专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

21. 发明申请

US20130029440A1 METHOD FOR FABRICATING SEMICONDUCTOR LIGHT-EMITTING DEVICE 审中-公开
标题翻译：制造半导体发光器件的方法
公开(公告)号：US20130029440A1
公开(公告)日：2013-01-31
申请号：US13632856
申请日：2012-10-01
申请人： Ya-ju LEE , Ta-Cheng Hsu , Ming-Ta Chin , Yen-Wen Chen , Lo Wu-Tsung , Chung-Yuan Li , Min-Hsun Hsieh
发明人： Ya-ju LEE , Ta-Cheng Hsu , Ming-Ta Chin , Yen-Wen Chen , Lo Wu-Tsung , Chung-Yuan Li , Min-Hsun Hsieh
IPC分类号： H01L33/22
CPC分类号： H01L33/16 , H01L33/22
摘要： A semiconductor light-emitting device is disclosed. The semiconductor light-emitting device comprises a multilayer epitaxial structure disposed on a substrate. The substrate has a predetermined lattice direction perpendicular to an upper surface thereof, wherein the predetermined lattice direction is angled toward [0 11] or [01 1] from [100], or toward [011] or [0 11] from [ 100] so that the upper surface of the substrate comprises at least two lattice planes with different lattice plane directions. The multilayer epitaxial structure has a roughened upper surface perpendicular to the predetermined lattice direction. The invention also discloses a method for fabricating a semiconductor light-emitting device.
摘要翻译：公开了一种半导体发光器件。半导体发光器件包括设置在衬底上的多层外延结构。衬底具有垂直于其上表面的预定晶格方向，其中预定的晶格方向从[100]或[100]到[011]或[011]的角度朝向[011]或[01 1] 使得衬底的上表面包括具有不同晶格面方向的至少两个晶格面。多层外延结构具有垂直于预定晶格方向的粗糙化的上表面。本发明还公开了一种制造半导体发光器件的方法。

22. 发明申请

US20110281383A1 METHOD FOR MANUFACTURING HIGH EFFICIENCY LIGHT-EMITTING DIODES 有权
标题翻译：制造高效发光二极管的方法
公开(公告)号：US20110281383A1
公开(公告)日：2011-11-17
申请号：US13191188
申请日：2011-07-26
申请人： Chien-Kai Chung , Ta-Cheng Hsu , Jung-Min Hwang , Min-Hsun Hsieh , Ya-Lan Yang , De-Shan Kuo , Tsun-Kai Ko , Chien-Fu Shen , Ting-Chia Ko , Schang-Jing Hon
发明人： Chien-Kai Chung , Ta-Cheng Hsu , Jung-Min Hwang , Min-Hsun Hsieh , Ya-Lan Yang , De-Shan Kuo , Tsun-Kai Ko , Chien-Fu Shen , Ting-Chia Ko , Schang-Jing Hon
IPC分类号： H01L33/48
CPC分类号： H01L33/005 , H01L21/02057 , H01L21/3043 , H01L33/0095
摘要： A method for manufacturing a light-emitting device comprising the steps of: providing a substrate comprising a first surface and a second surface; forming a plurality of cutting lines on the substrate by a laser beam; cleaning the substrate by a chemical solution; and forming a light-emitting stack on an first surface of the substrate after cleaning the substrate.
摘要翻译：一种制造发光器件的方法，包括以下步骤：提供包括第一表面和第二表面的基底; 通过激光束在基板上形成多条切割线; 用化学溶液清洗基材; 以及在清洁所述衬底之后在所述衬底的第一表面上形成发光叠层。

23. 发明申请

US20080067534A1 Light emitting device 有权
标题翻译：发光装置
公开(公告)号：US20080067534A1
公开(公告)日：2008-03-20
申请号：US11878193
申请日：2007-07-23
申请人： Min-Hsun Hsieh , Ta-Cheng Hsu , ML Tsai , Chih-Chiang Lu , Chien-Yuan Wang , Yen-Wen Chen , Ya-Ju Lee
发明人： Min-Hsun Hsieh , Ta-Cheng Hsu , ML Tsai , Chih-Chiang Lu , Chien-Yuan Wang , Yen-Wen Chen , Ya-Ju Lee
IPC分类号： H01L33/00
CPC分类号： H01L33/50 , H01L33/486 , H01L33/507 , H01L33/54 , H01L33/60 , H01L33/62 , H01L33/64 , H01L33/641 , H01L2224/48091 , H01L2224/49107 , H01L2924/01322 , H01L2924/00014
摘要： This disclosure relates to a light-emitting apparatus comprising a submount, a chip carrier formed on the submount, a light-emitting chip formed on the chip carrier, a reflecting cup formed on the submount and enclosing the light-emitting chip and the chip carrier, and a transparent encapsulating material for encapsulating the light-emitting chip.
摘要翻译：本公开涉及一种发光装置，其包括基座，形成在基座上的芯片载体，形成在芯片载体上的发光芯片，形成在基座上并包围发光芯片和芯片载体的反射杯以及用于封装发光芯片的透明封装材料。

