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21. 发明授权

US06685522B2 Magnetic field measuring system of deflection yoke 失效
标题翻译：偏转线圈磁场测量系统
公开(公告)号：US06685522B2
公开(公告)日：2004-02-03
申请号：US09877864
申请日：2001-06-08
申请人： In Jung Yun , Ho Jin Cho , Bong Woo Lee , Byung Hoon Kang , Kwang Yun Choi
发明人： In Jung Yun , Ho Jin Cho , Bong Woo Lee , Byung Hoon Kang , Kwang Yun Choi
IPC分类号： H01J942
CPC分类号： H01J9/42 , H01J29/76
摘要： Disclosed is a product quality test in a winding step of the entire manufacturing process of a deflection yoke, which is a core part of a display device employing a cathode ray tube such as a color TV or a monitor, and in particular, a winding zig for measuring magnetic fields of a deflection yoke and a magnetic field measuring system of a deflection yoke using the winding zig. The winding zig and the system according to the invention include a plurality of magnetic field sensors mounted inside of the A-shaped winding zig, a digital signal generator for receiving output signals from the magnetic field sensors that sense magnetic field characteristics of a deflection coil wound around the A-shaped winding zig, amplifying the received signals, and converting the amplified signals to digital signals, a digital signal interface for converting the data outputted from the digital signal generator to serial data, and a transmitter for receiving signals processed as serial data by the digital signal interface, and transmitting the received signals.
摘要翻译：公开了作为使用诸如彩色电视或监视器的阴极射线管的显示装置的核心部分的偏转线圈的整个制造过程中的卷绕步骤中的产品质量测试，特别地，绕组Zig 用于测量偏转线圈的磁场和使用绕组曲线的偏转线圈的磁场测量系统。根据本发明的绕组Zig和系统包括安装在A形绕组Zig内部的多个磁场传感器，一个数字信号发生器，用于接收来自磁场传感器的输出信号，该磁场传感器感测绕组的偏转线圈的磁场特性围绕A形绕组Zig放大接收到的信号，并将放大的信号转换成数字信号，用于将从数字信号发生器输出的数据转换为串行数据的数字信号接口，以及用于接收作为串行数据处理的信号的发送器通过数字信号接口，并发送接收到的信号。

22. 发明授权

US06437522B1 Method for controlling digital dynamic convergence and system thereof 失效
标题翻译：控制数字动态融合的方法及其系统
公开(公告)号：US06437522B1
公开(公告)日：2002-08-20
申请号：US09865749
申请日：2001-05-25
申请人： Bong Mo Moon , Ho Jin Cho , Ick Chan Shim
发明人： Bong Mo Moon , Ho Jin Cho , Ick Chan Shim
IPC分类号： H01J2951
CPC分类号： H04N17/04 , H04N5/68 , H04N9/28
摘要： The invention and method enable the astigmatism correction at each crossing point of a cross hatch pattern, thereby making high-resolution display possible. An appropriate voltage or current for controlling the magnetic field adjusting coils are generated from the correction data stored in a memory. The voltage or current generated are then applied to two poles, four poles or six poles during scanning of the screen.
摘要翻译：本发明和方法能够在交叉阴影图案的每个交叉点处进行像散校正，从而使得高分辨率显示成为可能。从存储在存储器中的校正数据产生用于控制磁场调节线圈的适当电压或电流。所产生的电压或电流在屏幕扫描期间被施加到两极，四极或六极。

23. 发明授权

US06319765B1 Method for fabricating a memory device with a high dielectric capacitor 失效
标题翻译：用于制造具有高介电电容器的存储器件的方法
公开(公告)号：US06319765B1
公开(公告)日：2001-11-20
申请号：US09473107
申请日：1999-12-28
申请人： Ho Jin Cho , Kwon Hong
发明人： Ho Jin Cho , Kwon Hong
IPC分类号： H01L218242
CPC分类号： H01L28/55 , C23C16/18 , H01L28/60
摘要： The present invention provides a method for fabricating a ferroelectric memory device to reduce manufacturing cost and to obtain the electric characteristic of capacitor. The method comprises the steps of: forming an intermetal insulating layer provided with a contact hole exposing a junction region formed on a semiconductor layer having the junction region; forming a contact plug within the contact hole; forming a barrier layer and a metal layer for lower electrode on the intermetal insulating layer successively; forming a lower electrode by patterning selected portions of the metal layer for lower electrode and the barrier layer; forming a high dielectric layer on the substrate on which the lower electrode is formed; and forming an upper electrode on the high dielectric layer, wherein during forming the upper electrode, an F ion layer to be trapped by dangling bonds formed at an interface between the upper electrode and the high dielectric layer, is formed at the interface.
摘要翻译：本发明提供一种制造铁电存储器件的方法，以降低制造成本并获得电容器的电特性。该方法包括以下步骤：形成金属间绝缘层，该金属间绝缘层设有暴露半导体上形成的结区的接触孔层具有接合区域; 在所述接触孔内形成接触塞; 在金属间绝缘层上形成用于下电极的阻挡层和金属层; 通过图案化用于下电极和阻挡层的金属层的选定部分来形成下电极; 在其上形成下电极的基板上形成高介电层; 以及在所述高电介质层上形成上电极，其中在形成所述上电极期间，在所述界面处形成要被形成在所述上电极和所述高电介质层之间的界面处的悬挂键捕获的F离子层。

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