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21. 发明授权

US07986075B2 Film bulk acoustic wave resonator, its fabrication method and film bulk acoustic wave resonator filter using the resonator 失效
标题翻译：薄膜体声波谐振器，其制造方法和使用谐振器的薄膜体声波谐振器滤波器
公开(公告)号：US07986075B2
公开(公告)日：2011-07-26
申请号：US12292448
申请日：2008-11-19
申请人： Kengo Asai , Hisanori Matsumoto , Atsushi Isobe
发明人： Kengo Asai , Hisanori Matsumoto , Atsushi Isobe
IPC分类号： H01L41/08
CPC分类号： H03H9/173 , H03H3/02 , H03H9/0514 , H03H9/132 , H03H9/172 , H03H2003/021 , Y10T29/42
摘要： The film bulk acoustic wave resonator includes a laminate structure composed of a piezoelectric layer, and first and second electrode layers interposing at least part of the piezoelectric layer, in which the first metal electrode is dispersively formed on an electrode plane facing the second metal electrode, and a gap is formed in a substrate correspondingly to the laminate-structured resonance part. Except for an area of a wire electrode electrically connected to the first electrode layer and an area of a wire electrode electrically connected to the second electrode layer, the piezoelectric layer, first electrode layer and second electrode layer do not come in contact with the insulating substrate but are supported on a hollow. Also, a prop is formed in the gap to support the laminate structure.
摘要翻译：薄膜体声波谐振器包括由压电层构成的叠层结构，以及插入至少部分压电层的第一和第二电极层，其中第一金属电极分散地形成在面向第二金属电极的电极平面上，并且与层叠结构的共振部相对应地在基板上形成间隙。除了电连接到第一电极层的线电极的区域和与第二电极层电连接的线电极的区域之外，压电层，第一电极层和第二电极层不与绝缘衬底接触但是在一个空心处被支撑。此外，在间隙中形成支撑以支撑层压结构。

22. 发明授权

US07915793B2 Thin film tuning-fork type inflection resonator and electric signal processing element 失效
标题翻译：薄膜音叉型变形谐振器和电信号处理元件
公开(公告)号：US07915793B2
公开(公告)日：2011-03-29
申请号：US11670081
申请日：2007-02-01
申请人： Atsushi Isobe , Nobuhiko Shibagaki , Kengo Asai , Hisanori Matsumoto
发明人： Atsushi Isobe , Nobuhiko Shibagaki , Kengo Asai , Hisanori Matsumoto
IPC分类号： H03H9/21 , H01L41/08
CPC分类号： H03H9/21 , H03H2003/026
摘要： A compact resonator has a wide bandwidth and a small variation of the specific vibration frequency. The resonator is a thin film tuning-fork type inflection resonator in which a thin film made of a piezoelectric material is formed on a substrate on which a lower electrode is formed, and an upper electrode is formed on the piezoelectric thin film.
摘要翻译：紧凑型谐振器具有宽带宽和特定振动频率的小变化。谐振器是薄膜音叉式拐点共振器，其中在其上形成有下电极的基板上形成由压电材料制成的薄膜，并且在压电薄膜上形成上电极。

23. 发明申请

US20080024042A1 THIN FILM PIEZOELECTRIC BULK ACOUSTIC WAVE RESONATOR AND RADIO FREQUENCY FILTER USING THE SAME 失效
标题翻译：薄膜压电体积波形谐振器和无线电频率滤波器
公开(公告)号：US20080024042A1
公开(公告)日：2008-01-31
申请号：US11627858
申请日：2007-01-26
申请人： Atsushi Isobe , Kengo Asai , Hisanori Matsumoto , Nobuhiko Shibagaki
发明人： Atsushi Isobe , Kengo Asai , Hisanori Matsumoto , Nobuhiko Shibagaki
IPC分类号： H01L41/047
CPC分类号： H03H9/02228 , H03H3/04 , H03H9/173 , H03H9/175 , H03H9/564 , H03H9/568 , H03H9/605 , H03H2003/0428 , H03H2003/0457 , H03H2003/0471
摘要： An object of the present invention is to provide an inexpensive thin film piezoelectric bulk acoustic wave resonator that allows fine-tuning of a resonant frequency. Another object is to provide an inexpensive filter with dramatically improved frequency characteristics, using thin film piezoelectric bulk acoustic wave resonators that can be formed on one substrate. A thin film piezoelectric bulk acoustic wave resonator of the present invention has a laminated structure including a piezoelectric thin film, and a first metal electrode film and a second metal electrode film between which part of the piezoelectric thin film is sandwiched; the first metal electrode film has a plurality of holes formed on an electrode plane opposite to the second metal electrode film and having a depth equivalent to at least the thickness of the first metal electrode film; and if a combined thickness of top and bottom electrode layers and the piezoelectric thin film is ht, the covering ratio σ of the electrode plane of the first metal electrode film satisfies a condition 0
摘要翻译：本发明的目的是提供一种廉价的薄膜压电体声波谐振器，其允许谐振频率的微调。另一个目的是提供一种具有显着改善的频率特性的便宜的滤波器，使用可以在一个基板上形成的薄膜压电体声波谐振器。本发明的薄膜压电体声波谐振器具有包括压电薄膜和第一金属电极薄膜和第二金属电极薄膜的叠层结构，压电薄膜的一部分夹在其间; 所述第一金属电极膜具有形成在与所述第二金属电极膜相反的电极面上并且具有至少等于所述第一金属电极膜的厚度的深度的多个孔; 并且如果顶部和底部电极层和压电薄膜的组合厚度为ht，则对于每1.28ht间距，第一金属电极膜的电极平面的覆盖比sigma满足条件0 <σ<1。

