , H01L21/76267 , H01L21/763 , H01L21/823878 , H01L21/823892 , H01L29/1004 , H01L29/41708 , H01L29/732
摘要： Processes for forming isolation structures for semiconductor devices include forming a submerged floor isolation region and a filed trench which together enclose an isolated pocket of the substrate. One process aligns the trench to the floor isolation region. In another process a second, narrower trench is formed in the isolated pocket and filled with a dielectric material while the dielectric material is deposited so as to line the walls and floor of the first trench. The substrate does not contain an epitaxial layer, thereby overcoming the many problems associated with fabricating the same.
摘要翻译：用于形成用于半导体器件的隔离结构的工艺包括形成浸没的底部隔离区域和一起封装衬底的隔离袋状物的沟槽。一个过程将沟槽对准地板隔离区域。在另一种方法中，在隔离的袋中形成第二较窄的沟槽，并且填充介电材料，同时沉积电介质材料以便使第一沟槽的壁和底板成线。衬底不含有外延层，从而克服了与其制造相关的许多问题。

23. 发明申请

US20130032895A1 HIGH-VOLTAGE TRANSISTOR DEVICE AND ASSOCIATED METHOD FOR MANUFACTURING 有权
标题翻译：高压晶体管器件及相关制造方法
公开(公告)号：US20130032895A1
公开(公告)日：2013-02-07
申请号：US13195199
申请日：2011-08-01
申请人： Donald R. Disney , Ognjen Milic , Kun Yi
发明人： Donald R. Disney , Ognjen Milic , Kun Yi
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/7835 , H01L29/0847 , H01L29/1083 , H01L29/404 , H01L29/405 , H01L29/66659
摘要： A high-voltage transistor device comprises a spiral resistive field plate over a first well region between a drain region and a source region of the high-voltage transistor device, wherein the spiral resistive field plate is separated from the first well region by a first isolation layer, and is coupled between the drain region and the source region. The high-voltage transistor device further comprises a plurality of first field plates over the spiral resistive field plate with each first field plate covering one or more segments of the spiral resistive field plate, wherein the plurality of first field plates are isolated from the spiral resistive field plate by a first dielectric layer, and wherein the plurality of first field plates are isolated from each other, and a starting first field plate is connected to the source region.
摘要翻译：高压晶体管器件包括在高压晶体管器件的漏极区域和源极区域之间的第一阱区域上的螺旋电阻场板，其中螺旋电阻场板通过第一隔离与第一阱区域分离并且耦合在漏极区域和源极区域之间。高压晶体管器件还包括在螺旋电阻场板上的多个第一场板，每个第一场板覆盖螺旋电阻场板的一个或多个段，其中多个第一场板与螺旋电阻隔离并且其中所述多个第一场板彼此隔离，并且起始第一场板连接到所述源极区域。

24. 发明申请

US20120314453A1 ELECTRONIC CIRCUIT CONTROL ELEMENT WITH TAP ELEMENT 失效
标题翻译：带有元件的电子电路控制元件
公开(公告)号：US20120314453A1
公开(公告)日：2012-12-13
申请号：US13571209
申请日：2012-08-09
申请人： Donald R. Disney
发明人： Donald R. Disney
IPC分类号： H01L27/088 , H02M3/335
CPC分类号： H01L29/7803 , G05F1/14 , H01L29/0634 , H01L29/0653 , H01L29/0847 , H01L29/407 , H01L29/42368 , H01L29/7802 , H01L29/7813 , H02M1/36 , H02M3/335 , H02M3/33507 , H02M3/33553 , H02M3/33561 , H02M2001/0009
摘要： An example control element for use in a power supply includes a high-voltage transistor and a control circuit to control switching of the high-voltage transistor. The high-voltage transistor includes a drain region, source region, tap region, drift region, and tap drift region, all of a first conductivity type. The transistor also includes a body region of a second conductivity type. An insulated gate is included in the transistor such that when the insulated gate is biased a channel is formed across the body region to form a conduction path between the source region and the drift region. A voltage at the tap region with respect to the source region is substantially constant and less than a voltage at the drain region with respect to the source region in response to the voltage at the drain region exceeding a pinch off voltage.
摘要翻译：用于电源的示例性控制元件包括高压晶体管和用于控制高压晶体管的开关的控制电路。高压晶体管包括漏区，源区，抽头区，漂移区和抽头漂移区，全部为第一导电类型。晶体管还包括第二导电类型的体区。绝缘栅极包括在晶体管中，使得当绝缘栅极被偏置时，跨越体区域形成沟道以在源极区域和漂移区域之间形成传导路径。相对于源极区域的抽头区域处的电压基本上是恒定的，并且响应于漏极区域处的电压超过夹断电压而小于相对于源极区域的漏极区域处的电压。

