专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

21. 发明申请

US20070026677A1 Method for plasma etching performance enhancement 有权
标题翻译：等离子体蚀刻性能提高的方法
公开(公告)号：US20070026677A1
公开(公告)日：2007-02-01
申请号：US11508725
申请日：2006-08-22
申请人： Bing Ji , Erik Edelberg , Takumi Yanagawa , Zhisong Huang , Lumin Li
发明人： Bing Ji , Erik Edelberg , Takumi Yanagawa , Zhisong Huang , Lumin Li
IPC分类号： H01L21/302
CPC分类号： H01L21/31144 , H01L21/0337
摘要： A method for etching features in a dielectric layer is provided. A mask is formed over the dielectric layer. A protective silicon-containing coating is formed on exposed surfaces of the mask. The features are etched through the mask and protective silicon-containing coating. The features may be partially etched before the protective silicon-containing coating is formed.
摘要翻译：提供了一种用于蚀刻介电层中的特征的方法。在电介质层上形成掩模。在掩模的暴露表面上形成保护性含硅涂层。通过掩模和保护性含硅涂层蚀刻特征。在形成保护性含硅涂层之前，可以部分蚀刻特征。

22. 发明申请

US20060040054A1 Passivating ALD reactor chamber internal surfaces to prevent residue buildup 审中-公开
标题翻译：钝化ALD反应器室内表面以防止残留物积聚
公开(公告)号：US20060040054A1
公开(公告)日：2006-02-23
申请号：US10920541
申请日：2004-08-18
申请人： Ronald Pearlstein , Bing Ji , Stephen Motika
发明人： Ronald Pearlstein , Bing Ji , Stephen Motika
IPC分类号： C23C16/00
CPC分类号： C23C16/4404
摘要： This invention is directed to an improved method for preventing deposition residue buildup on the internal surfaces of an ALD reactor chamber. In an ALD deposition process, the surfaces of a substrate are treated with an initiating precursor generating a labile atom reactive with a deposition precursor. Excess initiating precursor is removed from the reactor and the substrate surface then is exposed to a deposition precursor reactive with the labile atom under conditions for generating a fugitive reaction product containing the labile atom and leaving a deposition product. The process is repeated generating alternate layers of initiation and deposition precursor reaction products. The improvement in the ALD process resides in passivating the internal surfaces of the reactor by removing labile atoms reactable with either the initiating or deposition precursors prior to effecting ALD deposition.
摘要翻译：本发明涉及一种用于防止在ALD反应器室的内表面上产生沉积残渣的改进方法。在ALD沉积工艺中，用起始前体处理底物的表面，产生与沉积前体反应的不稳定的原子。从反应器中除去过量的引发前体，然后在产生含有不稳定原子的离散反应产物并留下沉积产物的条件下将底物表面暴露于与不稳定原子反应的沉积前体。该过程重复产生起始和沉积前体反应产物的交替层。 ALD方法的改进在于通过在实现ALD沉积之前去除与起始或沉积前体可反应的不稳定原子来钝化反应器的内表面。

23. 发明申请

US20060027249A1 Method for removing carbon-containing residues from a substrate 失效
公开(公告)号：US20060027249A1
公开(公告)日：2006-02-09
申请号：US11178545
申请日：2005-07-12
申请人： Andrew Johnson , Hoshang Subawalla , Bing Ji , Raymond Vrtis , Eugene Karwacki , Robert Ridgeway , Peter Maroulis , Mark O'Neill , Aaron Lukas , Stephen Motika
发明人： Andrew Johnson , Hoshang Subawalla , Bing Ji , Raymond Vrtis , Eugene Karwacki , Robert Ridgeway , Peter Maroulis , Mark O'Neill , Aaron Lukas , Stephen Motika
IPC分类号： C25F5/00
CPC分类号： C23C16/4405
摘要： A process for removing carbon-containing residues from a substrate is described herein. In one aspect, there is provided a process for removing carbon-containing residue from at least a portion of a surface of a substrate comprising: providing a process gas comprising an oxygen source, a fluorine source, an and optionally additive gas wherein the molar ratio of oxygen to fluorine contained within the process gas ranges from about 1 to about 10; activating the process gas using at least one energy source to provide reactive species; and contacting the surface of the substrate with the reactive species to volatilize and remove the carbon-containing residue from the surface.