24. 发明授权

US07221242B2 Bulk acoustic wave resonator and manufacturing method thereof, filter using the same, semiconductor integrated circuit device using the same, and high frequency module using the same 失效
标题翻译：体声波谐振器及其制造方法，使用其的滤波器，使用其的半导体集成电路器件，以及使用其的高频模块
公开(公告)号：US07221242B2
公开(公告)日：2007-05-22
申请号：US11067374
申请日：2005-02-28
申请人： Kengo Asai , Hisanori Matsumoto , Atsushi Isobe , Mitsutaka Hikita
发明人： Kengo Asai , Hisanori Matsumoto , Atsushi Isobe , Mitsutaka Hikita
IPC分类号： H03H9/00 , H01L41/00
CPC分类号： H03H3/02 , H03H9/0542 , H03H9/0571 , H03H9/174 , H03H9/564 , H03H9/706
摘要： A bulk acoustic wave resonator in which the problem of the technology for forming the diaphragm structure is resolved, which is more compact and improved the frequency accuracy, and the manufacturing method thereof, a filter using the same, a semiconductor integrated circuit device using the same, and a high frequency module using the same are provided. The bulk acoustic wave resonator according to the present invention comprises a substrate having a first surface and a second surface opposite to the first surface, and a staked resonator including a first electrode film in contact with the first surface, a piezoelectric film overlaying the first electrode film and a second electrode film overlaying the piezoelectric film. The substrate is provided with an air gap including a first aperture opening at the first surface and a second aperture opening at the second surface at the position corresponding to the staked resonator, respectively and having air gap generally vertical shape to the first surface, and another air gap having a tapered shape in the vicinity of the first surface.
摘要翻译：解决了用于形成隔膜结构的技术的问题的体声波谐振器，其更紧凑并且提高了频率精度，其制造方法，使用该隔膜结构的滤波器，使用该隔膜结构的半导体集成电路器件，并且提供使用该模块的高频模块。根据本发明的体声波谐振器包括具有与第一表面相对的第一表面和第二表面的基板，以及包括与第一表面接触的第一电极膜的支架谐振器，覆盖第一电极的压电膜膜和覆盖压电膜的第二电极膜。衬底设置有气隙，该空气间隙包括在第一表面处的第一孔径开口和位于对应于桩状共振器的位置处的第二表面处的第二孔口开口，并且具有大致垂直于第一表面的气隙，另一个气隙在第一表面附近具有锥形形状。

25. 发明申请

US20060158283A1 Piezoelectric thin film resonators 失效
公开(公告)号：US20060158283A1
公开(公告)日：2006-07-20
申请号：US11333282
申请日：2006-01-18
申请人： Mitsutaka Hikita , Nobuhiko Shibagaki , Atsushi Isobe , Kengo Asai , Hisanori Matsumoto
发明人： Mitsutaka Hikita , Nobuhiko Shibagaki , Atsushi Isobe , Kengo Asai , Hisanori Matsumoto
IPC分类号： H03H9/54
CPC分类号： H03H9/174 , H03H9/02102 , H03H9/173 , H03H9/178
摘要： A piezoelectric thin film resonator is formed on a base substrate such as made of Si in which the resonance frequency is substantially determined by the lateral size not by the thickness of the resonator, whereby a resonator for use in TCXO, etc. is provided by the thin film technique, which enables to reduce the thickness of the film and the size of the resonator and integration with Si-based IC incorporating the resonator in one identical substrate.

