专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

21. 发明授权

US08703562B2 Manufacturing method of random access memory 有权
标题翻译：随机存取存储器的制造方法
公开(公告)号：US08703562B2
公开(公告)日：2014-04-22
申请号：US13426832
申请日：2012-03-22
申请人： Tzung-Han Lee , Chung-Lin Huang , Ron-Fu Chu
发明人： Tzung-Han Lee , Chung-Lin Huang , Ron-Fu Chu
IPC分类号： H01L21/8238
CPC分类号： H01L27/10894 , H01L27/10823 , H01L27/10876 , H01L27/10885
摘要： A manufacturing method of a random access memory includes the following steps: providing a semiconductor structure having an array region and a peripheral region; forming a plurality of first trenches in the array region, and concurrently, a plurality of second trenches on the peripheral region; forming a polysilicon layer to cover the array region and the peripheral region, and the first and the second trenches are filled up with the polysilicon layer; planarizing the polysilicon layer so the remaining polysilicon layer only resides in the first and the second trenches; forming a conductive layer on the semiconductor structure; patterning the conductive layer to form a plurality of landing pads on the array region, and a plurality of bit line units on the peripheral region; and forming a plurality of capacitor units which is in electrical connection to the landing pads.
摘要翻译：随机存取存储器的制造方法包括以下步骤：提供具有阵列区域和周边区域的半导体结构; 在阵列区域中形成多个第一沟槽，同时在周边区域上形成多个第二沟槽; 形成多晶硅层以覆盖阵列区域和外围区域，并且第一和第二沟槽被多晶硅层填充; 平坦化多晶硅层，使得剩余的多晶硅层仅驻留在第一和第二沟槽中; 在半导体结构上形成导电层; 图案化导电层以在阵列区域上形成多个着陆焊盘，以及在周边区域上形成多个位线单元; 以及形成与所述着陆焊盘电连接的多个电容器单元。

22. 发明申请

US20130119448A1 MEMORY LAYOUT STRUCTURE AND MEMORY STRUCTURE 有权
标题翻译：存储器布局结构和存储器结构
公开(公告)号：US20130119448A1
公开(公告)日：2013-05-16
申请号：US13343668
申请日：2012-01-04
申请人： Tzung-Han Lee , Chung-Lin Huang , Ron Fu Chu
发明人： Tzung-Han Lee , Chung-Lin Huang , Ron Fu Chu
IPC分类号： H01L27/108
CPC分类号： H01L27/10823 , H01L27/10855 , H01L27/10876 , H01L27/10891 , H01L28/90
摘要： A memory array layout includes an active region array having a plurality of active regions, wherein the active regions are arranged alternatively along a second direction and parts of the side of the adjacent active regions are overlapped along a second direction; a plurality of first doped region, wherein each first doped region is disposed in a middle region; a plurality of second doped region, wherein each second doped region is disposed in a distal end region respectively; a plurality of recessed gate structures; a plurality of word lines electrically connected to each recessed gate structure respectively; a plurality of digit lines electrically connected to the first doped region respectively; and a plurality of capacitors electrically connected to each second doped region respectively.
摘要翻译：存储器阵列布局包括具有多个有源区域的有源区域阵列，其中有源区域沿着第二方向交替布置，并且相邻有源区域的一部分侧沿第二方向重叠; 多个第一掺杂区域，其中每个第一掺杂区域设置在中间区域中; 多个第二掺杂区域，其中每个第二掺杂区域分别设置在远端区域中; 多个凹入栅结构; 分别电连接到每个凹入栅结构的多个字线; 分别电连接到第一掺杂区的多个数字线; 以及分别与每个第二掺杂区域电连接的多个电容器。