25. 发明申请

US20110084333A1 POWER DEVICES WITH SUPER JUNCTIONS AND ASSOCIATED METHODS MANUFACTURING 有权
标题翻译：具有超级连接的功率器件和相关方法制造
公开(公告)号：US20110084333A1
公开(公告)日：2011-04-14
申请号：US12576150
申请日：2009-10-08
申请人： Donald R. Disney , Michael R. Hsing
发明人： Donald R. Disney , Michael R. Hsing
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/7802 , H01L21/2254 , H01L21/2256 , H01L29/0634 , H01L29/0649 , H01L29/0653 , H01L29/0878 , H01L29/66712
摘要： Power devices with super junctions and associated methods of manufacturing are disclosed herein. In one embodiment, a method for forming a power device includes forming an epitaxial layer on a substrate material and forming a trench in the epitaxial layer. The trench has a first sidewall, a second sidewall, and a bottom between the first and second sidewalls. The method also includes forming an insulation material on at least one of the first and second sidewalls of the trench and diffusing a dopant into the epitaxial layer via at least one of the first and second sidewalls of the trench via the insulation material.
摘要翻译：本文公开了具有超连接和相关制造方法的功率器件。在一个实施例中，形成功率器件的方法包括在衬底材料上形成外延层并在外延层中形成沟槽。沟槽具有第一侧壁，第二侧壁和位于第一和第二侧壁之间的底部。该方法还包括在沟槽的第一和第二侧壁中的至少一个上形成绝缘材料，并且经由绝缘材料经由沟槽的第一和第二侧壁中的至少一个将掺杂剂扩散到外延层中。

26. 发明申请

US20110062489A1 POWER DEVICE WITH SELF-ALIGNED SILICIDE CONTACT 审中-公开
标题翻译：具有自对准硅胶触点的电源装置
公开(公告)号：US20110062489A1
公开(公告)日：2011-03-17
申请号：US12557841
申请日：2009-09-11
申请人： Donald R. Disney , Ognjen Milic
发明人： Donald R. Disney , Ognjen Milic
IPC分类号： H01L29/739 , H01L29/78 , H01L21/82
CPC分类号： H01L29/7802 , H01L29/1095 , H01L29/41766 , H01L29/456 , H01L29/4933 , H01L29/66333 , H01L29/665 , H01L29/66719 , H01L29/66727 , H01L29/7395
摘要： An improved power device with a self-aligned suicide and a method for fabricating the device are disclosed. An example power device is a vertical power device that includes contacts formed on gate and body contact regions by an at least substantially self-aligned silicidation (e.g., salicide) process. The example device may also include one or more sidewall spacers that are each at least substantially aligned between edges of the gate region and the body contact region. The body contact region may also be implanted into the device in at least substantial self-alignment to the sidewall spacer. The method may also include an at least substantially self-aligned silicon etch.
摘要翻译：公开了一种具有自对准硅化物的改进的功率器件及其制造方法。示例性功率器件是垂直功率器件，其包括通过至少基本上自对准的硅化（例如自对准硅）工艺在栅极和体接触区域上形成的触点。示例性装置还可以包括一个或多个侧壁间隔件，每个侧壁间隔件至少基本上对准在栅极区域和主体接触区域的边缘之间。身体接触区域也可以以至少基本上与对侧隔离物自对准的方式植入到装置中。该方法还可以包括至少基本上自对准的硅蚀刻。