24. 发明授权

US08691701B2 Strip with reduced low-K dielectric damage 有权
标题翻译：具有降低的低K电介质损伤的带
公开(公告)号：US08691701B2
公开(公告)日：2014-04-08
申请号：US12463155
申请日：2009-05-08
申请人： Bing Ji , Andrew D. Bailey, III , Maryam Moravej , Stephen M. Sirard
发明人： Bing Ji , Andrew D. Bailey, III , Maryam Moravej , Stephen M. Sirard
IPC分类号： H01L21/302
CPC分类号： H01L21/31138 , G03F7/427 , H01L21/31116
摘要： A method for forming etched features in a low-k dielectric layer disposed below the photoresist mask in a plasma processing chamber is provided. Features are etched into the low-k dielectric layer through the photoresist mask. The photoresist mask is stripped, wherein the stripping comprising at least one cycle, wherein each cycle comprises a fluorocarbon stripping phase, comprising flowing a fluorocarbon stripping gas into the plasma processing chamber, forming a plasma from the fluorocarbon stripping gas, and stopping the flow of the fluorocarbon stripping gas into the plasma processing chamber and a reduced fluorocarbon stripping phase, comprising flowing a reduced fluorocarbon stripping gas that has a lower fluorocarbon flow rate than the fluorocarbon stripping gas into the plasma processing chamber, forming the plasma from the reduced fluorocarbon stripping gas, and stopping the flow of the reduced fluorocarbon stripping gas.
摘要翻译：提供了一种用于在等离子体处理室中的光致抗蚀剂掩模下方形成低k电介质层中形成蚀刻特征的方法。通过光致抗蚀剂掩模将特征蚀刻到低k电介质层中。剥离光致抗蚀剂掩模，其中剥离包括至少一个循环，其中每个循环包括氟碳汽提相，包括将氟碳汽提气体流入等离子体处理室，从氟碳汽提气体形成等离子体，并停止进入等离子体处理室中的碳氟化合物汽提气体和减少的氟碳汽提阶段，包括将具有低于碳氟化合物汽提气体的碳氟化合物流速低的氟化碳汽提气体流入等离子体处理室，从还原氟碳汽提气体形成等离子体，并停止还原氟烃剥离气体的流动。

25. 发明申请

US20080055484A1 IMAGE DEVICE TO REVERSE PLAY WITH MINIMAL TIME DELAY AND A METHOD THEREOF 有权
标题翻译：图像设备以最小的时间延迟回放播放及其方法
公开(公告)号：US20080055484A1
公开(公告)日：2008-03-06
申请号：US11690964
申请日：2007-03-26
申请人： Jeong-eun LIM , Kyung-ho Kim , Bing Ji
发明人： Jeong-eun LIM , Kyung-ho Kim , Bing Ji
IPC分类号： H04N9/64
CPC分类号： H04N5/783 , H04N5/781 , H04N5/85 , H04N9/8042
摘要： An image device capable of reverse play with minimal time delay, and a method thereof. The image device includes a buffer to store a greater number of pictures than constitute a single group of pictures (GOP), and a controller to operate the buffer to store decoded pictures. Accordingly, problems such as cutoff of pictures or time delays are minimized when performing reverse play.
摘要翻译：能够以最小的时间延迟进行反向播放的图像装置及其方法。图像装置包括用于存储比构成单个图像组（GOP）更多数量的图像的缓冲器，以及用于操作缓冲器以存储解码图像的控制器。因此，当执行反向播放时，诸如图片的切断或时间延迟等问题被最小化。

