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    • 30. 发明授权
    • Shift register unit, gate driving apparatus and display device
    • 移位寄存器单元,门驱动装置和显示装置
    • US09502135B2
    • 2016-11-22
    • US14370419
    • 2013-05-21
    • BOE TECHNOLOGY GROUP CO., LTD.HEFEI BOE OPTOELECTRONICS TECHNOLOGY CO., LTD.
    • Mian ZengXiaohe LiJaikwang Kim
    • G11C19/00G11C19/28G09G3/20G09G3/36
    • G11C19/28G09G3/20G09G3/3648G09G2300/0809G09G2310/0267G09G2310/0286G09G2320/043
    • Provided is a shift register unit, a gate driving apparatus and a display device capable of increasing a lifespan of a shift register. The shift register unit according to the present disclosure includes: a first thin film field effect transistor, a drain thereof connected with a first signal terminal, a source thereof connected with the outputting node at the present stage, a gate thereof connected with a first node; a second thin film field effect transistor, a drain thereof connected with the first signal terminal, a source thereof connected with the pulling-up node, and a gate thereof connected with the first node; a third thin film field effect transistor, a drain thereof connected with a second signal terminal, a source thereof connected with the outputting node at the present stage, and a gate thereof connected with a second node; a fourth thin film field effect transistor, a drain thereof connected with the second signal terminal, a source thereof connected with the pulling-up node, and a gate thereof connected with the second node; and a node voltage control module, configured to control the first node and the second node to be in a high potential state alternatively when the shift register unit is in a pulling-down phase. The present disclosure increases the lifespan of the shift register.
    • 提供了能够增加移位寄存器的寿命的移位寄存器单元,门驱动装置和显示装置。 根据本公开的移位寄存器单元包括:第一薄膜场效应晶体管,其与第一信号端子连接的漏极,其与当前级输出节点连接的源极,其与第一节点 ; 第二薄膜场效应晶体管,其漏极与第一信号端子连接,其源极与上拉节点连接,其栅极与第一节点连接; 第三薄膜场效应晶体管,其漏极与第二信号端子连接,其源与当前阶段的输出节点连接,其栅极与第二节点连接; 第四薄膜场效应晶体管,其漏极与第二信号端子连接,其源极与上拉节点连接,其栅极与第二节点连接; 以及节点电压控制模块,被配置为当所述移位寄存器单元处于下拉阶段时,交替地控制所述第一节点和所述第二节点处于高电位状态。 本公开增加了移位寄存器的寿命。