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    • 23. 发明授权
    • Method of producing ferroelectric capacitor
    • 铁电电容器的制造方法
    • US07157288B2
    • 2007-01-02
    • US11105439
    • 2005-04-14
    • Toshio Ito
    • Toshio Ito
    • H01L21/00
    • H01L21/32139H01L21/31111H01L21/31144H01L27/11502H01L27/11507H01L28/55H01L28/65
    • A method of producing a ferroelectric capacitor includes the steps of: preparing a semiconductor substrate; forming a first insulating layer on the semiconductor substrate; laminating sequentially a metal layer, a first conductive layer, a ferroelectric layer, and a second conductive layer on the first insulating layer to form a capacitor forming laminated layer; forming an etching mask forming layer with strontium tantalate or strontium niobate; forming a silicon oxide layer on the etching mask forming layer for covering a ferroelectric capacitor forming area; forming an etching mask through wet etching of the etching mask forming layer with the silicon oxide layer; and forming a lamination formed of a barrier metal, a lower electrode, a ferroelectric layer, and an upper electrode through dry etching of the capacitor forming laminated layer with the etching mask.
    • 制造铁电电容器的方法包括以下步骤:制备半导体衬底; 在所述半导体衬底上形成第一绝缘层; 在第一绝缘层上依次层叠金属层,第一导电层,铁电层和第二导电层,形成电容器形成叠层; 用钽酸锶或铌酸锶形成蚀刻掩模形成层; 在用于覆盖铁电电容器形成区域的蚀刻掩模形成层上形成氧化硅层; 通过用氧化硅层对蚀刻掩模形成层进行湿蚀刻来形成蚀刻掩模; 以及通过用蚀刻掩模对形成电容器的层叠层进行干蚀刻来形成由阻挡金属,下电极,铁电体层和上电极形成的叠层。