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21. 发明授权

US08366830B2 Susceptor apparatus for inverted type MOCVD reactor 有权
标题翻译：反型MOCVD反应器的受体装置
公开(公告)号：US08366830B2
公开(公告)日：2013-02-05
申请号：US10382198
申请日：2003-03-04
申请人： Shuji Nakamura , Steven DenBaars , Max Batres , Michael Coulter
发明人： Shuji Nakamura , Steven DenBaars , Max Batres , Michael Coulter
IPC分类号： H01L21/00 , C23C14/00 , C23C16/00
CPC分类号： C23C16/4584 , C23C16/4581 , C23C16/46 , C30B25/10 , C30B25/12
摘要： The present invention discloses a susceptor mounting assembly for holding semiconductor wafers in an MOCVD reactor during growth of epitaxial layers on the wafers, that is particularly adapted for mounting a susceptor in an inverted type reactor chamber. It includes a tower having an upper and lower end with the upper end mounted to the top inside surface of the reactor chamber and a susceptor is arranged at the tower's lower end. Semiconductor wafers are held adjacent to the susceptor such that heat from the susceptor passes into wafers. A second embodiment of a susceptor mounting assembly according to the invention also comprises a tower having an upper and lower end. The tower's upper end is mounted to the top inside surface of the reactor chamber. A susceptor is housed within a cup and the cup is mounted to the tower's lower end.
摘要翻译：本发明公开了一种用于在晶圆上生长外延层期间将半导体晶片保持在MOCVD反应器中的基座安装组件，其特别适用于将基座安装在倒置型反应室中。它包括具有上端和下端的塔，其上端安装到反应室的顶部内表面，并且基座设置在塔的下端。半导体晶片被保持在基座附近，使得来自基座的热量进入晶片。根据本发明的基座安装组件的第二实施例还包括具有上端和下端的塔。塔的上端安装在反应室的顶部内表面。托架被容纳在一个杯子内，杯子安装在塔的下端。

22. 发明申请

US20060284206A1 Packaging technique for the fabrication of polarized light emitting diodes 有权
公开(公告)号：US20060284206A1
公开(公告)日：2006-12-21
申请号：US11472186
申请日：2006-06-21
申请人： Hisashi Masui , Shuji Nakamura , Steven DenBaars
发明人： Hisashi Masui , Shuji Nakamura , Steven DenBaars
IPC分类号： H01L33/00
CPC分类号： H01L33/16 , G02F1/133603 , G02F1/13362 , H01L23/544 , H01L33/20 , H01L33/483 , H01L2223/54426 , H01L2223/54473 , H01L2223/54486 , H01L2924/0002 , H01L2924/00
摘要： A polarized light emitting diode (LED) includes a marker indicating a polarization direction. A package for the LED also includes a marker indicating the polarization direction. The markers on the LED and package are used for mutual alignment, wherein the LED is attached in a favorable orientation with respect to a package, so that the polarization direction of emitted light from the package is apparent. The marker is placed on the LED before die separation and the marker is placed on the package before alignment. The marker on the LED comprises a photolithographic pattern, an asymmetric die shape, a notch on the die, or a scratch on the die, while the marker on the package comprises an electrode shape or pattern, an asymmetric package shape, a notch on the package, or a scratch on the package. Finally, the LED or package may be installed in an external circuit or system that also indicates the polarization direction.