26. 发明申请

US20070006893A1 Free radical initiator in remote plasma chamber clean 审中-公开
标题翻译：自由基引发剂在远程等离子体室清洁
公开(公告)号：US20070006893A1
公开(公告)日：2007-01-11
申请号：US11177078
申请日：2005-07-08
申请人： Bing Ji
发明人： Bing Ji
IPC分类号： B08B6/00 , B08B3/00
CPC分类号： C23C16/4405 , H01J37/32357 , H01J37/32862
摘要： This invention relates to an improvement in the remote plasma cleaning of CVD process chambers and equipment from unwanted deposition byproducts formed on the walls, surfaces, etc. of such deposition process chambers and equipment. The improvement in the remote cleaning process resides in providing a free radical initiator downstream of the remote plasma generator employed for producing said plasma, said free radical initiator capable of forming free radicals in the presence of said plasma.
摘要翻译：本发明涉及CVD沉积处理室和设备的壁，表面等上形成的不希望的沉积副产物的CVD处理室和设备的远程等离子体清洗的改进。远程清洗过程的改进在于提供了用于产生所述等离子体的远程等离子体发生器下游的自由基引发剂，所述自由基引发剂能够在所述等离子体存在下形成自由基。

27. 发明申请

US20050014383A1 Use of hypofluorites, fluoroperoxides, and/or fluorotrioxides as oxidizing agent in fluorocarbon etch plasmas 审中-公开
标题翻译：在氟碳蚀刻等离子体中使用次氟酸盐，氟过氧化物和/或氟三氧化物作为氧化剂
公开(公告)号：US20050014383A1
公开(公告)日：2005-01-20
申请号：US10619922
申请日：2003-07-15
申请人： Bing Ji , Stephen Motika , Robert Syvret , Peter Badowski , Eugene Karwacki , Howard Withers , Ronald Pearlstein
发明人： Bing Ji , Stephen Motika , Robert Syvret , Peter Badowski , Eugene Karwacki , Howard Withers , Ronald Pearlstein
IPC分类号： H01L21/3065 , C09K13/08 , H01L21/311 , H01L21/302 , H01L21/461
CPC分类号： H01L21/31116
摘要： A mixture and a method comprising same for etching a dielectric material from a layered substrate are disclosed herein. Specifically, in one embodiment, there is provided a mixture for etching a dielectric material in a layered substrate comprising: a fluorocarbon gas, a fluorine-containing oxidizer gas selected from the group consisting of a hypofluorite, a fluoroperoxide, a fluorotrioxide, and combinations thereof; and optionally an inert diluent gas. The mixture of the present invention may be contacted with a layered substrate comprising a dielectric material under conditions sufficient to form active species that at least partially react with and remove at least a portion of the dielectric material.
摘要翻译：本文公开了一种用于从层状衬底蚀刻电介质材料的混合物及其方法。具体地说，在一个实施方案中，提供了一种用于蚀刻层状基板中的电介质材料的混合物，包括：碳氟化合物气体，选自次氟酸盐，氟过氧化物，氟三氧化物及其组合的含氟氧化剂气体 ; 和任选的惰性稀释气体。本发明的混合物可以在足以形成至少部分地与电介质材料的至少一部分反应并除去介电材料的至少一部分的活性物质的条件下与包含电介质材料的层状基板接触。

