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21. 发明授权

US06524905B2 Semiconductor device, and thin film capacitor 有权
标题翻译：半导体器件和薄膜电容器
公开(公告)号：US06524905B2
公开(公告)日：2003-02-25
申请号：US09903316
申请日：2001-07-11
申请人： Shintaro Yamamichi , Toru Mori , Akinobu Shibuya , Takao Yamazaki , Yuzo Shimada
发明人： Shintaro Yamamichi , Toru Mori , Akinobu Shibuya , Takao Yamazaki , Yuzo Shimada
IPC分类号： H01L218242
CPC分类号： H01L28/40 , H01L23/5223 , H01L24/05 , H01L27/0688 , H01L2221/68363 , H01L2224/04042 , H01L2224/4847 , H01L2924/14 , H01L2924/30107 , H01L2924/00
摘要： A semiconductor device provided with a thin film capacitor having a small equivalent series inductance is provided, which can be operated at a high frequency range and contributes to size reduction of the electronic devices. The semiconductor device comprises a device formed on a silicon substrate 1a, interlayer insulating films 3a, 3b, and 3c, wiring blocks including a power source wire block and a ground wire block, and a thin film capacitor 14 formed on an uppermost insulating layer. The thin film capacitor 14 comprises a lower electrode 6 connected to the ground wire block 4e through a contact 5d, an upper electrode 8 which is connected to the power source wire block 4d through a contact 5d, and which extends above the lower electrode 6, and a dielectric layer 7 which is inserted between the lower and the upper electrodes.
摘要翻译：提供了具有小等效串联电感的薄膜电容器的半导体器件，其可以在高频范围下操作并且有助于电子器件的尺寸减小。半导体器件包括形成在硅衬底1a，层间绝缘膜3a，3b和3c上的器件，包括电源线块和接地线块的布线块，以及形成在最上层绝缘层上的薄膜电容器14。薄膜电容器14包括通过接触件5d连接到接地线块4e的下电极6，通过接触件5d连接到电源线块4d并且在下电极6上方延伸的上电极8，以及插入在下电极和上电极之间的电介质层7。

22. 发明授权

US06331811B2 Thin-film resistor, wiring substrate, and method for manufacturing the same 有权
标题翻译：薄膜电阻器，布线基板及其制造方法
公开(公告)号：US06331811B2
公开(公告)日：2001-12-18
申请号：US09326878
申请日：1999-06-07
申请人： Akinobu Shibuya , Koji Matsui
发明人： Akinobu Shibuya , Koji Matsui
IPC分类号： H01K1012
CPC分类号： H01C7/006 , H01C3/04 , H01C17/12 , H05K1/167 , H05K3/388 , H05K2201/0317 , H05K2203/0361
摘要： A thin-film resistor that enables a pattern to be simply formed by means of wet etching, that has an excellent resistance temperature characteristic, and that can be easily manufactured, and a method for manufacturing this thin-film resistor, as well as a wiring substrate with this thin-film resistor formed therein. A thin resistor film according to this invention has a structure in which crystal grains deposit in the matrix of amorphous titanium nitride. The thin resistor film is formed on a substrate. The crystal grains includes at least one of crystal titanium nitride and crystal titanium. The thin resistor film can be manufactured using a simple process and can provide a wide range of resistance values with a small tolerance and a temperature coefficient of resistance close to zero.
摘要翻译：一种薄膜电阻器，其能够通过湿法蚀刻简单地形成图案，具有优异的电阻温度特性，并且可以容易地制造，以及制造该薄膜电阻器的方法以及布线基板上形成有该薄膜电阻。根据本发明的薄电阻膜具有其中晶粒沉积在非晶氮化钛基体中的结构。薄电阻膜形成在基板上。晶粒包括晶体氮化钛和晶体钛中的至少一种。可以使用简单的工艺制造薄电阻膜，并且可以提供具有小公差和电阻温度系数接近于零的宽范围的电阻值。

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