26. 发明申请

US20060267710A1 Bulk acoustic wave resonator, bulk acoustic wave filter, RF module including bulk acoustic wave resonator and/or filter, and bulk acoustic wave oscillator 失效
标题翻译：体声波谐振器，体声波滤波器，包括体声波谐振器和/或滤波器的RF模块以及体声波振荡器
公开(公告)号：US20060267710A1
公开(公告)日：2006-11-30
申请号：US11345538
申请日：2006-02-02
申请人： Hisanori Matsumoto , Tomio Iwasaki , Kengo Asai , Nobuhiko Shibagaki
发明人： Hisanori Matsumoto , Tomio Iwasaki , Kengo Asai , Nobuhiko Shibagaki
IPC分类号： H03H9/54
CPC分类号： H03H9/02086 , H03H9/174 , H03H9/175
摘要： A bulk acoustic wave resonator which has excellent elasticity and high electromechanical energy conversion efficiency. A bulk acoustic wave resonator comprises a substrate, a lower electrode formed on the substrate, an interlayer formed on the lower electrode layer, a piezoelectric layer formed on the interlayer, and an upper electrode layer formed on the piezoelectric layer. Moreover, both the first lattice mismatch, which is determined between a short edge of the lattice constituting a closest packed plane of a material consisting of an interlayer and a short edge of the lattice constituting a closest packed plane of a material consisting of a piezoelectric layer, and the second lattice mismatch, which is determined between a long edge of the lattice constituting a closest packed plane of a material consisting of an interlayer and a long edge of the lattice constituting a closest packed plane of a material consisting of the piezoelectric layer, are 7% or less, and a lower electrode layer is a material in which the value of the elastic stiffness C33 is 200 GN/m2 or more.
摘要翻译：具有优异弹性和高机电能量转换效率的体声波谐振器。体声波谐振器包括基板，形成在基板上的下电极，形成在下电极层上的中间层，形成在中间层上的压电层，以及形成在压电层上的上电极层。此外，在构成由中间层构成的材料的最接近的填充平面的晶格的短边缘和构成由压电层构成的材料的最接近的填充平面的晶格的短边缘之间确定的第一晶格失配以及在构成由中间层构成的材料的最接近的填充平面的格子的长边和构成由压电体构成的材料的最接近的填充面的格子的长边缘之间确定的第二晶格失配，为7％以下，下部电极层为弹性刚度C333的值为200Ng / m 2以上的材料。

27. 发明授权

US07586390B2 Bulk acoustic wave resonator, bulk acoustic wave filter, RF module including bulk acoustic wave resonator and/or filter, and bulk acoustic wave oscillator 失效
标题翻译：体声波谐振器，体声波滤波器，包括体声波谐振器和/或滤波器的RF模块以及体声波振荡器
公开(公告)号：US07586390B2
公开(公告)日：2009-09-08
申请号：US11345538
申请日：2006-02-02
申请人： Hisanori Matsumoto , Tomio Iwasaki , Kengo Asai , Nobuhiko Shibagaki
发明人： Hisanori Matsumoto , Tomio Iwasaki , Kengo Asai , Nobuhiko Shibagaki
IPC分类号： H03H9/15 , H03H9/54 , H03H9/13
CPC分类号： H03H9/02086 , H03H9/174 , H03H9/175
摘要： A bulk acoustic wave resonator which has excellent elasticity and high electromechanical energy conversion efficiency. A bulk acoustic wave resonator comprises a substrate, a lower electrode formed on the substrate, an interlayer formed on the lower electrode layer, a piezoelectric layer formed on the interlayer, and an upper electrode layer formed on the piezoelectric layer. Moreover, both the first lattice mismatch, which is determined between a short edge of the lattice constituting a closest packed plane of a material consisting of an interlayer and a short edge of the lattice constituting a closest packed plane of a material consisting of a piezoelectric layer, and the second lattice mismatch, which is determined between a long edge of the lattice constituting a closest packed plane of a material consisting of an interlayer and a long edge of the lattice constituting a closest packed plane of a material consisting of the piezoelectric layer, are 7% or less, and a lower electrode layer is a material in which the value of the elastic stiffness C33 is 300 GN/m2 or more.
摘要翻译：具有优异弹性和高机电能量转换效率的体声波谐振器。体声波谐振器包括基板，形成在基板上的下电极，形成在下电极层上的中间层，形成在中间层上的压电层，以及形成在压电层上的上电极层。此外，在构成由中间层构成的材料的最接近的填充平面的晶格的短边缘和构成由压电层构成的材料的最接近的填充平面的晶格的短边缘之间确定的第一晶格失配以及在构成由中间层构成的材料的最接近的填充平面的格子的长边和构成由压电体构成的材料的最接近的填充面的格子的长边缘之间确定的第二晶格失配，为7％以下，下部电极层为弹性刚度C33的值为300Ng / m 2以上的材料。

28. 外观设计

USD668639S1 Antenna for wireless communication 有权
标题翻译：无线通信天线
公开(公告)号：USD668639S1
公开(公告)日：2012-10-09
申请号：US29409684
申请日：2011-12-28
申请人： Hisanori Matsumoto , Tatsushi Morokuma , Ken Sakamura
设计人： Hisanori Matsumoto , Tatsushi Morokuma , Ken Sakamura

29. 外观设计

USD668638S1 Antenna for wireless communication 有权
公开(公告)号：USD668638S1
公开(公告)日：2012-10-09
申请号：US29409683
申请日：2011-12-28
申请人： Hisanori Matsumoto , Tatsushi Morokuma , Ken Sakamura
设计人： Hisanori Matsumoto , Tatsushi Morokuma , Ken Sakamura

30. 外观设计

USD668640S1 Antenna for wireless communication 有权
公开(公告)号：USD668640S1
公开(公告)日：2012-10-09
申请号：US29409685
申请日：2011-12-28
申请人： Hisanori Matsumoto , Tatsushi Morokuma , Ken Sakamura
设计人： Hisanori Matsumoto , Tatsushi Morokuma , Ken Sakamura

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