24. 发明申请

US20060163595A1 Light emitting device 有权
公开(公告)号：US20060163595A1
公开(公告)日：2006-07-27
申请号：US11326750
申请日：2006-01-06
申请人： Min-Hsun Hsieh , Ta-Cheng Hsu , Wei-Chih Peng , Ya-Ju Lee
发明人： Min-Hsun Hsieh , Ta-Cheng Hsu , Wei-Chih Peng , Ya-Ju Lee
IPC分类号： H01L33/00
CPC分类号： H01L33/22
摘要： A light emitting device having a transparent substrate, a light emitting stack, and a transparent adhesive layer is provided. The light emitting stack is disposed above the transparent substrate and comprises a diffusing surface. The transparent adhesive layer is disposed between the transparent substrate and the diffusing surface of the light emitting stack; an index of refraction of the light emitting stack is different from that of the transparent adhesive layer.

25. 发明授权

US08679874B2 Light-emitting device having a roughened surface with different topographies 有权
标题翻译：具有不同形貌的粗糙表面的发光器件
公开(公告)号：US08679874B2
公开(公告)日：2014-03-25
申请号：US13596811
申请日：2012-08-28
申请人： Chiu-Lin Yao , Ta-Cheng Hsu
发明人： Chiu-Lin Yao , Ta-Cheng Hsu
IPC分类号： H01L33/22
CPC分类号： H01L33/22 , H01L33/387 , H01L2933/0016
摘要： This invention provides an optoelectronic semiconductor device having a rough surface and the manufacturing method thereof. The optoelectronic semiconductor device comprises a semiconductor stack having a rough surface and an electrode layer overlaying the semiconductor stack. The rough surface comprises a first region having a first topography and a second region having a second topography. The method comprises the steps of forming a semiconductor stack on a substrate, forming an electrode layer on the semiconductor stack, thermal treating the semiconductor stack, and wet etching the surface of the semiconductor stack to form a rough surface.
摘要翻译：本发明提供一种具有粗糙表面的光电半导体器件及其制造方法。光电子半导体器件包括具有粗糙表面的半导体叠层和覆盖半导体叠层的电极层。粗糙表面包括具有第一形貌的第一区域和具有第二形貌的第二区域。该方法包括以下步骤：在衬底上形成半导体堆叠，在半导体堆叠上形成电极层，热处理半导体堆叠，以及湿蚀刻半导体叠层的表面以形成粗糙表面。

26. 发明申请

US20110253979A1 LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：发光装置及其制造方法
公开(公告)号：US20110253979A1
公开(公告)日：2011-10-20
申请号：US13170360
申请日：2011-06-28
申请人： Chiu-Lin Yao , Ta-Cheng Hsu
发明人： Chiu-Lin Yao , Ta-Cheng Hsu
IPC分类号： H01L33/06 , H01L33/58
CPC分类号： H01L33/06 , H01L2933/0083
摘要： A light-emitting device and the method for making the same is disclosed. The light-emitting device is a semiconductor device, comprising a growth substrate, an n-type semiconductor layer, a quantum well active layer and a p-type semiconductor layer. It combines the holographic and the quantum well interdiffusion (QWI) to form a photonic crystal light-emitting device having a dielectric constant of two-dimensional periodic variation or a material composition of two-dimensional periodic variation in the quantum well active layer. The photonic crystal light-emitting devices can enhance the internal efficiency and light extraction efficiency.
摘要翻译：公开了一种发光器件及其制造方法。发光装置是包括生长衬底，n型半导体层，量子阱有源层和p型半导体层的半导体器件。它结合了全息和量子阱相互扩散（QWI）以形成具有二维周期性变化的介电常数或量子阱活性层中的二维周期性变化的材料组成的光子晶体发光器件。光子晶体发光器件可以提高内部效率和光提取效率。

27. 发明授权

US07968867B2 Light-emitting device and method for manufacturing the same 有权
标题翻译：发光装置及其制造方法
公开(公告)号：US07968867B2
公开(公告)日：2011-06-28
申请号：US12453183
申请日：2009-05-01
申请人： Chiu-Lin Yao , Ta-Cheng Hsu
发明人： Chiu-Lin Yao , Ta-Cheng Hsu
IPC分类号： H01L33/00
CPC分类号： H01L33/06 , H01L2933/0083
摘要： A light-emitting device and the method for making the same is disclosed. The light-emitting device is a semiconductor device, comprising a growth substrate, an n-type semiconductor layer, a quantum well active layer and a p-type semiconductor layer. It combines the holographic and the quantum well interdiffusion (QWI) to form a photonic crystal light-emitting device having a dielectric constant of two-dimensional periodic variation or a material composition of two-dimensional periodic variation in the quantum well active layer. The photonic crystal light-emitting devices can enhance the internal efficiency and light extraction efficiency.
摘要翻译：公开了一种发光器件及其制造方法。发光装置是包括生长衬底，n型半导体层，量子阱有源层和p型半导体层的半导体器件。它结合了全息和量子阱相互扩散（QWI）以形成具有二维周期性变化的介电常数或量子阱活性层中的二维周期性变化的材料组成的光子晶体发光器件。光子晶体发光器件可以提高内部效率和光提取效率。

