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21. 发明申请

US20070239383A1 Refining a virtual profile library 有权
标题翻译：精简虚拟简档库
公开(公告)号：US20070239383A1
公开(公告)日：2007-10-11
申请号：US11394860
申请日：2006-03-31
申请人： Merritt Funk , Daniel Prager
发明人： Merritt Funk , Daniel Prager
IPC分类号： G06F19/00
CPC分类号： G01N21/4788
摘要： A method of refining a virtual profile library includes obtaining a reference signal measured off a reference structure on a semiconductor wafer with a metrology device. A best match is selected of the reference signal in a virtual profile data space. The virtual profile data space has data points with specified accuracy values. The data points represent virtual profile parameters and associated virtual profile signals. The virtual profile parameters characterize the profile of an integrated circuit structure. The best match being a data point of the profile data space with a signal closest to the reference signal. Refined virtual profile parameters are determined corresponding to the reference signal based on the virtual profile parameters of the selected virtual profile signal using a refinement procedure.
摘要翻译：精细虚拟简档库的方法包括：使用测量装置获得在半导体晶片上的参考结构测量的参考信号。在虚拟简档数据空间中选择参考信号的最佳匹配。虚拟配置文件数据空间具有指定精度值的数据点。数据点表示虚拟轮廓参数和相关联的虚拟轮廓信号。虚拟轮廓参数表征集成电路结构的轮廓。最佳匹配是具有最接近参考信号的信号的简档数据空间的数据点。使用细化过程，基于所选虚拟简档信号的虚拟简档参数，对应于参考信号来确定精细虚拟简档参数。

22. 发明申请

US20070233426A1 Using a virtual profile library 失效
标题翻译：使用虚拟配置文件库
公开(公告)号：US20070233426A1
公开(公告)日：2007-10-04
申请号：US11396112
申请日：2006-03-31
申请人： Merritt Funk , Daniel Prager
发明人： Merritt Funk , Daniel Prager
IPC分类号： G06F19/00 , G06F17/40
CPC分类号： G01R31/307 , G01R31/2846
摘要： A method of using a virtual profile library to determine the profile of an integrated circuit structure includes measuring a signal off the structure with a metrology device. The measurement generates a measured signal. The measured signal is compared to a plurality of signals in at least one library. The comparison is stopped if a matching criteria is met. A subset of a virtual profile data space associated with the virtual profile library is determined when a matching criteria is not met. The subset is determined using profile data space associated with the at least one library. A virtual profile signal of the subset of the virtual profile data space is selected. A virtual profile shape and/or virtual profile parameters are determined based on the virtual profile signal. A difference is calculated between the measured signal and the virtual profile signal. The difference is compared to a virtual profile library creation criteria. If the virtual profile library creation criteria is met, then the structure is identified using virtual profile data, which includes the virtual profile shape and/or the virtual profile parameters, associated with the virtual profile signal. Or, if the virtual profile library creation criteria is not met, then a corrective action is applied.
摘要翻译：使用虚拟简档库来确定集成电路结构的简档的方法包括使用测量装置测量离开结构的信号。测量产生测量信号。将测量的信号与至少一个库中的多个信号进行比较。如果符合匹配标准，则停止比较。当匹配标准不满足时，确定与虚拟简档库相关联的虚拟简档数据空间的子集。使用与至少一个库相关联的简档数据空间确定子集。选择虚拟简档数据空间的子集的虚拟简档信号。基于虚拟简档信号来确定虚拟简档形状和/或虚拟简档参数。在测量信号和虚拟轮廓信号之间计算差值。将差异与虚拟简档库创建标准进行比较。如果满足虚拟简档库创建标准，则使用与虚拟简档信号相关联的虚拟简档数据（包括虚拟简档形状和/或虚拟简档参数）来识别该结构。或者，如果虚拟配置文件库创建条件不满足，则应用纠正措施。