23. 发明申请

US20060054905A1 White, single or multi-color light emitting diodes by recycling guided modes 失效
标题翻译：白色，单色或多色发光二极管通过回收引导模式
公开(公告)号：US20060054905A1
公开(公告)日：2006-03-16
申请号：US10938704
申请日：2004-09-10
申请人： Carole Schwach , Claude Weisbuch , Steven DenBaars , Henri Benisty , Shuji Nakamura
发明人： Carole Schwach , Claude Weisbuch , Steven DenBaars , Henri Benisty , Shuji Nakamura
IPC分类号： H01L21/00 , H01L33/00
CPC分类号： H01L33/08 , H01L33/10 , H01L33/20 , H01L33/22 , H01L33/32 , H01L33/405 , H01L33/505
摘要： A white, single or multi-color light emitting diode (LED) includes a mirror for reflecting photons within the LED; a first active region, adjacent the mirror, including one or more current-injected layers for emitting photons when electrically biased in a forward direction; a second active region, adjacent the first active region, including one or more optically-pumped layers for emitting photons, wherein the optically-pumped layers are optically excited by the photons emitted by the current-injected layers, thereby recycling guided modes; and an output interface, adjacent the second active region, for allowing the photons emitted by the optically-pumped layers to escape the LED as emitted light.
摘要翻译：白色，单色或多色发光二极管（LED）包括用于反射LED内的光子的反射镜; 邻近反射镜的第一有源区，包括一个或多个电流注入层，用于在向前方向上电偏置时发射光子; 邻近第一有源区的第二有源区，包括用于发射光子的一个或多个光学泵浦层，其中光泵浦层被电流注入层发射的光子激发，从而循环引导模式; 以及与第二有源区相邻的输出接口，用于允许由光泵浦层发射的光子作为发射光而逸出LED。

24. 发明申请

US20060049411A1 Method for fabricating group-III nitride devices and devices fabricated using method 有权
标题翻译：使用方法制造III族氮化物器件的方法和器件
公开(公告)号：US20060049411A1
公开(公告)日：2006-03-09
申请号：US10848937
申请日：2004-05-18
申请人： Shuji Nakamura , Steven DenBaars , John Edmond , Chuck Swoboda , Umesh Mishra
发明人： Shuji Nakamura , Steven DenBaars , John Edmond , Chuck Swoboda , Umesh Mishra
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： H01L33/465 , H01L33/0079 , H01L33/105 , H01L33/145 , H01L33/32 , H01L33/38 , H01L2933/0016
摘要： A method according to the present invention for fabricating high light extraction photonic devices comprising growing an epitaxial semiconductor structure on a substrate and depositing a first mirror layer on the epitaxial semiconductor structure such that the epitaxial semiconductor structure is sandwiched between the first mirror layer and the substrate. Flip-chip mounting the epitaxial semiconductor structure, with its first mirror and substrate on a submount such that the epitaxial semiconductor device structure is sandwiched between the submount and substrate. The substrate is then removed from the epitaxial structure by introducing an etch environment to the substrate. A second mirror layer is deposited on the epitaxial semiconductor structure such that the epitaxial semiconductor structure is sandwiched between the first and second mirror layers. A device according to the present invention comprising a resonant cavity light emitting diode (RCLED) mounted to a submount.
摘要翻译：根据本发明的用于制造高光提取光子器件的方法，包括在衬底上生长外延半导体结构并在外延半导体结构上沉积第一镜面层，使得外延半导体结构夹在第一镜面层和衬底之间。倒装芯片将外延半导体结构安装，其第一反射镜和衬底位于基座上，使得外延半导体器件结构夹在底座和衬底之间。然后通过向衬底引入蚀刻环境，从衬底去除衬底。第二镜层沉积在外延半导体结构上，使得外延半导体结构夹在第一和第二镜层之间。根据本发明的装置包括安装到底座的谐振腔发光二极管（RCLED）。

