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    • 22. 发明授权
    • Method and device for measuring temperature during deposition of semiconductor
    • 用于在半导体沉积期间测量温度的方法和装置
    • US08673656B2
    • 2014-03-18
    • US13146307
    • 2008-12-26
    • Lacroix Yves
    • Lacroix Yves
    • G01R31/26H01L21/66
    • G01K11/125C23C14/541C23C16/52C30B23/002C30B25/16H01L21/02521H01L21/67248H01L22/10
    • Provided is a method and a device for measuring a temperature which can recognize the temperature of a semiconductor layer directly with high precision when the semiconductor layer is formed by deposition. The quantity of laser light transmitted to a semiconductor layer is monitored by a photodetector by using laser light having a wavelength λs at which the transmittance of light changes abruptly when the temperature of the semiconductor layer reaches Ts during or after deposition. When heat being given to the semiconductor layer is changed, the quantity of laser light monitored by the photodetector changes abruptly when the temperature of the semiconductor layer reaches Ts at a time A, B or C. Consequently, the fact that the temperature of the semiconductor layer reached Ts at a time A, B or C can be recognized exactly, and an error in temperature information observed by a device for measuring temperature variations can be calibrated, for example.
    • 提供了一种用于测量当半导体层通过沉积形成时可以以高精度直接识别半导体层的温度的温度的方法和装置。 通过使用具有波长范围的激光来监测透射到半导体层的激光的数量,当沉积期间或之后半导体层的温度达到Ts时,光的透射率突然变化。 当向半导体层施加热量时,当半导体层的温度在时间A,B或C达到Ts时,由光电检测器监测的激光的量急剧变化。因此,半导体的温度 可以精确地识别A,B或C上的层达到Ts,并且例如可以校准用于测量温度变化的装置观察到的温度信息的误差。
    • 23. 发明申请
    • METHOD AND DEVICE FOR MEASURING TEMPERATURE DURING DEPOSITION OF SEMICONDUCTOR
    • 用于在半导体沉积期间测量温度的方法和装置
    • US20110312107A1
    • 2011-12-22
    • US13146307
    • 2008-12-26
    • Lacroix Yves
    • Lacroix Yves
    • H01L21/66G01K13/00
    • G01K11/125C23C14/541C23C16/52C30B23/002C30B25/16H01L21/02521H01L21/67248H01L22/10
    • Provided is a method and a device for measuring a temperature which can recognize the temperature of a semiconductor layer directly with high precision when the semiconductor layer is formed by deposition. The quantity of laser light transmitted a semiconductor layer is monitored by a photodetector by using laser light having a wavelength As at which the transmittance of light changes abruptly when the temperature of the semiconductor layer reaches Ts during or after deposition. When heat being given to the semiconductor layer is changed, the quantity of laser light monitored by the photodetector changes abruptly when the temperature of the semiconductor layer reaches Ts at a time A, B or C. Consequently, the fact that the temperature of the semiconductor layer reached Ts at a time A, B or C can be recognized exactly, and an error in temperature information observed by a device for measuring temperature variations can be calibrated, for example.
    • 提供了一种用于测量当半导体层通过沉积形成时可以以高精度直接识别半导体层的温度的温度的方法和装置。 利用光电检测器,通过使用当沉积期间或之后半导体层的温度达到Ts时,光的透射率突然变化的波长为A的激光来监测透射半导体层的激光的量。 当向半导体层施加热量时,当半导体层的温度在时间A,B或C达到Ts时,由光电检测器监测的激光的量急剧变化。因此,半导体的温度 可以精确地识别A,B或C上的层达到Ts,并且例如可以校准用于测量温度变化的装置观察到的温度信息的误差。
    • 25. 发明申请
    • Alternating Current Light Emitting Device
    • US20080210954A1
    • 2008-09-04
    • US11995506
    • 2006-08-08
    • Jae Ho LeeLacroix Yves
    • Jae Ho LeeLacroix Yves
    • H01L33/00
    • H01L27/153H01L33/62H01L2224/48091H01L2224/48137H01L2924/00014
    • The present invention relates to a light emitting device in which light emitting cells of a first light emitting cell block are connected in parallel to light emitting cells of a second light emitting cell block corresponding thereto. A light emitting device of the present invention comprises a substrate, and first and second light emitting cell blocks formed on the substrate and having a plurality of light emitting cells electrically connected in series to one another, respectively. Each of the light emitting cells has an N-electrode and a P-electrode. A P-electrode at one end of the first light emitting cell block is connected to an N-electrode at one end of the second light emitting cell block, and an N-electrode at the other end of the first light emitting cell block is connected to a P-electrode at the other end of the second light emitting cell block. The P-electrode of each of the light emitting cells of the first light emitting cell block and the P-electrode of each of the light emitting cells of the second light emitting cell block corresponding thereto, or the N-electrode of each of the light emitting cells of the first light emitting cell block and the N-electrode of each of the light emitting cells of the second light emitting cell block corresponding thereto are electrically connected to each other. In the light emitting device of the present invention, the light emitting cells of the first light emitting cell block and the light emitting cells of the second light emitting cell block corresponding thereto are respectively connected in parallel so that a current can cross the light emitting cells of the first and second light emitting cell blocks. Thus, even though a leakage current occurs in some of light emitting cells, the current is allowed to cross light emitting cells connected in another direction, thereby preventing overload on some of the light emitting cells due to the leakage current and ensuring uniform light emission and prolonged life span in the AC light emitting device.
    • 26. 发明申请
    • APPARATUS AND METHOD FOR MEASURING A LUMINESCENT DECAY
    • 用于测量发光衰减的装置和方法
    • US20130140431A1
    • 2013-06-06
    • US13817062
    • 2011-02-15
    • Lacroix Yves
    • Lacroix Yves
    • G01N21/64G01N21/66
    • G01N21/6408G01N21/6489G01N21/66G01N2021/1719G01R31/2656H01L22/12H01L2924/0002H01L2924/00
    • [Problem] An apparatus and method for measuring luminescence decay due to the lifetime of energy carriers inside a material such as a semiconductor is presented.[Solution] The intensity of a laser is modulated by a light modulating device resulting in a square wave excitation 14, and applied to a semiconducting material. The energy carriers inside the semiconductor are excited, and recombine after a certain time to give rise in part to some light emission 24, which decays in intensity from the time at which the excitation periods end. The decaying light is separated from the light emitted during excitation by another light modulator resulting in 26. This light intensity 26 contains the information related to the carrier lifetime. Because the amount of this light 26 is small and has a very short emission time, a CCD detector is used to be integrated several cycles of the decay periods in order to obtain a reasonable signal. This integrated intensity signal can be used to determine the carrier lifetime.
    • [问题]提出了一种用于测量由诸如半导体的材料内的能量载体的寿命引起的发光衰减的装置和方法。 [解决方案]激光的强度由光调制装置调制,导致方波激励14,并施加到半导体材料。 半导体内的能量载体被激发,并且在一定时间之后复合以部分地产生一些发光24,其从激发周期结束的时间开始强度衰减。 衰减的光与由激发期间由另一个光调制器产生的光发射的光分离,导致26。该光强度26包含与载流子寿命有关的信息。 由于该光26的量很小并且发射时间非常短,所以使用CCD检测器来集成几个衰减周期的周期,以获得合理的信号。 该积分强度信号可用于确定载体寿命。