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    • 21. 发明授权
    • Current mirror
    • 电流镜
    • US5598094A
    • 1997-01-28
    • US301867
    • 1994-09-06
    • Oliver KiehlRudolf Koch
    • Oliver KiehlRudolf Koch
    • G05F3/26G05F3/20
    • G05F3/26
    • A current mirror includes first through eighteenth transistors. The load paths of the first and second transistors are in series for carrying an input current to a first supply potential. The control terminals of the first through eighth transistors receive the input current. The load paths of the fourth, third, ninth and tenth transistors are in series between the first and a second supply potential. The third and ninth transistors form a tap being connected to the control terminals of the ninth, tenth, eleventh, twelfth and thirteenth transistors. The load paths of the fifth, sixth, eleventh and fourteenth transistors are in series between the first and second supply potentials. The sixth and eleventh transistors form a tap being connected to the control terminals of the fourteenth through sixteenth transistors. The load paths of the seventeenth, seventh, twelfth and fifteenth transistors are in series between the first and second supply potentials. The seventh and twelfth transistors form a tap being connected to the control terminals of the seventeenth and eighteenth transistors. The load paths of the eighteenth and eighth transistors are in series for tapping a first output current proportional to the input current from the first supply potential. The load paths of the sixteenth and thirteenth transistors are in series for tapping a second output current equal to the first from the second supply potential. The ninth through sixteenth transistors are of one, and the seventeenth, eighteenth and first through eighth transistors being of the other, conduction type.
    • 电流镜包括第一至第十八晶体管。 第一和第二晶体管的负载路径是串联的,用于将输入电流传送到第一电源电位。 第一至第八晶体管的控制端接收输入电流。 第四,第三,第九和第十晶体管的负载路径串联在第一和第二供电电位之间。 第三和第九晶体管形成连接到第九,十,十一,十二和十三个晶体管的控制端的抽头。 第五,第六,第十一和第十四晶体管的负载路径串联在第一和第二电源电位之间。 第六和第十六晶体管形成连接到第十四至第十六晶体管的控制端的抽头。 第十七,第十二,第十五和第十五晶体管的负载路径串联在第一和第二供电电位之间。 第七和第十二晶体管形成连接到第十七和第十八晶体管的控制端的抽头。 第十八和第八晶体管的负载路径是串联的,用于分流与来自第一电源电位的输入电流成比例的第一输出电流。 第十六和第十三晶体管的负载路径是串联的,用于从第二电源电位抽出等于第一输出电流的第二输出电流。 第九至第十六晶体管是一个,并且第十七,十八和第一至第八晶体管是另一个导电类型。
    • 30. 发明授权
    • Buffer amplifier architecture for semiconductor memory circuits
    • 用于半导体存储器电路的缓冲放大器架构
    • US06894933B2
    • 2005-05-17
    • US10759103
    • 2004-01-20
    • Maksim KuzmenkaOliver Kiehl
    • Maksim KuzmenkaOliver Kiehl
    • G11C7/10G11C11/4093G11C7/00
    • G11C7/1084G11C7/1078G11C7/109G11C7/1093G11C11/4093
    • A buffer amplifier architecture for buffering signals which are supplied in parallel to identical chips, particularly DRAM chips, on a semiconductor memory module, is disclosed. The architecture has adjustable delay circuits in each signal line and a delay detector circuit which receives a clock signal from the buffer amplifier architecture at the input and at the output of the buffer amplifier architecture, and takes the phase difference between the two signals to produce a control signal for setting the variable delay time of the delay circuits. To ensure that the delay time set by the delay detector circuit is independent of variations in parameters of the DRAM memory chips, the feedback path routed to the input of the delay detector circuit has a reference line network of the same structure and having the same electrical properties as capacitance elements which terminate the line network routed to the DRAM memory chips and the reference line network, and which have the same capacitances as the signal inputs on the DRAM memory chips.
    • 公开了一种用于缓冲在半导体存储器模块上并行提供给相同芯片,特别是DRAM芯片的信号的缓冲放大器架构。 该结构具有每个信号线中的可调延迟电路和延迟检测器电路,其在缓冲放大器架构的输入和输出处接收来自缓冲放大器架构的时钟信号,并且采用两个信号之间的相位差产生 用于设置延迟电路的可变延迟时间的控制信号。 为了确保由延迟检测器电路设置的延迟时间与DRAM存储器芯片的参数变化无关,路由到延迟检测器电路的输入端的反馈路径具有相同结构的参考线网络并且具有相同的电 属性作为终止线路网络路由到DRAM存储器芯片和参考线网络的电容元件,并且具有与DRAM存储器芯片上的信号输入相同的电容。