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21. 发明申请

US20080173237A1 Plasma Immersion Chamber 审中-公开
标题翻译：等离子体浸入室
公开(公告)号：US20080173237A1
公开(公告)日：2008-07-24
申请号：US12016810
申请日：2008-01-18
申请人： Kenneth S. Collins , Andrew N. Nguyen , Kartik Ramaswamy , Hiroji Hanawa , Douglas A. Buchberger , Daniel J. Hoffman , Amir Al-Bayati
发明人： Kenneth S. Collins , Andrew N. Nguyen , Kartik Ramaswamy , Hiroji Hanawa , Douglas A. Buchberger , Daniel J. Hoffman , Amir Al-Bayati
IPC分类号： C23C16/453
CPC分类号： H01J37/32458 , H01J37/32412 , H01J37/32477
摘要： Embodiments described herein generally provide a toroidal plasma source, a plasma channeling device, a showerhead, and a substrate support assembly for use in a plasma chamber. The toroidal plasma source, plasma channeling device, showerhead, and substrate support assembly are adapted to improve the usable lifetime of the plasma chamber, as well as reduce assembly cost, increase the plasma chamber reliability, and improve device yield on the processed substrates.
摘要翻译：本文描述的实施例通常提供环形等离子体源，等离子体引导装置，喷头和用于等离子体室的基板支撑组件。环形等离子体源，等离子体引导装置，喷头和基板支撑组件适于改善等离子体室的使用寿命，并且降低组装成本，增加等离子体室的可靠性，并提高处理的基板上的装置产量。

22. 发明申请

US20080110860A1 METHOD OF PLASMA CONFINEMENT FOR ENHANCING MAGNETIC CONTROL OF PLASMA RADIAL DISTRIBUTION 有权
标题翻译：用于增强等离子体辐射分布的磁控制的等离子体限制方法
公开(公告)号：US20080110860A1
公开(公告)日：2008-05-15
申请号：US11751592
申请日：2007-05-21
申请人： Matthew L. Miller , Daniel J. Hoffman , Steven C. Shannon , Michael Kutney , James Carducci , Andrew Nguyen
发明人： Matthew L. Miller , Daniel J. Hoffman , Steven C. Shannon , Michael Kutney , James Carducci , Andrew Nguyen
IPC分类号： H01L21/302
CPC分类号： H01J37/3266 , H01J37/32623 , H01J37/32633 , H01J37/32697
摘要： A method for processing a workpiece in a plasma reactor. The method comprises constraining plasma in the chamber away from the floor of the pumping annulus, providing an annular baffle while compensating for asymmetry of gas flow attributable to the pumping port, and providing a gas flow equalizer below the baffle having an eccentrically shaped opening. The method further includes modifying the radial distribution of plasma ion density and providing a magnetic plasma steering field having an edge high plasma ion density distribution tendency. The method further comprises locating the baffle at a sufficient distance below the workpiece to provide an edge low plasma ion density distribution tendency that compensates the edge high plasma ion density distribution tendency of the magnetic plasma steering field.
摘要翻译：一种在等离子体反应器中处理工件的方法。该方法包括将腔室中的等离子体约束在泵送环空的地板之外，提供环形挡板，同时补偿归因于泵送端口的气流的不对称性，以及在挡板下方提供具有偏心形状的开口的气流均衡器。该方法还包括修改等离子体离子密度的径向分布并提供具有边缘高等离子体离子密度分布倾向的磁等离子体转向场。该方法还包括将挡板定位在工件下方足够的距离处，以提供补偿磁等离子体转向场的边缘高等离子体离子密度分布趋势的边缘低等离子体离子密度分布趋势。

23. 发明申请

US20070289359A1 METHOD FOR DETERMINING PLASMA CHARACTERISTICS 失效
标题翻译：用于确定等离子体特性的方法
公开(公告)号：US20070289359A1
公开(公告)日：2007-12-20
申请号：US11758299
申请日：2007-06-05
申请人： Steven C. Shannon , Daniel J. Hoffman , Jeremiah T.P. Pender , Tarreg Mawari
发明人： Steven C. Shannon , Daniel J. Hoffman , Jeremiah T.P. Pender , Tarreg Mawari
IPC分类号： G01N27/00
CPC分类号： H05H1/0081 , H01J37/32174 , H01J37/32935 , H01L21/67005
摘要： Methods for determining characteristics of a plasma are provided. In one embodiment, a method for determining characteristics of a plasma includes obtaining metrics of current and voltage information for first and second waveforms coupled to a plasma at different frequencies, determining at least one characteristic of the plasma using the metrics obtained from each different frequency waveform. In another embodiment, the method includes providing a plasma impedance model of a plasma as a function of frequency, and determining at least one characteristic of a plasma using model. In yet another embodiment, the method includes providing a plasma impedance model of a plasma as a function of frequency, measuring current and voltage for waveforms coupled to the plasma and having at least two different frequencies, and determining ion mass of a plasma from model and the measured current and voltage of the waveforms.
摘要翻译：提供了确定等离子体特性的方法。在一个实施例中，用于确定等离子体特性的方法包括获得与不同频率耦合到等离子体的第一和第二波形的电流和电压信息的度量，使用从每个不同频率波形获得的度量来确定等离子体的至少一个特性。在另一个实施例中，该方法包括提供作为频率的函数的等离子体的等离子体阻抗模型，以及使用模型确定等离子体的至少一个特性。在另一个实施例中，该方法包括提供作为频率的函数的等离子体的等离子体阻抗模型，测量耦合到等离子体并具有至少两个不同频率的波形的电流和电压，以及从模型确定等离子体的离子质量，测量的电流和电压的波形。