28. 发明授权

US08741165B2 Reducing twisting in ultra-high aspect ratio dielectric etch 有权
标题翻译：减少超高宽比电介质蚀刻的扭曲
公开(公告)号：US08741165B2
公开(公告)日：2014-06-03
申请号：US12900351
申请日：2010-10-07
申请人： Bing Ji , Erik A. Edelberg , Takumi Yanagawa
发明人： Bing Ji , Erik A. Edelberg , Takumi Yanagawa
IPC分类号： B44C1/22
CPC分类号： H01L21/31116 , H01J37/32091 , H01J37/32165
摘要： An apparatus for etching a dielectric layer contained by a substrate is provided. An etch reactor comprises a top electrode and a bottom electrode. An etch gas source supplies an etch gas into the etch reactor. A first Radio Frequency (RF) source generates a first RF power with a first frequency and supplies the first RF power into the etch reactor, whereas the first frequency is between 100 kilo Hertz (kHz) and 600 kHz. A second RF source generates a second RF power with a second frequency and supplies the second RF power into the etch reactor, whereas the second frequency is at least 10 mega Hertz (MHz).
摘要翻译：提供了一种用于蚀刻由基板包含的介电层的设备。蚀刻反应器包括顶部电极和底部电极。蚀刻气体源将蚀刻气体供应到蚀刻反应器中。第一射频（RF）源产生具有第一频率的第一RF功率，并将第一RF功率提供给蚀刻反应器，而第一频率在100千赫兹（kHz）和600kHz之间。第二RF源产生具有第二频率的第二RF功率，并将第二RF功率提供给蚀刻反应器，而第二频率为至少10兆赫兹（MHz）。

29. 发明授权

US07977390B2 Method for plasma etching performance enhancement 有权
标题翻译：等离子体蚀刻性能提高的方法
公开(公告)号：US07977390B2
公开(公告)日：2011-07-12
申请号：US11508725
申请日：2006-08-22
申请人： Bing Ji , Erik A. Edelberg , Takumi Yanagawa , Zhisong Huang , Lumin Li
发明人： Bing Ji , Erik A. Edelberg , Takumi Yanagawa , Zhisong Huang , Lumin Li
IPC分类号： B44C1/22 , H01L21/302
CPC分类号： H01L21/31144 , H01L21/0337
摘要： A method for etching features in a dielectric layer is provided. A mask is formed over the dielectric layer. A protective silicon-containing coating is formed on exposed surfaces of the mask. The features are etched through the mask and protective silicon-containing coating. The features may be partially etched before the protective silicon-containing coating is formed.
摘要翻译：提供了一种用于蚀刻介电层中的特征的方法。在电介质层上形成掩模。在掩模的暴露表面上形成保护性含硅涂层。通过掩模和保护性含硅涂层蚀刻特征。在形成保护性含硅涂层之前，可以部分蚀刻特征。

30. 发明申请

US20050011859A1 Unsaturated oxygenated fluorocarbons for selective aniostropic etch applications 审中-公开
标题翻译：用于选择性生物蚀刻应用的不饱和含氧碳氟化合物
公开(公告)号：US20050011859A1
公开(公告)日：2005-01-20
申请号：US10619911
申请日：2003-07-15
申请人： Bing Ji , Ronald Pearlstein , Robert Syvret , Peter Badowski , Stephen Motika , Eugene Karwacki , Kerry Berger
发明人： Bing Ji , Ronald Pearlstein , Robert Syvret , Peter Badowski , Stephen Motika , Eugene Karwacki , Kerry Berger
IPC分类号： H01L21/3065 , C09K13/08 , H01L21/311 , H01B13/00 , B44C1/22 , C03C15/00 , C03C25/68 , C23F1/00
CPC分类号： H01L21/31116
摘要： A mixture and a method comprising same for etching a dielectric material from a layered substrate are disclosed herein. Specifically, in one embodiment, there is provided a mixture for etching a dielectric material in a layered substrate comprising an unsaturated oxygenated fluorocarbon. The mixture of the present invention may be contacted with a layered substrate comprising a dielectric material under conditions sufficient to at least partially react with and remove at least a portion of the dielectric material. In another embodiment of the present invention, there is provided a method for making an unsaturated oxygenated fluorocarbon.
摘要翻译：本文公开了一种用于从层状衬底蚀刻电介质材料的混合物及其方法。具体地，在一个实施方案中，提供了一种用于在包含不饱和氧化碳氟化合物的层状基材中蚀刻电介质材料的混合物。本发明的混合物可以在包含电介质材料的层状基材上与足以至少部分地反应并除去至少一部分电介质材料的条件下接触。在本发明的另一个实施方案中，提供了制备不饱和氧化碳氟化合物的方法。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式