28. 发明授权

US08502194B2 Light-emitting device 有权
标题翻译：发光装置
公开(公告)号：US08502194B2
公开(公告)日：2013-08-06
申请号：US13170360
申请日：2011-06-28
申请人： Chiu-Lin Yao , Ta-Cheng Hsu
发明人： Chiu-Lin Yao , Ta-Cheng Hsu
IPC分类号： H01L29/06
CPC分类号： H01L33/06 , H01L2933/0083
摘要： A light-emitting device and the method for making the same is disclosed. The light-emitting device is a semiconductor device, comprising a growth substrate, an n-type semiconductor layer, a quantum well active layer and a p-type semiconductor layer. It combines the holographic and the quantum well interdiffusion (QWI) to form a photonic crystal light-emitting device having a dielectric constant of two-dimensional periodic variation or a material composition of two-dimensional periodic variation in the quantum well active layer. The photonic crystal light-emitting devices can enhance the internal efficiency and light extraction efficiency.
摘要翻译：公开了一种发光器件及其制造方法。发光装置是包括生长衬底，n型半导体层，量子阱有源层和p型半导体层的半导体器件。它结合了全息和量子阱相互扩散（QWI）以形成具有二维周期性变化的介电常数或量子阱活性层中的二维周期性变化的材料组成的光子晶体发光器件。光子晶体发光器件可以提高内部效率和光提取效率。

29. 发明申请

US20110024789A1 LIGHT-EMITTING DEVICE HAVING A ROUGHENED SURFACE WITH DIFFERENT TOPOGRAPHIES 有权
标题翻译：具有不同形貌的粗糙表面的发光装置
公开(公告)号：US20110024789A1
公开(公告)日：2011-02-03
申请号：US12905795
申请日：2010-10-15
申请人： Chiu-Lin Yao , Ta-Cheng Hsu
发明人： Chiu-Lin Yao , Ta-Cheng Hsu
IPC分类号： H01L33/22
CPC分类号： H01L33/22 , H01L33/387 , H01L2933/0016
摘要： This invention provides an optoelectronic semiconductor device having a rough surface and the manufacturing method thereof. The optoelectronic semiconductor device comprises a semiconductor stack having a rough surface and an electrode layer overlaying the semiconductor stack. The rough surface comprises a first region having a first topography and a second region having a second topography. The method comprises the steps of forming a semiconductor stack on a substrate, forming an electrode layer on the semiconductor stack, thermal treating the semiconductor stack, and wet etching the surface of the semiconductor stack to form a rough surface.
摘要翻译：本发明提供一种具有粗糙表面的光电半导体器件及其制造方法。光电子半导体器件包括具有粗糙表面的半导体叠层和覆盖半导体叠层的电极层。粗糙表面包括具有第一形貌的第一区域和具有第二形貌的第二区域。该方法包括以下步骤：在衬底上形成半导体堆叠，在半导体堆叠上形成电极层，热处理半导体堆叠，以及湿蚀刻半导体叠层的表面以形成粗糙表面。

30. 发明申请

US20090272964A1 Light-emitting device and method for manufacturing the same 有权
标题翻译：发光装置及其制造方法
公开(公告)号：US20090272964A1
公开(公告)日：2009-11-05
申请号：US12453183
申请日：2009-05-01
申请人： Chiu-Lin Yao , Ta-Cheng Hsu
发明人： Chiu-Lin Yao , Ta-Cheng Hsu
IPC分类号： H01L29/06
CPC分类号： H01L33/06 , H01L2933/0083
摘要： A light-emitting device and the method for making the same is disclosed. The light-emitting device is a semiconductor device, comprising a growth substrate, an n-type semiconductor layer, a quantum well active layer and a p-type semiconductor layer. It combines the holographic and the quantum well interdiffusion (QWI) to form a photonic crystal light-emitting device having a dielectric constant of two-dimensional periodic variation or a material composition of two-dimensional periodic variation in the quantum well active layer. The photonic crystal light-emitting devices can enhance the internal efficiency and light extraction efficiency.
摘要翻译：公开了一种发光器件及其制造方法。发光装置是包括生长衬底，n型半导体层，量子阱有源层和p型半导体层的半导体器件。它结合了全息和量子阱相互扩散（QWI）以形成具有二维周期性变化的介电常数或量子阱活性层中的二维周期性变化的材料组成的光子晶体发光器件。光子晶体发光器件可以提高内部效率和光提取效率。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式