25. 发明申请

US20060270076A1 Defect reduction of non-polar and semi-polar III-nitrides with sidewall lateral epitaxial overgrowth (SLEO) 有权
标题翻译：具有侧壁侧向外延生长（SLEO）的非极性和半极性III-氮化物的缺陷还原
公开(公告)号：US20060270076A1
公开(公告)日：2006-11-30
申请号：US11444084
申请日：2006-05-31
申请人： Bilge Imer , James Speck , Steven DenBaars
发明人： Bilge Imer , James Speck , Steven DenBaars
IPC分类号： H01L21/00
CPC分类号： H01L21/02609 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/02516 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/02647 , H01L21/0265
摘要： A method of reducing threading dislocation densities in non-polar such as a-{11-20} plane and m-{1-100} plane or semi-polar such as {10-1n} plane III-Nitrides by employing lateral epitaxial overgrowth from sidewalls of etched template material through a patterned mask. The method includes depositing a patterned mask on a template material such as a non-polar or semi polar GaN template, etching the template material down to various depths through openings in the mask, and growing non-polar or semi-polar III-Nitride by coalescing laterally from the tops of the sidewalls before the vertically growing material from the trench bottoms reaches the tops of the sidewalls. The coalesced features grow through the openings of the mask, and grow laterally over the dielectric mask until a fully coalesced continuous film is achieved.
摘要翻译：通过使用横向外延过度生长，减少非极性（例如 - {11-20}面和m- {1-100}面或半极性，例如{10-1n}面III-氮化物）的穿透位错密度的方法从蚀刻的模板材料的侧壁通过图案化掩模。该方法包括在诸如非极性或半极性GaN模板的模板材料上沉积图案化掩模，通过掩模中的开口将模板材料蚀刻到各种深度，以及通过掩模中的开口生长非极性或半极性III-氮化物在来自沟槽底部的垂直生长的材料到达侧壁的顶部之前，从侧壁的顶部侧向聚结。聚结的特征通过掩模的开口生长，并且在介电掩模上横向生长，直到实现完全聚结的连续膜。

26. 发明申请

US20060202226A1 Single or multi-color high efficiency light emitting diode (LED) by growth over a patterned substrate 有权
标题翻译：单一或多色高效率发光二极管（LED）通过在图案化衬底上生长
公开(公告)号：US20060202226A1
公开(公告)日：2006-09-14
申请号：US11067910
申请日：2005-02-28
申请人： Claude Weisbuch , Aurelien David , James Speck , Steven DenBaars
发明人： Claude Weisbuch , Aurelien David , James Speck , Steven DenBaars
IPC分类号： H01L33/00
CPC分类号： H01L33/20 , H01L33/22 , H01L33/24 , H01L2933/0083
摘要： A single or multi-color light emitting diode (LED) with high extraction efficiency is comprised of a substrate, a buffer layer formed on the substrate, one or more patterned layers deposited on top of the buffer layer, and one or more active layers formed on or between the patterned layers, for example by Lateral Epitaxial Overgrowth (LEO), and including one or more light emitting species, such as quantum wells. The patterned layers include a patterned, perforated or pierced mask made of insulating, semiconducting or metallic material, and materials filling holes in the mask. The patterned layer acts as an optical confining layer due to a contrast of a refractive index with the active layer and/or as a buried diffraction grating due to variation of a refractive index between the mask and the material filling the holes in the mask.
摘要翻译：具有高提取效率的单色或多色发光二极管（LED）由衬底，形成在衬底上的缓冲层，沉积在缓冲层顶部上的一个或多个图案化层和形成的一个或多个有源层组成在图案化层之间或之间，例如通过横向外延生长（LEO），并且包括一个或多个发光物质，例如量子阱。图案化层包括由绝缘，半导体或金属材料制成的图案化，穿孔或穿孔掩模，以及填充掩模中的孔的材料。由于掩模和填充掩模中的孔的材料之间的折射率的变化，由于折射率与有源层和/或作为掩埋衍射光栅的对比，图案化层用作光学限制层。

