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    • 22. 发明授权
    • Sensing circuit
    • 感应电路
    • US07170790B2
    • 2007-01-30
    • US11061104
    • 2005-02-18
    • Nicolas DemangeAntonino ConteSalvatore PrecisoAlfredo Signorello
    • Nicolas DemangeAntonino ConteSalvatore PrecisoAlfredo Signorello
    • G11C16/06
    • G11C7/062G11C7/14G11C16/28
    • A sensing circuit (120) for sensing currents, including: a measure circuit branch (132i), having a measure node for receiving an input current (Ic) to be sensed, for converting the input current into a corresponding input voltage (V−); at least one comparison circuit branch (132o), having a comparison node for receiving a comparison current (Igs), for converting the comparison current into a corresponding comparison voltage (V+); and at least one voltage comparator (140) for comparing the input and comparison voltages, and a comparison current generating circuit (N3s, 135; N3s, 135′; N3s, 135″) for generating the comparison current based on a reference current (Ir). The comparison current generating circuit includes at least one voltage generator (135; 135′; 135″). A memory device using the sensing circuit and a method are also provided.
    • 一种用于感测电流的感测电路(120),包括:测量电路分支(132i),具有用于接收待感测的输入电流(Ic)的测量节点,用于将输入电流转换成对应的输入电压(V- ); 至少一个比较电路分支(132o),具有用于接收比较电流(Igs)的比较节点,用于将比较电流转换成对应的比较电压(V +); 以及用于比较输入和比较电压的至少一个电压比较器(140)和用于产生比较电流的比较电流产生电路(N 3 s,135; N 3 s,135'; N 3 s,135“) 基于参考电流(Ir)。 比较电流产生电路包括至少一个电压发生器(135; 135'; 135“)。 还提供了使用感测电路的存储器件和方法。
    • 24. 发明授权
    • Method for biasing an EEPROM non-volatile memory array and corresponding EEPROM non-volatile memory device
    • 用于偏置EEPROM非易失性存储器阵列和相应的EEPROM非易失性存储器件的方法
    • US08376237B2
    • 2013-02-19
    • US12885028
    • 2010-09-17
    • Gianbattista Lo GiudiceEnrico CastaldoAntonino Conte
    • Gianbattista Lo GiudiceEnrico CastaldoAntonino Conte
    • G06K19/06
    • G11C16/0433G11C16/10G11C16/16
    • Described herein is a method for biasing an EEPROM array formed by memory cells arranged in rows and columns, each operatively coupled to a first switch and to a second switch and having a first current-conduction terminal selectively connectable to a bitline through the first switch and a control terminal selectively connectable to a gate-control line through the second switch, wherein associated to each row are a first wordline and a second wordline, connected to the control terminals of the first switches and, respectively, of the second switches operatively coupled to the memory cells of the same row. The method envisages selecting at least one memory cell for a given memory operation, biasing the first wordline and the second wordline of the row associated thereto, and in particular biasing the first and second wordlines with voltages different from one another and having values that are higher than an internal supply voltage and are a function of the given memory operation.
    • 这里描述了一种用于偏置由排列成行和列的存储器单元形成的EEPROM阵列的方法,每个可操作地耦合到第一开关和第二开关,并且具有通过第一开关选择性地连接到位线的第一导通端子, 选择性地可连接到通过第二开关的栅极控制线的控制终端,其中与每一行相关联的是分别连接到第一开关的控制端的第一字线和第二字线,以及分别操作地耦合到 同一行的存储单元。 该方法设想为给定的存储器操作选择至少一个存储器单元,偏置与其相关联的行的第一字线和第二字线,并且特别是以彼此不同的电压偏置第一和第二字线并且具有更高的值 而不是内部电源电压,并且是给定存储器操作的函数。
    • 28. 发明申请
    • CONTROL INTEGRATED CIRCUIT FOR A CHARGE PUMP
    • 充电泵控制集成电路
    • US20080007321A1
    • 2008-01-10
    • US11771157
    • 2007-06-29
    • Enrico CASTALDOAntonino ConteGianbattista Lo Giudice
    • Enrico CASTALDOAntonino ConteGianbattista Lo Giudice
    • G05F1/10
    • G11C5/145G11C16/12
    • An integrated control circuit for a charge pump includes a first device for regulating the output voltage of the charge pump and a second device for increasing the output voltage from the charge pump with a set ramp. The integrated circuit includes means for activating said first device and providing it with a first value of a supply signal in a first period of time and for activating the second device and providing it with a second value of the supply signal that is greater than the first value in a second period of time after the first in such a way that the output voltage of the charge pump ascends a ramp from a first value to a second value that is greater than the first value, the second value being fixed by reactivation of the first device.
    • 用于电荷泵的集成控制电路包括用于调节电荷泵的输出电压的第一装置和用于通过设定斜坡增加来自电荷泵的输出电压的第二装置。 集成电路包括用于激活所述第一设备并且在第一时间段内向其提供电源信号的第一值并且用于激活第二设备并且向其提供大于第一设备的第二电源信号的第二值的装置 在第一次之后的第二时间段内的值以使得电荷泵的输出电压从第一值升高到大于第一值的第二值的斜坡,第二值通过重新激活固定 第一个装置