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    • 21. 发明申请
    • Quantum cascade laser
    • 量子级联激光器
    • US20080069164A1
    • 2008-03-20
    • US11979294
    • 2007-11-01
    • Tadataka EdamuraNaota Akikusa
    • Tadataka EdamuraNaota Akikusa
    • H01S5/343
    • B82Y20/00H01S5/32366H01S5/3402H01S5/34313
    • A quantum cascade laser 1, which generates infrared light or other light of a predetermined wavelength by making use of intersubband transitions in a quantum well structure, is arranged by forming, on a GaAs substrate 10, an AlGaAs/GaAs active layer 11 having a cascade structure in which quantum well light emitting layers and injection layers are laminated alternately. Also, at the GaAs substrate 10 side and the side opposite the GaAs substrate 10 side of active layer 11, is provided a waveguide structure, comprising waveguide core layers 12 and 14, each being formed of an n-type GaInNAs layer, which is a group III-V compound semiconductor that contains N (nitrogen), formed so as to be lattice matched with the GaAs substrate 10, and waveguide clad layers 13 and 15, each formed of an n++-type GaAs layer. A quantum cascade laser, with which the waveguide loss of generated light in the laser is reduced, is thereby realized.
    • 通过在GaAs衬底10上形成具有级联的AlGaAs / GaAs活性层11,通过在量子阱结构中利用子带间跃迁来产生预定波长的红外光或其他光的量子级联激光器1 量子阱发光层和注入层交替层叠的结构。 此外,在GaAs衬底10侧和与有源层11的GaAs衬底10侧相对的一侧提供波导结构,其包括波导芯层12和14,每个波导芯层12和14由n型GaInNA层形成,其为 形成为与GaAs衬底10晶格匹配的N(氮)的III-V族化合物半导体以及由n + GaAs层。 从而实现了激光器中产生的光的波导损耗减小的量子级联激光器。
    • 23. 发明授权
    • Quantum cascade laser
    • 量子级联激光器
    • US07756178B2
    • 2010-07-13
    • US11979294
    • 2007-11-01
    • Tadataka EdamuraNaota Akikusa
    • Tadataka EdamuraNaota Akikusa
    • H01S5/00
    • B82Y20/00H01S5/32366H01S5/3402H01S5/34313
    • A quantum cascade laser 1, which generates infrared light or other light of a predetermined wavelength by making use of intersubband transitions in a quantum well structure, is arranged by forming, on a GaAs substrate 10, an AlGaAs/GaAs active layer 11 having a cascade structure in which quantum well light emitting layers and injection layers are laminated alternately. Also, at the GaAs substrate 10 side and the side opposite the GaAs substrate 10 side of active layer 11, is provided a waveguide structure, comprising waveguide core layers 12 and 14, each being formed of an n-type GaInNAs layer, which is a group III-V compound semiconductor that contains N (nitrogen), formed so as to be lattice matched with the GaAs substrate 10, and waveguide clad layers 13 and 15, each formed of an n++-type GaAs layer. A quantum cascade laser, with which the waveguide loss of generated light in the laser is reduced, is thereby realized.
    • 通过在GaAs衬底10上形成具有级联的AlGaAs / GaAs活性层11,通过在量子阱结构中利用子带间跃迁来产生预定波长的红外光或其他光的量子级联激光器1 量子阱发光层和注入层交替层叠的结构。 此外,在GaAs衬底10侧和与有源层11的GaAs衬底10侧相对的一侧提供波导结构,其包括波导芯层12和14,每个波导芯层12和14由n型GaInNA层形成,其为 形成为与GaAs衬底10晶格匹配的N(氮)的III-V族化合物半导体以及由n ++型GaAs层形成的波导覆层13和15。 从而实现了激光器中产生的光的波导损耗减小的量子级联激光器。
    • 24. 发明申请
    • DENTAL THERAPY APPARATUS
    • 牙科治疗装置
    • US20140030671A1
    • 2014-01-30
    • US14110837
    • 2012-05-17
    • Kunio AwazuKatsunori IshiiNaota AkikusaTadataka EdamuraHirofumi Kan
    • Kunio AwazuKatsunori IshiiNaota AkikusaTadataka EdamuraHirofumi Kan
    • A61C1/00
    • A61C1/0046A61C1/0015A61C3/02
    • A dental therapy apparatus which enables a dental therapy more surely and less invasively is provided. A dental therapy apparatus (10A) comprises a laser light source (11) emitting laser light (L) having a wavelength within a wavelength region of 5.7 to 6.6 μm; a controller (12) pulse-driving the laser light source and controlling at least one of pulse width and repetition frequency of pulsed laser light emitted from the laser light source; and an irradiation optical system for irradiating a tooth (20) including a carious part (21) with the light emitted from the laser light source. In this dental therapy apparatus, the controller controls at least one of the pulse width and repetition frequency of the pulsed light, so as to selectively cut the carious part (21).
    • 提供一种能够更可靠且更少地侵入牙科治疗的牙科治疗装置。 牙科治疗仪(10A)包括发射波长在5.7〜6.6μm波长范围内的激光(L)的激光光源(11) 控制器(12)对激光光源进行脉冲驱动,并控制从激光光源发射的脉冲激光的脉冲宽度和重复频率中的至少一个; 以及照射光学系统,用于利用从激光光源发出的光来照射包括龋齿部分(21)的牙齿(20)。 在该牙科治疗装置中,控制器控制脉冲光的脉冲宽度和重复频率中的至少一个,以选择性地切割龋齿部分(21)。
    • 25. 发明授权
    • Quantum cascade laser
    • 量子级联激光器
    • US07359418B2
    • 2008-04-15
    • US10776615
    • 2004-02-12
    • Tadataka EdamuraNaota Akikusa
    • Tadataka EdamuraNaota Akikusa
    • H01S5/00
    • B82Y20/00H01S5/32366H01S5/3402H01S5/34313
    • A quantum cascade laser 1, which generates infrared light or other light of a predetermined wavelength by making use of intersubband transitions in a quantum well structure, is arranged by forming, on a GaAs substrate 10, an AlGaAs/GaAs active layer 11 having a cascade structure in which quantum well light emitting layers and injection layers are laminated alternately. Also, at the GaAs substrate 10 side and the side opposite the GaAs substrate 10 side of active layer 11, is provided a waveguide structure, comprising waveguide core layers 12 and 14, each being formed of an n-type GaInNAs layer, which is a group III-V compound semiconductor that contains N (nitrogen), formed so as to be lattice matched with the GaAs substrate 10, and waveguide clad layers 13 and 15, each formed of an n++-type GaAs layer. A quantum cascade laser, with which the waveguide loss of generated light in the laser is reduced, is thereby realized.
    • 通过在GaAs衬底10上形成具有级联的AlGaAs / GaAs活性层11,通过在量子阱结构中利用子带间跃迁来产生预定波长的红外光或其他光的量子级联激光器1 量子阱发光层和注入层交替层叠的结构。 此外,在GaAs衬底10侧和与有源层11的GaAs衬底10侧相对的一侧提供波导结构,其包括波导芯层12和14,每个波导芯层12和14由n型GaInNA层形成,其为 形成为与GaAs衬底10晶格匹配的N(氮)的III-V族化合物半导体以及由n + GaAs层。 从而实现了激光器中产生的光的波导损耗减小的量子级联激光器。