27. 发明授权

US08133322B2 Apparatus for inverted multi-wafer MOCVD fabrication 有权
标题翻译：倒装多晶圆MOCVD制造装置
公开(公告)号：US08133322B2
公开(公告)日：2012-03-13
申请号：US10256814
申请日：2002-09-27
申请人： Shuji Nakamura , Steven DenBaars , Max Batres , Michael Coulter
发明人： Shuji Nakamura , Steven DenBaars , Max Batres , Michael Coulter
IPC分类号： C23C16/455 , C23C16/458 , C23C16/46 , C23C16/06 , C23C16/22
CPC分类号： C23C16/45565 , C23C16/455 , C23C16/45502 , C23C16/4584 , C30B25/10 , C30B25/14
摘要： A semiconductor fabrication reactor according to the invention comprises a rotatable susceptor mounted to the top of a reactor chamber. One or more wafers are mounted to a surface of the susceptor and the rotation of the susceptor causes the wafers to rotate within the chamber. A heater heats the susceptor and a chamber gas inlet allows semiconductor growth gasses into the reactor chamber to deposit semiconductor material on said wafers. A chamber gas outlet is included to allow growth gasses to exit the chamber. In a preferred embodiment, the inlet is at or below the level of said wafers and the outlet is preferably at or above the level of the wafers. A semiconductor fabrication system according to the invention comprises a source of gasses for forming epitaxial layers on wafers and a source of gasses for dopants in said epitaxial layers. A gas line carries the dopant and epitaxial source gasses to a reactor for growing semiconductor devices on wafers, and the source gasses in the gas line are injected into the reactor chamber through a reactor inlet. The reactor comprises an inverted susceptor mounted in a reactor chamber that is capable of rotating. One or more wafers are mounted to a surface of the susceptor, the rotation of the susceptor causing the wafers to rotate within the chamber. A heater heats the susceptor and the source gasses deposit semiconductor material on the wafers.
摘要翻译：根据本发明的半导体制造反应器包括安装到反应器室的顶部的可旋转基座。将一个或多个晶片安装到基座的表面，并且基座的旋转导致晶片在腔室内旋转。加热器加热基座，腔室气体入口允许半导体生长气体进入反应器室以将半导体材料沉积在所述晶片上。包括室气体出口以允许生长气体离开室。在优选实施例中，入口处于或低于所述晶片的水平面，并且出口优选地处于或高于晶片的水平面。根据本发明的半导体制造系统包括用于在晶片上形成外延层的气体源和用于所述外延层中的掺杂剂的气体源。气体管线将掺杂剂和外延源气体输送到用于在晶片上生长半导体器件的反应器，并且气体管线中的源气体通过反应器入口注入反应器室。反应器包括安装在能够旋转的反应器室中的反转基座。一个或多个晶片被安装到基座的表面，基座的旋转导致晶片在腔室内旋转。加热器加热基座和源气体将半导体材料沉积在晶片上。

28. 发明授权

US07332365B2 Method for fabricating group-III nitride devices and devices fabricated using method 有权
标题翻译：使用方法制造III族氮化物器件的方法和器件
公开(公告)号：US07332365B2
公开(公告)日：2008-02-19
申请号：US10848937
申请日：2004-05-18
申请人： Shuji Nakamura , Steven DenBaars , John Edmond , Chuck Swoboda , Umesh Mishra
发明人： Shuji Nakamura , Steven DenBaars , John Edmond , Chuck Swoboda , Umesh Mishra
IPC分类号： H01L21/00 , H01L33/00
CPC分类号： H01L33/465 , H01L33/0079 , H01L33/105 , H01L33/145 , H01L33/32 , H01L33/38 , H01L2933/0016
摘要： A method according to the present invention for fabricating high light extraction photonic devices comprising growing an epitaxial semiconductor structure on a substrate and depositing a first mirror layer on the epitaxial semiconductor structure such that the epitaxial semiconductor structure is sandwiched between the first mirror layer and the substrate. Flip-chip mounting the epitaxial semiconductor structure, with its first mirror and substrate on a submount such that the epitaxial semiconductor device structure is sandwiched between the submount and substrate. The substrate is then removed from the epitaxial structure by introducing an etch environment to the substrate. A second mirror layer is deposited on the epitaxial semiconductor structure such that the epitaxial semiconductor structure is sandwiched between the first and second mirror layers. A device according to the present invention comprising a resonant cavity light emitting diode (RCLED) mounted to a submount.
摘要翻译：根据本发明的用于制造高光提取光子器件的方法，包括在衬底上生长外延半导体结构并在外延半导体结构上沉积第一镜面层，使得外延半导体结构夹在第一镜面层和衬底之间。倒装芯片安装外延半导体结构，其第一反射镜和衬底位于基座上，使得外延半导体器件结构夹在基座和衬底之间。然后通过向衬底引入蚀刻环境，从衬底去除衬底。第二镜层沉积在外延半导体结构上，使得外延半导体结构夹在第一和第二镜层之间。根据本发明的装置包括安装到底座的谐振腔发光二极管（RCLED）。

