专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

21. 发明授权

US08609526B2 Preventing UBM oxidation in bump formation processes 有权
标题翻译：在凸块形成过程中防止UBM氧化
公开(公告)号：US08609526B2
公开(公告)日：2013-12-17
申请号：US12842617
申请日：2010-07-23
申请人： Chung-Shi Liu , Cheng-Chung Lin , Ming-Che Ho , Kuo Cheng Lin , Meng-Wei Chou
发明人： Chung-Shi Liu , Cheng-Chung Lin , Ming-Che Ho , Kuo Cheng Lin , Meng-Wei Chou
IPC分类号： H01L21/445 , H01L21/4757
CPC分类号： H01L24/05 , H01L21/0206 , H01L21/02068 , H01L24/03 , H01L24/11 , H01L24/13 , H01L2224/0346 , H01L2224/0347 , H01L2224/0361 , H01L2224/0381 , H01L2224/0401 , H01L2224/05027 , H01L2224/05124 , H01L2224/05139 , H01L2224/05144 , H01L2224/05147 , H01L2224/05568 , H01L2224/05573 , H01L2224/05655 , H01L2224/1146 , H01L2224/1147 , H01L2224/11849 , H01L2224/13083 , H01L2224/13111 , H01L2224/13113 , H01L2224/13116 , H01L2224/13139 , H01L2224/13147 , H01L2224/13155 , H01L2224/81022 , H01L2224/94 , H01L2924/00013 , H01L2924/0002 , H01L2924/01006 , H01L2924/01013 , H01L2924/01018 , H01L2924/01022 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01073 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/04941 , H01L2924/04953 , H01L2924/14 , H01L2924/00014 , H01L2224/11 , H01L2224/13099 , H01L2224/13599 , H01L2224/05599 , H01L2224/05099 , H01L2224/29099 , H01L2224/29599 , H01L2224/05552
摘要： A method of forming an integrated circuit structure includes forming a copper-containing seed layer on a wafer, and performing a descum step on an exposed surface of the copper-containing seed layer. The descum step is performed using a process gas including fluorine and oxygen. A reduction/purge step is then performed on the exposed surface of the copper-containing seed layer using a nitrogen-containing gas. A copper-containing layer is plated on the copper-containing seed layer.
摘要翻译：形成集成电路结构的方法包括在晶片上形成含铜晶种层，并在含铜种子层的暴露表面上进行除氧步骤。除氧步骤使用包括氟和氧的工艺气体进行。然后使用含氮气体在含铜种子层的暴露表面上进行还原/吹扫步骤。含铜层镀在含铜种子层上。

22. 发明授权

US08569897B2 Protection layer for preventing UBM layer from chemical attack and oxidation 有权
标题翻译：防止UBM层受化学侵蚀和氧化的保护层
公开(公告)号：US08569897B2
公开(公告)日：2013-10-29
申请号：US12786818
申请日：2010-05-25
申请人： Chung-Shi Liu , Chien Ling Hwang , Ming-Che Ho
发明人： Chung-Shi Liu , Chien Ling Hwang , Ming-Che Ho
IPC分类号： H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L24/11 , H01L24/03 , H01L24/05 , H01L24/13 , H01L2224/0361 , H01L2224/03912 , H01L2224/0401 , H01L2224/05027 , H01L2224/05147 , H01L2224/05166 , H01L2224/05572 , H01L2224/05647 , H01L2224/1145 , H01L2224/11452 , H01L2224/11462 , H01L2224/11464 , H01L2224/1147 , H01L2224/11849 , H01L2224/1308 , H01L2224/13083 , H01L2224/13084 , H01L2224/13109 , H01L2224/13111 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13164 , H01L2224/1357 , H01L2224/13611 , H01L2224/16507 , H01L2924/00013 , H01L2924/0002 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01019 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01025 , H01L2924/01027 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01038 , H01L2924/0104 , H01L2924/01043 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/01051 , H01L2924/01073 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/014 , H01L2924/04941 , H01L2924/04953 , H01L2924/14 , H01L2924/19041 , H01L2924/00014 , H01L2224/13099 , H01L2924/01083 , H01L2224/13599 , H01L2224/05599 , H01L2224/05099 , H01L2224/29099 , H01L2224/29599 , H01L2224/05552
摘要： A protection layer formed of a CuGeyNz layer, a CuSixNz layer, a CuSixGeyNz layer or combinations thereof is formed on an under-bump metallurgy (UBM) layer for preventing the UBM layer from chemical attack and oxidation during subsequent processes.
摘要翻译：在凸块式冶金（UBM）层上形成由CuGeyNz层，CuSixNz层，CuSixGeyNz层或其组合形成的保护层，用于防止UBM层在后续工艺中发生化学侵蚀和氧化。