23. 发明申请

US20060007453A1 FEATURE DIMENSION DEVIATION CORRECTION SYSTEM, METHOD AND PROGRAM PRODUCT 有权
标题翻译：特征尺寸偏差校正系统，方法和程序产品
公开(公告)号：US20060007453A1
公开(公告)日：2006-01-12
申请号：US10710447
申请日：2004-07-12
申请人： David Horak , Wesley Natzle , Merritt Funk , Kevin Lally , Daniel Prager
发明人： David Horak , Wesley Natzle , Merritt Funk , Kevin Lally , Daniel Prager
IPC分类号： G06F19/00 , G01B11/14
CPC分类号： H01L22/20
摘要： A system, method and program product for correcting a deviation of a dimension of a feature from a target in a semiconductor process, are disclosed. The invention determines an origin of a deviation in a feature dimension from a target dimension regardless of whether it is based on processing or metrology. Adjustments for wafer processing variation of previous process tools can be fed forward, and adjustments for the process and/or integrated metrology tools may be fed back automatically during the processing of semiconductor wafers. The invention implements process reference wafers to determine the origin in one mode, and measurement reference wafers to determine the origin of deviations in another mode.
摘要翻译：公开了一种用于在半导体处理中校正特征尺寸与目标的偏差的系统，方法和程序产品。本发明确定特征维度与目标维度的偏差的起源，而不管其是基于处理还是计量学。可以向前馈送先前工艺工具的晶片处理变化的调整，并且可以在半导体晶片的处理期间自动地反馈过程和/或集成度量工具的调整。本发明实施过程参考晶片以确定一种模式中的原点，以及测量参考晶片以确定另一种模式中偏差的起点。

24. 发明授权

US07209798B2 Iso/nested cascading trim control with model feedback updates 有权
标题翻译： Iso /嵌套级联调整控制与模型反馈更新
公开(公告)号：US07209798B2
公开(公告)日：2007-04-24
申请号：US10944463
申请日：2004-09-20
申请人： Asao Yamashita , Merritt Lane Funk , Daniel Prager
发明人： Asao Yamashita , Merritt Lane Funk , Daniel Prager
IPC分类号： G06F19/00
CPC分类号： H01L22/20 , H01L21/32139 , H01L2924/0002 , H01L2924/00
摘要： This method includes a method for etch processing that allows the bias between isolated and nested structures/features to be adjusted, correcting for a process wherein the isolated structures/features need to be smaller than the nested structures/features and wherein the nested structures/features need to be reduced relative to the isolated structures/features, while allowing for the critical control of trimming.
摘要翻译：该方法包括用于蚀刻处理的方法，其允许调整隔离结构/嵌套结构/特征之间的偏置，校正其中隔离结构/特征需要小于嵌套结构/特征的过程，并且其中嵌套结构/特征需要相对于孤立的结构/特征而减少，同时允许对修剪的关键控制。

25. 发明授权

US07126700B2 Parametric optimization of optical metrology model 失效
标题翻译：光学计量学模型的参数优化
公开(公告)号：US07126700B2
公开(公告)日：2006-10-24
申请号：US10735212
申请日：2003-12-12
申请人： Junwei Bao , Vi Vuong , Manuel Madriaga , Daniel Prager
发明人： Junwei Bao , Vi Vuong , Manuel Madriaga , Daniel Prager
IPC分类号： G01B11/02 , G01B11/24
CPC分类号： G01B11/303 , G01B11/24 , G03F7/70625
摘要： The profile of an integrated circuit structure is determined by obtaining a measured metrology signal and a first simulated metrology signal, which has an associated profile model of the structure defined by a set of profile parameters. When the two signals match within a first termination criterion, at least one profile parameter is selected from the set of profile parameters. A value for the selected profile parameter is determined. A second simulated metrology signal having an associated profile model of the structure defined by a set of profile parameters with at least one profile parameter equal or close to the determined value for the selected profile parameter is obtained. When the measured and the second simulated metrology signals match within a second termination criterion, values for one or more remaining profile parameters are determined from the set of profile parameters associated with the second simulated metrology signal.
摘要翻译：通过获得测量的测量信号和第一模拟测量信号来确定集成电路结构的轮廓，该测量信号具有由一组轮廓参数定义的结构的相关联的轮廓模型。当两个信号在第一终止标准中匹配时，从简档参数集中选择至少一个简档参数。确定所选配置文件参数的值。获得具有由一组轮廓参数定义的结构的关联轮廓模型的第二模拟计量信号，其中至少一个轮廓参数等于或接近所选轮廓参数的确定值。当所测量的和第二模拟测量信号在第二终止标准内匹配时，从与第二模拟测量信号相关联的轮廓参数的集合确定一个或多个剩余轮廓参数的值。