24. 发明授权

US5866272A Titanium-polymer hybrid laminates 失效
公开(公告)号：US5866272A
公开(公告)日：1999-02-02
申请号：US585304
申请日：1996-01-11
申请人： Willard N. Westre , Heather C. Allen-Lilly , Donald J. Ayers , Samuel E. Cregger , David W. Evans , Donald L. Grande , Daniel J. Hoffman , Mark E. Rogalski , Robert J. Rothschilds
发明人： Willard N. Westre , Heather C. Allen-Lilly , Donald J. Ayers , Samuel E. Cregger , David W. Evans , Donald L. Grande , Daniel J. Hoffman , Mark E. Rogalski , Robert J. Rothschilds
IPC分类号： B32B15/08 , B64C1/00 , B64C1/12 , B64C30/00 , B32B3/12
CPC分类号： B64C30/00 , B32B15/08 , B32B15/14 , B32B3/12 , B32B37/146 , B32B5/02 , B32B5/12 , B32B7/005 , B64C1/12 , B64C3/26 , B32B2250/42 , B32B2255/06 , B32B2260/023 , B32B2260/046 , B32B2262/10 , B32B2262/106 , B32B2305/076 , B32B2307/306 , B32B2307/54 , B32B2307/552 , B32B2307/714 , B32B2311/18 , B32B2605/18 , B64C2001/0072 , Y02T50/433 , Y10T428/1234 , Y10T428/12431 , Y10T428/12444 , Y10T428/12569 , Y10T428/12806 , Y10T428/24165 , Y10T428/249942 , Y10T428/26 , Y10T428/31678
摘要： The invention provides a hybrid laminate and skin panels of hybrid laminate structure that are suitable for a supersonic civilian aircraft. The hybrid laminates include layups of layers of titanium alloy foil and composite plies, that are optimally oriented to counteract forces encountered in use, that are bonded to a central core structure, such as titanium alloy honeycomb. The reinforcing fibers of the composite plies are selected from carbon and boron, and the fibers are continuous and parallel oriented within each ply. However, some plies may be oriented at angles to other plies. Nevertheless, in a preferred embodiment of the invention, a substantial majority of, or all of, the fibers of the hybrid laminates are oriented in a common direction. The outer surfaces of the laminates include a layer of titanium foil to protect the underlying composite-containing structure from the environment, and attack by solvents, and the like.

25. 发明授权

US09856558B2 Physical vapor deposition method with a source of isotropic ion velocity distribution at the wafer surface 有权
公开(公告)号：US09856558B2
公开(公告)日：2018-01-02
申请号：US12077067
申请日：2008-03-14
申请人： Daniel J. Hoffman , Karl M. Brown , Ying Rui , John Pipitone
发明人： Daniel J. Hoffman , Karl M. Brown , Ying Rui , John Pipitone
IPC分类号： C23C14/34 , C23C14/35 , H01J37/32 , H01J37/34 , C23C14/50 , C23C14/54
CPC分类号： C23C14/35 , C23C14/3471 , C23C14/50 , C23C14/542 , H01J37/32091 , H01J37/32174 , H01J37/32577 , H01J37/3266 , H01J37/32706 , H01J37/32715 , H01J37/34 , H01J37/3444
摘要： In a plasma enhanced physical vapor deposition of a material onto workpiece, a metal target faces the workpiece across a target-to-workpiece gap less than a diameter of the workpiece. A carrier gas is introduced into the chamber and gas pressure in the chamber is maintained above a threshold pressure at which mean free path is less than 5% of the gap. RF plasma source power from a VHF generator is applied to the target to generate a capacitively coupled plasma at the target, the VHF generator having a frequency exceeding 30 MHz. The plasma is extended across the gap to the workpiece by providing through the workpiece a first VHF ground return path at the frequency of the VHF generator.