23. 发明申请

US20110092064A1 Preventing UBM Oxidation in Bump Formation Processes 有权
标题翻译：防止在Bump形成过程中的UBM氧化
公开(公告)号：US20110092064A1
公开(公告)日：2011-04-21
申请号：US12842617
申请日：2010-07-23
申请人： Chung-Shi Liu , Cheng-Chung Lin , Ming-Che Ho , Kuo Cheng Lin , Meng-Wei Chou
发明人： Chung-Shi Liu , Cheng-Chung Lin , Ming-Che Ho , Kuo Cheng Lin , Meng-Wei Chou
IPC分类号： H01L21/3205
CPC分类号： H01L24/05 , H01L21/0206 , H01L21/02068 , H01L24/03 , H01L24/11 , H01L24/13 , H01L2224/0346 , H01L2224/0347 , H01L2224/0361 , H01L2224/0381 , H01L2224/0401 , H01L2224/05027 , H01L2224/05124 , H01L2224/05139 , H01L2224/05144 , H01L2224/05147 , H01L2224/05568 , H01L2224/05573 , H01L2224/05655 , H01L2224/1146 , H01L2224/1147 , H01L2224/11849 , H01L2224/13083 , H01L2224/13111 , H01L2224/13113 , H01L2224/13116 , H01L2224/13139 , H01L2224/13147 , H01L2224/13155 , H01L2224/81022 , H01L2224/94 , H01L2924/00013 , H01L2924/0002 , H01L2924/01006 , H01L2924/01013 , H01L2924/01018 , H01L2924/01022 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01073 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/04941 , H01L2924/04953 , H01L2924/14 , H01L2924/00014 , H01L2224/11 , H01L2224/13099 , H01L2224/13599 , H01L2224/05599 , H01L2224/05099 , H01L2224/29099 , H01L2224/29599 , H01L2224/05552
摘要： A method of forming an integrated circuit structure includes forming a copper-containing seed layer on a wafer, and performing a descum step on an exposed surface of the copper-containing seed layer. The descum step is performed using a process gas including fluorine and oxygen. A reduction/purge step is then performed on the exposed surface of the copper-containing seed layer using a nitrogen-containing gas. A copper-containing layer is plated on the copper-containing seed layer.
摘要翻译：形成集成电路结构的方法包括在晶片上形成含铜晶种层，并在含铜种子层的暴露表面上进行除氧步骤。除氧步骤使用包括氟和氧的工艺气体进行。然后使用含氮气体在含铜种子层的暴露表面上进行还原/吹扫步骤。含铜层镀在含铜种子层上。

24. 发明授权

US08641920B2 Polishing composition for planarizing metal layer 有权
标题翻译：用于平坦化金属层的抛光组合物
公开(公告)号：US08641920B2
公开(公告)日：2014-02-04
申请号：US12482983
申请日：2009-06-11
申请人： Song-Yuan Chang , Ming-Che Ho , Ming-hui Lu
发明人： Song-Yuan Chang , Ming-Che Ho , Ming-hui Lu
IPC分类号： C09K13/00
CPC分类号： C09K3/1463
摘要： A polishing composition of the present invention at least comprises about 750 ppm to less than 5000 ppm by weight of abrasive particles, hydrogen peroxide, an accelerator, a dual-corrosion inhibitor and water, wherein the dual-corrosion inhibitor contains a first and a second corrosion inhibitor. The dual-corrosion inhibitor is applied to the planarization of metal layers so as to maintain a high removal rate of metal layers as well as suppress etching of the metal, thus capable of reducing polishing defects such as dishing, erosion and the like.
摘要翻译：本发明的抛光组合物至少包含约750ppm至小于5000ppm的磨料颗粒，过氧化氢，促进剂，双重腐蚀抑制剂和水，其中双重腐蚀抑制剂包含第一和第二腐蚀抑制剂。将双重腐蚀抑制剂应用于金属层的平面化，以保持金属层的高去除率以及抑制金属的蚀刻，从而能够减少抛光缺陷如凹陷，侵蚀等。