29. 发明申请

US20070190758A1 METHOD FOR CONDUCTIVITY CONTROL OF (Al,In,Ga,B)N 有权
标题翻译：（Al，In，Ga，B）N的电导率控制方法
公开(公告)号：US20070190758A1
公开(公告)日：2007-08-16
申请号：US11673426
申请日：2007-02-09
申请人： John Kaeding , Hitoshi Sato , Michael Iza , Hirokuni Asamizu , Hong Zhong , Steven DenBaars , Shuji Nakamura
发明人： John Kaeding , Hitoshi Sato , Michael Iza , Hirokuni Asamizu , Hong Zhong , Steven DenBaars , Shuji Nakamura
IPC分类号： H01L21/04 , H01L29/15
CPC分类号： H01L21/2654 , H01L21/0242 , H01L21/02433 , H01L21/0254 , H01L21/02579 , H01L21/02609 , H01L21/0262 , H01L29/045 , H01L29/2003 , H01L29/207
摘要： A method of controlled p-type conductivity in (Al,In,Ga,B)N semiconductor crystals. Examples include {10 11} GaN films deposited on {100} MgAl2O4 spinel substrate miscut in the direction. Mg atoms may be intentionally incorporated in the growing semipolar nitride thin film to introduce available electronic states in the band structure of the semiconductor crystal, resulting in p-type conductivity. Other impurity atoms, such as Zn or C, which result in a similar introduction of suitable electronic states, may also be used.
摘要翻译：（Al，In，Ga，B）N半导体晶体中受控p型导电性的方法。实例包括在{011}方向沉积在{100} MgAl 2+ 4+尖晶石衬底上的{10 11} GaN膜。可以有意地将Mg原子并入生长的半极性氮化物薄膜中以在半导体晶体的带结构中引入可用的电子态，导致p型导电性。也可以使用导致类似的合适电子状态引入的其它杂质原子，例如Zn或C。

30. 发明申请

US20070102721A1 High light extraction efficiency light emitting diode (LED) 有权
标题翻译：高光提取效率发光二极管（LED）
公开(公告)号：US20070102721A1
公开(公告)日：2007-05-10
申请号：US11593268
申请日：2006-11-06
申请人： Steven DenBaars , Shuji Nakamura , Hisashi Masui , Natalie Fellows , Akihiko Murai
发明人： Steven DenBaars , Shuji Nakamura , Hisashi Masui , Natalie Fellows , Akihiko Murai
IPC分类号： H01L33/00
CPC分类号： H01L33/58 , H01L33/007 , H01L33/20 , H01L33/26 , H01L33/60
摘要： An (Al, Ga, In)N and ZnO direct wafer bonded light emitting diode (LED) combined with a shaped plastic optical element, in which the directional light from the ZnO cone, or from any high refractive index material in contact with the LED surface, entering the shaped plastic optical element is extracted to air.
摘要翻译：一种（Al，Ga，In）N和ZnO直接晶圆键合发光二极管（LED）与成形塑料光学元件组合，其中来自ZnO圆锥的定向光或与LED接触的任何高折射率材料表面，进入成形塑料光学元件被抽取到空气中。

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