26. 发明授权

US07395132B2 Optical metrology model optimization for process control 有权
标题翻译：用于过程控制的光学计量模型优化
公开(公告)号：US07395132B2
公开(公告)日：2008-07-01
申请号：US11804998
申请日：2007-05-21
申请人： Daniel Prager , Jason Ferns , Lawrence Lane , Dan Engelhard
发明人： Daniel Prager , Jason Ferns , Lawrence Lane , Dan Engelhard
IPC分类号： G06F19/00
CPC分类号： G03F7/70616 , G01B11/24 , G03F7/70491 , G03F7/705 , G03F7/70625
摘要： To evaluate the adequacy of a profile model, an initial profile model is selected. The profile model includes profile model parameters to be measured in implementing types of process control to be used in controlling a fabrication process. A measurement of profile model parameters is obtained using a first metrology tool and the profile model. A measurement of the profile model parameters is obtained using a second metrology tool and the profile model. Statistical metric criteria are calculated based on the measurements of the profile model parameters obtained using the first and second metrology tools. When the calculated statistical metric criteria are not within matching requirements, the profile model is revised. When the calculated statistical metric criteria are within matching requirements, the profile model or the revised profile model is stored.
摘要翻译：为了评估轮廓模型的适合性，选择初始轮廓模型。轮廓模型包括在实施用于控制制造过程的过程控制的类型中要测量的轮廓模型参数。使用第一个计量工具和轮廓模型获得轮廓模型参数的测量。使用第二计量工具和轮廓模型获得轮廓模型参数的测量。基于使用第一和第二计量工具获得的轮廓模型参数的测量来计算统计度量标准。当计算的统计度量标准不在匹配要求中时，修改轮廓模型。当计算的统计度量标准在匹配要求内时，将存储配置文件模型或修订的配置文件模型。

27. 发明授权

US07502660B2 Feature dimension deviation correction system, method and program product 失效
标题翻译：特征尺寸偏差校正系统，方法和程序产品
公开(公告)号：US07502660B2
公开(公告)日：2009-03-10
申请号：US11865739
申请日：2007-10-02
申请人： David V. Horak , Wesley C. Natzle , Merritt L. Funk , Kevin J. Lally , Daniel Prager
发明人： David V. Horak , Wesley C. Natzle , Merritt L. Funk , Kevin J. Lally , Daniel Prager
IPC分类号： G06F19/00
CPC分类号： H01L22/20
摘要： A system, method and program product for correcting a deviation of a dimension of a feature from a target in a semiconductor process, are disclosed. The invention determines an origin of a deviation in a feature dimension from a target dimension regardless of whether it is based on processing or metrology. Adjustments for wafer processing variation of previous process tools can be fed forward, and adjustments for the process and/or integrated metrology tools may be fed back automatically during the processing of semiconductor wafers. The invention implements process reference wafers to determine the origin in one mode, and measurement reference wafers to determine the origin of deviations in another mode.
摘要翻译：公开了一种用于在半导体处理中校正特征尺寸与目标的偏差的系统，方法和程序产品。本发明确定特征维度与目标维度的偏差的起源，而不管其是基于处理还是计量学。可以向前馈送先前工艺工具的晶片处理变化的调整，并且可以在半导体晶片的处理期间自动地反馈过程和/或集成度量工具的调整。本发明实施过程参考晶片以确定一种模式中的原点，以及测量参考晶片以确定另一种模式中偏差的起点。

