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    • 23. 发明授权
    • Light-emitting diode array
    • 发光二极管阵列
    • US08421095B2
    • 2013-04-16
    • US13341414
    • 2011-12-30
    • Chao-Hsing Chen
    • Chao-Hsing Chen
    • H01L29/06H01L27/15H01L29/18H01L33/00
    • H01L25/0753H01L33/0079H01L33/44H01L2924/0002H01L2933/0066H01L2924/00
    • A method of fabricating a light emitting diode array, comprising: providing a temporary substrate; forming a first light emitting stack and a second light emitting stack on the temporary substrate; forming a first insulating layer covering partial of the first light emitting stack; forming a wire on the first insulating layer and electrically connecting to the first light emitting stack and the second light emitting stack; forming a second insulating layer fully covering the first light emitting stack, the wire and partial of the second light emitting stack; forming a metal connecting layer on the second insulating layer and electrically connecting to the second light emitting stack; forming a conductive substrate on the metal connecting layer; removing the temporary substrate; and forming a first electrode connecting to the first light emitting stack.
    • 一种制造发光二极管阵列的方法,包括:提供临时衬底; 在所述临时衬底上形成第一发光层和第二发光层; 形成覆盖所述第一发光叠层的部分的第一绝缘层; 在所述第一绝缘层上形成电线并电连接到所述第一发光堆叠和所述第二发光堆叠; 形成完全覆盖第一发光层的第二绝缘层,第二发光层的导线和部分; 在所述第二绝缘层上形成金属连接层,并电连接到所述第二发光堆叠; 在所述金属连接层上形成导电基板; 去除临时衬底; 以及形成连接到第一发光叠层的第一电极。
    • 24. 发明授权
    • Light-emitting device
    • 发光装置
    • US08405106B2
    • 2013-03-26
    • US12753551
    • 2010-04-02
    • Tzu-Chieh HsuChing-San TaoChen OuMin-Hsun HsiehChao-Hsing Chen
    • Tzu-Chieh HsuChing-San TaoChen OuMin-Hsun HsiehChao-Hsing Chen
    • H01L33/00
    • H01L33/20H01L33/10H01L33/22H01L33/382H01L33/405H01L33/42
    • A light-emitting device including: a light-emitting stacked layer having first conductivity type semiconductor layer, a light-emitting layer formed on the first conductivity type semiconductor layer, and a second conductivity type semiconductor layer formed on the light-emitting layer, wherein the upper surface of the second conductivity type semiconductor layer is a textured surface; a first planarization layer formed on a first partial of the upper surface of the second conductivity type semiconductor layer; a first transparent conductive oxide layer formed on the first planarization layer and a second partial of the second conductivity type semiconductor layer, including a first portion in contact with the first planarization layer and a second portion having a first plurality of cavities in contact with the second conductivity type semiconductor layer; and a first electrode formed on the first portion of the first transparent conductive oxide layer.
    • 一种发光器件,包括:具有第一导电类型半导体层的发光层叠层,形成在第一导电型半导体层上的发光层和形成在发光层上的第二导电型半导体层,其中, 第二导电类型半导体层的上表面是纹理表面; 形成在所述第二导电型半导体层的上表面的第一部分上的第一平坦化层; 形成在所述第一平坦化层上的第一透明导电氧化物层和所述第二导电类型半导体层的第二部分,所述第二导电类型半导体层包括与所述第一平坦化层接触的第一部分和具有与所述第二平坦化层接触的第一多个空腔的第二部分 导电型半导体层; 以及形成在第一透明导电氧化物层的第一部分上的第一电极。
    • 28. 发明授权
    • Light-emitting device
    • 发光装置
    • US08710515B2
    • 2014-04-29
    • US12874666
    • 2010-09-02
    • Chao-Hsing ChenSchang-Jing Hon
    • Chao-Hsing ChenSchang-Jing Hon
    • H01L33/00
    • H01L27/156H01L33/62H01L2224/48091H01L2924/12032H01L2924/00014H01L2924/00
    • This disclosure discloses a light-emitting device. The light-emitting device comprises: a substrate; and a first light-emitting unit comprising a plurality of light-emitting diodes electrically connected to each other on the substrate. A first light-emitting diode in the first light-emitting unit comprises a first semiconductor layer with a first conductivity-type, a second semiconductor layer with a second conductivity-type, and a light-emitting stack formed between the first and second semiconductor layers. The first light-emitting diode in the first light-emitting unit further comprises a first connecting layer on the first semiconductor layer for electrically connecting to a second light-emitting diode in the first light-emitting unit; a second connecting layer, separated from the first connecting layer, formed on the first semiconductor layer; and a third connecting layer on the second semiconductor layer for electrically connecting to a third light-emitting diode in the first light-emitting unit.
    • 本公开公开了一种发光装置。 发光装置包括:基板; 以及包括在所述基板上彼此电连接的多个发光二极管的第一发光单元。 第一发光单元中的第一发光二极管包括具有第一导电类型的第一半导体层,具有第二导电类型的第二半导体层和形成在第一和第二半导体层之间的发光叠层 。 第一发光单元中的第一发光二极管还包括在第一半导体层上的第一连接层,用于电连接到第一发光单元中的第二发光二极管; 与所述第一连接层分离的形成在所述第一半导体层上的第二连接层; 以及在第二半导体层上的第三连接层,用于电连接到第一发光单元中的第三发光二极管。