25. 发明授权

US08172641B2 CMP by controlling polish temperature 有权
标题翻译： CMP通过控制抛光温度
公开(公告)号：US08172641B2
公开(公告)日：2012-05-08
申请号：US12174762
申请日：2008-07-17
申请人： Ming-Che Ho , Jean Wang , Lawrence Chiang Sheu
发明人： Ming-Che Ho , Jean Wang , Lawrence Chiang Sheu
IPC分类号： B24B1/00
CPC分类号： B24B37/015 , B24B55/02
摘要： A method for manufacturing integrated circuits on a wafer includes providing a facility-supplied room temperature solution; controlling the temperature of the facility-supplied room temperature solution to a desired temperature set point to generate a rinse solution; and rinsing a polishing pad using the rinse solution. The wafer is then polished by means of a chemical mechanical polishing process.
摘要翻译：一种用于在晶片上制造集成电路的方法包括提供设备提供的室温解决方案; 将设备供应的室温溶液的温度控制到所需温度设定点以产生漂洗溶液; 并使用冲洗溶液冲洗抛光垫。然后通过化学机械抛光工艺抛光晶片。

26. 发明申请

US20100163784A1 Polishing Composition for Planarizing Metal Layer 有权
标题翻译：用于平面化金属层的抛光组合物
公开(公告)号：US20100163784A1
公开(公告)日：2010-07-01
申请号：US12482983
申请日：2009-06-11
申请人： Song-Yuan CHANG , Ming-Che Ho , Ming-hui Lu
发明人： Song-Yuan CHANG , Ming-Che Ho , Ming-hui Lu
IPC分类号： C09K13/00
CPC分类号： C09K3/1463
摘要： A polishing composition of the present invention at least comprises about 750 ppm to less than 5000 ppm by weight of abrasive particles, hydrogen peroxide, an accelerator, a dual-corrosion inhibitor and water, wherein the dual-corrosion inhibitor contains a first and a second corrosion inhibitor. The dual-corrosion inhibitor is applied to the planarization of metal layers so as to maintain a high removal rate of metal layers as well as suppress etching of the metal, thus capable of reducing polishing defects such as dishing, erosion and the like.
摘要翻译：本发明的抛光组合物至少包含约750ppm至小于5000ppm的磨料颗粒，过氧化氢，促进剂，双重腐蚀抑制剂和水，其中双重腐蚀抑制剂包含第一和第二腐蚀抑制剂。将双重腐蚀抑制剂应用于金属层的平面化，以保持金属层的高去除率以及抑制金属的蚀刻，从而能够减少抛光缺陷如凹陷，侵蚀等。

27. 发明授权

US06233167B1 Power-transforming device 有权
标题翻译：电力转换装置
公开(公告)号：US06233167B1
公开(公告)日：2001-05-15
申请号：US09389153
申请日：1999-09-02
申请人： Chun-Chen Chen , Ming-Che Ho
发明人： Chun-Chen Chen , Ming-Che Ho
IPC分类号： H02M100
CPC分类号： H01R13/6675 , H01R13/72 , H01R31/06 , H01R2201/06
摘要： A power-transforming device including a power-transforming body for transforming an input power into a transformed power and an output port extractably mounted in the power-transforming body for outputting the transformed power is provided. Because the electric wires and plugs of the power-transforming device can be extracted from the power-transforming body and be collected separately, the power-transforming device is very convenient to be carried and used.
摘要翻译：提供一种功率变换装置，其包括用于将输入功率变换为变换后的功率的电力变换体和可提取地安装在电力变换体中用于输出变换后的电力的输出端口。因为功率转换装置的电线和插头可以从电力转换体中提取并分开收集，所以电力转换装置非常方便携带和使用。