28. 发明授权

US07289864B2 Feature dimension deviation correction system, method and program product 有权
标题翻译：特征尺寸偏差校正系统，方法和程序产品
公开(公告)号：US07289864B2
公开(公告)日：2007-10-30
申请号：US10710447
申请日：2004-07-12
申请人： David V. Horak , Wesley C. Natzle , Merritt L. Funk , Kevin J. Lally , Daniel Prager
发明人： David V. Horak , Wesley C. Natzle , Merritt L. Funk , Kevin J. Lally , Daniel Prager
IPC分类号： G06F19/00
CPC分类号： H01L22/20
摘要： A system, method and program product for correcting a deviation of a dimension of a feature from a target in a semiconductor process, are disclosed. The invention determines an origin of a deviation in a feature dimension from a target dimension regardless of whether it is based on processing or metrology. Adjustments for wafer processing variation of previous process tools can be fed forward, and adjustments for the process and/or integrated metrology tools may be fed back automatically during the processing of semiconductor wafers. The invention implements process reference wafers to determine the origin in one mode, and measurement reference wafers to determine the origin of deviations in another mode.
摘要翻译：公开了一种用于在半导体处理中校正特征尺寸与目标的偏差的系统，方法和程序产品。本发明确定特征维度与目标维度的偏差的起源，而不管其是基于处理还是计量学。可以向前馈送先前工艺工具的晶片处理变化的调整，并且可以在半导体晶片的处理期间自动地反馈过程和/或集成度量工具的调整。本发明实施过程参考晶片以确定一种模式中的原点，以及测量参考晶片以确定另一种模式中偏差的起点。

29. 发明申请

US20050128489A1 Parametric optimization of optical metrology model 失效
标题翻译：光学计量学模型的参数优化
公开(公告)号：US20050128489A1
公开(公告)日：2005-06-16
申请号：US10735212
申请日：2003-12-12
申请人： Junwei Bao , Vi Vuong , Manuel Madriaga , Daniel Prager
发明人： Junwei Bao , Vi Vuong , Manuel Madriaga , Daniel Prager
IPC分类号： G01B11/24 , G01B11/30 , G01B15/04 , G01B21/20 , G01Q80/00 , H01L21/66
CPC分类号： G01B11/303 , G01B11/24 , G03F7/70625
摘要： The profile of an integrated circuit structure is determined by obtaining a measured metrology signal and a first simulated metrology signal, which has an associated profile model of the structure defined by a set of profile parameters. When the two signals match within a first termination criterion, at least one profile parameter is selected from the set of profile parameters. A value for the selected profile parameter is determined. A second simulated metrology signal having an associated profile model of the structure defined by a set of profile parameters with at least one profile parameter equal or close to the determined value for the selected profile parameter is obtained. When the measured and the second simulated metrology signals match within a second termination criterion, values for one or more remaining profile parameters are determined from the set of profile parameters associated with the second simulated metrology signal.
摘要翻译：通过获得测量的测量信号和第一模拟测量信号来确定集成电路结构的轮廓，该测量信号具有由一组轮廓参数定义的结构的相关联的轮廓模型。当两个信号在第一终止标准中匹配时，从简档参数集中选择至少一个简档参数。确定所选配置文件参数的值。获得具有由一组轮廓参数定义的结构的关联轮廓模型的第二模拟计量信号，其中至少一个轮廓参数等于或接近所选轮廓参数的确定值。当所测量的和第二模拟测量信号在第二终止标准内匹配时，从与第二模拟测量信号相关联的轮廓参数的集合确定一个或多个剩余轮廓参数的值。

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