27. 发明授权

US07872304B2 Method and apparatus for controlling a circuit with a high voltage sense device 有权
标题翻译：用高压检测装置控制电路的方法和装置
公开(公告)号：US07872304B2
公开(公告)日：2011-01-18
申请号：US12688778
申请日：2010-01-15
申请人： Donald R. Disney
发明人： Donald R. Disney
IPC分类号： H01L21/8222
CPC分类号： H02M1/36 , H01L21/823493 , H01L27/088 , H01L29/0634 , H01L29/1066 , H01L29/1075 , H01L29/1087 , H01L29/402 , H01L29/7835 , H01L29/808 , H02M3/33507 , H03K17/0822
摘要： A control circuit with a high voltage sense device. In one embodiment, a circuit includes a first transistor disposed in a first substrate having first, second and third terminals. A first terminal of the first transistor is coupled to an external voltage. A voltage provided at a third terminal of the first transistor is substantially proportional to a voltage between the first and second terminals of the first transistor when the voltage between the first and second terminals of the first transistor is less than a pinch-off voltage of the first transistor. The voltage provided at the third terminal of the first transistor is substantially constant and less than the voltage between the first and second terminals of the first transistor when the voltage between the first and second terminals of the first transistor is greater than the pinch-off voltage of the first transistor. The circuit also includes a control circuit disposed in the first substrate and coupled to the third terminal of the first transistor. The circuit further includes a second transistor disposed in a second substrate. A first terminal of the second transistor coupled to the external voltage.
摘要翻译：具有高电压检测装置的控制电路。在一个实施例中，电路包括设置在具有第一，第二和第三端子的第一基板中的第一晶体管。第一晶体管的第一端子耦合到外部电压。当第一晶体管的第一和第二端子之间的电压小于第一晶体管的钳位电压时，设置在第一晶体管的第三端处的电压基本上与第一晶体管的第一和第二端子之间的电压成比例，第一晶体管。当第一晶体管的第一端和第二端之间的电压大于夹断电压时，在第一晶体管的第三端处提供的电压基本上恒定且小于第一晶体管的第一和第二端之间的电压的第一晶体管。电路还包括设置在第一基板中并耦合到第一晶体管的第三端子的控制电路。电路还包括设置在第二基板中的第二晶体管。第二晶体管的第一端子耦合到外部电压。

28. 发明申请

US20100133611A1 Isolated transistor 有权
标题翻译：隔离晶体管
公开(公告)号：US20100133611A1
公开(公告)日：2010-06-03
申请号：US12658020
申请日：2010-02-01
申请人： Donald R. Disney , Richard K. Williams
发明人： Donald R. Disney , Richard K. Williams
IPC分类号： H01L29/78
CPC分类号： H01L29/0638 , H01L21/26586 , H01L29/0615 , H01L29/0626 , H01L29/063 , H01L29/0653 , H01L29/0661 , H01L29/086 , H01L29/1045 , H01L29/105 , H01L29/1083 , H01L29/1087 , H01L29/41766 , H01L29/7809 , H01L29/7811 , H01L29/7835 , H01L29/808 , H01L29/8613 , H01L29/866 , H01L2924/0002 , H01L2924/00
摘要： A transistor is formed inside an isolation structure which includes a floor isolation region and a trench extending from the surface of the substrate to the floor isolation region. The trench may be filled with a dielectric material or may have a conductive material in a central portion with a dielectric layer lining the walls of the trench.
摘要翻译：晶体管形成在隔离结构内，该隔离结构包括底板隔离区域和从衬底表面延伸到地板隔离区域的沟槽。沟槽可以填充有介电材料，或者可以在中间部分具有导电材料，其中介电层衬在沟槽的壁上。