23. 发明申请

US20130052786A1 FABRICATING METHOD OF DRAM STRUCTURE 有权
标题翻译： DRAM结构的制作方法
公开(公告)号：US20130052786A1
公开(公告)日：2013-02-28
申请号：US13297276
申请日：2011-11-16
申请人： Tzung-Han Lee , Chung-Lin Huang , Ron Fu Chu
发明人： Tzung-Han Lee , Chung-Lin Huang , Ron Fu Chu
IPC分类号： H01L21/02
CPC分类号： H01L27/10894 , H01L27/10855 , H01L27/10876 , H01L27/10888 , H01L29/66545
摘要： A fabricating method of a DRAM structure includes providing a substrate comprising a memory array region and a peripheral region. A buried gate transistor is disposed within the memory array region, and a planar gate transistor is disposed within the peripheral region. Furthermore, an interlayer dielectric layer covers the memory array region, the buried gate transistor and the planar gate transistor. Then, a capping layer of the planar gate transistor and part of the interlayer dielectric layer are removed simultaneously so that a first contact hole, a second contact hole and a third contact hole are formed in the interlayer dielectric layer. A drain doping region of the buried gate transistor is exposed through the first contact hole, a doping region of the planar gate transistor is exposed through the second contact hole, and a gate electrode of the planar gate transistor is exposed through the third contact hole.
摘要翻译： DRAM结构的制造方法包括提供包括存储器阵列区域和外围区域的衬底。掩埋栅极晶体管设置在存储器阵列区域内，并且平面栅极晶体管设置在周边区域内。此外，层间电介质层覆盖存储器阵列区域，掩埋栅极晶体管和平面栅极晶体管。然后，同时去除平面栅晶体管的覆盖层和层间电介质层的一部分，使得在层间电介质层中形成第一接触孔，第二接触孔和第三接触孔。埋入栅极晶体管的漏极掺杂区域通过第一接触孔露出，平面栅极晶体管的掺杂区域通过第二接触孔露出，平面栅极晶体管的栅电极通过第三接触孔露出。

24. 发明授权

US08288224B2 Method for manufacturing capacitor lower electrodes of semiconductor memory 有权
标题翻译：制造半导体存储器的电容器下电极的方法
公开(公告)号：US08288224B2
公开(公告)日：2012-10-16
申请号：US12699399
申请日：2010-02-03
申请人： Shin-Bin Huang , Tzung-Han Lee , Chung-Lin Huang
发明人： Shin-Bin Huang , Tzung-Han Lee , Chung-Lin Huang
IPC分类号： H01L21/8242
CPC分类号： H01L28/92
摘要： A method for manufacturing capacitor lower electrodes includes a dielectric layer, a first silicon nitride layer and a hard mask layer; partially etching the hard mask layer, the first silicon nitride layer and the dielectric layer to form a plurality of concave portions; depositing a second silicon nitride layer onto the hard mask layer and into the concave portions; partially etching the second silicon nitride layer, the hard mask layer and the dielectric layer to form a plurality of trenches; forming a capacitor lower electrode within each trench and partially etching the first silicon nitride layer, the second silicon nitride layer, the dielectric layer and the capacitor lower electrodes to form an etching area; and etching and removing the dielectric layer from the etching area, thereby a periphery of each capacitor lower electrode is surrounded and attached to by the second silicon nitride layer.
摘要翻译：制造电容器下电极的方法包括电介质层，第一氮化硅层和硬掩模层; 部分地蚀刻硬掩模层，第一氮化硅层和电介质层以形成多个凹部; 在所述硬掩模层上沉积第二氮化硅层并进入所述凹部; 部分蚀刻第二氮化硅层，硬掩模层和电介质层以形成多个沟槽; 在每个沟槽内形成电容器下电极，并部分地蚀刻第一氮化硅层，第二氮化硅层，电介质层和电容器下电极以形成蚀刻区域; 并且从蚀刻区域蚀刻除去电介质层，由此每个电容器下电极的周围被第二氮化硅层包围并附着。