26. 发明授权

US09593411B2 Physical vapor deposition chamber with capacitive tuning at wafer support 有权
标题翻译：物理气相沉积室，在晶片支持下进行电容调谐
公开(公告)号：US09593411B2
公开(公告)日：2017-03-14
申请号：US13614704
申请日：2012-09-13
申请人： Daniel J. Hoffman , Karl M. Brown , Ying Rui , John Pipitone
发明人： Daniel J. Hoffman , Karl M. Brown , Ying Rui , John Pipitone
IPC分类号： C23C14/34 , C23C14/35 , H01J37/32 , H01J37/34 , C23C14/50
CPC分类号： C23C14/35 , C23C14/3471 , C23C14/50 , C23C14/542 , H01J37/32091 , H01J37/32174 , H01J37/32577 , H01J37/3266 , H01J37/32706 , H01J37/32715 , H01J37/34 , H01J37/3444
摘要： In a plasma enhanced physical vapor deposition of a material onto workpiece, a metal target faces the workpiece across a target-to-workpiece gap less than a diameter of the workpiece. A carrier gas is introduced into the chamber and gas pressure in the chamber is maintained above a threshold pressure at which mean free path is less than 5% of the gap. RF plasma source power from a VHF generator is applied to the target to generate a capacitively coupled plasma at the target, the VHF generator having a frequency exceeding 30 MHz. The plasma is extended across the gap to the workpiece by providing through the workpiece a first VHF ground return path at the frequency of the VHF generator.
摘要翻译：在等离子体中将材料物理气相沉积到工件上时，金属靶在工件间距小于工件直径的工件间距对象。将载气引入室中，并且室中的气体压力保持在平均自由程小于间隙的5％的阈值压力以上。来自VHF发生器的RF等离子体源功率被施加到目标以在目标处产生电容耦合等离子体，VHF发生器具有超过30MHz的频率。通过在VHF发生器的频率处提供穿过工件的第一VHF接地返回路径，等离子体跨越间隙延伸到工件。

27. 发明授权

US09287086B2 System, method and apparatus for controlling ion energy distribution 有权
标题翻译：用于控制离子能量分布的系统，方法和装置
公开(公告)号：US09287086B2
公开(公告)日：2016-03-15
申请号：US12870837
申请日：2010-08-29
申请人： Victor Brouk , Randy Heckman , Daniel J. Hoffman
发明人： Victor Brouk , Randy Heckman , Daniel J. Hoffman
IPC分类号： H01J37/24 , C23C14/34 , C23C16/50 , H01J37/32
CPC分类号： H01J37/24 , C23C14/345 , C23C16/50 , H01J37/32009 , H01J37/32082 , H01J37/32174 , H01J37/32935 , H01J37/3299
摘要： Systems, methods and apparatus for regulating ion energies in a plasma chamber are disclosed. An exemplary method includes placing a substrate in a plasma chamber, forming a plasma in the plasma chamber, controllably switching power to the substrate so as to apply a periodic voltage function to the substrate, and modulating, over multiple cycles of the periodic voltage function, the periodic voltage function responsive to a desired distribution of energies of ions at the surface of the substrate so as to effectuate the desired distribution of ion energies on a time-averaged basis.
摘要翻译：公开了用于调节等离子体室中的离子能量的系统，方法和装置。一种示例性方法包括将衬底放置在等离子体室中，在等离子体室中形成等离子体，可控制地将功率切换到衬底，以便向衬底施加周期性电压功能，并且在周期性电压函数的多个周期内调制，所述周期性电压功能响应于所述衬底表面处的离子能量的期望分布，以便以时间平均的方式实现所需的离子能量分布。

28. 发明授权

US09017533B2 Apparatus for controlling radial distribution of plasma ion density and ion energy at a workpiece surface by multi-frequency RF impedance tuning 有权
标题翻译：用于通过多频RF阻抗调谐来控制工件表面处的等离子体离子密度和离子能量的径向分布的装置
公开(公告)号：US09017533B2
公开(公告)日：2015-04-28
申请号：US12173198
申请日：2008-07-15
申请人： John C. Forster , Daniel J. Hoffman , John A. Pipitone , Xianmin Tang , Rongjun Wang
发明人： John C. Forster , Daniel J. Hoffman , John A. Pipitone , Xianmin Tang , Rongjun Wang
IPC分类号： C23C14/34 , H01J37/32 , H01J37/34
CPC分类号： H01J37/32165 , H01J37/32091 , H01J37/34 , H01J37/3444
摘要： In a physical vapor deposition plasma reactor, a multi-frequency impedance controller is coupled between RF ground and one of (a) the bias electrode, (b) the sputter target, the controller providing adjustable impedances at a first set of frequencies, said first set of frequencies including a first set of frequencies to be blocked and a first set of frequencies to be admitted. The first multi-frequency impedance controller includes a set of band pass filters connected in parallel and tuned to said first set of frequencies to be admitted, and a set of notch filters connected in series and tuned to said first set of frequencies to be blocked.
摘要翻译：在物理气相沉积等离子体反应器中，多频阻抗控制器耦合在RF地与（a）偏置电极之一之间，（b）溅射靶，控制器在第一组频率处提供可调阻抗，所述第一包括要阻止的第一组频率和要被接纳的第一组频率的频率集合。第一多频阻抗控制器包括并联连接并被调谐到要被允许的所述第一组频率的一组带通滤波器，以及串联连接并被调谐到要被阻挡的所述第一组频率的一组陷波滤波器。