28. 发明授权

US6062300A Evenly heat-dissipating apparatus 失效
标题翻译：均匀的散热装置
公开(公告)号：US6062300A
公开(公告)日：2000-05-16
申请号：US37326
申请日：1998-03-09
申请人： Chia-Hua Wang , Ming-Che Ho , Wen-Shan Chuans
发明人： Chia-Hua Wang , Ming-Che Ho , Wen-Shan Chuans
IPC分类号： H05K7/20 , F28F13/00
CPC分类号： H05K7/20454
摘要： An apparatus is adapted to be disposed between a heating element and a housing for evenly dissipating heat generated by the heating element. The apparatus includes a first thermal conductor having a first part contacted with the heating element for absorbing the generated heat from the heating element, and having a second part, and a second thermal conductor having a first part with a relatively low thermal conductivity to contact with the first part of the first thermal conductor and a second part with a relatively high thermal conductivity to contact with the second part of the first thermal conductor for transferring the heat from the first thermal conductor to the housing.
摘要翻译：一种装置适于设置在加热元件和壳体之间，以均匀地散发由加热元件产生的热量。该装置包括第一热导体，其具有与加热元件接触的第一部分，用于吸收来自加热元件的产生的热量，并具有第二部分，第二热导体具有第一部分，该第一部分具有相对较低的热导率以与所述第一热导体的第一部分和具有相对较高导热率的第二部分与第一热导体的第二部分接触，用于将热量从第一热导体转移到壳体。

29. 发明申请

US20100193728A1 Chemical Mechanical Polishing Composition 审中-公开
标题翻译：化学机械抛光组合物
公开(公告)号：US20100193728A1
公开(公告)日：2010-08-05
申请号：US12186302
申请日：2008-08-05
申请人： Song-Yuan CHANG , Ming-hui Lu , Ming-Che Ho
发明人： Song-Yuan CHANG , Ming-hui Lu , Ming-Che Ho
IPC分类号： C09K13/00
CPC分类号： C09K3/1463 , C09G1/02 , H01L21/3212
摘要： An inhibitor composition according to the present invention at least comprises an imidazoline compound or a triazole compound or combinations thereof, and sarcosine and salt compounds thereof or combinations thereof. The inhibitor composition is applicable to chemical mechanical polishing so as to maintain a high removal rate of metal layers as well as suppress metal etching, thereby reducing polishing defects such as dishing, erosion and the like.
摘要翻译：根据本发明的抑制剂组合物至少包含咪唑啉化合物或三唑化合物或其组合，以及其肌氨酸及其盐化合物或其组合。抑制剂组合物适用于化学机械抛光，以保持金属层的高去除率以及抑制金属蚀刻，从而减少诸如凹陷，侵蚀等的抛光缺陷。

30. 发明申请

US20130187277A1 CRACK STOPPER ON UNDER-BUMP METALLIZATION LAYER 有权
标题翻译：在下层金属化层的破裂停止
公开(公告)号：US20130187277A1
公开(公告)日：2013-07-25
申请号：US13443556
申请日：2012-04-10
申请人： Yu-Feng Chen , Chun-Hung Lin , Han-Ping Pu , Chih-Hang Tung , Kai-Chiang Wu , Ming-Che Ho
发明人： Yu-Feng Chen , Chun-Hung Lin , Han-Ping Pu , Chih-Hang Tung , Kai-Chiang Wu , Ming-Che Ho
IPC分类号： H01L23/48
CPC分类号： H01L24/13 , H01L23/488 , H01L24/02 , H01L24/05 , H01L24/10 , H01L24/11 , H01L24/16 , H01L2224/0401 , H01L2224/05027 , H01L2224/05111 , H01L2224/05144 , H01L2224/05147 , H01L2224/05155 , H01L2224/05166 , H01L2224/05181 , H01L2224/05186 , H01L2224/05551 , H01L2224/05555 , H01L2224/05572 , H01L2224/05611 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05666 , H01L2224/05681 , H01L2224/05686 , H01L2224/10125 , H01L2224/1146 , H01L2224/1147 , H01L2224/11849 , H01L2224/13012 , H01L2224/13076 , H01L2224/13111 , H01L2224/13113 , H01L2224/13116 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/16237 , H01L2224/16238 , H01L2224/81191 , H01L2924/00014 , H01L2924/01029 , H01L2924/12042 , H01L2924/00012 , H01L2924/014 , H01L2924/04941 , H01L2924/04953 , H01L2924/01047 , H01L2224/05552 , H01L2924/00
摘要： A semiconductor die includes a crack stopper on an under-bump metallization (UBM) layer. The crack stopper is in the shape of hollow cylinder with at least two openings.
摘要翻译：半导体管芯包括在凸块下金属化（UBM）层上的裂纹阻挡层。裂缝止动器为具有至少两个开口的中空圆筒形状。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式