25. 发明申请

US20090008691A1 DRAM STRUCTURE AND METHOD OF MAKING THE SAME 有权
标题翻译： DRAM结构及其制作方法
公开(公告)号：US20090008691A1
公开(公告)日：2009-01-08
申请号：US11965769
申请日：2007-12-28
申请人： Tzung-Han Lee , Chih-Hao Cheng , Te-Yin Chen , Chung-Yuan Lee , En-Jui Li
发明人： Tzung-Han Lee , Chih-Hao Cheng , Te-Yin Chen , Chung-Yuan Lee , En-Jui Li
IPC分类号： H01L27/108
CPC分类号： H01L29/66621 , H01L27/10823 , H01L27/10829 , H01L27/10876 , H01L29/4236
摘要： A DRAM structure has a substrate, a buried transistor with a fin structure, a trench capacitor, and a surface strap on the surface of the substrate. The surface strap is used to electrically connect a drain region to the trench capacitor.
摘要翻译： DRAM结构具有衬底，具有翅片结构的埋入晶体管，沟槽电容器和衬底表面上的表面带。表面带用于将漏极区域电连接到沟槽电容器。

26. 发明申请

US20080318377A1 METHOD OF FORMING SELF-ALIGNED GATES AND TRANSISTORS 审中-公开
标题翻译：形成自对准栅和晶体管的方法
公开(公告)号：US20080318377A1
公开(公告)日：2008-12-25
申请号：US11964720
申请日：2007-12-27
申请人： Tzung-Han Lee , Chih-Hao Cheng , Pei-Tzu Lee , Te-Yin Chen , Chung-Yuan Lee
发明人： Tzung-Han Lee , Chih-Hao Cheng , Pei-Tzu Lee , Te-Yin Chen , Chung-Yuan Lee
IPC分类号： H01L21/8242
CPC分类号： H01L27/10876 , H01L27/0207 , H01L27/10879 , H01L29/66787 , H01L29/7851
摘要： Method for fabricating a self-aligned gate of a transistor including: forming a plurality of deep trench capacitors in a substrate, concurrently forming a surface strap and a contact pad on a surface of the substrate, wherein a spacing between the surface strap and the contact pad exposes a portion of an active area, filling the spacing with a dielectric layer, forming a photoresist pattern on the substrate, wherein the photoresist has an opening situated directly above the spacing between the surface strap and the contact pad, etching away the dielectric layer and a portion of a shallow trench isolation region through the opening thereby forming an upwardly protruding fin-typed channel structure, forming a gate dielectric layer on the upwardly protruding fin-typed channel structure, and forming a gate on the gate dielectric layer.
摘要翻译：一种用于制造晶体管的自对准栅极的方法，包括：在衬底中形成多个深沟槽电容器，同时在衬底的表面上形成表面带和接触焊盘，其中表面带和触点之间的间隔衬垫暴露有源区的一部分，用介电层填充间隔，在衬底上形成光致抗蚀剂图案，其中光致抗蚀剂具有位于表面带和接触垫之间的间隔正上方的开口，蚀刻掉介电层以及通过开口的浅沟槽隔离区域的一部分，从而形成向上突出的鳍状沟道结构，在向上突出的鳍状沟道结构上形成栅极电介质层，并在栅极电介质层上形成栅极。

27. 发明授权

US07358556B2 SRAM cell structure and manufacturing method thereof 有权
标题翻译： SRAM单元结构及其制造方法
公开(公告)号：US07358556B2
公开(公告)日：2008-04-15
申请号：US11416926
申请日：2006-05-02
申请人： Tzung-Han Lee , Kuang-Pi Lee , Wen-Jeng Lin , Rern-Hurng Larn
发明人： Tzung-Han Lee , Kuang-Pi Lee , Wen-Jeng Lin , Rern-Hurng Larn
IPC分类号： H01L27/108
CPC分类号： H01L27/1087 , H01L27/11 , Y10S257/903
摘要： A static random access memory (SRAM) cell structure at least comprising a substrate, a transistor, an upper electrode and a capacitor dielectric layer. A device isolation structure is set up in the substrate to define an active region. The active region has an opening. The transistor is set up over the active region of the substrate. The source region of the transistor is next to the opening. The upper electrode is set up over the opening such that the opening is completely filled. The capacitor dielectric layer is set up between the upper electrode and the substrate.
摘要翻译：至少包括衬底，晶体管，上电极和电容器电介质层的静态随机存取存储器（SRAM）单元结构。在衬底中设置器件隔离结构以限定有源区。活动区域有一个开口。晶体管设置在衬底的有源区上。晶体管的源极区域靠近开口。将上电极设置在开口上方，使得开口完全充满。电容器介电层设置在上电极和衬底之间。