29. 发明授权

US08920611B2 Method for controlling radial distribution of plasma ion density and ion energy at a workpiece surface by multi-frequency RF impedance tuning 有权
标题翻译：通过多频RF阻抗调谐来控制工件表面处的等离子体离子密度和离子能量的径向分布的方法
公开(公告)号：US08920611B2
公开(公告)日：2014-12-30
申请号：US12173228
申请日：2008-07-15
申请人： John C. Forster , Daniel J. Hoffman , John A. Pipitone , Xianming Tang , Rongjun Wang
发明人： John C. Forster , Daniel J. Hoffman , John A. Pipitone , Xianming Tang , Rongjun Wang
IPC分类号： C23C14/34 , H01J37/34 , H01J37/32
CPC分类号： H01J37/34 , H01J37/32165 , H01J37/3444
摘要： The method of performing physical vapor deposition on a workpiece includes performing at least one of the following: (a) increasing ion density over a workpiece center while decreasing ion density over a workpiece edge by decreasing impedance to ground at a target source power frequency fs through a bias multi-frequency impedance controller relative to the impedance to ground at the source power frequency fs through the side wall; or (b) decreasing ion density over the workpiece center while increasing ion density over the workpiece edge by increasing the impedance to ground at fs through the bias multi-frequency impedance controller relative to the impedance to ground at fs through the side wall.
摘要翻译：在工件上进行物理气相沉积的方法包括执行以下至少一个：（a）在工件中心上增加离子密度，同时通过减小目标源功率频率fs至一个偏置多频阻抗控制器，相对于通过侧壁的源电源频率fs对地的阻抗; 或（b）通过在fs通过偏压多频阻抗控制器相对于通过侧壁的fs处的接地阻抗增加对fs的接地阻抗来增加工件边缘上的离子密度，从而降低工件中心的离子密度。

30. 发明授权

US08617351B2 Plasma reactor with minimal D.C. coils for cusp, solenoid and mirror fields for plasma uniformity and device damage reduction 有权
标题翻译：等离子体反应器具有最小的直流线圈，用于尖端，螺线管和镜面场，用于等离子体均匀性和器件损坏降低
公开(公告)号：US08617351B2
公开(公告)日：2013-12-31
申请号：US11046656
申请日：2005-01-28
申请人： Daniel J. Hoffman , Roger A. Lindley , Michael C. Kutney , Martin J. Salinas , Hamid F. Tavassoli , Keiji Horioka , Douglas A. Buchberger, Jr.
发明人： Daniel J. Hoffman , Roger A. Lindley , Michael C. Kutney , Martin J. Salinas , Hamid F. Tavassoli , Keiji Horioka , Douglas A. Buchberger, Jr.
IPC分类号： C23F1/00 , H01L21/306 , C03C15/00
CPC分类号： H01J37/32091 , H01J37/3244 , H01J37/32623 , H01J37/3266
摘要： A plasma reactor for processing a workpiece, includes a vacuum chamber defined by a sidewall and ceiling, and a workpiece support pedestal having a workpiece support surface in the chamber and facing the ceiling and including a cathode electrode. An RF power generator is coupled to the cathode electrode. Plasma distribution is controlled by an external annular inner electromagnet in a first plane overlying the workpiece support surface, an external annular outer electromagnet in a second plane overlying the workpiece support surface and having a greater diameter than the inner electromagnet, and an external annular bottom electromagnet in a third plane underlying the workpiece support surface. D.C. current supplies are connected to respective ones of the inner, outer and bottom electromagnets.
摘要翻译：一种用于加工工件的等离子体反应器，包括由侧壁和天花板限定的真空室，以及在所述室中具有工件支撑表面并且面向天花板并且包括阴极电极的工件支撑基座。 RF发生器耦合到阴极电极。等离子体分布由覆盖工件支撑表面的第一平面中的外部环形内部电磁体控制，覆盖工件支撑表面并且具有比内部电磁体更大的直径的第二平面中的外部环形外部电磁体以及外部环形底部电磁体在工件支撑表面下方的第三平面内。内部，外部和底部电磁铁中的相应电源连接到电流源。

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