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21. 发明申请

US20060051931A1 Method for fabricating a trench isolation structure having a high aspect ratio 有权
标题翻译：一种制造具有高纵横比的沟槽隔离结构的方法
公开(公告)号：US20060051931A1
公开(公告)日：2006-03-09
申请号：US11216527
申请日：2005-08-31
申请人： Uwe Wellhausen
发明人： Uwe Wellhausen
IPC分类号： H01L21/76
CPC分类号： H01L21/76205 , H01L27/1087
摘要： A method for fabricating a trench isolation structure wherein a trench is formed in a silicon body and an oxide layer is formed in the trench. The silicon body is exposed at the bottom of the trench by means of an etching step, and silicon oxide is selectively grown on the silicon exposed at the bottom of the trench, the silicon oxide being grown from the bottom of the trench toward an upper edge of the trench.
摘要翻译：一种用于制造沟槽隔离结构的方法，其中在硅体中形成沟槽，并且在沟槽中形成氧化物层。硅体通过蚀刻步骤在沟槽的底部暴露，并且在暴露在沟槽底部的硅上选择性地生长氧化硅，氧化硅从沟槽的底部朝向上边缘生长的沟槽。

22. 发明授权

US06940111B2 Radiation protection in integrated circuits 失效
标题翻译：集成电路中的辐射防护
公开(公告)号：US06940111B2
公开(公告)日：2005-09-06
申请号：US10065922
申请日：2002-11-29
申请人： Rainer Bruchhaus , Uwe Wellhausen , Nicolas Nagel , Stefan Gernhardt
发明人： Rainer Bruchhaus , Uwe Wellhausen , Nicolas Nagel , Stefan Gernhardt
IPC分类号： G06F1/04 , H01L21/02 , H01L23/00 , H01L23/552 , H01L27/115 , H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119
CPC分类号： H01L23/552 , H01L27/11502 , H01L28/57 , H01L2924/0002 , H01L2924/00
摘要： Reduced radiation damage to an IC feature is disclosed. At least a portion of the feature which is sensitive to radiation is covered by a radiation protection layer. The radiation protection layer protects the feature from being damaged to radiation during, for example, processing of the IC. In one embodiment, the radiation protection layer comprises a noble metal, oxides, alloys, or compounds thereof.
摘要翻译：公开了降低对IC特征的辐射损伤。对辐射敏感的特征的至少一部分被辐射防护层覆盖。辐射防护层在例如IC的处理期间保护特征不被辐射损坏。在一个实施例中，辐射防护层包括贵金属，氧化物，合金或其化合物。

23. 发明申请

US20050037521A1 Methods and apparatus for processing semiconductor devices by gas annealing 审中-公开
标题翻译：通过气体退火处理半导体器件的方法和装置
公开(公告)号：US20050037521A1
公开(公告)日：2005-02-17
申请号：US10641786
申请日：2003-08-15
申请人： Uwe Wellhausen
发明人： Uwe Wellhausen
IPC分类号： H01L21/00 , H01L21/30 , H01L21/324 , H01L21/8246 , H01L27/115 , H01L21/477
CPC分类号： H01L21/324 , H01L21/3003 , H01L21/67109 , H01L27/11502 , H01L27/11507
摘要： An annealing apparatus comprises a first chamber and a second chamber. A wafer can be located between the chambers, with a first of its surfaces in the first chamber and a second of its surfaces in the second chamber. Different gases are fed to the two chambers, so that, during an annealing step, the components proximate the two chambers are exposed to different gaseous atmospheres. Gas can penetrate from the top and bottom chambers into the wafer, but interdiffusion is blocked by a diffusion blocker layer (e.g. Si3N4) within the wafer (e.g. separating CMOS devices from ferrocapacitor devices). If one of the gases is active in a thermal treatment (e.g. a hydrogen-rich gas for performing a CMOS device fabrication step), then the other gas may be inert, so that certain regions of the wafer are not subjected to the treatment step.
摘要翻译：退火设备包括第一室和第二室。晶片可以位于室之间，其第一腔室中的第一表面和第二腔室中的第二表面的第二表面。不同的气体被供给到两个室，使得在退火步骤期间，靠近两个室的部件暴露于不同的气体气氛。气体可以从顶部和底部腔室穿透进入晶片，但是相互扩散被晶片内的扩散阻挡层（例如Si 3 N 4）阻挡（例如，从CMOS电路器件分离CMOS器件）。如果其中一种气体在热处理（例如用于进行CMOS器件制造步骤的富氢气体）中是有活性的，则其它气体可以是惰性的，使得晶片的某些区域不经受处理步骤。

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