28. 发明授权

US07357708B2 Anchor structure for fans 失效
标题翻译：球迷的锚结构
公开(公告)号：US07357708B2
公开(公告)日：2008-04-15
申请号：US10665500
申请日：2003-09-22
申请人： Tzung-Han Lee
发明人： Tzung-Han Lee
IPC分类号： H05K5/00
CPC分类号： H05K7/20172 , F04D29/601
摘要： An anchor structure for fans mainly to fasten a fan to an installation object without damaging the fan structure includes coupling members for fastening through holes formed on the corners of the fan. Each of the coupling members includes a first fastening element running through the through hole from the rear end thereof and a second fastening element running though the front end of the through hole to engage with the first fastening element so that the coupling members are fastened securely to maintain the fan structure in an integrated manner to perform normal operation.
摘要翻译：用于主要将风扇固定到安装对象而不损坏风扇结构的风扇的锚结构包括用于通过形成在风扇角部上的孔紧固的联接构件。每个联接构件包括从其后端延伸通过通孔的第一紧固元件和贯穿通孔的前端延伸的第二紧固元件，以与第一紧固元件接合，使得联接构件牢固地紧固到以一体化的方式维护风扇结构，以正常运行。

29. 发明授权

US07254020B2 Fan assembly for a power supply 有权
标题翻译：风扇组件供电
公开(公告)号：US07254020B2
公开(公告)日：2007-08-07
申请号：US11013444
申请日：2004-12-17
申请人： Tzung-Han Lee
发明人： Tzung-Han Lee
IPC分类号： H05K7/20
CPC分类号： H05K7/20172
摘要： The present invention discloses a fan assembly for a power supply and improves the traditional installation of a fan onto a power supply that leaves insufficient spaces for designing the connecting holes as required by the existing installation specification, and mounts the fan into a power supply at a specific position by a specific fixing member and uses the fixing member to keep the fan at a specific interval from the end surface of the power supply without being in direct contact with the power supply. Therefore, the interval from the end surface provides sufficient space for the design of the ventilation holes for the airflow and the connecting holes as required by the installation specification of the power supply.
摘要翻译：本发明公开了一种用于电源的风扇组件，并且改进了风扇传统安装到电源上，该电源为现有安装规范要求的设计连接孔留出了不足的空间，并将风扇安装在电源并且使用固定构件将风扇保持在与电源的端面相对的特定间隔，而不与电源直接接触。因此，根据电源的安装规范，从端面的间隔为气流和连接孔的通风孔的设计提供足够的空间。

30. 发明申请

US20060133034A1 Fan assembly for a power supply 有权
标题翻译：风扇组件供电
公开(公告)号：US20060133034A1
公开(公告)日：2006-06-22
申请号：US11013444
申请日：2004-12-17
申请人： Tzung-Han Lee
发明人： Tzung-Han Lee
IPC分类号： H05K7/20
CPC分类号： H05K7/20172
摘要： The present invention discloses a fan assembly for a power supply and improves the traditional installation of a fan onto a power supply that leaves insufficient spaces for designing the connecting holes as required by the existing installation specification, and mounts the fan into a power supply at a specific position by a specific fixing member and uses the fixing member to keep the fan at a specific interval from the end surface of the power supply without being in direct contact with the power supply. Therefore, the interval from the end surface provides sufficient space for the design of the ventilation holes for the airflow and the connecting holes as required by the installation specification of the power supply.
摘要翻译：本发明公开了一种用于电源的风扇组件，并且改进了风扇传统安装到电源上，该电源为现有安装规范要求的设计连接孔留出了不足的空间，并将风扇安装在电源并且使用固定构件将风扇保持在与电源的端面相对的特定间隔，而不与电源直接接触。因此，根据电源的安装规范，从端面的间隔为气流和连接孔的通风孔的设计提供足够的空间。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式