29. 发明申请

US20100117718A1 METHOD AND APPARATUS FOR CONTROLLING A CIRCUIT WITH A HIGH VOLTAGE SENSE DEVICE 有权
标题翻译：用于控制具有高电压感测器件的电路的方法和装置
公开(公告)号：US20100117718A1
公开(公告)日：2010-05-13
申请号：US12688778
申请日：2010-01-15
申请人： Donald R. Disney
发明人： Donald R. Disney
IPC分类号： H03K3/01
CPC分类号： H02M1/36 , H01L21/823493 , H01L27/088 , H01L29/0634 , H01L29/1066 , H01L29/1075 , H01L29/1087 , H01L29/402 , H01L29/7835 , H01L29/808 , H02M3/33507 , H03K17/0822
摘要： A control circuit with a high voltage sense device. In one embodiment, a circuit includes a first transistor disposed in a first substrate having first, second and third terminals. A first terminal of the first transistor is coupled to an external voltage. A voltage provided at a third terminal of the first transistor is substantially proportional to a voltage between the first and second terminals of the first transistor when the voltage between the first and second terminals of the first transistor is less than a pinch-off voltage of the first transistor. The voltage provided at the third terminal of the first transistor is substantially constant and less than the voltage between the first and second terminals of the first transistor when the voltage between the first and second terminals of the first transistor is greater than the pinch-off voltage of the first transistor. The circuit also includes a control circuit disposed in the first substrate and coupled to the third terminal of the first transistor. The circuit further includes a second transistor disposed in a second substrate. A first terminal of the second transistor coupled to the external voltage.
摘要翻译：具有高电压检测装置的控制电路。在一个实施例中，电路包括设置在具有第一，第二和第三端子的第一基板中的第一晶体管。第一晶体管的第一端子耦合到外部电压。当第一晶体管的第一和第二端子之间的电压小于第一晶体管的钳位电压时，设置在第一晶体管的第三端处的电压基本上与第一晶体管的第一和第二端子之间的电压成比例，第一晶体管。当第一晶体管的第一端和第二端之间的电压大于夹断电压时，在第一晶体管的第三端处提供的电压基本上恒定且小于第一晶体管的第一和第二端之间的电压的第一晶体管。电路还包括设置在第一基板中并耦合到第一晶体管的第三端子的控制电路。电路还包括设置在第二基板中的第二晶体管。第二晶体管的第一端子耦合到外部电压。

30. 发明申请

US20100072540A1 ELECTRONIC CIRCUIT CONTROL ELEMENT WITH TAP ELEMENT 有权
标题翻译：带有元件的电子电路控制元件
公开(公告)号：US20100072540A1
公开(公告)日：2010-03-25
申请号：US12626466
申请日：2009-11-25
申请人： Donald R. Disney
发明人： Donald R. Disney
IPC分类号： H01L29/78
CPC分类号： H01L29/7803 , G05F1/14 , H01L29/0634 , H01L29/0653 , H01L29/0847 , H01L29/407 , H01L29/42368 , H01L29/7802 , H01L29/7813 , H02M1/36 , H02M3/335 , H02M3/33507 , H02M3/33553 , H02M3/33561 , H02M2001/0009
摘要： A technique for controlling a power supply with power supply control element with a tap element. An example power supply control element includes a power transistor that has first and second main terminals, a control terminal and a tap terminal. A control circuit is coupled to the control terminal. The tap terminal and the second main terminal of the power transistor are to control switching of the power transistor. The tap terminal is coupled to provide a signal to the control circuit substantially proportional to a voltage between the first and second main terminals when the voltage is less than a pinch off voltage. The tap terminal is coupled to provide a substantially constant voltage that is less than the voltage between the first and second main terminals to the control circuit when the voltage between the first and second main terminals is greater than the pinch-off voltage.
摘要翻译：一种用电源控制元件与抽头元件控制电源的技术。示例性电源控制元件包括具有第一和第二主端子的功率晶体管，控制端子和抽头端子。控制电路耦合到控制终端。功率晶体管的抽头端子和第二主端子用于控制功率晶体管的开关。当电压小于夹断电压时，抽头端子被耦合以向控制电路提供基本上与第一和第二主端子之间的电压成比例的信号。当第一和第二主端子之间的电压大于夹断电压时，抽头端子被耦合以提供小于控制电路的第一和第二主端子之间的电压的基本恒定的电压。

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